The Characteristics of Cu2O Thin Films Deposited Using RF‐Magnetron Sputtering Method with Nitrogen‐Ambient

We investigate the characteristics of Cu₂O thin films deposited through the addition of N₂ gas. The addition of N₂ gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase (6CuO·Cu₂O) appears at a N₂ flow rate of 1 sccm, and a Cu₂O (200) phase is then preferentially grown at a higher feeding amount of N₂. The optical and electrical properties of Cu₂O thin films are improved with a sufficient N₂ flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of 1.5×10^?2 S/cm are obtained. These high‐quality Cu₂O thin films are expected to be applied to Cu₂O‐based heterojunction solar cells and optical functional films.     

Efficient Field Emission from Vertically Aligned Cu2O1‐δ(111) Nanostructure Influenced by Oxygen Vacancy

In the architecture described, cuprous oxide (Cu₂O) is tamed to be highly (111) plane oriented nanostructure through adjusting the deposition postulate by glancing angle deposition technique. In the controlled atmosphere oxygen vacancy is introduced into the Cu₂O crystal subsequently fostering an impurity energy state (E_im) close to the conduction band. Our model of Cu₂O electronic structure using density functional theory suggests that oxygen vacancies enhance the electron donating ability because of unshared d‐electrons of Cu atoms (nearest to the vacancy site), allowing to pin the work function energy level around 0.28 eV compared to the bulk. This result is also complemented by Kelvin probe force microscopy analysis and X‐ray photoelectron spectroscopy method. Oxygen vacancy in Cu₂O (Cu₂O_1‐δ) exhibits promising field emission properties with interesting field electron tunneling behavior at different applied fields. The films show very low turn‐on and threshold voltages of value 0.8 and 2.4 V μm^?1 respectively which is influenced by the oxygen vacancy. Here, a correlation between the work function modulation due to the oxygen vacancy and enhancement of field emission of Cu₂O_1–δ nanostructure is demonstrated. This work reveals a promising new vision for Cu₂O as a low power field emitter device.     

Nanoscale Cu<Subscript>2</Subscript>O films: Radio-frequency magnetron sputtering and structural and optical studies

Nanoscale copper (I) oxide layers are formed by magnetron-assisted sputtering onto glassy and silicon substrates in an oxygen-free environment at room temperature, and the structural and optical properties of the layers are studied. It is shown that copper oxide formed on a silicon substrate exhibits a lower degree of disorder than that formed on a glassy substrate, which is supported by the observation of a higher intensity and a smaller half-width of reflections in the diffraction pattern. The highest intensity of reflections in the diffraction pattern is observed for Cu₂O films grown on silicon at a magnetron power of 150 W. The absorption and transmittance spectra of these Cu₂O films are in agreement with the well-known spectra of bulk crystals. In the Raman spectra of the films, phonons inherent in the crystal lattice of cubic Cu₂O crystals are identified.     

Block‐Copolymer‐Templated Synthesis of Electroactive RuO2‐Based Mesoporous Thin Films

RuO₂‐based mesoporous thin films of optical quality are synthesized from ruthenium‐peroxo‐based sols using micelle templates made of amphiphilic polystyrene‐polyethylene oxide block copolymers. The mesoporous structure and physical properties of the RuO₂ films (mesoporous volume: 30%; pore diameter: ～30 nm) can be controlled by the careful tuning of both the precursor solution and thermal treatment (150–350 °C). The optimal temperature that allows control of both mesoporosity and nanocristallinity is strongly dependent on the substrate (silicon or fluorine‐doped tin oxide). The structure of the resulting mesoporous films are investigated using X‐ray diffraction, X‐ray photoelectron spectroscopy, and atomic force microscopy. Mesoporous layers are additionally characterized by transmission and scanning electron microscopy and ellipsometry while their electrochemical properties are analyzed via cyclic voltammetry. Thick mesoporous films of ruthenium oxide hydrates, RuO₂ · xH₂O, obtained using a thermal treatment at 280 °C, exhibit capacitances as high as 1000 ± 100 F g^?1 at a scan rate of 10 mV s^?1, indicating their potential application as electrode materials.     

