共查询到20条相似文献，搜索用时 15 毫秒
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近年来,PLED（聚合物发光二极管）和a-Si TFT（非晶硅薄膜晶体管）技术取得了巨大进展,两者的结合有望成为未来平板电视的主流.三星与杜邦公司已经研制成功14.1英寸的非晶硅薄膜晶体管聚合物发光二极管（a-Si TFT AM-PLED）全彩显示面板.本文介绍该a-Si TFTAMpLED的制作过程,讨论它独特的性能和成本优势,并分析未来平板电视的发展趋势. 相似文献
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Yuanzhi Cao Tianzhao Bu Chunlong Fang Chao Zhang Xiaodong Huang Chi Zhang 《Advanced functional materials》2020,30(35)
Tactile detection is a crucial technology in many fields, such as electronic skin, touch screen control, human prostheses, and screen fingerprint identification. Tribotronics has demonstrated active mechanosensation from external mechanical stimuli, which greatly enriches the sensing mechanisms of tactile detection. In this work, a monolithic integrated indium‐gallium‐zinc‐oxide (InGaZnO or IGZO) thin‐film transistor (TFT) array is developed for high‐resolution tactile detection. By using the conventional semiconductor fabrication processes, each IGZO TFT cell in the array shows uniform electrical performance. In addition, the drain–source current can be individually tuned by the electrostatic potential generated by the contact electrification between a movable gate and the gate dielectric. The monolithic integrated array displays a relatively high resolution of 12 pixels per inch and can realize a millimeter‐level tactile perception and motion tracking. This work presents a facile and viable strategy toward micro/nano‐scale tribotronics, which can realize high‐resolution and large‐scale tactile detection. 相似文献
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Chi Zhang Zhao Hua Zhang Xiang Yang Tao Zhou Chang Bao Han Zhong Lin Wang 《Advanced functional materials》2016,26(15):2554-2560
Tribotronics is a new field developed by coupling triboelectricity and semiconductor, which can drive triboelectric‐charge‐controlled optoelectronic devices by further introducing optoelectronics. In this paper, a tribotronic phototransistor (TPT) is proposed by coupling a field‐effect phototransistor and a triboelectric nanogenerator (TENG), in which the contact‐induced inner gate voltage by the mobile frictional layer is used for modulating the photodetection characteristics of the TPT. Based on the TPT, alternatively, a coupled energy‐harvester (CEH) is fabricated for simultaneously scavenging solar and wind energies, in which the output voltage on the external resistance from the wind driven TENG is used as the gate voltage of the TPT for enhancing the solar energy conversion. As the wind speed increases, the photovoltaic characteristics of the CEH including the short‐circuit current, open‐circuit voltage, and maximal output power have been greatly enhanced. This work has greatly expanded the functionality of tribotronics in photodetection and energy harvesting, and provided a potential solution for highly efficient harvesting and utilizing multitype energy. 相似文献
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在高真空条件下(3×10-4Pa),利用硫系玻璃(Se,Te,Sb)薄膜封装材料对有机电致发光器件(OLED)进行原位封装,有效避免了传统封装方法难以避免的水、氧危害,以达到延长器件寿命的目的。实验对比了正常封装与增加Se、Te、Sb薄膜封装层后器件的性能,对比实验中封装过程都未加干燥剂。研究发现Se、Te、Sb薄膜封装层分别可以使器件的寿命延长1.4倍,2倍,1.3倍以上;采用封装层对器件的电流-电压特性、色坐标等光电性能几乎不产生影响,但影响了器件散热,薄膜封装层使器件的击穿电压、最高亮度等参数稍有下降。 相似文献
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针对聚合物电致发光材料缺乏可用的电子型聚合物半导体材料的现状 ,采用无机电子型半导体材料 Zn O∶Zn与空穴型聚合物材料 PDDOPV [poly (2 ,5 - bis (dodecyloxy) - phenylenevinylene) ]成功制备了结构为 ITO/PDDOPV/Zn O∶ Zn/Al的异质结双层器件 .异质结器件的发光效率与亮度较单层器件提高 1个数量级以上 .该异质结器件的发光颜色是随着电压的增加而蓝移的 ,其光致发光光谱也随着激发波长的改变而改变 ,可能形成了新的发光基团 . 相似文献
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Daniele Braga Nicholas C. Erickson Michael J. Renn Russell J. Holmes C. Daniel Frisbie 《Advanced functional materials》2012,22(8):1623-1631
