基于羟基磷灰石的QCM湿度传感器研究

随着物联网信息化技术的发展,湿度传感器检测精度的要求越来越高,研究具有更好湿敏特性的材料变得日益重要.采用溶胶凝胶法制备了一种具有均匀棒状结构、绿色无毒的羟基磷灰石纳米材料,并将其负载在石英晶体微天平(QCM)上,构筑了高稳定性和敏感性的湿度传感器.通过测量QCM的共振频移,研究了所构筑传感器的湿敏特性,其共振频移源于...     

基于能量传输模型的QCM负载效应研究

为准确、有效地区分引起石英晶体微天平(QCM)频偏的质量效应与阻尼效应,运用能量传输模型(ETM)的基本原理,推导出液体粘度和密度的乘积与石英晶体谐振器表面最大的振动幅度之间的显性函数关系式。可通过测试QCM的谐振频率与幅值信息将其负载效应分开,为QCM免疫传感器在医学中的诊断提供了一种理论基础。     

SBA-15薄膜修饰QCM湿度传感器的三维有限元建模与仿真

本文对基于SBA-15的QCM湿度传感器进行了三维有限元精确建模与数值仿真,分析了SBA-15湿敏薄膜材料对传感器的振动模态、中心频率、电学阻抗及Q值等性能参数的影响,为纳米湿敏薄膜的成膜工艺及新型QCM湿度传感器的优化设计与制造提供了重要的理论参考依据。     

基于QCM的水果中金属离子检测方法研究

以压电石英晶体的波动方程作为理论基础,首先推导了气相条件下石英晶体微天平(QCM)传感器的相位 质量关系式。然后以猕猴桃中Cu2+检测为例,分别测量出QCM传感器对应的频率偏移量及相位偏移量,应用Sauerbrey方程和新推导的相位——质量方程,计算出猕猴桃中Cu2+的含量;最后,将这两种方法的实验结果进行分析比较并进行了相关讨论。结果表明,基于压电QCM相位检测原理的金属离子检测也是一种有效的金属离子检测方法。     

具有ITO电极的QCM设计与性能研究

为了提高石英晶体微天平(QCM)的检测灵敏度,提出了一种具有氧化铟锡(ITO)电极结构的QCM。利用有限元分析软件在QCM芯片电极区采用密度等效法实现计算量的简化,在通过电极尺寸优化得到具有理想能陷效应的QCM的基础上,采用控制磁控溅射的气体压强、工作电压、电流等方法,得到具有导电性好,平滑度高,透光性优良的ITO电极。经振荡频率测试及质量灵敏度分析计算表明,ITO电极的QCM频率稳定性良好(频率变化仅3 Hz),质量灵敏度是金电极QCM的1.5倍。     

基于氧化石墨烯-聚乙烯醇薄膜的光纤光栅湿度传感器

为提高光纤布拉格光栅(fiber Bragg grating,FBG)对环境湿度的敏感性,本文提出将氧化石墨烯-聚乙烯醇溶液涂覆在FBG上进行湿度增敏。首先对传感器的湿度响应进行了理论研究,然后使用提拉镀膜法制作了传感器样品,实验讨论了湿敏溶液的混合比例和薄膜厚度对湿度灵敏度的影响。进一步的实验研究结果表明:当氧化石墨烯和聚乙烯醇溶液的混合比例为9∶1,涂覆 厚度为89 μm时,在相对湿度 50%—60%RH(relative humidity)的 湿度范围内,传感器的湿度灵敏度为2.3 pm/%RH;在60%—70%RH的 湿度范围内,传感器的湿度灵敏度为7.7 pm/%RH;在70%—80% RH的湿度范围内,湿度灵敏度为47.2 pm/%RH。传感器的温度灵敏度为13.2 pm/℃,湿度测量的不稳定性为0.064 7% RH,响应和 恢复时间分别为0.84 s和11.46 s。该传感器制作简便、湿度灵敏度高、稳定性好,具有较大的应用潜力。     

QCM传感器差频信号的获取

分析研究了石英晶体微天平(QCM)传感器的工作原理.针对其敏感元件的晶片可能会受到不同因素的影响而导致输出稳定性下降的特点,介绍了利用D触发器产生差频提取频率信号的方法.降低了因环境因素对传感器造成的影响、抑制了频率漂移,提高了微天平的稳定性,使传感器的性能得到明显提高.     