High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics

The properties of metal oxides with high dielectric constant (k) are being extensively studied for use as gate dielectric alternatives to silicon dioxide (SiO₂). Despite their attractive properties, these high‐k dielectrics are usually manufactured using costly vacuum‐based techniques. In that respect, recent research has been focused on the development of alternative deposition methods based on solution‐processable metal oxides. Here, the application of the spray pyrolysis (SP) technique for processing high‐quality hafnium oxide (HfO₂) gate dielectrics and their implementation in thin film transistors employing spray‐coated zinc oxide (ZnO) semiconducting channels are reported. The films are studied by means of admittance spectroscopy, atomic force microscopy, X‐ray diffraction, UV–Visible absorption spectroscopy, FTIR, spectroscopic ellipsometry, and field‐effect measurements. Analyses reveal polycrystalline HfO₂ layers of monoclinic structure that exhibit wide band gap (≈5.7 eV), low roughness (≈0.8 nm), high dielectric constant (k ≈ 18.8), and high breakdown voltage (≈2.7 MV/cm). Thin film transistors based on HfO₂/ZnO stacks exhibit excellent electron transport characteristics with low operating voltages (≈6 V), high on/off current modulation ratio (～10⁷) and electron mobility in excess of 40 cm² V^?1 s^?1.     

Ultrasensitive Detection of VOCs Using a High‐Resolution CuO/Cu2O/Ag Nanopattern Sensor

The p‐type semiconducting copper oxides (CuO and Cu₂O) are promising materials for gas sensors, owing to their characteristic oxygen adsorption properties and low operation temperature. In this study, the sensing performance of a CuO‐based chemiresistor is significantly enhanced by incorporating Ag nanoparticles on high‐resolution p‐type CuO/Cu₂O nanopattern channels. The high‐resolution CuO/Cu₂O/Ag nanochannel is fabricated using a unique top‐down nanolithographic approach. The gas response (ΔR/R_a) of the CuO/Cu₂O/Ag gas sensor increases by a maximum factor of 7.3 for various volatile organic compounds compared with a pristine CuO/Cu₂O gas sensor. The sensors exhibit remarkable sensitivity (ΔR/R_a = 8.04) at 125 parts per billion (ppb) for acetone analytes. As far as it is known, this is the highest sensitivity achieved for p‐type metal oxide semiconductor (MOS)‐based gas sensors compared to previous studies. Furthermore, the outstanding gas responses observed in this study are superior to the most of n‐type MOS‐based gas sensors. The high sensitivity of the sensor is attributed to i) the high resolution (≈30 nm), high aspect ratio (≈12), and ultrasmall grain boundaries (≈10 nm) of the CuO/Cu₂O nanopatterns and ii) the electronic sensitization and chemical sensitization effects induced by incorporating Ag nanoparticles on the CuO/Cu₂O channels.     

Ruthenium Oxide Hydrogen Evolution Catalysis on Composite Cuprous Oxide Water‐Splitting Photocathodes

Photocathodes based on cuprous oxide (Cu₂O) are promising materials for large scale and widespread solar fuel generation due to the abundance of copper, suitable bandgap, and favorable band alignments for reducing water and carbon dioxide. A protective overlayer is required to stabilize the Cu₂O in aqueous media under illumination, and the interface between this overlayer and the catalyst nanoparticles was previously identified as a key source of instability. Here, the properties of the protective titanium dioxide overlayer of composite cuprous oxide photocathodes are further investigated, as well as an oxide‐based hydrogen evolution catalyst, ruthenium oxide (RuO₂). The RuO₂‐catalyzed photoelectrodes exhibit much improved stability versus platinum nanoparticles, with 94% stability after 8 h of light‐chopping chronoamperometry. Faradaic efficiencies of ～100% are obtained as determined by measurement of the evolved hydrogen gas. The sustained photocurrents of close to 5 mA cm^?2 obtained with this electrode during the chronoamperometry measurement (at 0 V vs. the reversible hydrogen electrode, pH 5, and simulated 1 sun illumination) would correspond to greater than 6% solar‐to‐hydrogen conversion efficiency in a tandem photoelectrochemical cell, where the bias is provided by a photovoltaic device such as a dye‐sensitized solar cell.     

