Investigation of the Structure and Electrical Properties of (KxNa0.96−xLi0.04)(Nb0.96−yTaySb0.04)O3 Piezoelectric Ceramics Modified with Manganese

The effect of high doping levels of manganese (Mn) on the structure and electrical properties of (K_xNa_1?x)NbO₃ (KNN) ceramics containing Li, Ta, and Sb has been investigated. The samples were measured using synchrotron X‐ray diffraction whereas Rietveld refinement with Fullprof was used to determine the structural information as a function of temperature. Temperature‐dependent dielectric measurement was used to compare the phase transition temperatures. The results show that Mn decreases the temperature range of phase coexistence between the orthorhombic and tetragonal phase from ~180°C to ~120°C. The Curie temperature remained unchanged with Mn addition while the dielectric constant and dielectric loss increased with Mn addition. High amounts of Mn led to a reduction in both piezoelectric and ferroelectric properties. The remnant polarization, remnant strain, and piezoelectric coefficient values decreased from 24 μC/cm², 0.000824, 338 ± 37 pm/V to 13 μC/cm², 0,00014 and 208 ± 27 pm/V, respectively for the undoped and 5 mol% Mn‐doped sample.     

Investigation on Resonant Vibration Performances of Fe‐Doped BiScO3–PbTiO3 Ceramics in High‐Temperature Environment

The high‐temperature performance of a series of Fe‐doped BiScO₃‐PbTiO₃ (BSPT) piezoelectric ceramics at the morphotropic phase boundary was investigated. The effects of different Fe contents on the piezoceramics were assessed with regard to variations in structure, morphology, dielectric properties, piezoelectric properties, and high‐temperature resonant vibration. X‐ray diffraction (XRD) results indicated that the Fe‐doped BSPT ceramics show a single perovskite structure and that the c/a ratio undergoes a slight increase with increasing Fe concentrations. It was also found that, as the proportion of Fe in the ceramics was increased, the grain size was enlarged somewhat, the dielectric loss (tan δ) decreased, the mechanical quality factor (Q_m) was gradually improved, and the Curie temperature (T_C) was increased from 426°C to approximately 460°C. Despite these complex effects, it was evident that Fe doping can improve the high‐temperature resonant vibration performance of BSPT ceramics, and that these materials exhibit stable resonant vibration velocities at temperatures as high as 225°C. Our results indicate that Fe‐doped BSPT ceramics have the potential to be used as piezoelectric power devices intended for high‐temperature environments.     

Microstructure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of Sc‐Modified BiFeO3–BaTiO3 Multiferroic Ceramics with MnO2 Addition

0.725BiFe_1?xSc_xO₃–0.275BaTiO₃ + y mol% MnO₂ multiferroic ceramics were fabricated by a conventional ceramic technique and the effects of Sc doping and sintering temperature on microstructure, multiferroic, and piezoelectric properties of the ceramics were studied. The ceramics can be well sintered at the wide low sintering temperature range 930°C–990°C and possess a pure perovskite structure. The ceramics with x/y = 0.01–0.02/1.0 sintered at 960°C possess high resistivity (~2 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 19.1–20.4 μm/cm²), good piezoelectric properties (d₃₃ = 127–128 pC/N, k_p = 36.6%–36.9%), and very high Curie temperature (618°C–636°C). The increase in sintering temperature improves the densification, electric insulation, ferroelectric, and piezoelectric properties of the ceramics. A small amount of Sc doping (x ≤ 0.04) and the increase in the sintering temperature significantly enhance the ferromagnetic properties of the ceramics. Improved ferromagnetism with remnant magnetization M_r of 0.059 and 0.10 emu/g and coercive field H_c of 2.51 and 2.76 kOe are obtained in the ceramics with x/y = 0.04/1.0 (sintered at 960°C) and 0.02/1.0 (sintered at 1050°C), respectively. Because of the high T_C (636°C), the ceramic with x/y = 0.02/1.0 shows good temperature stability of piezoelectric properties. Our results also show that the addition of MnO₂ is essential to obtain the ceramics with good electrical properties and electric insulation.     

