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钛酸锶钡(BST)薄膜的介电性能机理研究进展 总被引:3,自引:0,他引:3
钛酸锶钡(BST)薄膜是一种重要的铁电薄膜,应用广泛,是高新技术研究的前沿和热点之一。简要介绍BST薄膜的制备方法和应用,重点讨论BST薄膜的极化、电压非线性、漏电流的机理、表征及影响因素,并综述了铁电薄膜的疲劳机制和消除疲劳措施等方面的研究进展,提出了研究中需要解决的一些问题。 相似文献
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钛酸锶钡 (BST)薄膜是一种重要的铁电薄膜 ,应用广泛 ,是高新技术研究的前沿和热点之一。简要介绍BST薄膜的制备方法和应用 ,重点讨论BST薄膜的极化、电压非线性、漏电流的机理、表征及影响因素 ,并综述了铁电薄膜的疲劳机制和消除疲劳措施等方面的研究进展 ,提出了研究中需要解决的一些问题 相似文献
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钛酸锶钡(BST)薄膜的组成、结构与性能研究进展 总被引:5,自引:0,他引:5
钛酸锶钡(BST)薄膜是一种重要的铁电薄膜,应用广泛,是高新技术研究的前沿和热点之一。简要介绍了BST薄膜的制备方法和应用,对此薄膜的基片、电极、晶界、界面、热处理、膜厚及组成、结构、性能等方面作了重点讨论,提出了研究中需要解决的一些问题。 相似文献
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在Pt(111)/Ti/SiO2/Si(100)衬底上,用脉冲激光沉积工艺制备出了高度a轴取向生长的(Ba0.65Sr0.35)TiO3(BsT)薄膜。薄膜为柱状生长的纳米晶粒,平均晶粒尺寸为50nm。在外加电场254kV/cm时,BST薄膜的相对介电常数与介电调谐率为810和76.3%。高的介电调谐率主要是BST薄膜具有高度a轴取向的柱状生长晶粒,因为来自沿平面c轴极化而产生的内部应力,在电场作用下,获得了高介电调谐率。 相似文献
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钛酸锶钡 (BST)薄膜是一种重要的铁电薄膜 ,应用广泛 ,是高新技术研究的前沿和热点之一。简要介绍了BST薄膜的制备方法和应用 ,对此薄膜的基片、电极、晶界、界面、热处理、膜厚及组成、结构、性能等方面作了重点讨论 ,提出了研究中需要解决的一些问题 相似文献
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Y.Q. Wang W.S. LiangW.J. Kong Peter K. PetrovNeil M. Alford 《Thin solid films》2012,520(18):5918-5921
Ba0.5Sr0.5TiO3 single-layered and multilayered films were epitaxially grown on a (001) LaAlO3 substrate using single target and dual target pulsed laser deposition, respectively. Compared to the single-layered films, the multilayered films exhibited broader phase transition and improved thermo-stability. The microstructure of these epitaxial films was investigated using high-resolution transmission electron microscopy in details. Misfit and threading dislocations were observed in the single-layered film, while the threading dislocations were dramatically decreased and no misfit dislocations were found in the multilayered film. It is suspected that the difference in dislocation densities is responsible for the different behaviors of the permittivity with temperature. 相似文献
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通过射频磁控溅射在单晶LaAlO3(100)衬底上生长了膜厚为120nm的La0.75Na0.25MnO3外延膜. 通过X射线衍射、超导量子干涉仪、直流四探针法对其进行了表征. 结果表明, 薄膜为(100)取向外延膜. 居里温度TC=270K, 在居里温度附近, 发生铁磁-顺磁转变. 此材料呈现出典型的自旋玻璃特性, 是由于应力造成的. 在室温附近, 此材料在1T磁场下, 其磁电阻极大值为40.3%. 80K<T<210K时, 其输运机制为电子-电子散射, 电阻率满足ρ=ρ0+ρ1T2+ρ2T5; 220K<TT>TMI时, 其输运机制满足小极化子模型. 相似文献
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Thin film Au/Pt/Ba0.25Sr0.75TiO3/Pt/Au/Ti capacitor structures were fabricated on fused silica substrates using pulsed laser deposition of ferroelectric films. Low-field dielectric measurements were performed as a function of frequency in the range 1-25 GHz at different external dc fields up to 360 kV/cm. Resonant microwave power absorption observed at frequencies less than 10 GHz under dc field is due to electrostriction and field induced piezoelectric effects. The effects are simulated using an electroacoustic model of the multilayer capacitor structure. A circuit model is applied to investigate the influence of series resistance and inductance of interconnect/lead strips on capacitor performance. Analysis shows that the measured loss tangent of the capacitor is mainly due to series resistance and frequency dispersion of capacitance is caused by series inductance. The de-embedded value of the loss tangent is 0.005 at 10 GHz. The measured loss tangent is less than 0.02 and tunability is up to 40% in the whole frequency range. These parameters indicate high potential of Ba0.25Sr0.75TiO3 capacitors for applications in voltage controlled devices of microwave microelectronics. 相似文献
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Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) depth profiling data show that each element component of the BST film possesses a uniform distribution from the outermost surface to subsurface, but obvious Ti-rich is present to BST/Pt interface because Ti4+ cations are partially reduced to form amorphous oxides such as TiOx (x < 2). Based on the measurement of XPS valence band spectrum, an energy band diagram in the vicinity of BST/Pt interface is proposed. Dielectric property measurements at 1 MHz reveal that dielectric constant and loss tangent are 323 and 0.0095 with no bias, while 260 and 0.0284 with direct current bias of 25 V; furthermore, tunability and figure of merit are calculated to be 19.51% and 20.54, respectively. The leakage current density through the BST film is about 8.96 × 10− 7 A/cm2 at 1.23 V and lower than 5.66 × 10− 6 A/cm2 at 2.05 V as well as breakdown strength is above 3.01 × 105 V/cm. 相似文献