Single‐Step Deposition of Au‐ and Pt‐Nanoparticle‐Functionalized Tungsten Oxide Nanoneedles Synthesized Via Aerosol‐Assisted CVD,and Used for Fabrication of Selective Gas Microsensor Arrays

Tungsten oxide nanostructures functionalized with gold or platinum NPs are synthesized and integrated, using a single‐step method via aerosol‐assisted chemical vapour deposition, onto micro‐electromechanical system (MEMS)‐based gas‐sensor platforms. This co‐deposition method is demonstrated to be an effective route to incorporate metal nanoparticles (NP) or combinations of metal NPs into nanostructured materials, resulting in an attractive way of tuning functionality in metal oxides (MOX). The results show variations in electronic and sensing properties of tungsten oxide according to the metal NPs introduced, which are used to discriminate effectively analytes (C₂H₅OH, H₂, and CO) that are present in proton‐exchange fuel cells. Improved sensing characteristics, in particular to H₂, are observed at 250 °C with Pt‐functionalized tungsten oxide films, whereas non‐functionalized tungsten oxide films show responses to low concentrations of CO at low temperatures. Differences in the sensing characteristics of these films are attributed to the different reactivities of metal NPs (Au and Pt), and to the degree of electronic interaction at the MOX/metal NP interface. The method presented in this work has advantages over other methods of integrating nanomaterials and devices, of having fewer processing steps, relatively low processing temperature, and no requirement for substrate pre‐treatment.     

High Efficiency Semiconductor‐Liquid Junction Solar Cells based on Cu/Cu2O

Cu/Cu₂O photoelectrodes are synthesized by a simple electrodepositing process at low temperature. The values of the electrolyte pH have great influence on the morphology and the compositions of the obtained films, and thus affect the performance of the electrodes. The best device based on Cu/Cu₂O and I^?/I₃^? electrolyte gives a high conversion efficiency of 3.13% under simulated AM1.5G illumination. To the best of our knowledge, this is the highest efficiency reported for solar cells based on electrodeposited Cu₂O. For comparison purposes, pure Cu₂O films are also synthesized. The performance of the solar cells based on pure Cu₂O is very poor, as low as 0.013%. In addition, the Cu/Cu₂O films are perfectly compatible with the lightweight plastic substrates and yielded a power conversion efficiency of 1.44%.     

Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

Solution‐processed metal‐oxide thin films based on high dielectric constant (k) materials have been extensively studied for use in low‐cost and high‐performance thin‐film transistors (TFTs). Here, scandium oxide (ScO_x) is fabricated as a TFT dielectric with excellent electrical properties using a novel water‐inducement method. The thin films are annealed at various temperatures and characterized by using X‐ray diffraction, atomic‐force microscopy, X‐ray photoelectron spectroscopy, optical spectroscopy, and a series of electrical measurements. The optimized ScO_x thin film exhibits a low‐leakage current density of 0.2 nA cm^?2 at 2 MV cm^?1, a large areal capacitance of 460 nF cm^?2 at 20 Hz and a permittivity of 12.1. To verify the possible applications of ScO_x thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, they were integrated in both n‐type InZnO (IZO) and p‐type CuO TFTs for testing. The water‐induced full oxide IZO/ScO_x TFTs exhibit an excellent performance, including a high electron mobility of 27.7 cm² V^?1 s^?1, a large current ratio (I_on/I_off) of 2.7 × 10⁷ and high stability. Moreover, as far as we know it is the first time that solution‐processed p‐type oxide TFTs based on a high‐k dielectric are achieved. The as‐fabricated p‐type CuO/ScO_x TFTs exhibit a large I_on/I_off of around 10⁵ and a hole mobility of 0.8 cm² V^?1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution‐processed p‐type TFTs, which represents a great step towards the achievement of low‐cost, all‐oxide, and low‐power consumption CMOS logics.     

