Membrane‐Free Detection of Metal Cations with an Organic Electrochemical Transistor

Alkali‐metal ions, particularly sodium (Na⁺) and potassium (K⁺), are the messengers of living cells, governing a cascade of physiological processes through the action of ion channels. Devices that can monitor, in real time, the concentrations of these cations in aqueous media are in demand not only for the study of cellular machinery, but also to detect conditions in the human body that lead to electrolyte imbalance. In this work, conducting polymers are developed that respond rapidly and selectively to varying concentrations of Na⁺ and K⁺ in aqueous media. These polymer films, bearing crown‐ether‐functionalized thiophene units specific to either Na⁺ or K⁺, generate an electrical output proportional to the cation type and concentration. Using electropolymerization, the ion‐selective polymers are integrated as the gate electrode of an organic electrochemical transistor (OECT). The OECT current changes with respect to the concentration of the ion to which the polymer electrode is selective. Designed as a single, miniaturized chip, the OECT enables the selective detection of the cations within a physiologically relevant range. These electrochemical ion sensors require neither ion‐selective membranes nor a reference electrode to operate and have the potential to surpass existing technologies for the detection of alkali‐metal ions in aqueous media.     

Air‐Stable n‐Type Organic Field‐Effect Transistors Based on Carbonyl‐Bridged Bithiazole Derivatives

An electronegative conjugated compound composed of a newly designed carbonyl‐bridged bithiazole unit and trifluoroacetyl terminal groups is synthesized as a candidate for air‐stable n‐type organic field‐effect transistor (OFET) materials. Cyclic voltammetry measurements reveal that carbonyl‐bridging contributes both to lowering the lowest unoccupied molecular orbital energy level and to stabilizing the anionic species. X‐ray crystallographic analysis of the compound shows a planar molecular geometry and a dense molecular packing, which is advantageous to electron transport. Through these appropriate electrochemical properties and structures for n‐type semiconductor materials, OFET devices based on this compound show electron mobilities as high as 0.06 cm² V^?1 s^?1 with on/off ratios of 10⁶ and threshold voltages of 20 V under vacuum conditions. Furthermore, these devices show the same order of electron mobility under ambient conditions.     

Silaindacenodithiophene‐Based Low Band Gap Polymers – The Effect of Fluorine Substitution on Device Performances and Film Morphologies

Silaindacenodithiophene is copolymerized with benzo[c][1,2,5]thiadiazole ( BT ) and 4,7‐di(thiophen‐2‐yl)benzo[c][1,2,5]thiadiazole ( DTBT ), respectively their fluorinated counter parts 5,6‐difluorobenzo[c][1,2,5]thiadiazole ( 2FBT ) and 5,6‐difluoro‐4,7‐di(thiophen‐2‐yl) benzo[c][1,2,5]thiadiazole ( 2FDTBT ). The influence of the thienyl spacers and fluorine atoms on molecular packing and active layer morphology is investigated with regard to device performances. bulk heterojunction (BHJ) solar cells based on silaindacenodithiophene donor‐acceptor polymers achieved PCE's of 4.5% and hole mobilities of as high as 0.28 cm²/(V s) are achieved in an organic field‐effect transistor (OFET).     

Solution Processable Fluorenyl Hexa‐peri‐hexabenzocoronenes in Organic Field‐Effect Transistors and Solar Cells

The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field‐effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa‐peri‐hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from ¹H NMR and 2D wide‐angle X‐ray scattering (2D WAXS) experiments that the sterically demanding 9,9‐dioctylfluorene groups are preventing π–π intermolecular contact in the hexakis‐substituted FHBC 4 . For bis‐substituted FHBC compounds 5 and 6 , π–π intermolecular contact was observed in solution and hexagonal columnar ordering was observed in solid state. Furthermore, in atomic force microscopy (AFM) experiments, nanoscale phase separation was observed in thin films of FHBC and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PC₆₁BM) blends. The differences in molecular and bulk structural features were found to correlate with OFET and BHJ solar cell performance. Poor OFET and BHJ solar cells devices were obtained for FHBC compound 4 while compounds 5 and 6 gave excellent devices. In particular, the field‐effect mobility of FHBC 6 , deposited by spin‐casting, reached 2.8 × 10^?3 cm² V^?1 s and a power conversion efficiency of 1.5% was recorded for the BHJ solar cell containing FHBC 6 and PC₆₁BM.     

