Improved luminescence from Y2Sn2O7:Tb nanoparticles co-doped with Sb ions

Very small nanoparticles (size 3-5 nm) of Y₂Sn₂O₇, Y₂Sn₂O₇:Tb³⁺ and Sb³⁺ co-doped Y₂Sn₂O₇:Tb³⁺ were prepared at a relatively low temperature of 700 °C. Y₂Sn₂O₇ host is characterised by an emission around 436 nm, which is arising from the oxygen vacancies present in the lattice. Tb³⁺ emission improves significantly when Sb³⁺ ions are co-doped with Y₂Sn₂O₇:Tb³⁺ nanoparticles. Incorporation of Sb³⁺ ions at the Y³⁺ site of Y₂Sn₂O₇ lattice and associated lattice distortion around Tb³⁺/Y³⁺ ions brought about by the difference in the stable coordination number of Sb³⁺ and Y³⁺ ions are responsible for the improved Tb³⁺ emission from the co-doped samples.     

Synthesis and characterization of nanocrystalline manganese pyrophosphate Mn2P2O7

Mn₂P₂O₇ polyhedral particles were synthesized by simple and cost-effective method using manganese nitrate hydrate and phosphoric acid in the presence of nitric acid with further calcinations at the temperature of 800 °C. The crystallite size obtained from X-ray line broadening is 31 ± 13 nm for the Mn₂P₂O₇. The X-ray diffraction and SEM results indicated that the synthesized nanoparticles have only the structure without the presence of any other phase impurities. The FT-IR and FT-Raman spectra show characteristic bands of the P₂O₇⁴⁻ anion. The UV–Vis–NIR spectrum confirms the octahedral coordination of Mn²⁺ ion.     

Electro-deposition of Y2O3:Eu thin film phosphor and its luminescent properties

Y₂O₃:Eu³⁺ red-emitting thin film phosphor was prepared by a two-step process: the cathodical deposition of thin film of yttrium hydroxide and europium hydroxide followed by an annealing process to achieve Eu³⁺ doped Y₂O₃ film. It is found that the atomic content of Eu³⁺ can be well controlled by simply adjusting the volume ratio of Y(NO₃)₃ to Eu(NO₃)₃ solutions. Dependence of the photoluminescence intensity on the atomic content of Eu³⁺ in Y₂O₃ was also studied. The best photoluminescence performance of Y₂O₃:Eu³⁺ thin film phosphor was achieved as atomic content of Eu³⁺ equal to 1.85 at.%.     

Uniform lanthanide-doped Y2O3 hollow microspheres: Controlled synthesis and luminescence properties

Lanthanide-doped uniform pure cubic phase Y₂O₃ hollow microspheres have been successfully synthesized via a facile, high yield urea-based coprecipitation route with assistant of carbon spheres templates. The diameter and shell thickness of the microspheres can be manipulated by adjusting carbon sphere templates. Under a 980 nm excitation, Yb³⁺/Er³⁺, Er³⁺, Yb³⁺/Tm³⁺-doped Y₂O₃ hollow microspheres emit bright upconversion red, green, blue light with high purity, respectively, while Eu³⁺, Eu³⁺/Tb³⁺-doped Y₂O₃ hollow microspheres exhibit intense downconversion red light under the excitation of 254 nm ultraviolet light. Especially, the 610 nm emission intensity of Eu³⁺ in the Eu³⁺/Tb³⁺-codoped Y₂O₃ hollow microspheres is almost 5 times of that in the Y₂O₃:Eu³⁺ hollow microspheres indicating the occurring of the energy transfer from Tb³⁺ to Eu³⁺ ions.     

Photoluminescence properties of Y2O3:Tb and YBO3:Tb green phosphors synthesized by hydrothermal method

In this work, two Tb³⁺ activated green phosphors: Y₂O₃:Tb³⁺ and YBO₃:Tb³⁺ were prepared by hydrothermal method. Photoluminescence properties of both phosphors were studied in details. Both phosphors exhibit similar luminescent characteristics symbolized by the dominant green emission at 545 nm. Concentration quenching occurs at the Tb³⁺ concentration of 1.60 atomic% and 2.57 atomic% for Y₂O₃:Tb³⁺ and YBO₃:Tb³⁺, respectively. Luminescence decay properties were characterized to better understand the mechanism of concentration quenching. Based on the calculation, the concentration quenching in both phosphors was caused by the dipole–dipole interaction between Tb³⁺ ions.     

