基于CC1010芯片的微型无线数据收发模块的设计

本文介绍了基于SmartRF CC1010芯片的微型无线数据收发模块的设计，给出了采用CC1010芯片设计微型无线数据收发模块的设计方案，并提出了在板制作过程中应注意的问题。     

高性能RF收发器CC900

CC900是美国Chipcon Component公司生产的一种高性能RF收发芯片，除在同一芯片内可完成RF信号的接收和发射外，其载波频率、输出发射功率等还可编程实现，并具有跳频扩频功能，因此，使用CC900可提高系统通讯的保密性。文中介绍了CC900芯片的特点、工作原理和接口时序，并给出了CC900在水表无线抄表系统中的具体应用电路。     

基于全集成收发芯片CC1000的无线数据传输设计

CC1000是CHIPCON公司生产的一种低功耗全集成收发芯片,工作于315/433/868/915 MHz工业、科学和医疗(ISM)短距离设备频段.文中介绍了芯片功能,给出了基于RS-232接口的PC机之间无线数据传输电路和PC机端接口程序、单片机控制端控制程序,实现两PC机之间的无线数据传输.系统结构简单,具有节能模式,对短距离无线数据通信提供了一种实例.     

可编程RF收发器芯片CC1000的原理及应用

CC1000是Chipcon公司新推出的单片可编程RF收发芯片，该芯片集成了射频发射，射频接收，PLL合成，FSK调制／解调，可编程控制等多种功能，其频率范围为300MHz-1000MHz,灵敏度为－109dBm,可编程输出功率为－20－10dBm，数据速率可达19.2kBaud。文中给出了CC1000的结构，原理，特性及应用电路。     

Chipcon推出1GHz以下RF收发器芯片

飞思Chipron公司推出两款基于SmartRF14技术平台的1GHz以下RF芯片CC1100和CC1150。其中CC1100是一款多通道RF收发器，而CC1150则是多通道RF发射器，工作在315、433、868和915MHz免许可证ISM频段，为多信道单向和双向RF链路提供了低价格整体系统解决方案。CC1100和CC1150采用了与Chipcon去年12月发布的2．4GHz CC2500Rf收发器和CC2550Rf发射器类似的技术。     

德州仪器内嵌8051的FSK收发器CC1010

CC1010是基于Chipcon's Smart RF技术、内嵌8051单片机且带有32KBFlash程序存储器的单片可编程UHF收发器芯片,采用了TQFP-64封装,能工作在300～1kHz.它仅需要少数几个外接元件,因而外围电路连接十分简单,特别适合计算机遥测遥控、安防、家庭自动化、汽车仪表数据读取等无线数据发射/接收系统中使用.     

三线射频收发芯片与模块

无线射频收发芯片与模块主要用于传输数据，广泛用于遥控、遥测、无线抄表、防盗报警、工业控制、智能小区管理、安全防范、无线网络等场合。     

单片无线收发一体芯片RF401及其应用

ＲＦ４０１是最新推出的单片无线收发芯片，该芯片集成了高频发射，高频接收，ＰＬＬ合成，ＦＳＫ调制，ＦＳＫ解调，多频道切换等功能，具有性能优异外围元件少，功耗低，使用方便等特点，可广泛应用于无线数据传输系统的产品设计中。     

433／868／915MHz收发芯片nRF903

特点nRF903是NORDIC公司最新推出的单片无线收发一体的芯片,采用了Bluetooth核心技术设计,在一个32脚的芯片中包括了三段高频发射、高频接收、PLL合成、I/Q调制、I/Q解调、多频道切换、异步通信接口等,是目前集成度最高的无线数据传输产品之一。以往设计无线数据传输产品往往需要相当的无线专业知识和价格高昂的专业设备,传统的电路方案不是电路繁琐就是调试困难,令人望而却步,影响了用户的使用和新产品的开发。线产品设计的困难,它采用抗干扰能力强的GMSK调制方式,工作频率稳定可靠,外围元件少,便于设计生产,功耗极低,…     

基于TinyOS的CC2430无线数据收发的设计

为解决现有CC2430无线数据收发程序代码量庞大,结构不清晰,关键源码不公开等问题,提出一种基于TinyOS的CC2430无线数据收发设计方案。在分析CC2430性能的基础上,设计一种基于DMA的节点收发机制,配置DMA的源和目的地址寄存器、数据长度寄存器以及触发模式寄存器,并根据DMA操作流程给出数据发送和接收流程图。基于TinyOS的组件结构,给出了包括DMA数据收发、简单MAC协议、定时器和串口的组件配置文件。编译结果表明该方法结构简单,占用RAM为11字节,占用程序空间少于7KB。在CC2430节点上的运行结果表明在节点通信范围内．在各种网络负载下节点间数据收发成功率和正确率均达到100％。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.