Novel ammonia-sensing phenomena in sol–gel derived Ba0.5Sr0.5TiO3 thin films

In this paper, ammonia-sensing behavior of barium strontium titanate (BST) thin films have been reported for the first time. Thin films of BST deposited by sol–gel spin coating technique have been found to show an increase in resistance when exposed to ammonia gas. The sensitivity variation was from 20 to 60%, with lowest detection limit of about 160 ppm. The films were prepared with different pre-sintering temperatures and thickness and effect of these parameters on the ammonia-sensing have been studied. The optimum temperature for operation was found to be close to 270 °C. The ammonia-sensing studies were also performed for other gases like ethanol, NO₂ and CO; but the sensitivity in these cases was negligibly smaller than that in case of ammonia.     

Manufacture and characterization of sol–gel V1−x−yWxSiyO2 films for uncooled thermal detectors

V_1−x−yW_xSi_yO₂ films for uncooled thermal detectors were coated on sodium-free glass slides with sol–gel process, followed by the calcination under a reducing atmosphere (Ar/H₂ 5%). The V_1−x−yW_xSi_yO₂ films as prepared inherit various phase transition temperatures ranging from 20 to 70 °C depending on the dopant concentrations and the fabrication conditions. Compared to the hysteresis loop of plain VO₂ films, a rather steep loop was obtained with the addition of tungsten components, while a relaxed hysteresis loop with the tight bandwidth was contributed by Si dopants. Furthermore, the films with switching temperature close to room temperature were fabricated to one-element bolometers to characterize their figures of merit. Results showed that the V_0.905W_0.02Si_0.075O₂ film presented a satisfactory responsivity of 2600 V/W and detectivity of 9 × 10⁶ cm  Hz^1/2/W with chopper frequencies ranging from 30 to 60 Hz at room temperature. It was proposed that with appropriate amount of silicon and tungsten dopants mixed in the VO₂, the film would characterize both a relaxed hysteresis loop and a fair TCR value, which effectively reduced the magnitude of noise equivalent power without compromising its performance in detectivity and responsivity.     

Nanoparticle engineering for gas sensor optimisation: improved sol–gel fabricated nanocrystalline SnO2 thick film gas sensor for NO2 detection by calcination, catalytic metal introduction and grinding treatments

The control of the technological steps such as calcination temperature and introduction of catalytic additives are accepted to be key points in the obtaining of improved sol–gel fabricated SnO₂ thick film gas sensors with different sensitivity to NO₂ and CO. In this work, after proving that the undoped material calcined at 1000°C is optimum for NO₂ detection, grinding is added as third technological step for further modification of particle surface characteristics, allowing to reduce cross-sensitivity to CO. The influence of grinding on the base resistance and on the sensor signals to NO₂ and CO is discussed in detail as a function of the structural differences of the sensing material.     

A comparative study of the physical properties of CdS, Bi2S3 and composite CdS–Bi2S3 thin films for photosensor application

Thin films of CdS, Bi₂S₃ and composite CdS–Bi₂S₃ have been deposited using modified chemical bath deposition (M-CBD) technique. The various preparative parameters were optimized to obtain good quality thin films. The as-deposited films of CdS, Bi₂S₃ and composite were annealed in Ar gas at 573 K for 1 h. A comparative study was made for as-deposited and annealed CdS, Bi₂S₃ and composite thin films. Annealing showed no change in crystal structure of these as-deposited films. However, an enhancement in grain size was observed by AFM studies. In addition change in band gap with annealing was seen. A study of spectral response, photosensitivity showed that the films can be used as a photosensor.     

Microstructural and electrical properties of 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) epitaxial films grown on Si substrates

Epitaxially grown PMN-PT thin films using the PMN-PT single crystal targets were prepared at 550 °C on appropriate buffer layers of LSCO/CeO₂/YSZ deposited on a Si substrate using pulsed laser deposition. The micro-structural and the electrical properties of the films were investigated as a function of the film thickness. The PMN-PT films with the thickness from 200 to 600 nm exhibited an epitaxial nature with a pure perovskite structure. On the other hand, the films above 700 nm included a pyrochlore phase embedded in the perovskite structure although they exhibited an epitaxial nature. A pyrochlore phase included in the films above 700 nm thickness decreased the dielectric constant and the ferroelectric properties of the PMN-PT films.