Luminescence and energy transfer of Mn co-doped SrSi2O2N2:Eu green-emitting phosphors

Eu²⁺ and Mn²⁺ co-doped SrSi₂O₂N₂ green-phosphors, with promising luminescent properties (examined by their powder diffuse reflection, photoluminescence excitation and emission spectra) suitable for UV converted white LEDs, were produced by high temperature solid-state reaction method. The produced materials exhibited intense broad absorption bands at 220–500 nm and a broad emission band centered at ca. 530 nm, attributed to 4f–5d transitions of Eu²⁺. The emission intensity of Eu²⁺ ions was greatly enhanced by introducing Mn²⁺ ions into SrSi₂O₂N₂:Eu²⁺ due to the energy transfer from Mn²⁺ to Eu²⁺. The energy transfer probability from Mn²⁺ to Eu²⁺ depends strongly on the Mn²⁺ concentration, which is maximized at a Mn²⁺ concentration of 3 mol%. It drastically decreases for higher concentrations. The results indicated that SrSi₂O₂N₂:Eu²⁺, Mn²⁺ is a promising green-emitting phosphor for white-light emitting diodes with near-UV LED chips.     

Long wavelength Ce emission in Y6Si3O9N4 phosphors for white-emitting diodes

Y₆Si₃O₉N₄:Ce³⁺ phosphor was prepared by a solid-state reaction in reductive atmosphere. X-ray powder diffraction (XRD) analysis confirmed the formation of Y₆Si₃O₉N₄:Ce³⁺. Scanning electron microscopy (SEM) observation indicated that the microstructure of the phosphor consisted of irregular fine grains with an average size of about 5 μm. Photoluminescence (PL) measurements showed that the phosphor can be efficiently excited by near ultraviolet (UV) or blue light excitation, and exhibited bright green emission peaked at about 525 nm. Compared with Ce³⁺-doped Y₄Si₂O₇N₂ phosphors, Ce³⁺-doped Y₆Si₃O₉N₄ phosphors showed longer wavelengths of both excitation and emission. The Y₆Si₃O₉N₄:Ce³⁺ is a potential green-emitting phosphor for white LEDs.     

Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors

In this work, Y₂O₃ was evaluated as a gate insulator for thin film transistors fabricated using an amorphous InGaZnO₄ (a-IGZO) active layer. The properties of Y₂O₃ were examined as a function of various processing parameters including plasma power, chamber gas conditions, and working pressure. The leakage current density for the Y₂O₃ film prepared under the optimum conditions was observed to be ~ 3.5 × 10^− 9 A/cm² at an electric field of 1 MV/cm. The RMS roughness of the Y₂O₃ film was improved from 1.6 nm to 0.8 nm by employing an ALD (Atomic Layer Deposition) HfO₂ underlayer. Using the optimized Y₂O₃ deposition conditions, thin film transistors (TFTs) were fabricated on a glass substrate. The important TFT device parameters of the on/off current ratio, sub-threshold swing, threshold voltage, and electric field mobility were measured to be 7.0 × 10⁷, 0.18 V/dec, 1.1 V, and 3.3 cm²/Vs, respectively. The stacked insulator consisting of Y₂O₃/HfO₂ was highly effective in enhancing the device properties.     

Crystal-chemical anomalies in nonsuperconducting PrBa2Cu3O7

Studies of the crystal chemistry of nonsuperconducting PrBa₂Cu₃O₇ indicate that this compound is strictly isostructural with its superconducting RBa₂Cu₃O₇ (R = Y, rare earth) analogs. Crystallographically, Pr is present in the trivalent state according to the structural trends exhibited by the RBa₂Cu₃O₇ series as a function of R³⁺ ionic radius. The sole structural anomaly attributable to the presence of Pr³⁺ in the YBa₂Cu₃O₇ structure is a next-next-nearest neighbor effect and consists of an unusually short axial Cu-O distance, i.e., a short bond length between the in-plane copper and the chain oxygen. The correlation of this anomaly with the nonmetallic/nonsuperconducting properties of PrBa₂Cu₃O₇ supports a variety of literature reports, both theoretical and experimental, suggesting that the apical oxygen in the YBa₂Cu₃O₇ structure plays a critical role in mediating the appearance of superconductivity. The mechanism by which the f-electrons in Pr³⁺ (f ²) interact with the Cu-O manifold to produce the nonmetallic behavior of PrBa₂Cu₃O₇ remains unknown; however, superconductivity is turned back on for Nd³⁺ (f ³), immediately next to Pr and just slightly smaller. Careful comparative studies of superconducting NdBa₂Cu₃O₇ and nonmetallic PrBa₂Cu₃O₇ are needed to elucidate the critical difference in the behavior of the f-electrons and may shed light on the fundamental mechanism of high-temperature superconductivity in copper oxides.     

