多孔硅新的表面处理技术

对多孔硅施加阳极氧化表面处理技术,可有效解决多孔硅干燥时出现龟裂及坍塌,破坏原有多孔硅的形貌和本质的问题.阳极氧化表面处理技术就是使用少量的负离子作用于多孔硅表面,满足SI分子化合价的需要,消除悬空键,促使多孔硅表面性能稳定,避免结构重组产生分子间的不均匀内应力,从而获得性能稳定、可靠、在空气中可以长期干燥保存的多孔硅.     

多孔硅微结构与场发射性能研究

采用阳极氧化及阴极还原表面处理技术制备性能稳定的纳米多孔硅薄膜.用原子力显微镜(AFM)表征多孔硅的表面形貌,用扫描电子显微镜(SEM)表征多孔硅的横截面结构.采用场发射测试装置研究了阳极氧化腐蚀时间及等离子表面处理对多孔硅场发射性能影响.结果表明,阳极氧化腐蚀时间越长,所得多孔硅场发射性能越好,相对应的开启电压越低,电流密度越大;等离子处理可有效提高场发射性能,等离子处理后的多孔硅薄膜作为阴极发射材料具有极大的潜能.     

多孔硅的干燥方法

研究了多孔硅的阴极还原表面处理技术,通过该技术获得了表面平滑度良好、稳定度高、抗压强度高和耐高温性能好且在空气中可以长期干燥保存的多孔硅样品.在其表面上可以进行光刻、镀金等工艺,因此,可应用于制作器件甚至电路集成     

多孔硅的干燥方法

研究了多孔硅的阴极还原表面处理技术,通过该技术获得了表面平滑度良好、稳定度高、抗压强度高和耐高温性能好且在空气中可以长期干燥保存的多孔硅样品.在其表面上可以进行光刻、镀金等工艺,因此,可应用于制作器件甚至电路集成.     

多孔硅制备工艺的研究

多孔硅的发光性能与其制备工艺密切相关，本文着重讨论了阳极氧化技术、表面再处理、硅衬底的电学性质等因素对多孔硅质量的影响，给出了合适的工艺条件。     

多孔硅的氢化、氧化与光致发光

对于刚阳极氧化完的，阳极氧化后紧接着在Ｈ２Ｏ２中光照处理的及长期存放（１０个月）的三种多孔硅样品进行了持续激光照射，不断监视它们的光致发光（ＰＬ）与富利埃变换红外（ＦＴＩＲ）吸收光谱，并在最后对它们作了Ｘ射线光电子能谱（ＸＰＳ）测量，以确定它们所含氧化硅的情况．得出如下几条结论：（１）氢对多孔硅表面的钝化是不稳定的．（２）Ｓｉ—Ｈ键不是发光所必须的．（３）氧对多孔硅表面的钝化是稳定的，纳米硅周围氧化层的存在及其特性对于稳定的多孔硅可见光发射是至关重要的．对激光照射下多孔硅发光的退化提出了新的解释．     

多孔硅的光致发光谱

本文介绍了用电化学腐蚀的阳极氧化工艺，在硅衬底上制备多孔硅（ＰＳ）薄膜，实验测定了多孔硅薄膜的光致发光谱（ＰＬ），发现光致发光谱峰值波长随阳极氧化时间、ＨＦ浸泡时间或置于空气中自然氧化时间增加而向短方向移动（“蓝移”）．文章用量子限制效应（ＱＣＥ）理论解释了上述实验结果，并提出了在多孔硅发光机制中还存在表面态及实物质在发光中的作用。     

适用于高品质射频集成电感的多孔硅新型衬底制备技术

提出了背向选区腐蚀生长多孔硅的集成电感衬底结构．ASITIC模拟证明，该新型衬底结构的集成电感在高频下仍具有较高的品质因子．采用此工艺，在固定腐蚀液配比的条件下，变化电流密度和阳极氧化时间,制备出了高质量的厚膜多孔硅，并测量了多孔硅的生长厚度、孔径大小和表面形貌，得出了多孔硅生长速率随阳极氧化时间和电流密度的变化关系，为背向选区腐蚀工艺制备高品质硅基集成电感奠定了理论和实验基础．     