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Not only the ferroelectric properties of Ba0.6Sr0.4TiO3 thin films but also the design, fabrication and microwave properties of coplanar waveguide (CPW) phase shifter were investigated. When the applied voltage changes from zero to 20 V range at a frequency of 1 kHz, the dielectric constant, tunability, remanent polarization (2Pr) and coercive electric field (Ec) of the BST films are 1266, 29.5%, 2.29 μC/cm2 and 22.27 kV/cm, respectively. The structure of CPW phase shifter was designed by ANSOFT High Frequency Structure Simulator (HFSS) and Agilent Advanced Design System (ADS). The designed phase shifter consists of 56 same sections. It is observed from the photograph of the fabricated device that the lines of electrodes are regular and the widths of bottom electrodes overlapped by top electrodes are about 5 μm. It was found that the phase shift gradually increases as the voltage increases from 0 V to 20 V, which may be due to the tunability of BST films varies with external dc field. About 168° phase shift was achieved at 28 GHz with a bias voltage of 20 V. 相似文献
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A modified sol-gel method was used to fabricate (Pb0.25Bax Sr0.75−x)TiO3 (PBST) thin films with x = 0.05,0.1,0.15 and 0.2 on Pt/TiO2/SiO2/Si substrate. The structure, surface morphology, dielectric and tunable properties of PBST thin films were investigated as a function of barium content (x). X-ray diffraction and scanning electron microscopy analysis showed that we could get pure PBST perovskite phase and relative fine density thin films with smooth surface. It was found that the crystal lattice constant, grain size, room temperature dielectric constant, dielectric loss and tunability of Ba solutionizing PST thin films increased with the increase in Ba content. For (Pb0.25Ba0.2Sr0.55)TiO3 thin film, it had the highest dielectric constant of 1390 and the largest tunability of 80.6%. The figure of merit parameter reached a maximal value of 28.9 corresponding to the (Pb0.25Ba0.05 Sr0.7)TiO3 thin film, whose dielectric constant, dielectric loss and tunability measured at 1 MHz were 627, 0.024 and 69.4%, respectively. 相似文献
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Ba0.65Sr0.35TiO3陶瓷材料的制备及介电特性研究 总被引:3,自引:0,他引:3
采用溶胶-凝胶工艺制备了Ba0.65Sr0.35TiO3粉体,并利用微波烧结技术对粉体进行了合成和烧结,研究分析了样品的介电特性,并与传统制备工艺获得的样品进行了性能比较。实验结果表明,获得的Ba0.65Sr0.35TiO3粉体颗粒较细,其合成温度和烧结成瓷温度都较传统工艺有大幅度降低,分别为900和1310℃;可以获得晶粒尺寸在1μm以内的陶瓷;随晶粒的减小,材料的相对介电常数变化不大,而介电损耗大大降低。 相似文献
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Ba0.8Sr0.2TiO3/Poly (vinylpyrrolidone) (BST/PVP) composite fibers were successfully synthesized via electrospinning. The ceramic nanofibers were obtained after calcining the composite at 800 °C for 2 h. The morphology and structure of the BST fibers were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results reveal that the as-synthesized BST nanofibers show a diameter of 50-150 nm with the length over 0.1 mm, and a well-defined perovskite crystal structure. The electrical properties of the as-synthesized BST nanofibers were investigated through an impedance-type humidity sensor. The nanofibers exhibited excellent humidity sensing properties at room temperature. The possible sensing mechanism was proposed. 相似文献
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Jie HeJiechao Jiang Jian LiuMing Liu Greg CollinsChunrui Ma Chonglin ChenEfstathios I. Meletis 《Thin solid films》2011,519(13):4371-4376
Highly epitaxial La0.5Ba0.5CoO3 (LBCO) thin films with sharp interface and a thickness of 200 nm were epitaxially grown on (001) SrTiO3 substrates using pulsed laser deposition. High-resolution transmission electron microscopy and electron diffraction analysis revealed that the films have a triple-layered structure. The first layer, close to the film/substrate interface, has a thickness of ~ 6 nm and is a defect free single crystal disordered cubic structure (a = 3.882 Å) which has a lattice mismatch of − 0.59% with respect to the substrate. The second layer which dominates the film structure has a single crystal disordered cubic structure (a = 3.854 Å) which has a lattice mismatch of − 1.31% with respect to the substrate. The third layer located on the top of the film has a thickness of several nanometers and consists of 112-type ordered tetragonal structure. The cubic structures in the first and second layer have an orientation relationship of (001)LBCO//(001)STO and < 100 > LBCO//< 100 > STO with respect to the substrate. Self-patterned 3-dimensional nano structures with a dimension range from 2 to 10 nm were formed in the second and third layers. These nano structures were formed by the enclosure of anti-phase boundary planes which are parallel to the {100} of the cubic structure. Epitaxial LBCO thin films with such nano structures are hard ferromagnetic with a large coercive field value and magnetoresistance effect value (~ 24%), and exhibit semiconductor behavior at temperatures < 300 K. 相似文献
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The Ba0.5Sr0.5TiO3 (BST) thin film with the thickness of 400 nm deposited from powder target is prepared by the radio-frequency magnetron sputtering technique. The deposition rate of BST film is estimated to be 45 nm/min, which is very fast for ferroelectric materials. The dielectric properties of the as-prepared BST thin film are demonstrated. High dielectric tunability up to 42.7% and low dielectric loss small to 0.01 are achieved at a low applied voltage of 5 V. The results demonstrate that the RF magnetron sputtering from powder target is a versatile, novel technique for the deposition of high-quality ferroelectric thin films. 相似文献