Doping level effects in Nb self-doped Bi3TiNbO9 high-temperature piezoceramics with improved electrical properties

Nb self-doped Bi₃Ti_1-xNb_1+xO₉ (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1) high-temperature piezoelectric ceramics were fabricated through the conventional solid-state sintering method. The effects of different Nb self-doping levels on the microstructure, piezoelectric activities, and electrical conduction behaviors of these Nb self-doped Bi₃Ti_1-xNb_1+xO₉ ceramics were studied in detail. Large doping level effects on piezoelectric activity and resistivity were confirmed, which might be ascribed to the evolution of the crystal structure and the variations of the oxygen vacancy concentration and the grain anisotropy induced by Nb doping. An optimized piezoelectric coefficient (d₃₃) of 11.6 pC/N was achieved at x = 0.04 with a Curie temperature of 906°C. Additionally, an improved DC resistivity of 6.18 × 10⁵ Ω·cm at 600°C was acquired in this ceramic. Furthermore, the ceramic exhibited excellent thermal stability with the d₃₃ value maintaining 95% of its initial value after being annealed at 850°C for 2 hours. These results showed that Nb self-doped Bi₃Ti_1-xNb_1+xO₉ ceramics might have great potentials for high-temperature piezoelectric applications.     

Effects of cerium on structures and electrical properties of (Nb,Ta) modified Bi4Ti3O12 piezoelectric ceramics

Bi₄Ti₃O₁₂ high-temperature piezoelectric ceramics composed of 0.03 mol (Nb, Ta)⁵⁺ substituting B site and x mol CeO₂ (x = 0–0.05, abbreviated as BCTNT100x) substituting A site were synthesized by the conventional solid-state reaction method. The effects of Ce additive on the structures and electrical properties of resulting Bi₄Ti₃O₁₂-based ceramics were systematically investigated. In-situ temperature-dependent X-ray diffraction (XRD) confirmed that the phase structure of BCTNT100x ceramics change from orthorhombic structure to tetragonal structure as temperature increased. The ceramics at Ce content x = 0.03 illustrated optimal performances with superior piezoelectric constant (d₃₃ = 36.5 pC/N), high Curie temperature (T_C = 649 °C), and large remanent polarization (2P_r = 21.6 μC/cm²). BCTNT3 ceramics also possessed high d₃₃ of 32.5 pC/N at an annealing temperature of 600°C, with electrical resistivity preserved at 10⁶ Ω cm at 500 °C. These results demonstrate that BCTNT100x ceramics can be used as high-temperature piezoelectric devices.     

Electrocaloric behavior and piezoelectric effect in relaxor NaNbO3-based ceramics

We firstly reported the electrocaloric properties in relaxor (1−x−y)NaNbO₃–yBaTiO₃–xCaZrO₃ ceramics, and high electrocaloric effect (∆T ~0.451 K and∣∆T/∆E∣~0.282 Km/MV) can be realized in the ceramics (x = 0.04 and y = 0.10) under low temperature and low electric field. Relaxor behavior of NaNbO₃ ceramics can be found by doping both BaTiO₃ and CaZrO₃. In addition, optimized piezoelectric effects (d₃₃ ~235 pC/N and d₃₃* ~230 pm/V) can be observed in the ceramics (x = 0.04 and y = 0.10) due to the involved morphotropic phase boundary (MPB). Excellent piezoelectric effect (ie, d₃₃~330 pm/V at 41°C, and d₃₃*~332 pm/V at 60°C) can be found because of the characteristics of MPB. Good temperature reliability of piezoelectric effect can be shown because of both MPB and relaxor behavior. We believe that the ceramics with high electrocaloric effect and good piezoelectric effect can be considered as one of the most promising lead-free materials for piezoelectric devices.     