电化学阳极氧化制备多孔硅及其发光性能研究

利用电化学阳极氧化法,通过控制电流密度和电解液的成分,在p型(100)硅衬底上制备了大孔的多孔硅结构,利用X射线衍射仪、扫描电子显微镜和紫外荧光光度计研究了不同条件下制备的多孔硅样品的行貌特征、结构和发光性能。在此基础上进一步考察了对多孔硅样品进行氢氟酸浸泡刻蚀和阴极氢饱和处理对其发光性能的影响。讨论了后处理对多孔硅发光性能影响的机理。     

多孔硅的微观结构及其氧化特性

采用ＴＥＭ技术研究了多孔硅微观结构．结果表明：当衬底材料为中等偏高掺杂（０．０３２Ω·ｃｍ）时，多孔硅具有两种不同类型的微观结构，它们的形成和阳极氧化反应电流密度有关．修正了Ｂｅａｌｅ关于多孔硅微观结构的形成模型．采用ＸＰＳ、ＩＲＳ和击穿电压测量，研究了多孔氧化硅的特性，发现多孔硅在低温下（７５０℃）的氧化特性，除了和多孔度有关外，和多孔硅的微观结构以及氧化前的热处理温度有关．     

形成前处理对提高铝箔比容的影响

阳极氧化膜是电解电容器的工作介质，其质量的优劣直接影响着铝电解电容器的性能。若在形成前将腐蚀箔在７５℃左右的Ａ溶液（〔Ａ〕≈０．２ｍｏｌ／Ｌ）中浸泡约１０ｍｉｎ，然后在５７０℃左右热处理３ｈ，阳极氧化膜的结构与性能将得到改善，铝箔比容可提高２５％～５０％，而形成电能降低３０％～５０％，从而可有效提高形成效率。     

The modification of silver anode by an organic solvent (tetrahydrofuran) for top-emissive polymer light-emitting diodes

An organic solvent, tetrahydrofuran (THF), was employed to modify the Ag anode of a top-emissive polymer light-emitting diode (T-PLED) for improving the hole injection capability and the performance of a T-PLED device. The X-ray photoelectron spectroscope analysis shows that the THF molecules were chemically adsorbed on the Ag surface, forming oxygen-rich species by substrate-catalyzed decomposition. The THF-modification were found to enhance the hole injection on the Ag anode, decrease the threshold voltage, and increase the light intensity and luminous efficiency of a T-PLED device, attributing mainly to the increase of work function of the Ag anode.     

Lithiophilic and Antioxidative Copper Current Collectors for Highly Stable Lithium Metal Batteries

Designing copper (Cu) current collectors is a convenient way to stabilize lithium (Li) metal anodes. However, Cu current collectors and their derived Li/Cu anodes still face several obstacles, including lithiophobic and oxidizable Cu surface, cumbersome anode fabrication process, and low Li utilization. Here, a formate-treatment strategy is presented to reconstruct Cu current collectors with a passivation layer covered Cu(110) surface. This method can easily be generalized to increase the lithiophilicity and oxidation resistibility of Cu current collectors. Using the formate-treated Cu nanowire network as an anode current collector, the full cell consisting of a LiFePO₄ cathode and Li/Cu anode with a low negative/positive capacity ratio delivers an excellent cycling performance with 74.8% capacity retention after 1000 cycles at 1 C. In addition, a concept of an upper current collector is introduced to simplify the manufacturing procedure of Li/Cu anodes. This work provides new insights into the design and construction of high-performance Li/Cu anodes.     

Al/SiO_2/Si表面Al_2O_3纳米图形的AFM阳极氧化制备方法

采用AFM阳极氧化方法,在控制AFM探针尖端电压和扫描方式的条件下,在Al/SiO2/Si表面制备了Al2O3纳米图形,图形最小尺寸为70nm.研究了表面吸附水层存在下AFM阳极氧化机理.实验结果表明AFM阳极氧化是制备金属氧化物半导体纳米器件的较好方法     

多孔硅光电导特性研究

多孔硅材料具有较强的可见光光电导效应，本文采用阳极氧化工艺制作了Al/PS/Si/Al的结构样品，给出了由不同工艺制备的样品的光电导响应曲线及其峰值。结果表明：多孔硅禁带宽度在1.9eV左右，大于Si的禁带宽度1.12eV，这与多孔硅的发光现象和能带展宽理论相一致。     

A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

This paper presents a new cleaning process using boron-doped diamond(BDD) film anode electrochemical oxidation for metallic contaminants on polished silicon wafer surfaces.The BDD film anode electrochemical oxidation can efficiently prepare pyrophosphate peroxide,pyrophosphate peroxide can oxidize organic contaminants,and pyrophosphate peroxide is deoxidized into pyrophosphate.Pyrophosphate,a good complexing agent,can form a metal complex,which is a structure consisting of a copper ion,bonded to a surrou...     