A Facet‐Dependent Schottky‐Junction Electron Shuttle in a BiVO4{010}–Au–Cu2O Z‐Scheme Photocatalyst for Efficient Charge Separation

Interfacial charge separation and transfer are the main challenges of efficient semiconductor‐based Z‐scheme photocatalytic systems. Here, it is discovered that a Schottky junction at the interface between the BiVO₄ {010} facet and Au is an efficient electron‐transfer route useful for constructing a high‐performance BiVO₄{010}–Au–Cu₂O Z‐scheme photocatalyst. Spectroscopic and computational studies reveal that hot electrons in BiVO₄ {010} more easily cross the Schottky barrier to expedite the migration from BiVO₄ {010} to Au and are subsequently captured by the excited holes in Cu₂O. This crystal‐facet‐dependent electron shuttle allows the long‐lived holes and electrons to stay in the valence band of BiVO₄ and conduction band of Cu₂O, respectively, contributing to improved light‐driven CO₂ reduction. This unique semiconductor crystal‐facet sandwich structure will provide an innovative strategy for rational design of advanced Z‐scheme photocatalysts.     

Aqueous Deposition of Ultraviolet Luminescent Columnar Tin‐Doped Indium Hydroxide Films

Indium tin oxide (ITO) has attracted intense interest as the most important transparent conducting oxide (TCO) that sees wide use in many opto‐electronic and photo‐chemical devices. The goal of this study is to explore the possibility of depositing ITO thin films using a bioinspired aqueous deposition route as an alternative. On the surface of sulfonated‐self assembled monolayers, Sn‐doped indium hydroxide films are obtained via a hydrogen peroxide‐assisted method. As a result, the as‐deposited indium tin hydroxide films possess a single hexagonal phase of In(OH)₃· xH₂O (0 ≤ x ≤ 1) with Sn doping percentage of (1.7 ± 0.2) at % and a column‐like hierachical microstructure. Structural, compositional and property studies, including electron microscopy, X‐ray diffraction, photoelectron spectroscopy, optical transmittance, photoluminescence and four‐probe conductivity measurements, are conducted. The possible mechanism based on oriented attachment is discussed for the film growth. Strong room temperature photoluminescence within the near UV range is observed in the case of Sn‐doped, but not in the one of the pure In(OH)₃· xH₂O films. Annealing of the indium tin hydroxide films above 200 °C gives nanocrystalline Sn:In₂O₃ films with higher UV and visible transparency and electrical conductivity compared with those of pure In₂O₃ films. The influence of annealing atmosphere is investigated.     

Molecule Charge Transfer Doping for p‐Channel Solution‐Processed Copper Oxide Transistors

The doping of semiconductors plays a critical role in improving the performance of modern electronic devices by precisely controlling the charge carrier density. However, the absence of a stable doping method for p‐type oxide semiconductors has severely restricted the development of metal oxide‐based transparent p–n junctions and complementary circuits. Here, an efficient and stable doping process for p‐type oxide semiconductors by using molecule charge transfer doping with tetrafluoro‐tetracyanoquinodimethane (F₄TCNQ) is reported. The selections of a suitable dopant and geometry play a crucial role in the charge‐transfer doping effect. The insertion of a F₄TCNQ thin dopant film (2–7 nm) between a Au source‐drain electrode and solution‐processed p‐type copper oxide (Cu_xO) film in bottom‐gate top‐contact thin‐film transistors (TFTs) provides a mobility enhancement of over 20‐fold with the desired threshold voltage adjustment. By combining doped p‐type Cu_xO and n‐type indium gallium zinc oxide TFTs, a solution‐processed transparent complementary metal‐oxide semiconductor inverter is demonstrated with a high gain voltage of 50. This novel p‐doping method is expected to accelerate the development of high‐performance and reliable p‐channel oxide transistors and has the potential for widespread applications.     