Preparation and characterization of Pb(Lu1/2Nb1/2)O3–Pb(In1/2Nb1/2)O3–PbTiO3 ternary ferroelectric ceramics with high phase transition temperatures

To explore new relaxor‐PbTiO₃ systems for high‐power and high‐temperature electromechanical applications, a ternary ferroelectric ceramic system of Pb(Lu_1/2Nb_1/2)O₃–Pb(In_1/2Nb_1/2)O₃–PbTiO₃ (PLN–PIN–PT) have been investigated. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the as‐prepared PLN–PIN–PT ceramics near the morphotropic phase boundary (MPB) were characterized. A high rhombohedral‐tetragonal phase transition temperature T_R‐T of 165°C and a high Curie temperature T_C of 345°C, together with a good piezoelectric coefficient d₃₃ of 420 pC/N, were obtained in 0.38PLN–0.20PIN–0.42PT ceramics. Furthermore, for (0.8?x)PLN–0.2PIN–xPT ceramics, the temperature‐dependent piezoelectric coefficients, coercive fields and electric‐field‐induced strains were further studied. At 175°C, their coercive fields were found to be above 9.5 kV/cm, which is higher than that of PMN–PT and soft P5H ceramics at room temperature, indicating PLN–PIN–PT ceramics to be one of the promising candidates in piezoelectric applications under high‐driven fields. The results presented here could benefit the development of relaxor‐PbTiO₃ with enhanced phase transition temperatures and coercive fields.     

Enhanced electrical properties of the polymorphic phase boundary on the tetragonal side in K0.48Na0.52NbO3-based lead-free piezoelectric ceramics

Herein, (0.95?x)K_0.48Na_0.52NbO₃-0.05SrTiO₃-xCaZrO₃ piezoelectric ceramics were prepared using a conventional solid sintering process, and their microstructures, phase structures, and ferroelectric, dielectric, and strain properties were studied. The crystal structure of the ceramics changed from the coexistence of an orthogonal–tetragonal phase on the orthogonal side at x = 0 to that on the tetragonal side at x = 0.02 by improving the orthogonal–tetragonal transition temperature (～20 °C) with increasing CaZrO₃ (abbreviated as CZ) doping. A high electric field–induced strain of 0.33% with a Curie temperature of T_c = 256 °C was obtained at x = 0.02 and was approximately two times that observed at x = 0. The dielectric constant and maximum polarization were the highest at x = 0.02 in this (0.95?x)K_0.48Na_0.52NbO₃-0.05SrTiO₃-xCaZrO₃ system. These materials would be promising lead-free ceramics in the future.     

Colossal permittivity in Ta-doped SrTiO3 ceramics induced by interface effects and defect structure: An experimental and theoretical study

The lack of systematic research on the phase structure, defect structure, and polarization mechanism hinders the full comprehension of the colossal permittivity (CP) behavior for SrTiO₃-based ceramics. For this purpose, Ta-doped SrTiO₃-based ceramics were synthesized in an N₂ atmosphere with a traditional method. When the appropriate amount of Ta was doped, colossal permittivity (ԑ_r ∼ 62505), low dielectric loss (tanδ ∼ 0.07), as well as excellent temperature stability (−70 °C–180 °C, ΔC/C_25°C ≤ ±15%) were obtained in the Sr_0.996Ta_0.004TiO₃ ceramic. The relationship between Ta doping, polarization mechanism, and dielectric performance was systematically researched according to experimental analysis and theoretical calculations. The first-principle calculations indicate that the Ta⁵⁺ ion prefers to replace the Sr-site. The defect dipoles and oxygen vacancies formed by heterogeneous-ion doping play an active role in regulating the dielectric performance of ceramics. In addition, the interface barrier layer capacitance (IBLC) effect associated with semi-conductive grains and insulating grain boundaries is the primary origin of colossal permittivity for Sr_1-xTa_xTiO₃ ceramics. The polarization mechanism and defect structure proposed in the study can be extended to the research of SrTiO₃ CP ceramics. The results have a good development prospect in colossal permittivity (CP) materials.     

