B2O3对BMT微波陶瓷结构及介电性能的影响

研究了w(B2O3)=0.5%～3.0%(质量分数)对Ba(Mg1/3Ta2/3)O3(BMT)微波介质陶瓷结构和微波特性的影响。实验结果表明,B2O3掺杂可促进烧结,当w(B2O3)=1%时,BMT陶瓷致密化烧结温度降至1 200℃左右,其表观密度ρ=7.306g/cm3,相对密度达到95.7%,同时,陶瓷体系获得了良好的介电常数εr=22.08,品质因数Q.f=88 000GHz(10GHz),频率温度系数τf=3.3×10-6/℃。     

MnCO3掺杂对BMT陶瓷介电性能的影响

采用传统电子陶瓷工艺合成了MnCO3掺杂的Ba(Mg1/3Ta2/3)O3(BMT)微波介质陶瓷,并研究了MnCO3掺杂量对陶瓷微波介电性能的影响.实验结果发现,添加少量的MnCO3能改善BMT陶瓷的烧结性能,当w(MnCO3)=2%时,陶瓷致密化烧结温度由纯相时的1 650℃以上降至1 350℃,且表观密度提高到7.482 g/cm3以上,烧结体密度可达理论密度的98%,材料的微波性能达到最佳值:介电常数εr=25.09,品质因数与频率之积Q·f=99 000 GHz(8 GHz),谐振频率温度系数τf=0.5×10-6/℃.     

CaWO_4-Li_2WO_4陶瓷低温烧结特性及微波性能研究

采用固相反应法制备了(1-x)CaWO4-xLi2WO4(0≤x≤0.14)微波陶瓷,研究了Li2WO4作为第二相对CaWO4微波陶瓷的低温烧结特性和微波性能的影响。结果表明,Li2WO4相的存在能明显降低CaWO4的烧结温度,并且随着x的增加,(1-x)CaWO4-xLi2WO4(0≤x≤0.14)陶瓷体系的最佳烧结温度降低。当x=0.1,在900℃下烧结2h,该陶瓷材料的介电常数εr=9.002,品质因数与频率之积Q×f=11.76×104 GHz,谐振频率温度系数τf=-55×10-6/℃。在此基础上采用w(CaTiO3)=5.0%调节其谐振频率温度系数到0,调节后的微波介电性能为εr=10.312,Q×f=5.36×104 GHz,τf约为0     

（Bi2O3、ZnO）对（Zr0．8Sn0．2）TiO4介电性能的影响

采用常规固相合成工艺研究了添加剂Bi2O3、ZnO等对(Zr0.8Sn0.2)TiO4的烧结性能、微观结构和微波介电性能的影响.结果表明,陶瓷的烧结温度随着Bi2O3含量的增大而降低,而陶瓷的最大烧结密度随着Bi2O3的增大而增大;当w(Bi2O3)>3%时,其烧结可降低至1175℃;各种材料配方均能烧结出致密的陶瓷.陶瓷的介电常数随着Bi2O3含量的增大而略有增大,但增加幅度较小;而材料的介电损耗则随Bi2O3含量的增大而增加,且增大幅度较大.当w(ZnO)=1%、w(Bi2O3)=3%时,可在1190℃获得致密的陶瓷,在测试频率1 MHz下,介电常数约41,介电损耗为1.5×10-4,其综合微波介电性能最佳.     

添加CuO对Zn_2SiO_4陶瓷微波介电性能的影响

研究了固相添加CuO对Zn1.8SiO3.8陶瓷的烧结温度、微观结构、相结构及微波介电性能的影响。结果表明,CuO的加入有助于降低Zn1.8SiO3.8陶瓷的烧结温度,Zn1.8SiO3.8陶瓷的烧结温度从1 350℃降到1 000℃。其中掺杂w(CuO)=5%(质量分数)的Zn1.8SiO3.8陶瓷,在1 000℃烧结3h可获得结构致密的烧结体,且微波介电性能达到最佳:介电常数εr=6.5,品质因数与频率之积Q·f=39 373GHz,频率温度系数τf=-48×10-6/℃。     

