Piezo‐Phototronic Effect on Performance Enhancement of Anisotype and Isotype Heterojunction Photodiodes

The piezo‐phototronic effect is confirmed as a promising methodology to optimize the performance of optoelectronic devices. However, not only positive effects, but also negative effects may be produced in some types of photodiodes (PDs) by the piezo‐phototronic effect, resulting in the restriction of the PDs' photoresponse performance enhancement. In order to obtain the largest possible photoresponse performance enhancement, it is essential to investigate how the piezo‐phototronic effect influences the photoresponse performance of PDs with different device configurations and structures. Here, the piezo‐phototronic effect on the photoresponse performance enhancement of anisotype (p‐Si/n‐ZnO) and isotype (n‐Si/n‐ZnO) heterojunction PDs is thoroughly investigated. The experimental results show that the piezo‐phototronic effect induced improvement of the p‐Si/n‐ZnO heterojunction PD is much larger than that of the n‐Si/n‐ZnO heterojunction PD. The energy band diagrams under compressive strains are carefully analyzed, revealing that two positive effects are introduced to the p‐Si/n‐ZnO heterojunction PD, whereas one positive and two negative effects are introduced to the n‐Si/n‐ZnO heterojunction PD by the piezo‐phototronic effect. This work presents an in‐depth understanding about the piezo‐phototronic effect on the photoresponse performances of PDs with different device configurations and structures.     

Piezo‐Phototronic Effect for Enhanced Flexible MoS2/WSe2 van der Waals Photodiodes

The recent discoveries of transition‐metal dichalcogenides (TMDs) as novel 2D electronic materials hold great promise to a rich variety of artificial van der Waals (vdWs) heterojunctions and superlattices. Moreover, most of the monolayer TMDs become intrinsically piezoelectric due to the lack of structural centrosymmetry, which offers them a new degree of freedom to interact with external mechanical stimuli. Here, fabrication of flexible vdWs p–n diode by vertically stacking monolayer n‐MoS₂ and a few‐layer p‐WSe₂ is achieved. Electrical measurement of the junction reveals excellent current rectification behavior with an ideality factor of 1.68 and photovoltaic response is realized. Performance modulation of the photodiode via piezo‐phototronic effect is also demonstrated. The optimized photoresponsivity increases by 86% when introducing a −0.62% compressive strain along MoS₂ armchair direction, which originates from realigned energy‐band profile at MoS₂/WSe₂ interface under strain‐induced piezoelectric polarization charges. This new coupling mode among piezoelectricity, semiconducting, and optical properties in 2D materials provides a new route to strain‐tunable vdWs heterojunctions and may enable the development of novel ultrathin optoelectronics.     

Comprehensive Pyro‐Phototronic Effect Enhanced Ultraviolet Detector with ZnO/Ag Schottky Junction

As a coupling effect of pyroelectric and photoelectric effect, pyro‐phototronic effect has demonstrated an excellent tuning role for fast response p–n junction photodetectors (PDs). Here, a comprehensive pyro‐phototronic effect is utilized to design and fabricate a self‐powered and flexible ultraviolet PD based on the ZnO/Ag Schottky junction. By using the primary pyroelectric effect, the maximal transient photoresponsivity of the self‐powered PDs can reach up to 1.25 mA W^?1 for 325 nm illumination, which is improved by 1465% relative to that obtained from the steady‐state signal. The relative persistent secondary pyroelectric effect weakens the height of Schottky barrier, leading to a reduction of the steady‐state photocurrent with an increase in the power density. When the power density is large enough, the steady‐state photocurrent turns into a reverse direction. The corresponding tuning mechanisms of the comprehensive pyro‐phototronic effect on transient and steady‐state photocurrent are revealed based on the bandgap diagrams. The results may help us to further clarify the mechanism of the pyro‐phototronic effect on the photocurrent and also provide a potential way to optimize the performance of self‐powered PDs.     

Low‐Voltage Current‐Sensing CMOS Interface Circuit for Piezo‐Resistive Pressure Sensor

A new low‐voltage CMOS interface circuit with digital output for piezo‐resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo‐resistance due to applied pressure and to allow low‐voltage circuit operation. A simple 1‐bit first‐order delta‐sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 µm CMOS technology and draws less than 200 µA from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non‐linearity error.     