Phase transition,microstructure and electrical properties of Fe doped Ba0.70Ca0.30TiO3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics of Ba_0.70Ca_0.30Ti_1?xFe_xO₃ (x=0–0.03) have been synthesized by a conventional solid state reaction method. The influence of Fe content on the microstructure, phase transition, dielectric, ferroelectric, and piezoelectric properties is investigated systematically. The ceramics with x≤0.02 are diphasic composites of tetragonal Ba_0.80Ca_0.20TiO₃:Fe and orthorhombic Ba_0.07Ca_0.93TiO₃:Fe solid solutions. The tetragonal phase is gradually suppressed as x increases, the ceramic with x=0.03 is found to have diphasic pseudocubic and orthorhombic phases. And the grain size is dependent on Fe content significantly. Introduction of Fe at B-sites improves the densification and decreases the sintering temperature. As x increases from 0 to 0.03, the room temperature relative dielectric permittivity enhances, dielectric loss decreases, and the Curie temperature decreases monotonically from 128 °C to 58 °C. However, the ferroelectricity enhances slightly and reaches the maximum near x=0.005, and then weakens with increasing x. On the other hand, the piezoelectric coefficient (d₃₃) and the electromechanical coupling coefficient (k_p) decrease simultaneously with increasing x, whereas the mechanical quality factor (Q_m) increases significantly. The structure–electrical properties relationship is discussed intensively to give more information on (Ba,Ca)TiO₃-based lead-free piezoelectric ceramics.     

Effect of different ionic valence state doping on the structure and characteristic of BiFeO3-BaTiO3-based ceramics

BiFeO₃-BaTiO₃-based ceramics are promising multiferroic materials for a wide range of applications. In this paper, the effects of different ionic valence state((Ga_0.5Ta_0.5)⁴⁺, Ta⁵⁺) doping on the structure and properties of 0.73BiFeO₃-0.27BaTi_1-y(Ga_1-xTa_x)_yO₃ ceramics were investigated. X-ray diffraction analysis showed that all samples were determined by rhombohedral R3c phase and tetragonal P4mm phase. A frequency-independent dielectric anomaly with obvious thermal hysteresis was detected in all samples, indicating the first-order ferroelectric phase transition, and the Curie temperatures were all above 600°C. The ferroelectric analysis found that the doping of donor element Ta reduced the coercive field, with a slight decrease of remanent polarization, which can be attributed to the soft effect of Ta element. Meanwhile, the magnetic properties were enhanced for all samples, with a maximum in 15T (x = 1, y = .015) sample, where M_r = .13 emu/g. According to relevant analysis, high-valence element substitution can enhance the magnetic properties and reduce the coercive field of BiFeO₃, while low-valence element substitution can reduce dielectric loss. This result points out a way for us to choose appropriate doping elements to improve the performance of BiFeO₃ ceramics.     

Improvement of microwave dielectric properties of the LiNb0.6Ti0.5O3 M-phase by doping with (Co1/3Nb2/3)4+

Structural evolution and microwave dielectric properties of LiNb_0.6(Ti_1-x[Co_1/3Nb_2/3]_x)_0.5O₃ (.05≤x≤.2) ceramics have been studied in this paper. Although the doped compositions maintain the M-phase solid solutions, compositional fluctuation due to nonuniform dispersion of minor dopants could be observed as x < .05, and trace amount of Li₂TiO₃-based solid solution (Li₂TiO₃ss) secondary phase presents in the x > .05 compositions. The microwave dielectric properties could be remarkably improved by the doping of (Co_1/2Nb_1/2)⁴⁺ in comparison to the undoped counterpart. Optimized microwave dielectric properties with Q × f = ∼6500 GHz, ε_r = ∼74 and τ_f = +8.2 ppm/°C could be obtained at x = .10 after sintering at 1050°C/2 h. The sintering temperature could be further reduced to 900°C/2 h by adding .2 wt% B₂O₃ without affecting significantly its microwave dielectric properties: ε_r = 73, Q × f = 6000 GHz, τ_f = +8.5 ppm/°C. The LiNb_0.6(Ti_1-x[Co_1/3Nb_2/3]_x)_0.5O₃ ceramics obtained in this case exhibit large dielectric permittivity coupled with much improved Q × f values, near zero τ_f, and low sintering temperature simultaneously, which makes it a promising high-k microwave dielectric material for low temperature cofired ceramic applications.     