前列腺素E1相关性白细胞减少伴血小板减低1例

研究了B2O3对陶瓷的烧结性能及微波介电特性的影响.研究表明,B2O3的掺入能有效降低Ca[(Li1/3Nb2/3)0.92Zr0.08]O3-δ(CLNZ)陶瓷体系的烧结温度150~200 ℃,谐振频率温度系数τf随B2O3掺入量增加及烧结温度的提高,由负值向正值方向增大.在1 000 ℃,掺入质量分数w(B2O3)=2.5%,陶瓷微波介电性能最佳:介电常数εr=31.3,品质因数与频率之积Qf=13 680 GHz,τf =-8.7 μ℃-1.     

Ca-B-Si掺杂对Ba(Mg_(1/3)Nb_(2/3))O_3陶瓷介电性能的影响

采用传统电子陶瓷工艺合成了Ca-B-Si(CBS)玻璃掺杂的Ba(Mgl/3Nb2/3)O3微波介质陶瓷,研究了CBS掺杂量对陶瓷微波介电性能的影响。结果表明:CBS掺杂可促进陶瓷烧结并提高B位1:2有序度,进而降低微波介质损耗。当w(CBS)=3%时,陶瓷烧结温度由纯相时的1 500℃以上降至1 250℃,表观密度提高到6.32 g/cm3以上,陶瓷的微波介电性能达到最佳值:εr=26,Q.f=67 800 GHz(8 GHz),τf=25×10–6/℃。该陶瓷有望成为用于高频段微波器件的材料。     

Ca[(Li,Nb)Zr]O3+δ微波陶瓷的低温烧结机理研究

研究了ZnO-B2O3-SiO2 (ZBS)玻璃添加对Ca[(Li1/3Nb2/3)0.95Zr0.15]O3+δ(CLNZ)陶瓷相转变、晶体结构及微波介电性能的影响.XRD及SEM显示,ZBS玻璃添加可使CLNZ钙钛矿陶瓷在940℃获得单相致密的结构,但当ZBS玻璃的质量分数超过10％后,陶瓷中开始出现Ca2Nb2O7型烧绿石相.在烧结过程中ZBS玻璃相富集在晶界处,表明烧结过程中它起到液相烧结助剂的作用,可有效地将CLNZ陶瓷的烧结温度从1170℃降低到940℃.且在ZBS玻璃相的诱导下,CLNZ陶瓷晶体发生了从(121)面到(101)面的择优取向转变.在最佳烧结条件940℃、4h下,在w(ZBS)=15％玻璃掺杂的CLNZ陶瓷中,其微波介电性能为介电常数εr=32.0,品质因数与频率之积Q·f=6 640 GHz,频率温度系数τf=27.1 μ℃-1,且该陶瓷体系不与Ag发生化学反应,可广泛应用于低温共烧陶瓷( LTCC)领域.     

BBC掺杂BSNN-BSZT陶瓷低温烧结性能的研究

采用传统的两步固相反应法制备了一种低温烧结的CuBBiO_4-(Ba_(0.8)Sr_(0.2))(Ni_(1/3)Nb_(2/3))-(Ba_(0.8)Sr_(0.2))(Zr_(0.5)Ti_(0.5))(BBC-BSNN-BSZT)压电陶瓷,并研究了CuBBiO_4(BBC)掺杂量对陶瓷微观形貌、相结构、介电、压电性能和烧结温度的影响。研究结果表明,制备的陶瓷样品为单一的钙钛矿相,未发现其他杂相;掺杂的BBC低熔点化合物在烧结中提供适量液相,促进烧结,样品可在925℃烧结致密。该压电陶瓷材料的居里温度由158℃提升到230℃;当掺杂w(BBC)=0.75%(质量分数)时,陶瓷达到最佳压电性能:压电常数d_(33)=613pC/N,机电耦合系数k_p=0.7,介电常数ε_r=3 926,介电损耗tanδ=0.005 2,品质因数Q_m=70。居里温度T_C=227℃。     

