Charge‐Carrier Balance and Color Purity in Polyfluorene Polymer Blends for Blue Light‐Emitting Diodes

A study of an efficient blue light‐emitting diode based on a fluorescent aryl polyfluorene (aryl‐F8) homopolymer in an inverted device architecture is presented, with ZnO and MoO₃ as electron‐ and hole‐injecting electrodes, respectively. Charge‐carrier balance and color purity in these structures are achieved by incorporating poly(9,9‐dioctylfluorene‐co‐N‐(4‐butylphenyl)‐diphenylamine (TFB) into aryl‐F8. TFB is known to be a hole‐transporting material but it is found to act as a hole trap on mixing with aryl‐F8. Luminance efficiency of ≈6 cd A^?1 and external quantum efficiency (EQE) of 3.1% are obtained by adding a small amount (0.5% by weight) of TFB into aryl‐F8. Study of charge injection and transport in the single‐carrier devices shows that the addition of a small fraction of hole traps is necessary for charge‐carrier balance. Optical studies using UV–vis and fluorescence spectroscopic measurements, photoluminescence quantum yield, and fluorescence decay time measurements indicate that TFB does not affect the optical properties of the aryl‐F8, which is the emitting material in these devices. Luminance efficiency of up to ≈11 cd A^?1 and EQE values of 5.7% are achieved in these structures with the aid of improved out‐coupling using index‐matched hemispheres.     

Conjugated Polyelectrolyte Hybridized ZnO Nanoparticles as a Cathode Interfacial Layer for Efficient Polymer Light‐Emitting Diodes

Alkoxy side‐chain tethered polyfluorene conjugated polyelectrolyte (CPE), poly[(9,9‐bis((8‐(3‐methyl‐1‐imidazolium)octyl)‐2,7‐fluorene)‐alt‐(9,9‐bis(2‐(2‐methoxyethoxy)ethyl)‐fluorene)] dibromide (F8imFO₄), is utilized to obtain CPE‐hybridized ZnO nanoparticles (NPs) (CPE:ZnO hybrid NPs). The surface defects of ZnO NPs are passivated through coordination interactions with the oxygen atoms of alkoxy side‐chains and the bromide anions of ionic pendent groups from F8imFO₄ to the oxygen vacancies of ZnO NPs, and thereby the fluorescence quenching at the interface of yellow‐emitting poly(p‐phenylene vinylene)/CPE:ZnO hybrid NPs is significantly reduced at the CPE concentration of 4.5 wt%. Yellow‐emitting polymer light‐emitting diodes (PLEDs) with CPE(4.5 wt%):ZnO hybrid NPs as a cathode interfacial layer show the highest device efficiencies of 11.7 cd A^?1 at 5.2 V and 8.6 lm W^?1 at 3.8 V compared to the ZnO NP only (4.8 cd A^?1 at 7 V and 2.2 lm W^?1 at 6.6 V) or CPE only (7.3 cd A^?1 at 5.2 V and 4.9 lm W^?1 at 4.2 V) devices. The results suggest here that the CPE:ZnO hybrid NPs has a great potential to improve the device performance of organic electronics.     

Bright Blue Solution Processed Triple‐Layer Polymer Light‐Emitting Diodes Realized by Thermal Layer Stabilization and Orthogonal Solvents

The realization of fully solution processed multilayer polymer light‐emitting diodes (PLEDs) constitutes the pivotal point to push PLED technology to its full potential. Herein, a fully solution processed triple‐layer PLED realized by combining two different deposition strategies is presented. The approach allows a successive deposition of more than two polymeric layers without extensively redissolving already present layers. For that purpose, a poly(9,9‐dioctyl‐fluorene‐co‐N‐(4‐butylphenyl)‐diphenylamine) (TFB) layer is stabilized by a hard‐bake process as hole transport layer on top of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). As emitting layer, a deep blue emitting pyrene‐triphenylamine copolymer is deposited from toluene solution. To complete the device assembly 9,9‐bis(3‐(5′,6′‐bis(4‐(polyethylene glycol)phenyl)‐[1,1′:4′,1″‐terphenyl]‐2′‐yl)propyl)‐9′,9′‐dioctyl‐2,7‐polyfluorene (PEGPF), a novel polyfluorene‐type polymer with polar sidechains, which acts as the electron transport layer, is deposited from methanol in an orthogonal solvent approach. Atomic force microscopy verifies that all deposited layers stay perfectly intact with respect to morphology and layer thickness upon multiple solvent treatments. Photoelectron spectroscopy reveals that the offsets of the respective frontier energy levels at the individual polymer interfaces lead to a charge carrier confinement in the emitting layer, thus enhancing the exciton formation probability in the device stack. The solution processed PLED‐stack exhibits bright blue light emission with a maximum luminance of 16 540 cd m^?2 and a maximum device efficiency of 1.42 cd A^?1, which denotes a five‐fold increase compared to corresponding single‐layer devices and demonstrates the potential of the presented concept.     