High-temperature dielectric and relaxation behavior of Yb-doped Bi0.5Na0.5TiO3 ceramics

Microstructure, phase transition and dielectric properties of Yb-doped Bi_0.5Na_0.5TiO₃ (BNT) ceramics were investigated. It is found that ytterbium promotes the grain growth and densification of the ceramics while Ti-rich impurity appears due to the compensation of Ti-vacancy. The dielectric operational temperature range of the ceramics with a±15% tolerance was greatly broaden until 500 °C by ytterbium doping. Meanwhile, the diffuseness of the diffuse phase transition increases with the increase of doping Yb. BNT ceramics with 3 mol% Yb doping shows a near-plateau dielectric behavior in a broad temperature range from 147 to 528 °C and a low dielectric loss (<0.025) from 154 to 356 °C, indicating that it is a promising material for applications in high-temperature capacitor.     

Phase,domain, and microstructures in Sr2+ substituted low-temperature sintering PZT-based relaxor ferroelectrics

The Ag-Pd internal electrode of multilayer piezoelectric ceramics needs to be sintered below 1000°C, and lead wires and components need to be welded with lead-free solder at 260°C. PNN–PMW–PZT–xSr piezoelectric ceramics with high Curie temperature (T_c > 260°C) were synthesized at a low sintering temperature (960°C) to meet the requirements of multilayer piezoelectric devices. The relationship between structures (phase, domain, and microstructures) and electrical properties (piezo/ferroelectric properties, and dielectric relaxation) in the Sr²⁺ substituted ceramics was investigated. Rietveld refinement and Raman spectra show that Sr²⁺ substitution can cause the phase change and increase the force constant of [BO₆] octahedron. The piezoelectric response increases with increasing the content of the tetragonal phase (CTP) in the rhombohedral-tetragonal (R-T) coexisted ceramics. The ceramics with 0.6 mol% Sr²⁺ substitution have minimum activation energy for domain wall movement (E_a) of 0.0362 eV which favors the formation of nanometer-sized domains, and possess excellent electrical properties (d₃₃ = 623 pC/N, d₃₃^* =783 pm/V, T_c =295°C). The higher the CTP, the lower the E_a. The lower E_a favors the rotation of polarization direction and extension, and is beneficial to the generation of the nanometer-size domains, resulting in high piezoelectric properties.     

Remarkable piezoelectricity and stable high‐temperature dielectric properties of quenched BiFeO3–BaTiO3 ceramics

Effects of quenching process on dielectric, ferroelectric, and piezoelectric properties of 0.71BiFeO₃?0.29BaTiO₃ ceramics with Mn modification (BF–BT?xmol%Mn) were investigated. The dielectric, ferroelectric, and piezoelectric properties of BF–BT?xmol%Mn were improved by quenching, especially to the BF–BT?0.3 mol%Mn ceramics. The dielectric loss tanδ of quenched BF–BT?0.3 mol%Mn ceramics was only 0.28 at 500°C, which was half of the slow cooling one. Meanwhile, the remnant polarization P_r of quenched BF–BT?0.3 mol%Mn ceramics increased to 21 μC/cm². It was notable that the piezoelectric constant d₃₃ of quenched BF–BT?0.3 mol%Mn ceramics reached up to 191 pC/N, while the T_C was 530°C, showing excellent compatible properties. The BF–BT?xmol%Mn system ceramics showed to obey the Rayleigh law within suitable field regions. The Rayleigh law results indicated that the extrinsic contributions to the dielectric and piezoelectric responses of quenched BF–BT?xmol%Mn ceramics were larger than the unquenched ceramics. These results presented that the quenched BF–BT?xmol%Mn ceramics were promising candidates for high‐temperature piezoelectric devices.     

