石墨烯量子点/CdS/CdSe共敏化太阳能电池

以三维锐钛矿TiO₂微球为上层光散射层材料, 以商业纳米TiO₂为下层连接材料, 采用刮刀法制备了一种新颖的双层TiO₂薄膜, 并应用于量子点敏化太阳能电池(QDSSC)。其中, 石墨烯量子点(GQDs)采用滴液法引入, CdS/CdSe量子点采用连续离子层吸附法(SILAR)制备。采用场发射扫描电镜、透射电镜、X射线衍射、紫外-可见漫反射光谱及荧光光谱对样品进行表征。实验还制备了CdS/CdSe量子点敏化及石墨烯量子点/CdS/CdSe共敏化太阳能电池, 并研究了石墨烯量子点及CdS不同敏化周期及对电池性能影响。研究结果表明, 石墨烯量子点及CdS不同敏化周期对薄膜的光学性质、电子传输及载流子复合均有较大影响。优选条件下, TiO₂/QGDs/CdS(4)/CdSe电池的光电转换效率为1.24%, 光电流密度为9.47 mA/cm², 显著高于TiO₂/CdS(4)/CdSe电池的这些参数(0.59%与6.22 mA/cm²)。这主要是由于TiO₂表层吸附石墨烯量子点后增强了电子的传输, 减少了载流子的复合。     

量子点敏化太阳能电池光阳极的研究进展

介绍量子点敏化太阳能电池的发展现状及趋势,针对光阳极改性来提高量子点敏化太阳能电池转化效率的方法,从半导体薄膜、量子点共敏化、量子点掺杂3个方面综合分析光阳极的研究进展和相关技术。根据制约电池效率的主要因素,提出量子点敏化太阳能电池的未来发展趋势,包括继续优化光阳极半导体薄膜的组成及结构、探索新型的宽光谱响应量子点以及发展高效的界面修饰技术等。     

纳米ZnO材料在染料/量子点敏化太阳能电池中的研究进展

ZnO是一种性能优异的环保半导体材料,其具有合成原材料来源丰富、制备条件简单、形貌结构易调控等优点,被广泛应用于能源、信息、环境等领域。在染料/量子点敏化太阳能电池中,ZnO通常被用作光阳极材料,负载光吸收剂,同时接收和传输电子。通过发挥其结构易控制的优点,一系列不同的ZnO纳米结构,如纳米球,纳米线,纳米片或纳米花等被用于敏化太阳能电池的光阳极,从而极大地提高了敏化太阳能电池的性能。综述将主要从单一纳米结构和复合结构两方面对纳米ZnO材料进行介绍,讨论了不同ZnO结构在染料/量子点敏化太阳能电池中的最新研究进展,并对电池光电性能的进一步提升提出新的展望。     

Ag2Se量子点共敏化固态染料敏化太阳能电池光电性能研究

采用水相共沉积法制备Ag₂Se量子点(QDs), 并与染料共敏化制备固态染料敏化太阳能电池(DSSCs)。考察了Ag₂Se量子点不同敏化方式(TiO₂/N719/QDs, TiO₂/QDs/N719)及敏化时间(0~5 h)对DSSCs性能的影响。通过透射电子显微镜(TEM)和紫外-可见光谱图(UV-Vis)对Ag₂Se量子点结构及光学性质进行了表征; 采用光调制光电流/电压谱(IMPS/VS)以及交流阻抗谱(EIS)对器件中载流子传输过程进行了研究。TiO₂/QDs/N719的电池器件比TiO₂/ N719/QDs具有更高的单色光量子转化效率(IPCE)及光电转化效率, 这是由于TiO₂/QDs/N719可以吸附更多的量子点和染料。随着Ag₂Se量子点敏化时间的延长, 光电转化效率先提高后降低, 最高达到3.97%。Ag₂Se量子点在器件中起到了阻挡层作用, 可以促进电子传输, 抑制电子-空穴复合。而随着量子点敏化时间超过2 h, 电子陷入陷阱的几率增加, 导致器件的光伏性能下降。     