ZrO2掺杂对Ba(Zn1/3Ta2/3)O3陶瓷介电性能的影响

采用固相反应烧结法制备了ZrO2掺杂的Ba(Zn1/3Ta2/3)O3微波介质陶瓷,研究了陶瓷的烧结特性和介电性能。结果表明,ZrO2掺杂能有效降低Ba(Zn1/3Ta2/3)O3陶瓷的烧结温度,改善陶瓷的微波介电性能。当x(ZrO2)=4%时,Ba(Zn1/3Ta2/3)O3陶瓷致密化烧结温度由纯相时的1 600℃降至1 300℃,同时陶瓷材料的微波介电性能达到最佳值,即介电常数εr=34.79,品质因数与频率的乘积Q×f=148 000(8GHz),谐振频率温度系数τf=0.3×10-6/℃。     

Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Characteristics of BaZrO₃ (BZO) modified Sr_0.8Bi_2.2Ta₂O₉ (SBT) thin films fabricated by sol-gel method on HfO₂ coated Si substrates have been investigated in a metal-ferroelectric-insulator-semiconductor (MFIS) structure for potential use in a ferroelectric field effect transistor (FeFET) type memory. MFIS structures consisting of pure SBT and doped with 5 and 7 mol% BZO exhibited memory windows of 0.81, 0.82 and 0.95 V with gate voltage sweeps between −5 and +5 V, respectively. Leakage current density levels of 10⁻⁸ A/cm² for BZO doped SBT gate materials were observed and attributed to the metallic Bi on the surface as well as intrinsic defects and a porous film microstructure. The higher than expected leakage current is attributed to electron trapping/de-trapping, which reduces the data retention time and memory window. Further process improvements are expected to enhance the electronic properties of doped SBT for FeFET.     

Some new FIR laser lines of optically pumped12CH316OH,12CH316OD, and12CH3I,12CH3Br,12CD2Cl2absorption spectroscopy of water and acetonitrile

The wavelength, polarization, and output power of several lines of the optically pumped CW FIR¹²CH3¹⁶OH (methanol) and¹²CH3¹⁶OD (1-D deuterated methanol), methyl iodide, methyl bromide, and deuterated methylene chloride lasers have been determined. In addition to lines already reported in the literature, seven strong lines have been observed. Optimum performance of the laser system is achieved by means of an improved coupling of the CO2pump power into the resonator and extraction of the FIR power from the resonator. Measurements on the power absorption coefficient of water using the laser indicate thatalpha(bar{nu})rises to almost 1100 Np ċ cm^-1at 170 cm^-1, and then shows a gradual fall with an increase in frequency. A strong temperature dependence of the 200 cm^-1peak inalpha(bar{nu})is predicted, with a decrease in the frequency of maximum power absorption coefficient with an increase in temperature. The range of measurements for acetonitrile is extended to lower frequencies so as to overlap with those determined from other millimeter wave techniques. For highly power-absorbing liquids,alpha(bar{nu})is estimated to be within ± 5 percent.     

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistors

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As n-p-n abrupt double-heterojunction bipolar transistors grown by molecular beam epitaxy (MBE) have been realized for the first time. DC current gains in excess of 300 have been measured on devices operated in the emitter-up configuration. DC current gains around 50 are obtained on device structures with Be+ implanted extrinsic base regions operated in the emitter-down configuration. The carrier injection and collection behavior of the abrupt InGaAs/InAlAs heterojunctions is discussed.     

Beat-frequency between measurements between C12O216and C12O218lasers

Several beat frequencies in the range below 6 GHz have been measured using a C¹²O2¹⁶laser and a C¹²O2¹⁸laser operating on several pairs of closely spaced lines in the 9.3-μm region.     