Porous Organic Field‐Effect Transistors for Enhanced Chemical Sensing Performances

The thin‐film structures of chemical sensors based on conventional organic field‐effect transistors (OFETs) can limit the sensitivity of the devices toward chemical vapors, because charge carriers in OFETs are usually concentrated within a few molecular layers at the bottom of the organic semiconductor (OSC) film near the dielectric/semiconductor interface. Chemical vapor molecules have to diffuse through the OSC films before they can interact with charge carriers in the OFET conduction channel. It has been demonstrated that OFET ammonia sensors with porous OSC films can be fabricated by a simple vacuum freeze‐drying template method. The resulted devices can have ammonia sensitivity not only much higher than the pristine OFETs with thin‐film structure but also better than any previously reported OFET sensors, to the best of our knowledge. The porous OFETs show a relative sensitivity as high as 340% ppm^?1 upon exposure to 10 parts per billion (ppb) NH₃. In addition, the devices also exhibit decent selectivity and stability. This general and simple strategy can be applied to a wide range of OFET chemical sensors to improve the device sensitivity.     

Organic Transistor Based on Cyclopentadithiophene‐Benzothiadiazole Donor–Acceptor Copolymer for the Detection and Discrimination between Multiple Structural Isomers

Distinguishing structural isomers is a critical and challenging task for biotechnology, chemical industry, and environmental monitoring. Approaches currently available are limited in terms of selectivity and simplicity. In this paper, a highly sensitive organic field‐effect transistor (OFET) using the cyclopentadithiophene‐benzothiadiazole (CDT‐BTZ) copolymers as a semiconductor is presented for easy and selective detection of different families of structural isomers, as well as between different isomers within each family. High accuracy discrimination is achieved over a range of concentrations using only a single sensing parameter derived from the OFET characteristic transfer curve. As a reference, other homopolymer‐ and donor–acceptor copolymer‐based OFET sensors are examined but do not have an equivalent sensing performance to that of the CDT‐BTZ‐based OFETs. Investigating the link between isomer absorption and swelling, supramolecular order and energy levels of the active layer reveals a unique effect of each isomer on the energy bands of the semiconducting polymer.     

Printed,Flexible, Organic Nano‐Floating‐Gate Memory: Effects of Metal Nanoparticles and Blocking Dielectrics on Memory Characteristics

The effects of using a blocking dielectric layer and metal nanoparticles (NPs) as charge‐trapping sites on the characteristics of organic nano‐floating‐gate memory (NFGM) devices are investigated. High‐performance NFGM devices are fabricated using the n‐type polymer semiconductor, poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2)), and various metal NPs. These NPs are embedded within bilayers of various polymer dielectrics (polystyrene (PS)/poly(4‐vinyl phenol) (PVP) and PS/poly(methyl methacrylate) (PMMA)). The P(NDI2OD‐T2) organic field‐effect transistor (OFET)‐based NFGM devices exhibit high electron mobilities (0.4–0.5 cm² V^?1 s^?1) and reliable non‐volatile memory characteristics, which include a wide memory window (≈52 V), a high on/off‐current ratio (I_on/I_off ≈ 10⁵), and a long extrapolated retention time (>10⁷ s), depending on the choice of the blocking dielectric (PVP or PMMA) and the metal (Au, Ag, Cu, or Al) NPs. The best memory characteristics are achieved in the ones fabricated using PMMA and Au or Ag NPs. The NFGM devices with PMMA and spatially well‐distributed Cu NPs show quasi‐permanent retention characteristics. An inkjet‐printed flexible P(NDI2OD‐T2) 256‐bit transistor memory array (16 × 16 transistors) with Au‐NPs on a polyethylene naphthalate substrate is also fabricated. These memory devices in array exhibit a high I_on/I_off (≈10^{4 ± 0.85}), wide memory window (≈43.5 V ± 8.3 V), and a high degree of reliability.     

Flexible air-stable three-dimensional polymer field-effect transistors with high output current density

Flexible air-stable short-channel polymer organic field-effect transistor (OFET) arrays with high saturated output current density are demonstrated by utilizing a novel solution-processed naphthobisthiadiazole (NTz) based donor–acceptor semiconducting polymer (PNTz4T) and designing a three-dimensional vertical channel structure with an extremely large ratio of channel width to channel length. The saturated mean field-effect mobility of 0.16 cm²/V s of the short-channel polymer devices remains over one month resulting in air-stable OFET arrays with high on/off ratio over 10⁶ and powerful current–density exceeding 0.3 A/cm² under low operation voltage, both of which meet the requirements for such applications as driving organic light-emitting diodes in active-matrix displays.     

