共查询到17条相似文献,搜索用时 93 毫秒
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本文以硝酸银(AgNO3)为银源,乙二醇(EG)为还原剂和溶剂,聚乙烯吡咯烷酮(PVP)为生长导向剂,氯化铜(CuCl2)为晶型诱导剂,采用多元醇还原法制取银纳米线.通过SEM、TEM、XRD、XPS和UV?vis等测试方法,分析了银纳米线的生长机制,并探讨了PVP辅助银纳米线定向生长的具体原理.研究结果表明,银纳米结构是在五边孪晶晶种上定向生长为一维的纳米线,PVP中的氧原子会与纳米银表面的银原子产生强烈的相互作用来控制着银纳米线的单向生长过程,并且当PVP与AgNO3的摩尔浓度比为6时可制取形貌规整、长度超过60 um的银纳米线. 相似文献
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银纳米线是制作纳米光电子器件的理想材料,了解银纳米线与特定衬底间的摩擦特性对于器件的设计和制备工艺具有重要参考价值.本文利用原子力显微镜(AFM)研究银纳米线与二氧化硅衬底表面的摩擦特性,为提高摩擦力测量准确性,依次借助斜面法和横向力曲线分别标定了AFM探针的扭转弹性常数和光杠杆横向灵敏度,同时对扫描器引入的横向误差进行了补偿.利用AFM纳米操纵技术记录了单根银纳米线由静止到整体滑动的全过程,实验测得直径50 nm银纳米线与二氧化硅衬底表面的最大静摩擦线密度和滑动摩擦线密度分别为1.07 nN/nm和0.56 nN/nm. 相似文献
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基于气液固(VLS)反应机制,采用厚度为2~3 nm的金属镍作为催化剂,金属镓和氨气分别用作Ⅲ族和Ⅴ族的生长源,在自行改造的化学气相沉积(CVD)设备内获得了大面积GaN纳米线。通过扫描电镜(SEM)、能量分散X射线荧光(EDX)谱和透射电镜(TEM)测试,表明GaN纳米线的成核及生长与反应室气路结构有密切关系,水平弯管式气路将有利于GaN纳米线的生长。此外,生长气流将直接影响GaN纳米线的生长状况,生长温度为920℃、NH3和N2的气流量分别为100和500 cm3/min时,可以获得形貌较好的纳米线。同时,探索了Ga源与样品位置间的距离对纳米线中Ga和N的质量分数的影响,并分析了其影响机理。 相似文献
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本文报道了金辅助生长纯闪锌矿结构GaAs纳米线,它采用金属有机化学气相沉淀技术运用气-液-固生长机制在GaAs(111)B衬底上生长而形成。实验结果显示GaAs纳米线具有圆柱状的均匀形貌,并且生长速率与直径无关。透射电子显微镜研究显示,GaAs纳米线是无缺陷的纯闪锌矿结构的晶体。实验结果表明Au-Ga合金在纳米线生长过程中是作为热解催化剂而不是扩散原子的收集器,较大的催化剂直径以及催化剂液滴中高的过饱和度是得到等高生长的纯闪锌矿结构GaAs纳米线的原因。 相似文献
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采用热分解ZnO粉末法,以Au为催化剂,在Si(100)衬底上外延生长了ZnO纳米线阵列。用扫描电子显微镜(SEM)分析表明:ZnO纳米线的直径在100nm左右,长度约3μm,与衬底表面的夹角约为70.5°,纳米线具有四个特定的倾斜方向A,B,C,D。X射线衍射(XRD)图谱上只有ZnO(0002)衍射峰,说明ZnO纳米线沿C轴择优生长。结合Si与ZnO的晶格结构特征,理论研究得出ZnO纳米线与Si基片的晶格匹配关系为:[0001]_(ZnO)∥[114]_(Si),[0001]_(ZnO)∥[■■4]_(Si),[0001]_(ZnO)∥[1■4]_(Si),[0001]_(ZnO)∥[■14]_(Si),失配度为1.54%。得出了Si(100)衬底对ZnO纳米线生长方向具有控制作用的结论。 相似文献
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A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. 相似文献
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The intergrowth mechanism of silicon nanowires and silver dendrites formed by electroless metal deposition has been investigated
by scanning electron microscopy. A self-assembled localized microscopic electrochemical cell model can adequately describe
the self-organized Si nanowires growth. Using these in situ prepared Si nanowire arrays as templates, a diffusion-limited
aggregation process is proposed to explain the formation of the silver dendritic nanostructures. 相似文献
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《Materials Science in Semiconductor Processing》2012,15(4):428-431