Ultra‐Wide Temperature Stable Dielectrics Based on Bi0.5Na0.5TiO3–NaNbO3 System

The microstructure, phase structure, ferroelectric, and dielectric properties of (1?x)Bi_0.5Na_0.5TiO₃‐xNaNbO₃ [(1?x)BNT‐xNN] ceramics conventionally sintered in the temperature range of 1080°C–1120°C were investigated as a candidate for capacitor dielectrics with wide temperature stability. Perovskite phase with no secondary impurity was observed by XRD measurement. With increasing NN content, (1?x)BNT‐xNN was found to gradually transform from ferroelectric (x = 0–0.05) to relaxor (x = 0.10–0.20) and then to paraelectric state (x = 0.25–0.35) at room temperature, indicated by P–I–E loops analysis, associated with greatly enhanced dielectric temperature stability. For the samples with x = 0.25–0.35, the temperature coefficient of capacitance (TCC) was found <11% in an ultra‐wide temperature range of ?60°C–400°C with moderate dielectric constant and low dielectric loss, promising for temperature stable capacitor applications.     

Effect of Ce3+ doping on phase and microwave dielectric properties of 0.94MgTiO3−0.06(Ca0.8Sr0.2)TiO3 ceramics

In this study, 0.94Mg_(1-3x/2)Ce_xTiO₃−0.06(Ca_0.8Sr_0.2)TiO₃ (MCe_xT−CST, 0≤x≤0.01) composite ceramics were prepared at a low temperature of 1175°C by using the 50-nm-sized powders. The effects of Ce³⁺ doping on crystalline phase, microstructure, and microwave dielectric properties of MCe_xT−CST were studied. A main ilmenite (Mg,Ce)TiO₃ phase and a minor perovskite (Ca_0.8Sr_0.2)TiO₃ phase coexist well with the appearance of impurity MgTi₂O₅ phase in MCe_xT−CST. The dielectric properties of MCe_xT−CST are affected by the molecular polarizability, the impurity phase, and the Ce³⁺ doping. The replacement of Mg²⁺ by high valence Ce³⁺ could effectively inhibit the formation of oxygen vacancy, resulting in the enhancement of Q×f. When x = 0.005, MCe_xT−CST exhibits microwave dielectric properties with a moderate ε_r of 21.5, a high Q×f of 67 000 GHz, and a near-zero τ_f of −0.74 ppm/°C. The results reveal that the Ce³⁺ substitution is a prospective approach to optimize the microwave dielectric properties of MgTiO₃-based ceramics.     

Photoluminescence and Temperature Dependent Electrical Properties of Er‐Doped 0.94Bi0.5Na0.5TiO3‐0.06BaTiO3 Ceramics