Surface‐Directed Phase Separation of Conjugated Polymer Blends for Efficient Light‐Emitting Diodes

The ability to control organic‐organic interfaces in conjugated polymer blends is critical for further device improvement. Here, we control the phase separation in blends of poly(9,9‐di‐n‐octylfluorene‐alt‐benzothiadiazole) (F8BT) and poly(9,9‐di‐n‐octylfluorene‐alt‐(1,4‐phenylene‐((4‐sec‐butylphenyl)imino)‐1,4‐phenylene) (TFB) via chemical modification of the substrate by microcontact printing of octenyltrichlorosilane molecules. The lateral phase‐separated structures in the blend film closely replicate the underlying micrometer‐scale chemical pattern. We found nanometer‐scale vertical segregation of the polymers within both lateral domains, with regions closer to the substrate being substantially pure phases of either polymer. Such phase separation has important implications for the performance of light‐emitting diodes fabricated using these patterned blend films. In the absence of a continuous TFB wetting layer at the substrate interface, as typically formed in spin‐coated blend films, charge carrier injection is confined in the well‐defined TFB‐rich domains. This confinement leads to high electroluminescence efficiency, whereas the overall reduction in the roughness of the patterned blend film results in slower decay of device efficiency at high voltages. In addition, the amount of surface out‐coupling of light in the forward direction observed in these blend devices is found to be strongly correlated to the distribution of periodicity of the phase‐separated structures in the active layer.     

Organic Light‐Emitting Diodes Based on Poly(9,9‐dioctylfluorene‐co‐bithiophene) (F8T2)

A study of the optical properties of poly(9,9‐dioctylfluorene‐co‐bithiophene) (F8T2) is reported, identifying this polymer as one that possesses a desirable combination of charge transport and light emission properties. The optical and morphological properties of a series of polymer blends with F8T2 dispersed in poly(9,9‐dioctylfluorene) (PFO) are described and almost pure‐green emission from light emitting diodes (LEDs) based thereon is demonstrated. High luminance green electroluminescence from LEDs using only a thin film of F8T2 for emission is also reported. The latter demonstration for a polymer previously primarily of interest for effective charge transport constitutes an important step in the development of emissive materials for applications where a union of efficient light emission and effective charge transport is required.     

Energy Landscape of Vertically Anisotropic Polymer Blend Films toward Highly Efficient Polymer Light‐Emitting Diodes (PLEDs)

A blend of two hole‐dominant polymers is created and used as the light emissive layer in light‐emitting diodes to achieve high luminous efficiency up to 22 cd A^?1. The polymer blend F8_1?xSY_x is based on poly(9,9‐dioctylfluorene) (F8) and poly(para‐phenylene vinylene) derivative superyellow (SY). The blend system exhibits a preferential vertical concentration distribution. The resulting energy landscape modifies the overall charge transport behavior of the blend emissive layer. The large difference between the highest unoccupied molecular orbital levels of F8 (5.8 eV) and SY (5.3 eV) introduces hole traps at SY sites within the F8 polymer matrix. This slows down the hole mobility and facilitates a balance between the transport behavior of both the charge carriers. The balance due to such energy landscape facilitates efficient formation of excitons within the emission zone well away from the cathode and minimizes the surface quenching effects. By bringing the light‐emission zone in the middle of the F8_1?xSY_x film, the bulk of the film is exploited for the light emission. Due to the charge trapping nature of SY molecules in F8 matrix and pushing the emission zone in the center, the radiative recombination rate also increases, resulting in excellent device performance.     