A Monocharged Electret Nanogenerator‐Based Self‐Powered Device for Pressure and Tactile Sensor Applications

This study reports a self‐powered pressure sensor based on a monocharged electret nanogenerator (MENG). The sensor exhibits great advantages in terms of high reliability, ease of fabrication, and relatively high sensitivity. The working mechanism of the MENG sensor is studied by both theoretical derivations and finite element analyses to determine the electric potential distribution during the device operation. The MENG sensor exhibits a stable open circuit voltage ≈10 V at a 30.8 kPa pressure and a corresponding sensitivity of 325 mV kPa^?1. The stability testing result shows that the device has only ≈5% attenuation after 10 000 cycles of repeated testing at 30.8 kPa pressure. Furthermore, it is found that the MENG sensor responds not only to a dynamic force but also a static force. Finally, a sensor array consisting of nine MENG sensor elements is fabricated. The testing results from the sensor array also reveal that a single touch of the sensor element can immediately light up an LED light at the corresponding position. This device holds great promise for use in future tactile sensors and artificial skin applications.     

A Self‐Healable,Highly Stretchable,and Solution Processable Conductive Polymer Composite for Ultrasensitive Strain and Pressure Sensing

Mimicking human skin's functions to develop electronic skins has inspired tremendous efforts in design and synthesis of novel soft materials with simplified fabrication methods. However, it still remains a great challenge to develop electronically conductive materials that are both stretchable and self‐healable. Here it is demonstrated that a ternary polymer composite comprised of polyaniline, polyacrylic acid, and phytic acid can exhibit high stretchability ( ≈ 500%) and excellent self‐healing properties. The polymer composite with optimized composition shows an electrical conductivity of 0.12 S cm^?1. On rupture, both electrical and mechanical properties can be restored with ≈ 99% efficiency in a 24 h period, which is enabled by the dynamic hydrogen bonding and electrostatic interactions. It is further shown that this composite is both strain and pressure sensitive, and therefore can be used for fabricating strain and pressure sensors to detect a variety of mechanical deformations with ultrahigh sensitivity. The sensitivity and sensing range are the highest among all of the reported self‐healable piezoresistive pressure sensors and even surpass most flexible mechanical sensors. Notably, this composite is prepared via a solution casting process, which potentially allows for large‐area, low‐cost fabrication electronic skins.     

Infrared Detection Using Transparent and Flexible Field‐Effect Transistor Array with Solution Processable Nanocomposite Channel of Reduced Graphene Oxide and P(VDF‐TrFE)

Photodetectors using optically responsive graphene (Gr) or reduced graphene oxide (R‐GO) on rigid substrates have showed promising results for detection of broad band light including infrared (IR). However, there have been only a few reports on Gr or R‐GO photodetectors with new functionalities such as optical transparency and/or flexibility. Herein, a new kind of transparent and flexible IR photodetector is presented using a field‐effect transistor (FET) structure in which an IR‐responsive nanocomposite layer of R‐GO and poly(vinylidenefluoride‐co‐trifluoroethylene) (P(VDF‐TrFE)) is employed as the channel. The IR photodetector exhibits high IR responsivity, stability, and reproducibility under mechanical strain and ambient conditions. In addition, the capability of measuring the distribution of responses from each device in the transparent and flexible nanocomposite FET array under IR radiation from the human body is also demonstrated. Therefore, the development of a flexible IR photodetector with high responsivity, transparency, ease of integration, and stability in an ambient environment is a suitable alternative approach for achieving the stable monitoring of IR in many flexible and transparent electronic systems.     

1D versus 2D Growth of Soluble Acene Crystals from Soluble Acene/Polymer Blends Governed by a Residual Solvent Reservoir in a Phase‐Separated Polymer Matrix

The growth mechanism of soluble acene is highly dependent on the remaining residual solvent following solution processing. The relationship between the amount of residual solvent and the growth modes of a prototypical soluble acene, 6,13‐bis(triisopropylsilylethynyl)pentacene (TIPS‐pentacene) are examined under spin casting TIPS‐pentacene/insulating polymer blends. Changing spin time of the blend solution allows to control the amount of residual solvent, which significantly determines the growth modes of TIPS‐pentacene vertically segregated onto the insulating polymer. In situ observation of crystal growth reveals that excess residual solvent in short spin time induces a convective flow in a drying droplet, thereby resulting in 1D growth of TIPS‐pentacene crystals. On the other hand, optimal amount of residual solvent in a moderate spin time results in 2D growth of TIPS‐pentacene crystals. The well‐developed 2D spherulites allow for higher field‐effect mobility than that of the 1D crystals because of the higher perfectness and coverage of TIPS‐pentacene crystals. The use of other types of soluble acene and insulating polymer only changes the kinetics of crystallization, while the transition of growth mode from 1D to 2D is still observed. This general growth mechanism facilitates the understanding of crystallization behavior of soluble acene for the development of high‐performance organic transistors.