PbS量子点修饰中空CeO2复合微球及光催化降解罗丹明B性能研究

制备了PbS量子点(PbSQDs)修饰的中空CeO₂微球(PbS@h-CeO₂)。通过SEM、(TEM、XRD和XPS测试复合材料的形貌和结构，通过UV-Vis、电化学和稳态荧光测试其光电性能。结果发现，复合材料为直径约700～800nm的中空纳米微球。对复合材料进行光催化降解RhB的性能测试表明，PbS@h-CeO₂-30在30min暗吸附和150min可见光照条件下可去除78.4%的RhB,同样条件下h-CeO₂只能去除37%的RhB。结果表明，引入PbSQDs修饰h-CeO₂后，通过量子点调节光的吸收范围，提高光生电子-空穴的分离效率，从而提高光催化性能。最后推导出其催化增强机理。     

CdSe/CdS纳米颗粒共敏化ZnO光电极的制备及光电化学性能研究

采用电沉积法将CdS和CdSe纳米颗粒沉积在ZnO纳米线阵列上得到CdSe/CdS纳米颗粒共敏化ZnO光电极。利用X射线衍射、扫描电镜、透射电镜和能谱仪等对所得样品结构和形貌进行表征,并通过紫外-可见分光光度计和电化学工作站测试其光吸收性能和光电化学性能。结果发现,相对纳米颗粒单敏化CdS/ZnO光电极而言,纳米颗粒共敏化CdSe/CdS/ZnO光电极具有更好的可见光吸收性能,进而提高短路电流密度和光电转换效率分别到9.56mA/cm2和1.89%。     

TiO2/CuInS2复合纳米棒阵列的制备及其光电性能

采用两步溶剂热法在氧化氟锡(FTO)导电玻璃基底上制备了CuInS2敏化TiO2纳米棒阵列复合薄膜光阳极.利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了复合阵列薄膜的晶体结构和表面形貌,同时采用紫外可见吸收分光光度计(UV-Vis)及光电流电压(I-V)曲线研究了CuInS2敏化TiO2纳米阵列薄膜的光学及光电化学性质.研究结果表明,TiO2纳米棒阵列薄膜被CuInS2敏化后在可见光区的吸收有明显的增强.在模拟太阳光照射下(100 mW/cm2),利用这种复合薄膜作为光阳极组装的量子点敏化太阳能电池的开路电压为0.29 V,短路电流密度为0.15 mA/cm2,具有一定的光电转换能力.     

碳掺杂TiO2纳米管电极的简易制备及其光电化学性能

通过阳极氧化方法制备了TiO₂纳米管薄膜, 在NaHCO₃存在下对该薄膜进行热处理得到碳掺杂TiO₂(C-TiO₂)纳米管薄膜, 通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、紫外-可见漫反射光谱、电化学阻抗谱(EIS)和Mott-Schottky等方法对得到的薄膜进行表征。XRD结果表明C-TiO₂纳米管薄膜中的TiO₂主要为锐钛矿晶型; SEM结果显示薄膜存在纳米管结构; XPS分析表明C-TiO₂纳米管薄膜中的C以替代型掺杂形式进入到TiO₂晶格中; 光电化学性能测试显示, 相对于TiO₂纳米薄膜, C-TiO₂阻抗减小, 平带电位由-0.28 V负移至-0.38 V, 具有更好的紫外-可见光和可见光响应, 紫外-可见光下的光电流是未掺杂的1.7倍。利用阳极氧化的Ti丝作为光阳极和Pt丝作为对电极组装了染料敏化太阳能电池并进行了性能测试, 结果表明, 经过碳掺杂的Ti /TiO₂丝为光阳极电池的短路电流密度和电池效率分别达到0.17 mA/cm²和3.8%, 较未掺杂的Ti/TiO₂丝为光阳极的电池的短路电流密度和电池效率均增大, 表明适量的碳掺杂有利于提高电池效率。     