Luminescence properties of Eu ions doped in Y2−xGdxO3 thin films grown by pulsed laser deposition method

Luminescence properties of Y_2−xGd_xO₃:Eu³⁺ (x = 0 to 2.0) thin films are investigated by site-selective laser excitation spectroscopy. The films were grown by pulsed laser deposition method on SiO₂ (100) substrates. Cubic phase Y₂O₃ and Gd₂O₃ and monoclinic phase Gd₂O₃ are identified in the excitation spectrum of the ⁷F₀ → ⁵D₀ transition of Eu³⁺. The emission spectra of the ⁵D₀ → ⁷F_J (J = 1 and 2) transition from individual Eu³⁺ centers were obtained by tuning the laser to resonance with each excitation line. The excitation line at around 580.60 nm corresponds to the line from Eu³⁺ with C₂ site symmetry of cubic phase. New lines at 578.65 and 582.02 nm for the C_S sites of Gd₂O₃ with monoclinic phase are observed by the incorporation of Gd in Y₂O₃ lattice. Energy transfer occurs between Eu³⁺ ions at the C_S sites and from Eu³⁺ ions at the C_S sites to those at the C₂ site in Y_2−xGd_xO₃.     

Correlation of crystal structure and microwave dielectric properties for Zn(Ti1−xSnx)Nb2O8 ceramics

The correlation of crystal structure and microwave dielectric properties for Zn(Ti_1−xSn_x)Nb₂O₈ ceramics were investigated. The Zn(Ti_1−xSn_x)Nb₂O₈ ceramics contained ZnTiNb₂O₈ and an unknown Columbite-type phase. The columbite structure phase with increasing degree of ordering led to decrease of dielectric constant, increase of Qf and τ_f. The ZnTiNb₂O₈ with decreasing cation valence led to increase of τ_f. The typical values were: ? = 30.88, Qf = 43,500 GHz, τ_f = −54.32 × 10⁻⁶/ °C.     

Greatly improved photoluminescence properties of the electrodeposited Y2O3:Eu thin film phosphors by the addition of Na and K ions

In this work, Y₂O₃:Eu³⁺ thin film phosphors were prepared by electro-deposition method. The effect of Na⁺ and K⁺ ions on the photoluminescence properties of Y₂O₃:Eu³⁺ thin film phosphor was studied in details. It was found that the addition of Na⁺ and K⁺ ions could improve the photoluminescence intensity by 3 to 4 times. The highly improved photoluminescence intensity may be caused by different factors. The improved crystallinity and the increased optical volume caused by the flux effect of Na⁺ and K⁺ ions could be the major reasons for the enhanced photoluminescence intensity. It was also found that the average lifetime of Y₂O₃:Eu³⁺ thin film phosphors could be adjusted by the molar amount of Na⁺ and K⁺ ions.     

GeO2 dopant induced enhancement of red emission in CaAl12O19:Mn phosphor

In order to search efficient red-emitting phosphors for white LEDs application, CaAl₁₂O₁₉:Mn⁴⁺ phosphors have been prepared by a combustion method assisted with GeO₂ flux. The influence of GeO₂ concentration and annealing temperature on the structure and luminescence intensity for the phosphors has been investigated. The mechanism for luminescence enhancement has been discussed. At GeO₂ doping concentration of 1.5 mol%, the red emission intensity increases by 81% under 330 nm UVA excitation. More isolated luminescence center Mn⁴⁺ ions rather than pairs of Mn⁴⁺-Mn²⁺ ions are formed in the lattice with the introduction of GeO₂ at high temperature oxidation, leading to the enhancement of the red emission. A feasible new way to enhance the red emission in CaAl₁₂O₁₉:Mn⁴⁺ phosphor is obtained.     

High-capacity superconducting current leads of Y1Ba2Cu3O7?x

We have fabricated and measured a high-capacity superconducting current lead composed of a Y₁Ba₂Cu₃O_7–x cylinder, 20 cm long and 0.9 cm² cross section. A steady-state, d.c., critical current of 225 A at a temperature of 77 K was measured in this sample, using a voltage criterion of 2×10^–7 V/cm (p = 8×10^–10 ohm-cm). This current was limited by the currentinduced, self magnetic field. To our knowledge this is the largest d.c. critical current so far reported in a Y₁Ba₂Cu₃O_7–x sample and demonstrates the possibility of using hightemperature superconducting HTS materials for current leads to low-temperature superconducting LTS magnets or in power distribution systems.     

