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1.
本文从HSDPA的引入策略入手,详细分析了HSDPA的技术特点,并重点分层讨论了HSDPA的引入对R99网络结构产生的影响.  相似文献   

2.
HSDPA是3GPP在R5协议中引入的一种能够提高下行容量和数据业务速率的增强技术.本文介绍了HSDPA技术的基本原理、性能和应用情况,对HSDPA所采用的关键技术进行了详细分析.最后,对HSDPA的引入策略提出了一些建议.  相似文献   

3.
本文结合HSDPA覆盖策略,阐明在引入HSDPA后对原R99覆盖规划的影响.  相似文献   

4.
HSDPA的引入将进一步增强TD-SCDMA网络下行数据传输速率.本文分析了TD-SCDMA网络中HSDPA技术特点并比较了与WCDMA HSDPA技术的异同,同时结合产业成熟程度以及3G数据业务的发展状况给出TD-SCDMA网络中HSDPA引入后的组网策略建议.  相似文献   

5.
张巍 《移动通信》2009,33(8):75-78
文章对TD—HSDPA技术的物理层进行了简单分析,从公共信道和链路预算两个角度对HSDPA引入后网络覆盖所产生的影响进行了初步探讨,阐述了TD—HSDPA组网方式和室内覆盖策略,最后指出了引入HSDPA后传输网络在资源配置方面受到的影响。  相似文献   

6.
张航东 《移动通信》2011,35(3):117-120
文章结合实际测试,分析了在现有室内覆盖基础上引入HSDPA后对原来R99业务的覆盖和容量方面可能产生的影响,给出了引入HSDPA后室内分布的组网策略。  相似文献   

7.
HSDPA是WCDMA 3GPP Release-5规范中引入的新技术,无线资源管理策略是影响HSDPA性能的主要因素之一.介绍了HSDPA系统中无线资源管理的功率和码资源分配,调度算法,切换过程等,主要比较了HSDPA与3GPP Release-99规范的无线资源管理策略的不同.  相似文献   

8.
文章从HSDPA技术发展现状入手,结合国内数据业务发展现状和需求,通过对HSDPA业务混合载波下室内覆盖测试、室外仿真的分析,介绍了不同时期WCDMA系统引入HSDPA业务时网络规划的策略和方法。  相似文献   

9.
HSDPA引入了一种全新的信道类型(高速下行链路共享信道),这种信道能够有效利用无线频率资源,并充分考虑到猝发分组数据的传输需求.本文分析了HSDPA 3个演进阶段(基本HSDPA阶段、增强HSDPA阶段与HSDPA进一步演进阶段)的关键技术,并对HSDPA的使用过程进行了研究.  相似文献   

10.
文章结合实际测试,分析了在现有室内覆盖基础上引入HSDPA后对原来R99业务的覆盖和容量方面可能产生的影响,给出了引入HSDPA后室内分布的组网策略。  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.  相似文献   

13.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.  相似文献   

14.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

15.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

16.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

17.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

18.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

19.
This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.  相似文献   

20.
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.  相似文献   

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