ZnO—TiO2染料敏化太阳能电池的制备和性能

采用低温水溶液法制备ZnO纳米花,将其与TiO2纳米颗粒以不同的质量比混合制备成复合浆料,采用刮涂法涂敷在掺氟的SnOz透明导电玻璃（FTO）上制备ZnO纳米花-TiO2纳米颗粒复合薄膜光阳极,与Pt对电极和电解质组装成染料敏化太阳能电池（DSSC）。通过光伏性能和电化学阻抗谱测试分析,研究ZnO纳米花与TiO2纳米颗...     

PbS量子点能级结构的尺寸和配体依赖性及其对异质结电池性能的影响

通过电化学循环伏安测试和吸收光谱测试, 确定了有机配体(油酸)和原子配体(四正丁基碘化铵, TBAI)钝化的不同粒径(2.6~4.5 nm)PbS量子点的导带和价带能级, 并研究了量子点尺寸对PbS/TiO₂异质结电池(空气气氛中制备)性能的影响。结果表明：PbS量子点的能级结构受其粒径大小和表面配体特性的影响。当PbS量子点尺寸从2.6 nm增加至4.5 nm时, 油酸包覆PbS量子点的导带底从-3.67 eV减小到-4.0 eV, 价带顶从-5.19 eV增加到-4.97 eV; 而对于TBAI配体置换的PbS量子点, 其导带底和价带顶则分别从-4.15 eV和-5.61 eV变化至-4.51 eV和-5.46 eV。粒径为3.9 nm的PbS量子点所制备的电池性能最优, 其能量转化效率达到2.32%, 这可归因于其适宜的禁带宽度、结晶质量和良好的PbS/TiO₂界面能级匹配度。     

A Layer‐by‐Layer ZnO Nanoparticle–PbS Quantum Dot Self‐Assembly Platform for Ultrafast Interfacial Electron Injection

Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low‐cost, high‐performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy‐level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer‐by‐layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic‐energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis.     

Highly Efficient Inverted Structural Quantum Dot Solar Cells

Highly efficient PbS colloidal quantum dot (QD) solar cells based on an inverted structure have been missing for a long time. The bottlenecks are the construction of an effective p–n heterojunction at the illumination side with smooth band alignment and the absence of serious interface carrier recombination. Here, solution‐processed nickel oxide (NiO) as the p‐type layer and lead sulfide (PbS) QDs with iodide ligand as the n‐type layer are explored to build a p–n heterojunction at the illumination side. The large depletion region in the QD layer at the illumination side leads to high photocurrent. Interface carrier recombination at the interface is effectively prohibited by inserting a layer of slightly doped p‐type QDs with 1,2‐ethanedithiol as ligands, leading to improved voltage of the device. Based on this graded device structure design, the efficiency of inverted structural heterojunction PbS QD solar cells is improved to 9.7%, one time higher than the highest efficiency achieved before.     

Highly enhanced solar conversion efficiency of novel layer-by-layer PbS:Hg and CdS quantum dots-sensitized ZnO thin films prepared by sol–gel spin coating

Owing to superior optical properties, ZnO thin films have immense potential in solar cell preparation. ZnO thin films were prepared by sol–gel technology. However, this is prolonged technique and it necessitates a complex precursor solution. In the present work, ZnO thin films are prepared by sol–gel spin coating with simple precursor, zinc acetate. A very remarkable feature of the method is that polycrystalline, non-abrasive and translucent films were obtained. Additionally, novel PbS:Hg quantum dots (QDs) and CdS QDs are successfully synthesized. Moreover, both types of QDs are deposited layer-by-layer over pure ZnO and Ag:ZnO thin films. The films are characterized by X-ray diffraction, and crystallinity continuation is observed even after the addition of QDs layer. Presence of synthesized QDs over thin films is also confirmed. The films were also characterized by scanning electron microscopy (SEM) and UV–Vis spectroscopy. Uniform, dense and porous surface morphology is clearly revealed. Sensitized thin films show a huge decline in band gap and large enhancement in efficiency. Superior current density (\(10.87~\hbox {mA}~\hbox {cm}^{-2})\) is achieved with PbS:Hg/CdS/Ag:ZnO, which leads to enhancement in overall solar conversion efficiency by 6.34 times.     

Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

With the advent of the era of big data, resistive random access memory (RRAM) has become one of the most promising nanoscale memristor devices (MDs) for storing huge amounts of information. However, the switching voltage of the RRAM MDs shows a very broad distribution due to the random formation of the conductive filaments. Here, self‐assembled lead sulfide (PbS) quantum dots (QDs) are used to improve the uniformity of switching parameters of RRAM, which is very simple comparing with other methods. The resistive switching (RS) properties of the MD with the self‐assembled PbS QDs exhibit better performance than those of MDs with pure‐Ga₂O₃ and randomly distributed PbS QDs, such as a reduced threshold voltage, uniformly distributed SET and RESET voltages, robust retention, fast response time, and low power consumption. This enhanced performance may be attributed to the ordered arrangement of the PbS QDs in the self‐assembled PbS QDs which can efficiently guide the growth direction for the conducting filaments. Moreover, biosynaptic functions and plasticity, are implemented successfully in the MD with the self‐assembled PbS QDs. This work offers a new method of improving memristor performance, which can significantly expand existing applications and facilitate the development of artificial neural systems.     

聚3-甲基噻吩修饰量子点硫化镉连接纳米结构TiO2复合膜电极光电化学研究

采用原位化学法在纳米结构TiO2电极上制备了量子点CdS(Q-CdS),并用电化学方法在TiO2/QCdS表面聚合3-甲基噻吩po1y(3-Methylthiophene)(PMeT).通过对PMeT修饰Q-CdS连接TiO2纳米结构膜的研究表明,PMeT和Q-CdS单独修饰纳米结构TiO2电极和PMeT修饰Q-CdS连接纳米结构TiO2电极的光电流产生的起始波长都向长波方向移动;一定条件下在可见光区光电转换效率均较纳米结构TiO2的光电转换效率有明显的提高;聚3-甲基噻吩(PMeT)与Q-CdS连接的纳米结构TiO2之间存在p-n异质结.在一定条件下p-n异质结的存在有利于光生电子/空穴的分离,提高了光电转换效率.     

Bilayer PbS Quantum Dots for High‐Performance Photodetectors

Due to their wide tunable bandgaps, high absorption coefficients, easy solution processabilities, and high stabilities in air, lead sulfide (PbS) quantum dots (QDs) are increasingly regarded as promising material candidates for next‐generation light, low‐cost, and flexible photodetectors. Current single‐layer PbS‐QD photodetectors suffer from shortcomings of large dark currents, low on–off ratios, and slow light responses. Integration with metal nanoparticles, organics, and high‐conducting graphene/nanotube to form hybrid PbS‐QD devices are proved capable of enhancing photoresponsivity; but these approaches always bring in other problems that can severely hamper the improvement of the overall device performance. To overcome the hurdles current single‐layer and hybrid PbS‐QD photodetectors face, here a bilayer QD‐only device is designed, which can be integrated on flexible polyimide substrate and significantly outperforms the conventional single‐layer devices in response speed, detectivity, linear dynamic range, and signal‐to‐noise ratio, along with comparable responsivity. The results which are obtained here should be of great values in studying and designing advanced QD‐based photodetectors for applications in future flexible optoelectronics.     