Magnetic Cores with Porous Coatings: Growth of Metal‐Organic Frameworks on Particles Using Liquid Phase Epitaxy

A novel method for the homogeneous coating of magnetic nanoparticles with metal organic frameworks (MOFs) is reported. Using a liquid phase epitaxy process, a well‐defined number of [Cu₃(btc)₂]nH₂O, HKUST‐1, layers are grown on COOH terminated silica magnetic beads. The structure and porosity of the deposited MOF coatings are studied using X‐ray diffraction and BET analysis. In addition, size and shape of the fabricated composites are analyzed by transmission electron microscopy. Potential applications of particle based MOF films include catalytic coatings and chromatographic media.     

Highly conductive ZnO films with high near infrared transparency

We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n‐type window of low band gap solar cells. We demonstrate that low‐voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non‐reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10⁻³Ω cm). The films prepared with additional RF biasing possess lower free‐carrier concentration and higher free‐carrier mobility than Al‐doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high‐temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se₂, CuInSe₂ and Cu₂ZnSnSe₄‐based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density J_SC. This aspect is specifically beneficial in preparation of the Cu₂ZnSnSe₄ solar cells with band gap down to 0.85 eV; our champion device reached a J_SC of nearly 39 mAcm⁻², an open circuit voltage of 378mV, and a power conversion efficiency of 8.4 %. Copyright © 2015 John Wiley & Sons, Ltd.     

N掺杂Cu2O宽光谱吸收材料的实验与计算研究

采用热氧化的方法制备了高择优取向的Cu2O薄膜。并通过离子注入对其进行了不同浓度的N掺杂。吸收谱测试显示高剂量的N掺杂Cu2O薄膜在带隙以下有吸收峰出现。采用第一性原理方法对N掺杂Cu2O的几何、电子结构及光学性质进行了比较系统的研究。计算结果表明,高浓度的N掺杂在Cu2O禁带中引入了一个中间带。价带到中间带的电子跃迁与实验观察到的吸收峰相吻合。实验和计算结果显示N掺杂Cu2O材料在制备宽光谱探测器和中间带太阳电池方面有很大潜能。     

A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces,and Corresponding Improvement of Electrodeposited ZnO‐Cu2O Photovoltaics

A novel buffering method is presented to improve the stability of zinc oxide processed in aqueous solutions. By buffering the aqueous solution with a suitable quantity of sacrificial zinc species, the dissolution of functional zinc oxide structures and the formation of unwanted impurities can be prevented. The method is demonstrated for ZnO films and nanowires processed in aqueous solutions used for the selective etching of mesoporous anodic alumina templates and the electrochemical deposition of Cu₂O. In both cases, improved ZnO stability is observed with the buffering method. ZnO‐Cu₂O heterojunction solar cells (bilayer and nanowire cells) synthesized using both traditional and buffered deposition methods are characterized by impedance spectroscopy and solar simulation measurements. Buffering the Cu₂O deposition solution is found to reduce unwanted recombination at the heterojunction and improve the photovoltaic performance.     