Er‐doped 0.94Bi_0.5Na_0.5TiO₃‐0.06BaTiO₃ (BNT‐6BT: xEr, x is the molar ratio of Er³⁺ doping) lead‐free piezoceramics with x = 0–0.02 were prepared and their multifunctional properties have been comprehensively investigated. Our results show that Er‐doping has significant effects on morphology of grain, photoluminescence, dielectric, and ferroelectric properties of the ceramics. At room temperature, the green (550 nm) and red (670 nm) emissions are enhanced by Er‐doping, reaching the strongest emission intensity when x = 0.0075. The complex and composition‐dependent effects of electric poling on photoluminescence also have been measured. As for electrical properties, on the one hand, Er‐doping tends to flatten the dielectric constant‐temperature (ε_r‐T) curves, leading to temperature‐insensitive dielectric constant in a wide temperature range (50°C–300°C). On the other hand, Er‐doping significantly decreases the ferroelectric‐relaxor transition temperature (T_F–R) and depolarization temperature (T_d), with the T_F–R decreasing from 76°C to 42°C for x = 0–0.02. As a result, significant composition‐dependent electrical features were found in ferroelectric and piezoelectric properties at room temperature. In general, piezoelectric and ferroelectric properties tend to become weaker, as confirmed by the composition‐dependent piezoelectric coefficient (d₃₃), planar coupling factor (k_p), and the shape of polarization‐electric field (P–E), current‐electric field (J–E), bipolar/unipolar strain‐electric field (S–E) curves. Furthermore, to understand the relationship between the T_F–R/T_d and the electrical properties, the composition of x = 0.0075 has been intensively studied. Our results indicate that the BNT‐6BT: xEr with appropriate Er‐doping may be a promising multifunctional material with integrated photoluminescence and electrical properties for practical applications.     

Structural,dielectric, and piezoelectric properties of Ce-doped Bi7Ti4.2Ta0.3W0.5O21 intergrowth ferroelectric ceramics

The Bi_7-xCe_xTi_4.2Ta_0.3W_0.5O₂₁ (BTTW-BITT-xCe, x = 0.05, 0.10, 0.15, 0.20) ceramics were studied as potential materials for high-temperature applications. The microstructure, dielectric, piezoelectric and ferroelectric properties of Ce doped BTTW-BITT samples were analyzed in detail. The results indicated that an appropriate amount of Ce ion doping could inhibit the growth of grains, suppress the relaxation peak, reduce high-temperature dielectric losses, and greatly improve the piezoelectric activities. The optimal ceramics was obtained at x = 0.15, which possessed a maximum piezoelectric constant of d₃₃ = 23.4 pC/N, a high Curie temperature of 713 °C, a loss value of 6% at 500 °C, and a favorable thermal stability of d₃₃ = 21.1 pC/N (90% of the initial value) at 500 °C. This result indicates that BTTW-BITT-0.15Ce has great potential for applications in the high temperature fields. In addition, XPS results showed that there were two Ce valences states, Ce³⁺ and Ce⁴⁺present in the BTTW-BITT-xCe ceramics.     

High‐Performance Small‐Amount Fe2O3‐Doped (K,Na)NbO3‐Based Lead‐Free Piezoceramics with Irregular Phase Evolution

[(K_0.43Na_0.57)_0.94Li_0.06][(Nb_0.94Sb_0.06)_0.95Ta_0.05]O₃ + x mol% Fe₂O₃ (KNLNST + x Fe, x = 0~0.60) lead‐free piezoelectric ceramics were prepared by conventional solid‐state reaction processing. The effects of small‐amount Fe₂O₃ doping on the microstructure and electrical properties of the KNLNST ceramics were systematically investigated. With increasing Fe³⁺ content, the orthorhombic‐tetragonal polymorphic phase transition temperature (T_O‐T) of KNLNST + x Fe ceramics presented an obvious “V” type variation trend, and T_O‐T was successfully shifted to near room temperature without changing T_C (T_C = 315°C) via doping Fe₂O₃ around 0.25 mol%. Electrical properties were significantly enhanced due to the coexistence of both orthorhombic and tetragonal ferroelectric phases at room temperature. The ceramics doped with 0.20 mol% Fe₂O₃ possessed optimal piezoelectric and dielectric properties of d₃₃ = 306 pC/N, k_p = 47.0%, = 1483 and tan δ = 0.023. It was revealed that the strong internal stress in the KNLNST + x Fe ceramics with higher Fe³⁺ contents (x = 0.40, 0.60) stabilized the orthorhombic phase, leading to the irregular “V” type rather than the usually observed monotonic phase transition with composition change in the ceramics.