Organic and Inorganic Blocking Layers for Solution‐Processed Colloidal PbSe Nanocrystal Infrared Photodetectors

A PbSe solution‐processed nanocrystal‐based infrared photodetector incorporating carrier blocking layers is demonstrated, and significant reduction of dark current is achieved. Detectivity values close to 10¹² Jones are achieved by using poly[(9,9′‐dioctylfluorenyl‐2,7‐diyl)‐co‐(4,4′‐(N‐(4‐sec‐butyl))diphenylamine)] (TFB) and ZnO nanocrystals (NC) as the electron blocker and hole blocker, respectively. An improvement in lifetime is also observed in the devices with the ZnO NCs hole blocking layer.     

Interface Modification to Improve Hole‐Injection Properties in Organic Electronic Devices

The performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole‐conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin‐coating poly(9,9‐dioctyl‐fluorene‐co‐N‐ (4‐butylphenyl)‐diphenylamine) (TFB) on top of the poly(3,4‐ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT:PSS. Changes in the hole‐injection energy barriers, bulk charge‐transport properties, and current–voltage characteristics observed in a representative PFO‐based (PFO: poly(9,9‐dioctylfluorene)) diode suggest that conditioning of PEDOT:PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole‐injection properties of organic electronic devices.     

Efficient Conjugated‐Polymer Optoelectronic Devices Fabricated by Thin‐Film Transfer‐Printing Technique

The fabrication of functional multilayered conjugated‐polymer structures with well‐defined organic‐organic interfaces for optoelectronic‐device applications is constrained by the common solubility of many polymers in most organic solvents. Here, we report a simple, low‐cost, large‐area transfer‐printing technique for the deposition and patterning of conjugated‐polymer thin films. This method utilises a planar poly(dimethylsiloxane) (PDMS) stamp, along with a water‐soluble sacrificial layer, to pick up an organic thin film (～20 nm to 1 µm) from a substrate and subsequently deliver this film to a target substrate. We demonstrate the versatility of this transfer‐printing technique and its applicability to optoelectronic devices by fabricating bilayer structures of poly(9,9‐di‐n‐octylfluorene‐alt‐(1,4‐phenylene‐((4‐sec‐butylphenyl)imino)‐1,4‐phenylene))/poly(9,9‐di‐n‐octylfluorene‐alt‐benzothiadiazole) (TFB/F8BT) and poly(3‐hexylthiophene)/methanofullerene([6,6]‐phenyl C₆₁ butyric acid methyl ester) (P3HT/PCBM), and incorporating them into light‐emitting diodes (LEDs) and photovoltaic (PV) cells, respectively. For both types of device, bilayer devices fabricated with this transfer‐printing technique show equal, if not superior, performance to either blend devices or bilayer devices fabricated by other techniques. This indicates well‐controlled organic‐organic interfaces achieved by the transfer‐printing technique. Furthermore, this transfer‐printing technique allows us to study the nature of the excited states and the transport of charge carriers across well‐defined organic interfaces, which are of great importance to organic electronics.     

Stable and Efficient White Electroluminescent Devices Based on a Single Emitting Layer of Polymer Blends

An efficient orange‐light‐emitting polymer (PFTO‐BSeD5) has been developed through the incorporation of low‐bandgap benzoselenadiazole (BSeD) moieties into the backbone of a blue‐light‐emitting polyfluorene copolymer (PFTO poly{[9,9‐bis(4‐(5‐(4‐tert‐butylphenyl)‐[1,3,4]‐oxadiazol‐2‐yl)phenyl)‐9′,9′‐di‐n‐octyl‐[2,2′]‐bifluoren‐7,7′‐diyl]‐stat‐[9,9‐bis(4‐(N,N‐di(4‐n‐butylphenyl)amino)phenyl)‐9′,9′‐di‐n‐octyl‐[2,2′]‐bifluoren‐7,7′‐diyl]}) that contains hole‐transporting triphenylamine and electron‐transporting oxadiazole pendent groups. A polymer light‐emitting device based on this copolymer exhibits a strong, bright‐orange emission with Commission Internationale de L'Eclairage (CIE) color coordinates (0.45,0.52). The maximum brightness is 13 716 cd m^–2 and the maximum luminance efficiency is 5.53 cd A^–1. The use of blends of PFTO‐BSeD5 in PFTO leads to efficient and stable white‐light‐emitting diodes—at a doping concentration of 9 wt %, the device reaches its maximum external quantum efficiency of 1.64 % (4.08 cd A^–1). The emission color remains almost unchanged under different bias conditions: the CIE coordinates are (0.32,0.33) at 11.0 V (2.54 mA cm^–2, 102 cd m^–2) and (0.31,0.33) at 21.0 V (281 mA cm^–2, 7328 cd m^–2). These values are very close to the ideal CIE chromaticity coordinates for a pure white color (0.33,0.33).     