Highly Sensitive Chemical‐Vapor Sensor Based on Thin‐Film Organic Field‐Effect Transistors with Benzothiadiazole‐Fused‐Tetrathiafulvalene

The synthesis of a new tetrathiafulvalene derivative with an electron‐withdrawing benzothiadiazole moiety and its use in thin‐film organic field‐effect transistors (OFETs) are reported. Compared to reported OFETs with other TTF derivatives, a high hole mobility up to 0.73 cm² V^?1 s^?1, low off‐current and high on/off ratio up to 10⁵ are demonstrated. In addition, the developed OFETs show fast responsiveness toward chemical vapors of DECP (diethyl chlorophosphate) or POCl₃ which are simulants of phosphate‐based nerve agents. In contrast to previously reported OFET‐based sensors, off‐current is used as the output signal, which increases quickly upon exposure to either DECP or POCl₃ vapors. High sensitivity is demonstrated toward DECP and POCl₃ vapors, with concentrations as low as 10 ppb being detected. These OFETs are also responsive to TNT vapor. The sensing mechanisms for the new type of OFET are discussed.     

High‐Speed Organic Single‐Crystal Transistor Responding to Very High Frequency Band

Although high carrier mobility organic field‐effect transistors (OFETs) are required for high‐speed device applications, improving the carrier mobility alone does not lead to high‐speed operation. Because the cut‐off frequency is determined predominantly by the total resistance and parasitic capacitance of a transistor, it is necessary to miniaturize OFETs while reducing these factors. Depositing a dopant layer only at the metal/semiconductor interface is an effective technique to reduce the contact resistance. However, fine‐patterning techniques for a dopant layer are still challenging especially for a top‐contact solution‐processed OFET geometry because organic semiconductors are vulnerable to chemical damage by solvents. In this work, high‐resolution, damage‐free patterning of a dopant layer is developed to fabricate short‐channel OFETs with a dopant interlayer inserted at the contacts. The fabricated OFETs exhibit high mobility exceeding 10 cm² V^?1 s^?1 together with a reasonably low contact resistance, allowing for high frequency operation at 38 MHz. In addition, a diode‐connected OFET shows a rectifying capability of up to 78 MHz at an applied voltage of 5 V. This shows that an OFET can respond to the very high frequency band, which is beneficial for long‐distance wireless communication.     

Marangoni‐Effect‐Assisted Bar‐Coating Method for High‐Quality Organic Crystals with Compressive and Tensile Strains

Low‐cost solution‐shearing methods are highly desirable for deposition of organic semiconductor crystals over a large area. To enhance the rate of evaporation and deposition, elevated substrate temperature is commonly employed during shearing processes. However, the Marangoni flow induced by a temperature‐dependent surface‐tension gradient near the meniscus line shows negative effects on the deposited crystals and its electrical properties. In the current study, the Marangoni effect to improve the shearing process of 2,7‐dioctyl[1]benzothieno[3,2‐b ][1]benzothiophene for organic field‐effect transistor (OFET) applications is utilized and regulated. By modifying the gradient of surface tension with different combinations of solvents, the mass transport of molecules is much more favorable, which largely enhances the deposition rate, reduces organic crystal thickness, enlarges grain sizes, and improves coverage. The average and highest mobility of OFETs can be increased up to 13.7 and 16 cm² V^?1 s^?1. This method provides a simple deposition approach on a large scale, which allows to further fabricate large‐area circuits, flexible displays, or bioimplantable sensors.     

Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing

In this study, organic field-effect transistors (OFETs) with extended gate structure were fabricated for selective pH sensing applications. Indium tin oxide (ITO) was used as extended gate electrode as well as an active layer for H⁺ sensing. The threshold voltage of the fabricated ion-selective OFET was varied by the changes in the electrochemical potential at the ITO electrode surface upon its exposure to buffer solutions with variable pH values. The sensor showed excellent linearity and a high sensitivity of 57–59 mV/pH in the pH range of 2–12. The selectivity of the ITO sensing layer to H⁺ ions was also investigated by measuring the interfering effect of Ca²⁺ and K⁺ ions in the buffer pH solutions. The results showed that the Ca²⁺ and K⁺ ions weakly interfere with the selective pH sensing of the ITO-extended gate OFET sensor device.     