（Li,Nb）掺杂SnO2压敏材料的电学非线性研究

研究了掺锂对SnO2压敏电阻器性能的影响.研究发现Li+对Sn4+的取代能明显提高陶瓷的烧结速度和致密度,且能大幅度改善材料的电学非线性性能.掺入x(Li2CO3)为1.0%的陶瓷样品具有最高的密度(P=6.77g/cm3)、最高的介电常数(ε=1851)、最低的视在势垒电场(EB=68.86V/mm)和最高的非线性常数(α=9.9).对比发现,Na+由于具有较大的离子粒半径,其掺杂改性性能相对较差.提出了SnO2@Li2CO3@Nb2O5晶界缺陷势垒模型.     

Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO₂ on the TiO₂-V₂O₅-Y₂O₃ varistor ceramics. The result shows that as the doping contents of V₂O₅ and Y₂O₃ are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO₂ makes the highest α value (α = 12.8), the lowest breakdown voltage V_1mA (V_1mA = 15.8 V/mm) and the highest grain boundary barrier Φ_B (Φ_B = 1.48 eV), which is remarkably superior to the TiO₂-V₂O₅-Y₂O₃ varistor ceramics undoped with Ge and GeO₂ and mono-doped with Ge or GeO₂. The TiO₂-V₂O₅-Y₂O₃-Ge-GeO₂ ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.     

Temporal stability of circulating current in thin film Tl2Ba2CaCu2O8 and YBa2Cu3O7

The temporal stability of trapped transport current in annular thin film Tl₂Ba₂CaCu₂O₈ (TBCCO) and YBa₂Cu₃O₇ (YBCO) wafers has been accurately measured and has been found to be of suitable quality for the stringent requirements of nuclear magnetic resonance (NMR) magnets. No detectable decay, to the limit of the experimental apparatus (2*10^-14 Ω), was detected in those wafers with transport current at or below the critical current density J_c. The critical current density, as previously determined from 12 μm meander lines, was confirmed in a wafer with a width of 1.9 cm. The profile of trapped magnetic field resulting from induced current was modeled in order to assess its effect on the uniformity of an NMR magnet     

Ho3+/Yb3+共掺的SiO2-Al2O3-BaO-BaF2微晶玻璃上转换发光研究

制备了Ho3+/Yb3+共掺的氧氟硅酸盐玻璃, 根据玻璃样品的差热分析进行微晶化处理, 测试了Ho3+/Yb3+共掺微晶玻璃的X射线衍射(XRD)图谱、吸收光谱和上转换发光光谱。结果发现, 在980 nm LD激发下, Ho3+/Yb3+共掺的含BaF2纳米晶的氧氟硅酸盐微晶玻璃可以同时观察到绿光(544 nm)和红光(656, 748 nm)上转换发光, 分别对应于Ho3+ 离子的5F4/5S2→5I8, 5F5→5I8和5F4/5S2→5I7能级跃迁, 与未热处理的玻璃样品相比, 微晶玻璃样品的绿光发光强度增强约347倍。研究结果表明含BaF2纳米晶的氧氟硅酸盐微晶玻璃是一种潜在的上转换基质材料。     

Laser4F3/2→4I9/2and4F3/2→4I13/2transitions in KY(WO4)2:Nd3+

We report the observation of lasing at 0.9137 μm and 1.3545 μm in neodymium-doped KY(WO4)2at 77 K. Transition cross sections, fluorescent line width, and branching ratios are given.     

Initiation of NF3-H2chemical reactions via CO2laser irradiation of NF4BF4

NF4BF4has been irradiated with a low-power CO2laser to produce reactive species which then initiate reactions in an ambient NF3-H2mixture. The laser-induced decomposition of NF4BF4in vacuum was measured as a function of laser power and energy. The laser-induced decomposition threshold was determined to be 40 mJ, which corresponds to a laser fluence of 20 J/cm². This same value was determined for the initiation threshold of NF3-H2reactions via CO2laser irradiation of NF4BF4. Visible and infrared emissions were observed from initiated NF3-H2mixtures. This radiative technique has attractive features for initiating reactions in solid-gas systems.