Hydrothermal Growth: Polymer‐Templated Hydrothermal Growth of Vertically Aligned Single‐Crystal ZnO Nanorods and Morphological Transformations Using Structural Polarity (Adv. Funct. Mater. 18/2010)

Position‐configurable, vertical, single‐crystalline ZnO nanorod arrays are fabricated via a polymer‐templated hydrothermal growth method at a low temperature of 93 °C. A sol‐gel processed dense c‐oriented ZnO seed layer film is employed to grow nanorods along the c‐axis direction [0001] regardless of any substrate crystal mismatches. Here, one‐beam laser‐interference lithography is utilized to fabricate nanoscale holes over an entire 2‐in. wafer during the preparation of the polymer template. As such, vertically aligned ZnO nanorods can be grown from the seed layer exposed at the bottom of each hole. Furthermore, morphological transformations of the ZnO nanorods into pencil‐like, needle‐like, tubular, tree‐like, and spherical shapes are obtained by controlling the growth conditions and utilizing the structural polarity of the ZnO nanorods.     

Polymer‐Templated Hydrothermal Growth of Vertically Aligned Single‐Crystal ZnO Nanorods and Morphological Transformations Using Structural Polarity

Position‐configurable, vertical, single‐crystalline ZnO nanorod arrays are fabricated via a polymer‐templated hydrothermal growth method at a low temperature of 93 °C. A sol‐gel processed dense c‐oriented ZnO seed layer film is employed to grow nanorods along the c‐axis direction [0001] regardless of any substrate crystal mismatches. Here, one‐beam laser‐interference lithography is utilized to fabricate nanoscale holes over an entire 2‐in. wafer during the preparation of the polymer template. As such, vertically aligned ZnO nanorods can be grown from the seed layer exposed at the bottom of each hole. Furthermore, morphological transformations of the ZnO nanorods into pencil‐like, needle‐like, tubular, tree‐like, and spherical shapes are obtained by controlling the growth conditions and utilizing the structural polarity of the ZnO nanorods.     

High‐Efficiency and Color Stable Blue‐Light‐Emitting Polymers and Devices

Novel fluorene‐based blue‐light‐emitting copolymers with an ultraviolet‐blue‐light (UV‐blue‐light) emitting host and a blue‐light emitting component, 4‐N,N‐diphenylaminostilbene (DPS) have been designed and synthesized by using the palladium‐ catalyzed Suzuki coupling reaction. It was found that both copolymers poly [2,7‐(9,9‐dioctylfluorene)‐alt‐1,3‐(5‐carbazolphenylene)] (PFCz) DPS1 and PFCz‐DPS1‐OXD show pure blue‐light emission even with only 1 % DPS units because of the efficient energy transfer from the UV‐blue‐light emitting PFCz segments to the blue‐light‐emitting DPS units. Moreover, because of the efficient energy transfer/charge trapping in these copolymers, PFCz‐DPS1 and PFCz‐DPS1‐OXD show excellent device performance with a very stable pure blue‐light emission. By using a neutral surfactant poly[9,9‐bis(6'‐(diethanolamino)hexyl)‐fluorene] (PFN‐OH) as the electron injection layer, the device based on PFCz‐DPS1‐OXD5 with the configuration of ITO/PEDOT:PSS/PVK/polymer/PFN‐OH/Al showed a maximum quantum efficiency of 2.83 % and a maximum luminous efficiency of 2.50 cd A^–1. Its CIE 1931 chromaticity coordinates of (0.156, 0.080) match very well with the NTSC standard blue pixel coordinates of (0.14, 0.08). These results indicate that this kind of dopant/host copolymer could be a promising candidate for blue‐light‐emitting polymers with high efficiency, good color purity, and excellent color stability.     