CdS/TiO2纳米棒阵列复合材料的制备及其光电化学特性

以水热法在氟掺杂的氧化锡透明导电玻璃(FTO)上制备的TiO₂纳米棒阵列为衬底, 通过连续化学水浴沉积(S-CBD)法将CdS量子点 (QDs)沉积在TiO₂纳米棒上, 形成CdS/TiO₂阵列复合材料。分别利用高分辨透射电子显微镜(HRTEM)、 场发射扫描电子显微镜(FESEM)、 X射线衍射(XRD)和紫外可见光谱(UV-vis)等对样品的形貌、 晶型以及光吸收性能进行了表征。结果表明, TiO₂纳米棒阵列长度约为2.9 μm, CdS QDs的尺寸大约在5~9 nm。随着沉积层数的增加, CdS QDs的厚度增加, 同时伴随着光吸收边的红移。通过电流-电压特性曲线对其光电流-电压特性进行了分析, 发现光电流和光电转换效率均呈现出先增大后减小的规律。100 mW/cm²的光照下, 在S-CBD为7层时, 光电流和开路电压最大值分别达到2.49 mA·cm^-2和1.10 V, 而电池的效率达到最大值1.91%。     

Metal on metal oxide nanowire Co-catalyzed Si photocathode for solar water splitting

We report a systematic study of Si|ZnO and Si|ZnO| metal photocathodes for effective photoelectrochemical cells and hydrogen generation. Both ZnO nanocrystalline thin films and vertical nanowire arrays were studied. Si|ZnO electrodes showed increased cathodic photocurrents due to improved charge separation by the formation of a p/n junction, and Si|ZnO:Al (n(+)-ZnO) and Si|ZnO(N(2)) (thin films prepared in N(2)/Ar gas) lead to a further increase in cathodic photocurrents. Si|ZnONW (nanowire array) photocathodes dramatically increased the photocurrents and thus photoelectrochemical conversion efficiency due to the enhanced light absorption and enlarged surface area. The ZnO film thickness and ZnO nanowire length were important to the enhancements. A thin metal coating on ZnO showed increased photocurrent due to a catalyzed hydrogen evolution reaction and Ni metal showed comparable catalytic activities to those of Pt and Pd. Moreover, photoelectrochemical instability of Si|ZnO electrodes was minimized by metal co-catalysts. Our results indicate that the metal and ZnO on p-type Si serve as co-catalysts for photoelectrochemical water splitting, which can provide a possible low-cost and scalable method to fabricate high efficiency photocathodes for practical applications in clean solar energy harvesting.     

TiO2 nanowires sensitized with CdS quantum dots and the surface photovoltage properties

TiO₂ nanowires prepared by thermal annealing of anodized Ti foil were sensitized with CdS quantum dots (QDs) via chemical bath deposition (CBD). Microstructural characterizations by SEM, TEM and XRD show that the CdS nanocrystals with the cubic structure have intimate contact to the TiO₂ nanowires. The amount of CdS QDs can be controlled by varying the CBD cycles. The experiment results demonstrate that the surface photovoltage (SPV) response intensity was significantly enhanced and the surface photovoltage response region was also expanded obviously for the TiO₂ NWs sensitized by CdS QDs.     

Van der Waals Integration of Bismuth Quantum Dots–Decorated Tellurium Nanotubes (Te@Bi) Heterojunctions and Plasma‐Enhanced Optoelectronic Applications

Van der Waals (vdW)‐integrated heterojunctions have been widely investigated in optoelectronics due to their superior photoelectric conversion capability. In this work, 0D bismuth quantum dots (Bi QDs)‐decorated 1D tellurium nanotubes (Te NTs) vdW heterojunctions (Te@Bi vdWHs) are constructed by a facile bottom‐up assembly process. Transient absorption spectroscopy suggests that Te@Bi vdWH is a promising candidate for new‐generation optoelectronic devices with fast response properties. The subsequent experiments and density functional theory calculations demonstrate the vdW interaction between Te NTs and Bi QDs, as well as the enhanced optoelectronic characteristics owing to the plasma effects at the interface between Te NTs and Bi QDs. Moreover, Te@Bi vdWHs‐based photodetectors show significantly improved photoresponse behavior in the ultraviolet region compared to pristine Te NTs or Bi QDs‐based photodetectors. The proposed integration of vdWHs is expected to pave the way for constructing new nanoscale heterodevices.