Switching and control of efficient red, green, and blue active matrix organic light‐emitting devices (AMOLEDs) by printed organic thin‐film electrochemical transistors (OETs) are demonstrated. These all‐organic pixels are characterized by high luminance at low operating voltages and by extremely small transistor dimensions with respect to the OLED active area. A maximum brightness of ≈900 cd m?2 is achieved at diode supply voltages near 4 V and pixel selector (gate) voltages below 1 V. The ratio of OLED to OET area is greater than 100:1 and the pixels may be switched at rates up to 100 Hz. Essential to this demonstration are the use of a high capacitance electrolyte as the gate dielectric layer in the OETs, which affords extremely large transistor transconductances, and novel graded emissive layer (G‐EML) OLED architectures that exhibit low turn‐on voltages and high luminescence efficiency. Collectively, these results suggest that printed OETs, combined with efficient, low voltage OLEDs, could be employed in the fabrication of flexible full‐color AMOLED displays. 相似文献
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Yifei Wang Xiangde Lin Guoyun Gao Jinran Yu Yichen Wei Jie Gong Jia Sun Zhong Lin Wang Qijun Sun 《Advanced functional materials》2024,34(19):2313210
Graphene has attracted considerable interest for next-generation electronics. However, the absence of natural bandgap has limited the current on/off ratio of graphene-based transistors. Vertical integration of 2D heterostructures offers a promising approach to address this challenge, enabling high-current-density vertical field-effect transistor (VFET) with large on/off ratio. Here, a triboelectric potential-powered VFET with a vertical stacked graphene/MoS2 heterostructure and a sliding-mode triboelectric nanogenerator (TENG) coupled with gate dielectrics are proposed. The tribotronic VFET has an ultrashort channel length in vertical direction, exhibiting excellent current driving capability with an ultrahigh on-state current density of 950 A cm−2 and a good current on/off ratio of 630. It also demonstrates reconfigurable diode behavior with a rectification ratio over 102. Temperature-dependent studies are applied to tribotronic devices for the first time, indicating an effective modulation on the Schottky barrier height of 150 meV by the triboelectric potential. A green LED pixel is driven by the tribotronic VFET as a demonstration to work as a tactile interactive light-emitting device. The demonstrated tribotronic vertical device offers a promising strategy for integrating various 2D layered materials with TENG in vertical direction, enabling 3D integration of low-power and interactive devices for next-generation electronics. 相似文献
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有机电致发光器件中有机薄膜的制备方法 总被引：1，自引：0，他引：1
有机电致发光器件中有机薄膜的制备方法非常重要,不同方法制备的薄膜质量不同,这直接影响着器件的效率;制备方法直接影响到产业化中的器件制备成本。根据材料的不同,有机小分子常用真空蒸镀的方法,而高分子材料常用旋涂的方法制备薄膜。随着有机电致发光器件制备工艺的发展,相继出现了其他的制备工艺,如:有机蒸汽喷印(organic vapor jet printing)、有机气相沉积(organic vapor phase deposition)、丝网印刷(screen printing)和喷墨打印(ink jet printing)技术等,这对有机电致发光显示器产业化发展具有巨大的推动作用。文章综述了这些制备方法,比较了它们的优缺点,以及这些工艺对产业化的影响。 相似文献
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有机无机复合膜发光器件的研究 总被引：1，自引：0，他引：1
针对聚合物电致发光（EL）材料缺乏可用的电子型聚合物半导体材料的现状,采用无机电子型半导体材料ZnO：Zn与空穴型聚合物材料poly（2,5bis（dodecyloxy）-phenylenevinylene）（PDDOPV）成功制备了结构为ITO／PDDOPV／ZnO：Zn／Al的有机／无机复合膜双层器件。复合膜器件的发光效率与亮度比单层器件提高了1个数量级以上,而复合膜的电流是单层器件的0．5倍。而且,聚合物／无机物复合膜器件的发光颜色随电压的增加而蓝移,其光致发光（PL）光谱也随激发波长的改变而改变,有可能形成了新的发光基团。 相似文献