Zirconium oxide post treated tin doped TiO2 for dye sensitized solar cells

Sn doped TiO₂ nanorods with 0.1, 0.25%, 0.5% and 1% dopant compositions were grown by sol-gel and hydrothermal method. Synthesized Sn doped TiO₂ nanorods were post treated with Zr and HNO₃ and used as photo anode in DSSC with Ru dye and dye extracted from leaves of Camellia sinensis. The PCE of 1% Sn doped TiO₂ photo anode sensitized with Ru dye comparatively showed a better conversion efficiency of 4.96%. 1% Sn doped TiO₂ nanorods post treated and acid treated with Zr and HNO₃ sensitized with leaves of Camellia sinensis showed better PCE than untreated Sn doped TiO₂ photo anode. Increasing the oxygen vacancy by raising the dopant composition with low difference between successive levels improves the photocatalytic performance of the cell. The post treatment of zirconia and HNO₃ treatment enhances the photovoltaic parameters toward better performance of the cell. The synergistic effect of introduction of surface defects due to doping, surface modification by post treatment, retarding electron–hole recombination and protonation of the surface with acid treatment enhanced the efficiency of 1% Sn doped TiO₂ nanorods and it can be considered as a potential photo anode for DSSC.     

BDD 电化学结合表面活性剂的新型清洗方法

提出了一种新型抛光后的清洗方法,采用掺硼金刚石膜作阳极的电化学方法制备出氧化液,用其去除表面有机污染物,同时配合使用非离子表面活性剂去除表面固体颗粒.用金刚石膜电化学制备出氧化液,克服了单纯电化学氧化生成的强氧化性羟基自由基不稳定和寿命短等缺点,实现氧化能力持久保持.表面活性剂能有效地去除表面颗粒,清洗后Si片上会有残留物,氧化液可以将残留物去除.通过实验对比发现,这种新颖的清洗方法在颗粒和有机物去除上有很好的清洗效果,能够满足微电子工艺的发展需求.     

Rapid thermal oxidation of porous silicon for surface passivation

Rapid thermal oxidation with dry oxygen has been carried out on porous silicon (PS) films formed by electrochemical etching. The purpose of the paper was to investigate the surface passivation capability of the oxidized PS layers and to understand the oxidation mechanism. Rutherford back scattering (RBS) and X-ray photoemission spectroscopy (XPS) analyses confirmed the formation of a stoichiometric quasi-silicon dioxide. Besides, elastic recoil diffusion analysis (ERDA) demonstrated that a high concentration of hydrogen is still present in the PS film even after oxidation. RTO resulted in a good surface passivation effect at high temperature (>1000°C) as seen by internal quantum efficiency analysis. However, lifetime in bulk silicon is affected by the RTO process.     

新型抛光后晶片表面金属离子清洗工艺

本文提出了一种新型的利用金刚石膜电极电化学氧化进行抛光后晶片金属离子污染的清洗方法。金刚石膜电极电化学氧化,可以制备氧化性强的过氧焦磷酸盐,过氧焦磷酸盐可以有效的氧化表面有机物,同时过氧焦磷酸盐被还原成的焦磷酸盐具有很强的配合力,它能与铜等金属离子络合。将三块晶片在0.01mol/L的CuSO4溶液中进行金属离子污染后进行清洗对比实验。对比实验有三部分,一是采用金刚石膜电化学氧化制备的过氧焦磷酸盐进行清洗,二是传统的RCA清洗方法,三是去离子水清洗。XPS测试结果表明,过氧焦磷酸盐清洗与RCA清洗方法对金属离子的去除效果均小于ppm级。过氧焦磷酸盐清洗对有机物的清洗效果优于传统的RCA清洗方法。因此金刚石膜电化学氧化清洗方法可以有效去除有机污染以及金属离子污染,实现了一剂多用,减少清洗步骤,达到节能环保的目的。