Elucidating the Coordination of Diethyl Sulfide Molecules in Copper(I) Thiocyanate (CuSCN) Thin Films and Improving Hole Transport by Antisolvent Treatment

Copper(I) thiocyanate (CuSCN) is rising to prominence as a hole‐transporting semiconductor in various opto/electronic applications. Its unique combination of good hole mobility, high optical transparency, and solution‐processability renders it a promising hole‐transport layer for solar cells and p‐type channel in thin‐film transistors. CuSCN is typically deposited from sulfide‐based solutions with diethyl sulfide (DES) being the most widely used. However, little is known regarding the effects of DES on CuSCN films despite the fact that DES can coordinate with Cu(I) and result in a different coordination polymer having a distinct crystal structure when fully coordinated. Herein, the coordination of DES in CuSCN films is thoroughly investigated with a suite of characterization techniques as well as density functional theory. This study reveals that DES directly affects the microstructure of CuSCN by stabilizing the polar crystalline surfaces via the formation of strong coordination bonds. Furthermore, a simple antisolvent treatment is demonstrated to be effective at modifying the microstructure and morphology of CuSCN films. The treatment with tetrahydrofuran or acetone leads to uniform films consisting of CuSCN crystallites with high crystallinity and their surfaces passivated by DES molecules, resulting in an increase in the hole mobility from 0.01 to 0.05 cm² V^?1 s^?1.     

Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin‐Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

This study reports the development of copper(I) thiocyanate (CuSCN) hole‐transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n‐alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin‐cast in air and annealed at 100 °C. X‐ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high‐resolution valence band spectra agree with first‐principles calculations. Study of the hole‐transport properties using field‐effect transistor measurements reveals that the aqueous‐processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm² V^?1 s^?1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous‐processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous‐processed CuSCN‐based cells consistently outperform devices based on poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous‐based synthetic route that is compatible with high‐throughput manufacturing and paves the way for further developments.     

Highly Stable and Efficient Perovskite Solar Cells with 22.0% Efficiency Based on Inorganic–Organic Dopant‐Free Double Hole Transporting Layers

Most of the high performance in perovskite solar cells (PSCs) have only been achieved with two organic hole transporting materials: 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9‐spirobifluorene (Spiro‐OMeTAD) and poly(triarylamine) (PTAA), but their high cost and low stability caused by the hygroscopic dopant greatly hinder the commercialization of PSCs. One effective alternative to address this problem is to utilize inexpensive inorganic hole transporting layer (i‐HTL), but obtaining high efficiency via i‐HTLs has remained a challenge. Herein, a well‐designed inorganic–organic double HTL is constructed by introducing an ultrathin polymer layer dithiophene‐benzene (DTB) between CuSCN and Au contact. This strategy not only enhances the hole extraction efficiency through the formation of cascaded energy levels, but also prevents the degradation of CuSCN caused by the reaction between CuSCN and Au electrode. Furthermore, the CuSCN layer also promotes the formation of a pinhole‐free and compact DTB over layer in the CuSCN/DTB structure. Consequently, the PSCs fabricated with this CuSCN/DTB layer achieves the power conversion efficiency of 22.0% (certified: 21.7%), which is among the top efficiencies for PSCs based on dopant‐free HTLs. Moreover, the fabricated PSCs exhibit high light stability under more than 1000 h of light illumination and excellent environmental stability at high temperature (85 °C) or high relative humidity (>60% RH).     

Drift mobility of carriers in porous silicon

The drift mobility of carriers in porous silicon has been studied in a wide temperature range (190–360 K) at electric field strengths of 2×10³–3×10⁴ V/cm. An exponential temperature dependence of the hole drift mobility with an activation energy of d ～ 0.14 eV was established. The density of localized states controlling the transport is evaluated.     

p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells

The ability to tune the electronic properties of soluble wide bandgap semiconductors is crucial for their successful implementation as carrier‐selective interlayers in large area opto/electronics. Herein the simple, economical, and effective p‐doping of one of the most promising transparent semiconductors, copper(I) thiocyanate (CuSCN), using C₆₀F₄₈ is reported. Theoretical calculations combined with experimental measurements are used to elucidate the electronic band structure and density of states of the constituent materials and their blends. Obtained results reveal that although the bandgap (3.85 eV) and valence band maximum (?5.4 eV) of CuSCN remain unaffected, its Fermi energy shifts toward the valence band edge upon C₆₀F₄₈ addition—an observation consistent with p‐type doping. Transistor measurements confirm the p‐doping effect while revealing a tenfold increase in the channel's hole mobility (up to 0.18 cm² V^?1 s^?1), accompanied by a dramatic improvement in the transistor's bias‐stress stability. Application of CuSCN:C₆₀F₄₈ as the hole‐transport layer (HTL) in organic photovoltaics yields devices with higher power conversion efficiency, improved fill factor, higher shunt resistance, and lower series resistance and dark current, as compared to control devices based on pristine CuSCN or commercially available HTLs.     