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Jeong‐Hwan Lee Tung‐Huei Ke Jan Genoe Paul Heremans Cedric Rolin 《Advanced Electronic Materials》2019,5(1)
A light‐emitting transistor in which two gates, separated by an insulator, partially overlap in the center of the device is proposed. By accumulating charge carriers in dedicated transport layers, each gate independently controls charge injection into the emissive layer sandwiched between the transport layers. This structure combines the advantages of pinned light emission in the center of the channel, gapless charge transport into the recombination zone, and controlled balance of electron and hole concentration at the edges of the emissive layer for any chosen current density. High‐performance devices with overlapping gates are demonstrated: Using a red fluorescent emitter, high external quantum efficiency (5.7%) is conserved up to the highest luminance (2190 cd m−2). A comprehensive optoelectronic device model is proposed that verifies the measured characteristics and confirms that efficiency is highest with balanced charge transport. This device topology opens perspectives in the development of bright thin film light sources driven at high current densities. 相似文献
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有机电致发光器件(OLED)因具有较多的优点,在显示领域有着光明的前景,其最大的优越性在于能够实现柔性显示,制作成柔性有机电致发光二极管(FOLED).OLED对水蒸气和氧气非常敏感,渗透进入器件内部的水蒸气和氧气是影响OLED寿命的主要因素,因此,封装技术对器件非常重要.对现有的主要的FOLED衬底材料和封装方法进行... 相似文献
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采用碳纳米管导电薄膜作为OLED的阳极 总被引：1，自引：1，他引：0
采用碳纳米管(CNT)替代ITO作为OLED阳极可以 解决ITO薄膜存在的可弯曲性能差,可靠性低等缺 点,使得柔性显示成为可能。本文采用混合型CNT导电薄膜作为阳极,探讨了CNT薄膜的制备 工艺、掺 杂方式及表面修饰等因素对绿光OLED性能的影响。实验结果表明,P型掺杂对CNT薄 膜的导电性能影响 有限;而PEDOT修饰层可以很好的提高CNT导电薄膜的平整度;此外,采用“十字交叉 ”的阳极形状有助于降低 阳极拐角处毛刺。通过优化器件各参数,制备的PET/CNTs/PEDOT/NPB/ALq3/LiF/Al绿光OL ED发光效率达 到了195 cd/m2,结果表明采用混合型CNT作为OLED阳极是可行的。 相似文献
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用于AM-OLED的LTPS TFTs的阈值电压(Vth)和沟道迁移率(μ)在空间分布上是不够均匀的,用于AM-OLED的a-Si TFTs的Vth和μ会随时间偏移,这些缺点会造成显示屏亮度的不均匀性和不稳定性.为此,需要引入各种像素补偿电路,使显示屏发光亮度的均匀性和稳定性符合商品要求(文章分为两期刊登,本篇为第一部... 相似文献
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Wai‐Yu Sit Sin Hang Cheung Cyrus Yiu Him Chan Ka Kin Tsung Sai Wing Tsang Shu Kong So 《Advanced Electronic Materials》2016,2(3)
Thin film transistors (TFTs) can be used to determine the bulk‐like mobilities of amorphous semiconductors. Different amine‐based organic hole transporting materials (HTs) used in organic light‐emitting diodes have been investigated. In addition, the present study also measures the TFT hole mobilities of two iridium phosphors: Ir(ppy)3 and Ir(piq)3. These materials are grown separately on SiO2 and polystyrene (PS). On SiO2, the TFT mobilities are found to be 1–2 orders smaller than the bulk values obtained by time‐of‐flight (TOF) technique. On PS gate dielectric layer, the TFT mobilities are in good agreement TOF data. Only 10 nm of organic semiconductor is sufficient for TFTs to achieve TOF mobilities. Using the Gaussian disorder model, it is found that on SiO2 surface, when compared to the bulk values, the energetic disorders (s) of the HTs increase and simultaneously, the high temperature limits (µ∞) of the carrier mobilities decrease. Both s and µ∞ contribute to the reduction of the carrier mobility. The increase in s is related to the presence of randomly oriented polar Si‐O bonds. The reduction of µ∞ on SiO2 is related to the orientations of the more planar molecules which tend to lie horizontally on the surface. 相似文献
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用于AM-OLED的LTPS TFTs的阈值电压（Vth）和沟道迁移率（μ）在空间分布上是不够均匀的,用于AM-OLED的a-Si TFTs的Vth和μ会随时间偏移,这些缺点会造成显示屏亮度的不均匀性和不稳定性。为此,需要引入各种像素补偿电路,使显示屏发光亮度的均匀性和稳定性符合商品要求（文章分为两期刊登,本篇为第二部分）。 相似文献