Structural and optical properties of Er-doped Y2Ti2O7 thin films by sol-gel method

Er³⁺-doped Y₂Ti₂O₇ and Er₂Ti₂O₇ thin films were fabricated by sol-gel spin-coating method. A well-defined pyrochlore phase Er_xY_2-xTi₂O₇ was observed while the annealing temperature exceeded 800 °C. The average transmittance of the Er_xY_2-xTi₂O₇ thin films annealed at 400 to 900 °C reduces from ∼ 87 to ∼ 77%. The refractive indices and optical band gaps of Er_xY_2-xTi₂O₇ (x = 0-2) annealed at 800 °C/1 h vary from 2.20 to 2.09 and 4.11 to 4.07 eV, respectively. The ∼ 1.53 μm photoluminescence spectrum of Er³⁺ (5 mol%)-doped Y₂Ti₂O₇ thin films annealed at 700 °C/1 h exhibits the maximum intensity and full-width at half maximum (∼ 60 nm).     

Local thermal effect at luminescent spot on upconversion luminescence in Y2O3:Er,Yb nanoparticles

Y₂O₃:Er³⁺,Yb³⁺ nanoparticles were synthesized using Pechini type sol-gel method and then characterized by XRD, TEM, SEM, Raman spectroscopy, and fluorescence spectrophotometer. Local temperature effect on upconversion luminescence intensities was theoretically analyzed and experimentally tested. These results indicate that a competition process between local temperature at luminescent spot and laser pump power density decides the development trend of upconversion luminescence intensity. Therefore, it can be concluded that the most intensive upconversion luminescence in Y₂O₃:Er³⁺,Yb³⁺ nanoparticles can be achieved at a certain pump power density, which should be slightly below a given constant value (the corresponding threshold of temperature).     

Sr3.5Mg0.5Si3O8Cl4: Eu bluish-green-emitting phosphor for NUV-based LED

Sr₄Si₃O₈Cl₄:Eu²⁺ and Sr_3.5Mg_0.5Si₃O₈Cl₄:Eu²⁺ phosphors were prepared by a conventional solid state reaction (SS). Excited by 370 nm near-ultraviolet light, the phosphors show an efficient bluish-green wide-band emission centering at 484 nm, which originates from the 4f5d¹ → 4f⁷ transition of Eu²⁺ ion. The excitation spectra of the phosphors are a broad band extending from 250 nm to 400 nm. Mg²⁺-codoping greatly enhances the bluish-green emission of the phosphors. An LED was fabricated by coating the Sr_3.5Mg_0.5Si₃O₈Cl₄:0.08Eu²⁺ phosphor onto an ~ 370 nm-emitting InGaN chip. The LED exhibits bright bluish-green emission under a forward bias of 20 mA. The results indicate that Sr_3.5Mg_0.5Si₃O₈Cl₄:0.08Eu²⁺ is a candidate as a bluish-green component for fabrication of NUV-based white LEDs.     

The photoluminescence of Ce-doped Lu4Si2O7N2 green phosphors

Cerium-doped Lu₄Si₂O₇N₂ green phosphors were synthesized by a high-temperature solid-state reaction method under nitrogen atmosphere. Compared with Ce-doped Y₄Si₂O₇N₂ phosphors, Ce-doped Lu₄Si₂O₇N₂ phosphors showed longer wavelengths of both excitation and emission, lower Stokes shift, and much stronger emission intensity. Based on the first-principles calculations of the two phosphors, the strong emission intensity originates from the large density of states. At last, the effects of Ce³⁺ concentration on photoluminescence were also examined.     

Preparation, structure analysis and photoluminescence properties of MgGa2O4:Mn

In this work the photoluminescence and excitation spectra at room temperature of the spinel-type MgGa₂O₄ with 0.5% and 10.0% of Mn²⁺ have been studied. The polycrystalline samples were synthesized by standard solid-state reaction methods at high temperature. The photoluminescence spectra exhibit green and red emissions for both samples, attributed to ⁴T₁(⁴G) → ⁶A₁(⁶S) transition of Mn²⁺ ion in tetrahedral and octahedral sites of oxygen, respectively. The excitation spectra exhibit features unambiguously assigned to d–d transitions of Mn²⁺ in those kinds of sites. From the excitation spectra and Tanabe–Sugano matrices the crystal field Dq and Racah B parameters were obtained.     

Fabrication of nanostructure Al2O3/ZrO2 (Y2O3) eutectic by combustion synthesis melt-casting under ultra-high gravity

A novel method for preparing Al₂O₃/ZrO₂ (Y₂O₃) eutectic was developed by combining combustion synthesis with melt-casting under ultra-high gravity (CSMC-UHG). The application of UHG = 800 g resulted in a high relative density of 99.8%, and an orientation-growth along the UHG direction. The microstructure was composed of aligned growth regimes containing a triangular dispersion of orderly ZrO₂ rods in Al₂O₃ matrix with a spacing of 300 nm. The eutectic had a high fracture toughness up to 17.9 MPa·m^1/2, which was mainly attributed to the nanostructure and the elastic bridge effects of the aligned ZrO₂ rods.