High Electron Mobility and Ambipolar Charge Transport in Binary Blends of Donor and Acceptor Conjugated Polymers

High electron mobility and ambipolar charge transport are observed in phase‐separated binary blends of n‐type poly(benzobisimidazobenzophenanthroline) (BBL) with p‐type polymer semiconductors, poly[(thiophene‐2,5‐diyl)‐alt‐(2,3‐diheptylquinoxaline‐5,8‐diyl)] (PTHQx) and poly(10‐hexylphenoxazine‐3,7‐diyl‐alt‐3‐hexyl‐2,5‐thiophene) (POT). Atomic force microscopy (AFM) and transmission electron microscopy (TEM) show phase‐separated domains of 50–300 nm in the binary blend thin films. The TEM images and electron diffraction of BBL/PTHQx blends show the growth of single‐crystalline phases of PTHQx within the BBL matrix. A relatively high electron mobility (1.0 × 10^–3 cm² V^–1 s^–1) that is constant over a wide blend‐composition range is observed in the PTHQx blend field‐effect transistors (FETs). Ambipolar charge transport is observed in both blend systems at a very high concentration of the p‐type semiconductor (≥90 wt % PTHQx or ≥80 wt % POT). Ambipolar charge transport is exemplified by an electron mobility of 1.4 × 10^–5 cm² V^–1 s^–1 and a hole mobility of 1.0 × 10^–4 cm² V^–1 s^–1 observed in the 98 wt % PTHQx blend FETs. These results show that ambipolar charge transport and the associated carrier mobilities in blends of conjugated polymer semiconductors have a complex dependence on the blend composition and the phase‐separated morphology.     

High Hole Mobility in Long‐Range Ordered 2D Lead Sulfide Nanocrystal Monolayer Films

Coupling between colloidal semiconductor nanocrystals (NCs) with long‐range order is critical for designing advanced nanostructures with controlled energy flow and charge carrier transport. Herein, under the premise of keeping long‐range order in 2D NC monolayer, its native organic ligands are exchanged with halogen ions in situ at the liquid–air interface to enhance the coupling between NCs. Further treatments on the films with dimethyl sulfoxide, methanol, or their mixture effectively improve carrier mobility of the devices. The devices show repeatable enhanced p‐type transport behavior with hole mobility of up to 0.224 ± 0.069 cm² V^?1 s^?1, the highest value reported for lead sulfide NC solids without annealing treatment. Thanks to accurate control over the surface of NCs as well as the structure of NC film, the ordered NC monolayer film of high hole mobility suggests great potentials for making reliable high performance devices.     

Interface Engineering for Solid‐State Dye‐Sensitized Nanocrystalline Solar Cells: The Use of Ion‐Solvating Hole‐Transporting Polymers

The control of interfacial charge transfer is central to the design of photovoltaic devices. This charge transfer is strongly dependent upon the local chemical environment at each interface. In this paper we report a methodology for the fabrication of a novel nanostructured multicomponent film, employing a dual‐function supramolecular organic semiconductor to allow molecular‐level control of the local chemical composition at a nanostructured inorganic/organic semiconductor heterojunction. The multicomponent film comprises a lithium ion doped dual‐functional hole‐transporting material (Li⁺–DFHTM), sandwiched between a dye‐sensitized nanocrystalline TiO₂ film and a mono‐functional organic hole‐transporting material (MFHTM). The DFHTM consists of a conjugated organic semiconductor with ion supporting side chains, designed to allow both electronic and ionic charge transport properties. The Li⁺–DFHTM layers provide a new and versatile way to control the interface electrostatics, and consequently the charge transfer, at a nanostructured dye‐sensitized inorganic/organic semiconductor heterojunction.     