具有质量和电化学复合敏感效应的新型QCM生物传感器研究

石英晶体微天平(QCM)是一种传统的质量敏感型传感器,具有灵敏度高及响应时间短等优点。为拓展QCM技术在液相生物分子传感领域的应用,该文通过电化学方法在QCM表面沉积生物分子功能化的导电高分子后,成功制备了链霉亲和素敏感的QCM传感器。该传感器不仅具有对链霉亲和素的质量和电化学复合敏感效应,而且具有优异的抗其他蛋白干扰能力,有进一步应用于液相生化传感和疾病检测的潜力。     

基于PVDF/GO纳米复合薄膜的柔性压电传感器

为了解决有机柔性压电传感器压电输出较小的问题,设计了一种基于聚偏氟乙烯(PVDF)掺杂氧化石墨烯(GO)的柔性压电传感器.介绍了该传感器的制备方法,对比了有无掺杂GO对传感器压电输出性能的影响,并且分别对它们进行了相关测试.结果表明,掺杂质量分数0.5％的GO后,PVDF中的p相结晶度提升了16.7％,且传感器具有更高...     

压电免疫传感器的质量灵敏度分布优化设计

从石英晶体微天平(QCM)质量灵敏度表达式出发,分析了影响其质量灵敏度分布的因素。在此基础上设计了一种新型电极配置结构的QCM,并利用9MHz的QCM仿真。仿真结果显示,在全电极区域,新型电极结构比圆形电极结构的QCM质量灵敏度分布均匀。最后,采用10 MHz的QCM免疫传感器对卵巢癌进行了实验验证,结果表明,NuTu-19抗体质量在74³70ng内,频率呈线性变化,说明改进电极结构的QCM免疫传感器具有较好的质量灵敏度分布。     

Resistive humidity sensor based on vanadium complex films

A resistive-type relative humidity （RH） sensor based on vanadium complex （VO2（3-f[）） film is reported in this study. Gold electrodes were deposited on the glass substrates in a co-planar structure. A thin film of vanadium complex was coated as a humidity-sensing material on the top of the pre-patterned electrodes. The humidity-sensing principle of the sensor was based on the conductivity change of coated sensing element upon adsorption/desorption of water vapor. The resistance of the humidity sensor measured at 1 kHz decreased linearly with increasing the humidity in the range of 35%-70% RH. The overall resistance of the sensor decreases 11 times. An equivalent circuit for the VO2（3-fl） based resistive-type humidity sensor was developed. The properties of the sensor studied in this work make it beneficial for use in the instruments for environmental monitoring of humidity.     

Novel capacitance-type humidity sensor based on multi-wall carbon nanotube/SiO2 composite films

A novel capacitance-type relative humidity (RH) sensor based on multi-wall carbon nanotubc/SiO2 (MWCNTs/SiO2) composite film is reported.Details of the fabrication process,possible sensing mechanism and sensing characteristics,such as linearity and sensitivity,are described.The capacitance of the MWCNTs/SiO2 composite film shows typical concentration percolation behavior with increasing MWCNT loading.At loadings below the percolation threshold (1.842wt％),the sensor capacitance increases obviously with increasing MWCNTs.The water condensed in the MWCNTs/SiO2 layer can lower the percolation threshold and increase the sensor capacitance.The sensor with MWCNT concentration of 1 wt％ has the best properties.The sensor has a humidity sensitivity of about 673 pF/％ RH and a linearity correlation of 0.98428.The response time of the sensor to RH is about 40 s and the recovery time is about 2 s.     

基于多壁碳纳米管/SiO2复合材料检测的新型电容型碳纳米管湿度传感器

A novel capacitance-type relative humidity(RH) sensor based on multi-wall carbon nanotube/SiO_2 (MWCNTs/SiO_2) composite film is reported.Details of the fabrication process,possible sensing mechanism and sensing characteristics,such as linearity and sensitivity,are described.The capacitance of the MWCNTs/SiO_2 composite film shows typical concentration percolation behavior with increasing MWCNT loading.At loadings below the percolation threshold(1.842wt%),the sensor capacitance increases obviously with i...     