Ambient‐Stable,Annealing‐Free,and Ambipolar Organic Field‐Effect Transistors Based on Solution‐Processable Poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene) without Long Alkyl Side Chains

An ambipolar conjugated polymer CF₃‐PBTV, poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene), consisting of thienylenevinylene as the donor and trifluoromethyl‐substituted biphenyl as the acceptor has been successfully synthesized. CF₃‐PBTV shows solution‐processability without electrically insulating long alkyl side chains. Grazing incidence X‐ray diffraction results suggest a nearly equal population of flat‐on and end‐on domains in CF₃‐PBTV thin film. The excellent ambipolarity of CF₃‐PBTV is demonstrated by well‐equivalent charge mobilities of 0.065 and 0.078 cm² V^?1 s^?1 for p‐ and n‐channel, respectively. The organic field‐effect transistors (OFET) also shows very high on/off ratio (≈10⁷) which is attributed to the relatively large bandgap and low‐lying highest occupied molecular orbital (HOMO) of CF₃‐PBTV. The OFET performance barely changes after the device is stored in ambient conditions for 90 days. The ambient‐stability is attributed to the enhanced oxidative stability from its low‐lying HOMO and the better moisture resistance from its fluorine contents. The performance of CF₃‐PBTV based OFET is annealing independent. It is noteworthy that the solution‐processable, ambipolar, and thienylenevinylene‐containing conjugated polymer without any long alkyl side chains is reported for the first time. And to the best of our knowledge, it is the first ambient‐stable, annealing‐free OFET with well‐equivalent ambipolarity.     

Synthesis,Characterization, and Field‐Effect Transistor Performance of Thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene Derivatives

The synthesis, characterization, and field‐effect transistor (FET) properties of a new class of thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene derivatives are described. The optical spectra of their films show the presence of stronger interactions between molecules in the solid state. Thermal analyses reveal that the three materials are thermally stable and have no phase transitions at low temperature. The crystal structures are determined, and show π‐stacked structures and intermolecular S···S contacts. These organic materials exhibit p‐type FET behavior with hole mobilities as high as 0.14 cm² V^?1 s^?1 and an on/off current ratio of 10⁶. These results indicate that thieno[3,2‐b]thieno [2′,3′:4,5]thieno[2,3‐d]thiophene, as a linear π‐conjugated system, is an effective building block for developing high‐performance organic semiconductors.     

Humidity‐Tolerant Single‐Stranded DNA‐Functionalized Graphene Probe for Medical Applications of Exhaled Breath Analysis

Highly sensitive and selective chemiresistive sensors based on graphene functionalized by metals and metal oxides have attracted considerable attention in the fields of environmental monitoring and medical assessment because of their ultrasensitive gas detecting performance and cost‐effective fabrication. However, their operation, in terms of detection limit and reliability, is limited in traditional applications because of ambient humidity. Here, the enhanced sensitivity and selectivity of single‐stranded DNA‐functionalized graphene (ssDNA‐FG) sensors to NH₃ and H₂S vapors at high humidity are demonstrated and their sensing mechanism is suggested. It is found that depositing a layer of ssDNA molecules leads to effective modulation of carrier density in graphene, as a negative‐potential gating agent and the formation of an additional ion conduction path for proton hopping in the layer of hydronium ions (H₃O⁺) at high humidity (>80%). Considering that selectively responsive chemical vapors are biomarkers associated with human diseases, the obtained results strongly suggest that ssDNA‐FG sensors can be the key to developing a high‐performance exhaled breath analyzer for diagnosing halitosis and kidney disorder.     

Constructing Na‐Ion Cathodes via Alkali‐Site Substitution

Na‐ion batteries have experienced rapid development over the past decade and received significant attention from the academic and industrial communities. Although a large amount of effort has been made on material innovations, accessible design strategies on peculiar structural chemistry remain elusive. An approach to in situ construction of new Na‐based cathode materials by substitution in alkali sites is proposed to realize long‐term cycling stability and high‐energy density in low‐cost Na‐ion cathodes. A new compound, [K_0.444(1)Na_1.414(1)][Mn_3/4Fe_5/4](CN)₆, is obtained through a rational control of K⁺ content from electrochemical reaction. Results demonstrate that the remaining K⁺ (≈0.444 mol per unit) in the host matrix can stabilize the intrinsic K‐based structure during reversible Na⁺ extraction/insertion process without the structural evolution to the Na‐based structure after cycles. Thereby, the as‐prepared cathode shows the remarkably enhanced structural stability with the capacity retention of >78% after 1800 cycles, and a higher average operation voltage of ≈3.65 V versus Na⁺/Na, directly contrasting the non‐alkali‐site‐substitution cathode materials. This provides new insights into alkali‐site‐substitution constructing advanced Na‐ion cathode materials.     