Barium Hydroxide as an Interlayer Between Zinc Oxide and a Luminescent Conjugated Polymer for Light‐Emitting Diodes

A study of hybrid light‐emitting diodes (HyLEDs) fabricated with and without solution‐processible Cs₂CO₃ and Ba(OH)₂ inorganic interlayers is presented. The interlayers are deposited between a zinc oxide electron‐injection layer and a fluorescent emissive polymer poly(9‐dioctyl fluorine–alt‐benzothiadiazole) (F8BT) layer, with a thermally evaporated MoO₃/Au layer used as top anode contact. In comparison to Cs₂CO₃, the Ba(OH)₂ interlayer shows improved charge carrier balance in bipolar devices and reduced exciton quenching in photoluminance studies at the ZnO/Ba(OH)₂/F8BT interface compared to the Cs₂CO₃ interlayer. A luminance efficiency of ≈28 cd A^?1 (external quantum efficiency (EQE) ≈ 9%) is achieved for ≈1.2 μm thick single F8BT layer based HyLEDs. Enhanced out‐coupling with the aid of a hemispherical lens allows further efficiency improvement by a factor of 1.7, increasing the luminance efficiency to ≈47cd A^?1, corresponding to an EQE of 15%. The photovoltaic response of these structures is also studied to gain an insight into the effects of interfacial properties on the photoinduced charge generation and back‐recombination, which reveal that Ba(OH)₂ acts as better hole blocking layer than the Cs₂CO₃ interlayer.     

Optimization of Orange‐Emitting Electrophosphorescent Copolymers for Organic Light‐Emitting Diodes

Orange‐emitting phosphorescent copolymers containing iridium complexes and bis(carbazolyl)fluorene groups in their side chains are employed as the emissive layer in multilayer organic light‐emitting diodes (OLEDs). The efficiency of the OLED devices is optimized by varying characteristics of the copolymers: the molecular weight, the iridium loading level, and the nature and length of the linker between the side chains and the polymer backbone. A maximum efficiency of 4.9 ± 0.4%, 8.8 ± 0.7 cd A⁻¹ at 100 cd m⁻² is achieved with an optimized copolymer.     

Amino N‐Oxide Functionalized Conjugated Polymers and their Amino‐Functionalized Precursors: New Cathode Interlayers for High‐Performance Optoelectronic Devices

A series of amino N‐oxide functionalized polyfluorene homopolymers and copolymers (PNOs) are synthesized by oxidizing their amino functionalized precursor polymers (PNs) with hydrogen peroxide. Excellent solubility in polar solvents and good electron injection from high work‐function metals make PNOs good candidates for interfacial modification of solution processed multilayer polymer light‐emitting diodes (PLEDs) and polymer solar cells (PSCs). Both PNOs and PNs are used as cathode interlayers in PLEDs and PSCs. It is found that the resulting devices show much better performance than devices based on a bare Al cathode. The effect of side chain and main chain variations on the device performance is investigated. PNOs/Al cathode devices exhibit better performance than PNs/Al cathode devices. Moreover, devices incorporating polymers with para‐linkage of pyridinyl moieties exhibit better performance than those using polymers with meta‐linked counterparts. With a poly[(2,7‐(9,9‐bis(6‐(N,N‐diethylamino)‐hexyl N‐oxide)fluorene))‐alt‐(2,5‐pyridinyl)] (PF6NO25Py) cathode interlayer, the resulting device exhibits a luminance efficiency of 16.9 cd A^?1 and a power conversion efficiency of 6.9% for PLEDs and PSCs, respectively. These results indicate that PNOs are promising new cathode interlayers for modifying a range of optoelectronic devices.     

Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays

Reports on electroluminescence (EL) in solid-state, nanomaterial-based devices emitting in the lower wavelength range of the visible spectrum are limited, and the emission stability of these devices is rarely reported. We have fabricated light-emitting devices (LEDs) based on integration of n-ZnO nanorods and p-GaN films, which emit in the violet to near-ultraviolet (NUV) region. We also present data on the stability of EL in fabricated devices. Vertical arrays on ZnO nanorods, with estimated ZnO nanorod density ~10⁸ cm⁻², were grown on p-GaN films with typical length of ~4 μm and width of ~120 nm. The NUV LEDs show low turn-on voltage (~3.0 V), small reverse saturation current (~10 μA), and more than two orders of magnitude rectification ratio, all of which indicates a good-quality p–n junction at the p-GaN/n-ZnO nanorod interface. The EL spectra of LEDs present an emission band centered at ~403 nm. Gaussian fitting of the EL peak revealed three emission peaks at 378 nm, 405 nm, and 431 nm with dominant emission in the NUV region. Significantly, the fabricated NUV LEDs present stable and repeatable EL characteristics, as revealed by bias-stress stability tests. The good electrical properties and stable EL performance make these nanostructure-based NUV LEDs potential candidates for mass production of next-generation lighting devices.     