Ultrathin free-standing graphene oxide film based flexible touchless sensor

Ultrathin free-standing graphene oxide (GO) films were fabricated by vacuum filtration method assisted with Ni(OH)2 nanosheets as the sacrifice layer.The surface of the obtained GO film is very clean as the Ni(OH)2nanosheets can be thoroughly etched by HC1.The thickness of the GO films can be well-controlled by changing the volume of GO dispersion,and the thinnest GO film reached ～12 nm.As a novel and transparent dielectric material,the GO film has been applied as the dielectric layer for the flexible touchless capacitive sensor which can effectively distinguish the approaching of an insulator or a conductor.     

基亏FPGA的QCM湿度测量系统程序设计与仿真

为了实时检测常温下的湿度,以便负责人根据需要调整环境状态。采用测频计数法结合频差法设计了以FPGA芯片（EP2CSQ208C8N）为基础的可用于湿度测量的石英晶体谐振频率漂移检测电路。重点介绍在FPGA平台上通过测量石英晶体的谐振频率来间接测量湿度的方法,讨论了FPGA平台上的每个模块的设计过程,给出了部分模块和整体电路的仿真图,解释了仿真结果。FPGA参与外围硬件电路的辅助设计,会使设计更加简单,周期更短。     

Flexible transparent conductive film based on silver nanowires and reduced graphene oxide

Silver nanowires (AgNWs) with diameter of 90—150 nm and length of 20—50 μm were successfully synthesized by a polyol process. Graphene oxide (GO) was prepared by Hummers method, and was reduced with strong hydrazine hy-drate at room temperature. The flexible transparent conductive films (TCFs) were fabricated using the mixed cellulose eater (MCE) as matrix and AgNWs and reduced graphene oxide (rGO) as conductive fillers by the improved vacuum fil-tration process. Then, the optical, electrical and mechanical properties of the AgNWs-rGO films were investigated. The results show that for the AgNWs-rGO film produced with the deposition densities of AgNWs and rGO as 110 mg·m-2 and 55 mg·m-2, the optical transmission at 550 nm is 88.4% with Rs around 891 Ω·sq-1, whereas the optical transmission for the AgNWs-rGO film with deposition densities of AgNWs and rGO of 385 mg·m-2 and 55 mg·m-2 is 79.0% at 550 nm with Rs around 9.6 Ω·sq-1. There is little overt increase in Rs of the AgNWS-rGO film after tape tests for 200 times. The bending test results indicate that the change in Rs of AgNWs-MCE film is less than 2% even after 200 cycles of compressive or tensile bending. The excellent mechanical properties of the AgNWs-rGO film can be attributed to the burying of AgNWs and rGO at the surface of MCE     

Effect of characteristic properties of graphene oxide on reduced graphene oxide/Si schottky diodes performance

We investigated the effect of the size of graphene oxide (GO) sheets made with two different types of GO solution on the performance of Si-based solar cells. Large-sized reduced GO (rGO) with an in-plane crystalline diameter of 3.42 nm has smaller defect sites and thus the Si/rGO Schottky junction solar cell shows a lower leakage current than the solar cell with small-sized rGO (i.e. an in-plane crystalline diameter of 3.03 nm). Enhanced open-circuit voltage (V_oc) and improved short-circuit current (J_sc) are observed for the solar cell with large-sized rGO due to the increased work function and Schottky barrier height at the Si and rGO junction. In other words, an increased built-in potential and a wider depletion region of the solar cell with large-sized rGO contribute to the increased carrier absorption and generation. These findings indicate that (i) rGO acts as a good transparent conducting layer and hole-transporting layer, and (ii) the control of rGO size in Si/rGO Schottky junction solar cell is important to improve the performance.     

Infrared response of vanadium oxide (VOx)/SiNx/reduced graphene oxide (rGO) composite microbolometer

Much attention has been paid to the photoresponse of vanaduim oxide (VO_x) and amorphous silicon based microbolometer for long-wavelength infrared detection under un-cooled operation condition in recent decades. However, the outstanding physical and chemical properties of graphene and reduced graphene oxide (rGO) stimulate their potential for use in light-sensitive applications. Much less attention has been paid to investigate the performance on long-wavelength infrared detection of microbolometer using reduced graphene oxide/SiN_x/vanadium oxide composite films deposited on under room temperature operation. In the research, we have proposed the novel microbolometer based on VO_x/SiN_x/rGO composite films replace the as-deposited VO_x based microbolometer. It is noted that such extraordinary properties (high responsivity: 18,130 V/W and low NETD: 43.32 mK) of the VO_x/SiN_x/rGO composite presented here encourage us to contemplate on this protocol for next generation optoelectronic device engineering for infrared detection.