Salt‐Assisted Growth of P‐type Cu9S5 Nanoflakes for P‐N Heterojunction Photodetectors with High Responsivity

P‐n junctions based on two dimensional (2D) van der Waals (vdW) heterostructure are one of the most promising alternatives in next‐generation electronics and optoelectronics. By choosing different 2D transition metal dichalcogenides (TMDCs), the p‐n junctions have tailored energy band alignments and exhibit superior performance as photodetectors. The p‐n diodes working at reverse bias commonly have high detectivity due to suppressed dark current but suffer from low responsivity resulting from small quantum efficiency. Greater build‐in electric field in the depletion layer can improve the quantum efficiency by reducing recombination of charge carriers. Herein, Cu₉S₅, a novel p‐type semiconductor with direct bandgap and high optical absorption coefficient, is synthesized by salt‐assisted chemical vapor deposition (CVD) method. The high density of holes in Cu₉S₅ endows the constructed p‐n junction, Cu₉S₅/MoS₂, with strong build‐in electric field according to Anderson heterojunction model. Consequently, the Cu₉S₅/MoS₂ p‐n heterojunction has low dark current at reverse bias and high photoresponse under illumination due to the efficient charge separation. The Cu₉S₅/MoS₂ photodetector exhibits good photodetectivity of 1.6 × 10¹² Jones and photoresponsivity of 76 A W^?1 under illumination. This study demonstrates Cu₉S₅ as a promising p‐type semiconductor for high‐performance p‐n heterojunction diodes.     

Highly Organized Mesoporous TiO2 Films with Controlled Crystallinity: A Li‐Insertion Study

A study of electrochemical Li insertion combined with structural and textural analysis enabled the identification and quantification of individual crystalline and amorphous phases in mesoporous TiO₂ films prepared by the evaporation‐induced self‐assembly procedure. It was found that the properties of the amphiphilic block copolymers used as templates, namely those of a novel poly(ethylene‐co‐butylene)‐b‐poly(ethylene oxide) polymer (KLE) and commercial Pluronic P123 (HO(CH₂CH₂O)₂₀(CH₂CH(CH₃)O)₇₀(CH₂CH₂O)₂₀H), decisively influence the physicochemical properties of the resulting films. The KLE‐templated films possess a 3D cubic mesoporous structure and are practically amorphous when calcined at temperatures below 450 °C, but treatment at 550–700 °C provides a pure‐phase (anatase), fully crystalline material with intact mesoporous architecture. The electrochemically determined fraction of crystalline anatase increases from 85 to 100 % for films calcined at 550 and 700 °C, respectively. In contrast, the films prepared using Pluronic P123, which also show a 3D cubic pore arrangement, exhibit almost 50 % crystallinity even at a calcination temperature of 400 °C, and their transformation into a fully crystalline material is accompanied by collapse of the mesoporous texture. Therefore, our study revealed the significance of using suitable block‐copolymer templates for the generation of mesoporous metal oxide films. Coupling of both electrochemical and X‐ray diffraction methods has shown to be highly advisable for the correct interpretation of structure properties, in particular the crystallinity, of such sol–gel derived films.     

Temperature‐Induced Stacking to Create Cu2O Concave Sphere for Light Trapping Capable of Ultrasensitive Single‐Particle Surface‐Enhanced Raman Scattering

The fabrication of bowl or concave particles with “asymmetric centers” has drawn considerable attentions, in which multiple scattering occurs inside the particles and the ability of light scattering is distinctly enhanced. However, the limited variety of templates, the uncontrollable dimensions such as the size of concavity and the complex growth process have posed serious limitations to the reproducible construction of concave particles with desired geometries and their light‐trapping properties. Herein, a “temperature‐induced stacking” strategy is proposed to create controllable concavity Cu₂O spheres for the first time. Different sizes of F68 micelles can be formed through aggregation under different reaction temperatures, which can serve as soft template to tailor concave geometries of Cu₂O spheres. The as‐prepared Cu₂O concave sphere (CS) can serve as single‐particle (SP) surface‐enhanced Raman scattering (SERS) substrate for highly repeatable and consistent Raman spectra. The unique cavity of Cu₂O CS entraps light effectively, which also enhances the scattering length owing to multiple light scattering. Combined with slightly increased surface area and charge‐transfer process, Cu₂O CS exhibits remarkable single‐particle SERS performance, with an ultralow low detection limit (2 × 10^?8 mol L^?1) and metal comparable enhancement factor (2.8 × 10⁵).