Conjugated Polyelectrolyte and Aptamer Based Potassium Assay via Single‐ and Two‐Step Fluorescence Energy Transfer with a Tunable Dynamic Detection Range

A new potassium ion detection assay was developed using a dye‐labeled aptamer and conjugated polyelectrolyte (CPE) as a signaling platform via 1‐step and 2‐step fluorescence resonance energy transfer. Guanine‐rich K⁺‐specific aptamers were designed as K⁺ ion recognition species with 6‐carboxyfluorescein (6‐FAM) and 6‐carboxytetramethylrhodamine (6‐TAMRA) at both termini. In the presence of K⁺ ions, the aptamers undergo a conformational change from an unfolded to folded form by forming a G‐quadruplex with K⁺, bringing two dyes in proximity. FRET‐induced 6‐TAMRA emission was proportional to [K⁺] in a range of 22.5 μm –100 mm in water without interference by the presence of excess Na⁺ ions (100 mm ). Upon the addition of CPE, a two‐step FRET process from CPE to 6‐TAMRA via 6‐FAM was enabled, showing an intensified 6‐TAMRA signal with K⁺ ions. The dynamic detection range and limit of detection (LOD) was fine‐tuned from ～millimolar to ～nanomolar concentrations of K⁺ by modulating the signal amplification effect of CPE. The LOD was determined to be ≈3.0 nm . This detection assay also showed high selectivity against other metal ions. This sensing scheme can be extended to the detection of a wide range of target materials by simply modifying the recognition aptamer sequence.     

Ultrasensitive low power-consuming strain sensor based on complementary inverter composed of organic p- and n-channels

The use of low-strain sensors based on complementary inverters for the detection of tensile strain has been verified. Complementary inverter-type gauge circuits are comprised of a strain-sensitive bendable C₂₆H₁₆N₂(heptazole)-based organic field-effect transistor (OFET) and a relatively strain-insensitive N,N′-ditridecyl-perylene-3,4:9,10-tetracarboxylic diimide−C13(PTCDI-C13)-based one, as p- and n-channels, respectively. This study complementary circuit showed a voltage gain of more than 10 and a relatively low static current (below 0.2 nA) at a supplied voltage of 5 V, without strain application. Using the elastic and reversible response to the tensile strain in the heptazole p-channel, the complementary inverter-type gauge circuit enabled us to achieve a high gauge factor of 90% and to measure an extremely low strain level of 0.02% under subnanowatt power dissipation conditions during the strain-sensing operation. This ultrasensitive and low power-consuming strain gauge could be highly beneficial for portable and large-area strain sensors, one of the most critical components of mobile applications.     

Solution-processed flexible nonvolatile organic field-effect transistor memory using polymer electret

Flexible organic field-effect-transistor (OFET) memory is one of the promising candidates for next-generation wearable nonvolatile data storage due to its low price, solution-processability, light-weight, mechanically flexibility, and tunable energy level via molecular tailoring. In this paper, we report flexible nonvolatile OFET memory devices fabricated with solution-processed polystyrene-brush electret and organic semiconductor blends of p-channel 6, 13-bis-(triisopropylsilylethynyl)pentacene (TIPS-PEN) and n-channel poly-{[N,N′-bis(2- octyldodecyl)-naphthalene-1,4,5,8-bis-(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P-(NDI2OD-2T); N2200). Fabricated flexible OFET memory devices exhibited high memory window (30 V) and ON/OFF current ratio (memory ratio) over 10³. Furthermore, we obtained reliable memory ratio (~10³) over retention time of 10⁸ s, 100 times of repeated programming/erasing cycles, and 1000 times of bending tests at a radius of 3 mm.     

High Molar Extinction Coefficient Ion‐Coordinating Ruthenium Sensitizer for Efficient and Stable Mesoscopic Dye‐Sensitized Solar Cells

Ru(4,4‐dicarboxylic acid‐2,2′‐bipyridine) (4,4′‐bis(2‐(4‐(1,4,7,10‐tetraoxyundecyl)phenyl)ethenyl)‐2,2′‐bipyridine) (NCS)₂, a new high molar extinction coefficient ion‐coordinating ruthenium sensitizer was synthesized and characterized using ¹H NMR, Fourier transform IR (FTIR), and UV/vis spectroscopies and cyclic voltammetry. Using this sensitizer in combination with a nonvolatile organic‐solvent‐based electrolyte, we obtain a photovoltaic efficiency of 8.4 % under standard global AM 1.5 sunlight. These devices exhibit excellent stability when subjected to continuous thermal stress at 80 °C or light soaking at 60 °C for 1000 h. An electrochemical impedance spectroscopy study revealed that device stability is maintained by stabilizing the TiO₂/dye/electrolyte and Pt/electrolyte interface during the aging process. The influence of Li⁺ present in the electrolyte on the device photovoltaic parameters was studied, and the FTIR spectral and photovoltage transient study showed that Li⁺ coordinates to the triethyleneoxide methylether side chains on the K60 sensitizer molecules.