Based on the catalytic property of gold, seemingly oriented amorphous SiO2 nanowires were synthesized by radio frequency (RF) magnetron sputtering technique and annealing at 1100 °C for 40 min in the presence of a nitrogen flow using Silicon(Si) powder as the Si source. The length and diameter of nanowires growth are almost uniform, which are about 30 μm and 35 nm respectively. The growth of nanowires is consistent with vapor–liquid–solid mechanism, with Au particles being observed to remain at the tip of nanowires. They were characterized by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and photoluminescence. A sharp intensive green emission peak at around 519 nm was observed with an excitation wavelength of 325 nm;this has been ascribed to an oxygen deficiency. 相似文献
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为了快速制备具有优良场发射性能的ZnO纳米线,对ZnO纳米线的生长机理及场发射性能进行研究。首先采用优化的两步法制备出高长径比的ZnO纳米线,其次采用SEM对ZnO的微观形貌进行表征,然后,在分析形貌特点的基础上,说明了强碱体系下ZnO纳米线薄膜的快速生长机理。最后,对典型样品的场发射性能进行了测试。测试果表明,优化后的两步法,只需3h即可获得直径为40~50nm,长度为2.2~2.7μm,长径比高达54的纳米线。薄膜的开启电场为3.6V/μm,阈值场强为9.1V/um,场增强因子β高达3 391。研究表明,高pH值溶液可以加快ZnO纳米线沿C轴方向的择优生长,获得高长径比的ZnO纳米线,进而获得优良的场发射性能。 相似文献
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用改进的Hummer法制备了氧化石墨烯(GD),并制备 了表面用聚乙烯吡咯烷酮修饰的纳米银线(AgNWs), 通过原位还原法将二者复合成一种新型的水溶性AgNWs/还原石墨烯(RGD)材料,克服了石 墨烯材料不易分散 的缺点。用X射线衍射(XRD)、紫外-可见分光(UV-vis)光度计、扫描电子显 微镜(SEM)和傅里 叶变换红外(FT-IR)光谱分析仪对样品结构和形貌进行了表征。结果表明,制备的AgNWs/RG D材料具有与前驱 体不同的物理参数,有望在非线性光学、光电传感器和生物抑菌等方面有良 好的表现。 相似文献
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Ronghui QUE 《中国光电子学前沿》2011,(2)
Large-scale, high-purity and uniform silver orthophosphate (Ag3PO4) nanowires had been synthesized by a facile hydrothermal method without employing any surfactants or templates for the first time. The nanowires were single-crystalline with lengths up to several micrometers. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy were used to characterize the morphology and structure of the as-prepared products. The as-prepared Ag3PO4 nanowires exhibited linear current-voltage (Ⅰ-Ⅴ) characteristics and excellent photoresponse. As the light was switched on and off, the currents could be reversibly switched between high and low value at the voltage of 0.1 V, which will find wide application in optoelectronic nanodevices. 相似文献
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随着时代的发展,柔性电子产品的应用越来越广。柔性透明导电薄膜是柔性电子器件中的重要组成部分,由于氧化铟锡并不适合应用到柔性电子器件中,寻找新一代材料引起了研究者的广泛关注。纳米银线作为一种新型的纳米材料,在纳米尺度上有很多新奇的性能,其优良的导电性及良好的光学性能被认为是替代氧化铟锡的最佳材料。本文主要综述了纳米银线柔性导电薄膜的研究进展,主要包括纳米银线导电油墨的物化性能、纳米银线柔性透明导电薄膜的常用制备方法以及主要应用领域。此外,还结合国内外纳米银线柔性透明导电膜的研究现状,指出该研究方向仍存在的一些挑战。 相似文献