Hole mobilities in sol–gel materials

New silylated precursors with hole transporting units are prepared by modification of different active molecules (carbazole, oxadiazole and tetraphenylphenylenediamine derivatives) using sol‐gel precursors. Absorption and photoluminescence spectra show that the electronic structures are not significantly modified by the functionalization. Field dependence of the hole mobility of the different sol‐gel layers is measured using the time‐of‐flight technique. The highest hole mobility is observed for the layer having tetraphenylphenylenediamine units: 5.7 × 10^—5 cm².V^—1.s^—1 at a field strength of E = 5 × 10⁵ V.cm^—1. For the best carbazole compound, the mobility is found to be about twentyfold lower at the same field. Further experiments are required to test these new materials as hole transporting layers in photorefractive and electroluminescent devices. Copyright © 2000 John Wiley & Sons, Ltd.     

The Mobility and Decay Kinetics of Charge Carriers in Discotic Hexabenzocoronenes

The temperature dependence of the mobility and decay kinetics of charge carriers in discotic hexa‐peri‐hexabonzocoronene derivatives has been measured using the pulse‐radiolysis time‐resolved microwave conductivity technique (PR‐TRMC). For both the racemic and chiral dimethyloctyl, and the isomeric n‐decyl substituted derivatives, the mobility decreases at the crystalline solid (K)–liquid crystalline (Col) transition from 0.5±0.1 to 0.30±0.05 cm² V^–1 s^–1 with the transition temperature ca. 30 °C lower for the branched chain compounds. The charge recombination kinetics are similar for the branched chain isomers in the Col phase but a faster decay is found for the racemic compound in the K phase. The fact that the mobility values for an asymmetrically substituted butylanthraquinone (C4 AQ) derivative are a factor of 2–3 lower than for the fully hexakis‐alkyl substituted compounds is attributed to the similar intracore mobilities for holes and electrons in the latter materials and the electron localization on the AQ moiety in the former. Charge recombination is found to be orders of magnitude faster in the Col phase of the C4 AQ derivative than in the K phase, this is attributed to the motional freedom of the AQ^– group in the liquid‐crystalline phase.     

Charge Transport and Photocurrent Generation in Poly(3‐hexylthiophene): Methanofullerene Bulk‐Heterojunction Solar Cells

The effect of controlled thermal annealing on charge transport and photogeneration in bulk‐heterojunction solar cells made from blend films of regioregular poly(3‐hexylthiophene) (P3HT) and methanofullerene (PCBM) has been studied. With respect to the charge transport, it is demonstrated that the electron mobility dominates the transport of the cell, varying from 10^–8 m² V^–1 s^–1 in as‐cast devices to ≈3 × 10^–7 m² V^–1 s^–1 after thermal annealing. The hole mobility in the P3HT phase of the blend is dramatically affected by thermal annealing. It increases by more than three orders of magnitude, to reach a value of up to ≈ 2 × 10^–8 m² V^–1 s^–1 after the annealing process, as a result of an improved crystallinity of the film. Moreover, upon annealing the absorption spectrum of P3HT:PCBM blends undergo a strong red‐shift, improving the spectral overlap with solar emission, which results in an increase of more than 60 % in the rate of charge‐carrier generation. Subsequently, the experimental electron and hole mobilities are used to study the photocurrent generation in P3HT:PCBM devices as a function of annealing temperature. The results indicate that the most important factor leading to a strong enhancement of the efficiency, compared with non‐annealed devices, is the increase of the hole mobility in the P3HT phase of the blend. Furthermore, numerical simulations indicate that under short‐circuit conditions the dissociation efficiency of bound electron–hole pairs at the donor/acceptor interface is close to 90 %, which explains the large quantum efficiencies measured in P3HT:PCBM blends.     

Ambipolar Charge Transport in Films of Methanofullerene and Poly(phenylenevinylene)/Methanofullerene Blends