Downscaling and Charge Transport in Nanostructured Ferroelectric Memory Diodes Fabricated by Solution Micromolding

Ferroelectric polymer memory diodes are interface devices where charge injection into the organic semiconductor is controlled by the stray electric field of the ferroelectric polymer. Key to high current density and current modulation is the areal density of well‐defined interfaces. Here, bistable diodes are fabricated by using the soft lithography method solution micromolding. First, the semiconducting polymer poly(9,9‐dioctylfluorene) is patterned into linear gratings. Subsequently, bilinear arrays are obtained by backfilling with the ferroelectric polymer poly(vinylidenefluoride‐co‐trifluoroethylene). The lateral feature size is scaled down from 2 μm to 500 nm. Comprising memory diodes show rectifying J–V characteristics with an On‐current density larger than 10³ A m^?2 and an On/Off current ratio exceeding 10³. The charge transport is explained by 2D numerical simulations. Since the dependence of polarization on electric field is explicitly taken into account, entire J–V characteristics can be quantitatively described. The simulations reveal that rectifying J–V characteristics are inherently related to the concave shape of the patterned ferroelectric polymer. It is argued that the exponential increase in current density with decreasing feature size can be due to confinement of the semiconductor. High On‐current density combined with downscaling, rectification, and simple fabrication yield new opportunities for low‐cost integration of high‐density solution‐processed memories.     

Efficient polymer light-emitting diodes with ZnO nanoparticles and interpretation of observed sub-bandgap turn-on phenomenon

Low-temperature liquid-phase synthesized ZnO nanoparticles (NPs) are used to realize highly-efficient polymer light-emitting diodes (PLEDs) containing a poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) emissive layer. It is shown that a 77-nm-thick ZnO electron transport layer (ETL) increases the maximum luminance and current efficiency of the PLED from ∼450 to ∼13,100 cd/m² and 0.55–4.7 cd/A, respectively. In addition, the ZnO layer shifts the peak in the electroluminescence (EL) spectrum from ∼535 nm for a PLED with a CsN₃ layer or no NP layer to ∼585 nm. After ruling out the possibility of ZnO-defect-related emissions and micro-cavity or interference effects, it is argued that the sub-bandgap turn-on behavior of the PLED with a ZnO ETL is the result of emission zone transition and enhanced hole injection rate near the anode, based on the trap-filled space-charge limited conduction (SCLC) phenomenon in the current density-voltage curves and the current-dependent EL spectra.     

Polyethylene Imine as an Ideal Interlayer for Highly Efficient Inverted Polymer Light‐Emitting Diodes

Electron‐injecting interlayers (ILs) which are stable in air, inject electrons efficiently, block holes, and block quenching of excitons, are very important to realize efficient inverted polymer light‐emitting diodes (IPLEDs). Two air‐stable polymer electron‐injecting interlayers (ILs), branched polyethyleneimine (PEI) and polyethyleneimine ethoxylated (PEIE) for use in IPLEDs are introduced, and the roles of the ILs in IPLEDs comparing these with a conventional Cs₂CO₃ IL are elucidated. These polymer ILs can reduce the electron injection barrier between ZnO and emitting layer by decreasing the work function (WF) of underlying ZnO, thereby effectively facilitating electron injection into the emitting layer. WF of ZnO covered by PEI is found to be lower than that covered by PEIE due to higher [N⁺]/[C] ratio of PEI. Furthermore, they can block the quenching of excitons and increase the luminous efficiency of devices. Thus, IPLEDs with PEI IL of optimum thickness (8 nm) show current efficiency (13.5 cd A^–1), which is dramatically higher than that of IPLEDs with a Cs₂CO₃ IL (8 cd A^‐1).