Herein, we report experimental studies of electron and hole transport in thin films of [6,6]‐phenyl C61 butyric acid methyl ester (PCBM) and in blends of poly[2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐1,4‐phenylenevinylene] (MDMO‐PPV) with PCBM. The low‐field hole mobility in pristine MDMO‐PPV is of the order of 10^–7 cm² V^–1 s^–1, in agreement with previous studies, whereas the electron mobility in pristine PCBM was found by current‐density–voltage (J–V) measurements to be of the order of 10^–2 cm² V^–1 s^–1, which is about one order of magnitude greater than previously reported. Adding PCBM to the blend increases both electron and hole mobilities, compared to the pristine polymer, and results in less dispersive hole transport. The hole mobility in a blend containing 67 wt.‐% PCBM is at least two orders of magnitude greater than in the pristine polymer. This result is independent of measurement technique and film thickness, indicating a true bulk property of the material. We therefore propose that PCBM may assist hole transport in the blend, either by participating in hole transport or by changing the polymer‐chain packing to enhance hole mobility. Time‐of‐flight mobility measurements of PCBM dispersed in a polystyrene matrix yield electron and hole mobilities of similar magnitude and relatively non‐dispersive transport. To the best of our knowledge, this is the first report of hole transport in a methanofullerene. We discuss the conditions under which hole transport in the fullerene phase of a polymer/fullerene blend may be expected. The relevance to photovoltaic device function is also discussed.     

High‐Mobility Naphthalene Diimide and Selenophene‐Vinylene‐Selenophene‐Based Conjugated Polymer: n‐Channel Organic Field‐Effect Transistors and Structure–Property Relationship

Interdependence of chemical structure, thin‐film morphology, and transport properties is a key, yet often elusive aspect characterizing the design and development of high‐mobility, solution‐processed polymers for large‐area and flexible electronics applications. There is a specific need to achieve >1 cm² V^?1 s^?1 field‐effect mobilities (μ) at low processing temperatures in combination with environmental stability, especially in the case of electron‐transporting polymers, which are still lagging behind hole transporting materials. Here, the synthesis of a naphthalene‐diimide based donor–acceptor copolymer characterized by a selenophene vinylene selenophene donor moiety is reported. Optimized field‐effect transistors show maximum μ of 2.4 cm² V^?1 s^?1 and promising ambient stability. A very marked film structural evolution is revealed with increasing annealing temperature, with evidence of a remarkable 3D crystallinity above 180 °C. Conversely, transport properties are found to be substantially optimized at 150 °C, with limited gain at higher temperature. This discrepancy is rationalized by the presence of a surface‐segregated prevalently edge‐on packed polymer phase, dominating the device accumulated channel. This study therefore serves the purpose of presenting a promising, high‐electron‐mobility copolymer that is processable at relatively low temperatures, and of clearly highlighting the necessity of specifically investigating channel morphology in assessing the structure–property nexus in semiconducting polymer thin films.     

Hole Transport in Poly(phenylene vinylene)/Methanofullerene Bulk‐Heterojunction Solar Cells

A fundamental limitation of the photocurrent of solar cells based on a blend of poly(2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐p‐phenylene vinylene) (MDMO‐PPV) and [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PCBM) is caused by the mobility of the slowest charge‐carrier species, the holes in the MDMO‐PPV. In order to allow the experimentally observed photocurrents electrostatically, a hole mobility of at least 10^–8 m² V^–1 s^–1 is required, which exceeds the observed hole mobility in pristine MDMO‐PPV by more than two orders of magnitude. However, from space‐charge‐limited conduction, admittance spectroscopy, and transient electroluminescence measurements, we found a hole mobility of 2 × 10^–8 m² V^–1 s^–1 for the MDMO‐PPV phase in the blend at room temperature. Consequently, the charge‐carrier transport in a MDMO‐PPV:PCBM‐based solar cell is much more balanced than previously assumed, which is a necessary requirement for the reported high fill factors of above 50 %.     

Electron Transport in a Methanofullerene

The current–voltage characteristics of methanofullerene [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PCBM)‐based devices are investigated as a function of temperature. The occurrence of space–charge limited current enables a direct determination of the electron mobility. At room temperature, an electron mobility of μ_e = 2 × 10^–7 m² V^–1 s^–1 has been obtained. This electron mobility is more than three orders of magnitude larger than the hole mobility of donor‐type conjugated polymer poly(2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐p‐phenylene vinylene) (OC₁C₁₀‐PPV). As a result, the dark current in PCBM/OC₁C₁₀‐PPV based devices is completely dominated by electrons. The observed field and temperature‐dependence of the electron mobility of PCBM can be described with a Gaussian disorder model. This provides information about the energetic disorder and average transport‐site separation in PCBM.     

Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of <Emphasis Type="Italic">p</Emphasis>-Si:B)

A moderately doped semiconductor is considered on the insulator side of the insulator-metal phase transition, where the acceptors in (?1), (0), and (+1) charge states form A ⁰ and A ⁺ bands. The expressions are derived for the Debye-Hückel and Schottky-Mott screening lengths of an external electrostatic field for the case of hopping transport of holes via acceptors. The quasistatic capacitance of a semiconductor is calculated in the temperature region where hopping hole conductances in the A ⁰ and A ⁺ bands are approximately equal. It is shown that the Debye-Hückel screening length can be determined using the measurements of quasistatic capacitance even in the high-field regime, i.e., in the Schottky-Mott approximation. The frequency of an electric signal in the measurements of quasistatic semiconductor capacitance in a metal-insulator-semiconductor structure must be much lower than the average frequency of hole hopping via acceptors (boron atoms in silicon).     

A New Carbazole‐Constructed Hyperbranched Polymer: Convenient One‐Pot Synthesis,Hole‐Transporting Ability,and Field‐Effect Transistor Properties

A new hyperbranched polymer ( HB‐car ), constructed fully by carbazole moieties, is successfully synthesized through a one‐pot Suzuki coupling reaction. The resultant polymer is well‐characterized, and its hole‐transporting ability is studied carefully. The device, in which HB‐car is utilized as a hole‐transporting layer and tris‐(8‐hydroxyquinoline) aluminum as an electron‐emitting layer as well as electron‐transporting layer, gives a much higher efficiency (3.05 cd A^–1), than that of a poly(N‐vinylcarbazole) based device (2.19 cd A^–1) under similar experimental conditions. The remarkable performance is attributed to its low energy barrier and enhanced hole‐drifting ability in the HB‐car based device. In addition, for the first time, a field‐effect transistor (FET) based on the hyperbranched polymer is fabricated, and the organic FET device shows that HB‐car is a typical p‐type FET material with a saturation mobility of 1 × 10^–5 cm² V^–1 s^–1, a threshold voltage of –47.1 V, and an on‐to‐off current ratio of 10³.     

Fullerene Additives Convert Ambipolar Transport to p‐Type Transport while Improving the Operational Stability of Organic Thin Film Transistors

Many high charge carrier mobility (μ) active layers within organic field‐effect transistor (OFET) configurations exhibit non‐linear current–voltage characteristics that may drift with time under applied bias and, when applying conventional equations for ideal FETs, may give inconsistent μ values. This study demonstrates that the introduction of electron deficient fullerene acceptors into thin films comprised of the high‐mobility semiconducting polymer PCDTPT suppresses an undesirable “double‐slope” in the current–voltage characteristics, improves operational stability, and changes ambipolar transport to unipolar transport. Examination of other high μ polymers shows general applicability. This study also shows that one can further reduce instability by tuning the relative electron affinity of the polymer and fullerene by creating blends containing different fullerene derivatives and semiconductor polymers. One can obtain hole μ values up to 5.6 cm² V^–1 s^–1 that are remarkably stable over multiple bias‐sweeping cycles. The results provide a simple, solution‐processable route to dictate transport properties and improve semiconductor durability in systems that display similar non‐idealities.     

Carrier mobility in two-dimensional disordered hopping systems

A model of the equilibrium 2D hopping mobility in a disordered organic semiconductor is formulated for arbitrary charge carrier densities and arbitrary temperatures. The calculated dependence of the 2D mobility upon inverse temperature is compared with experimental data obtained on 2D carrier transport in poly(3-hexylthiophene) thin film field-effect transistors.     

Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells

Copper thiocyanate (CuSCN) has proven to be a low‐cost, efficient hole‐transporting material for the emerging organic–inorganic perovskite solar cells. Herein, we report that CuSCN can also be applied to CdTe thin‐film solar cells to achieve high open‐circuit voltages (V_OCs). By optimizing the thickness of the thermally evaporated CuSCN films, CdTe cells fabricated by close space sublimation in the superstrate configuration have achieved V_OCs as high as 872 mV, which is about 20–25 mV higher than the highest V_OC for the reference cells using the standard Cu/Au back contacts. CuSCN is a wide bandgap p‐type conductor with a conduction band higher than that of CdTe, leading to a conduction band offset that reflects electrons in CdTe, partially explaining the improved V_OCs. However, due to the low conductivity of CuSCN, CdTe cells using CuSCN/Au back contacts exhibited slightly lower fill factors than the cells using Cu/Au back contacts. With optimized CdS:O window layers, the power conversion efficiency of the best CdTe cell, using CuSCN/Au back contact, is 14.7%: slightly lower than that of the best cell (15.2%) using Cu/Au back contact. Copyright © 2015 John Wiley & Sons, Ltd.