氧化钌/活性炭超电容器电极材料电化学特性

介绍一种氧化钌/活性炭复合电极材料的制备方法,并对不同条件下制备的材料的循环伏安特性、交流阻抗特性进行了比较。使用该复合材料组装的模拟电化学超电容器单电极比容量达到359 F/g,远高于普通活性炭材料。与氧化钌电极材料相比,氧化钌/活性炭复合材料的高功率放电特性则有明显的提高。     

碳纳米管–聚吡咯复合材料在超电容器中的应用

在碳纳米管(CNT)基体上用化学聚合或电化学聚合方法沉积聚吡咯(PPy)制得复合材料。再以此类复合材料为活性物质制作电极,组装成原型超电容器。并对其进行了循环伏安、恒电流充放电等电化学测试。用此类复合材料制成的原型超电容器的比容量(23.6 F/g)与纯碳纳米管(2.3 F/g)或纯聚吡咯(3.9 F/g)制成的原型电容器比较,发现复合电极电容器比容量的提高不是简单的加和效应,而是协同效应所致。     

碳纳米管–聚吡咯复合材料在超电容器中的应用

在碳纳米管(CNT)基体上用化学聚合或电化学聚合方法沉积聚吡咯(PPy)制得复合材料。再以此类复合材料为活性物质制作电极,组装成原型超电容器。并对其进行了循环伏安、恒电流充放电等电化学测试。用此类复合材料制成的原型超电容器的比容量(23.6 F/g)与纯碳纳米管(2.3 F/g)或纯聚吡咯(3.9 F/g)制成的原型电容器比较,发现复合电极电容器比容量的提高不是简单的加和效应,而是协同效应所致。     

自组装NiO/还原氧化石墨烯复合材料及其超级电容性能研究

通过水热法制备得到α-Ni(OH)₂,在甲酰胺溶剂中,通过机械振荡结合超声对其进行剥离,得到厚度约为1.1 nm的Ni(OH)₂纳米片,与氧化石墨烯(GO)悬浮液混合后,静电自组装得到Ni(OH)₂/GO,经高温热处理获得NiO/还原氧化石墨烯(rGO)复合材料。同时研究了NiO/rGO的结构、形貌及其用作超级电容器电极材料的电化学性能。形貌表征显示NiO/rGO呈层-层形貌,N₂吸-脱附实验表明复合材料存在介孔结构。在KOH电解液中,1 A/g电流密度下NiO/rGO的比容量为1564 F/g,远高于初始Ni(OH)₂和单纯的NiO;组装的NiO/rGO//石墨烯水凝胶(GH)非对称超级电容器(ASC)器件,充放电电位窗口为0～1.6 V,10 A/g电流密度下经1000次充放电循环的比容量保持率达84.2%。     

CaMoO4/GO复合材料的制备及其超级电容器性能

采用水热法成功合成了CaMoO₄/氧化石墨烯(GO)纳米复合材料。通过材料的表面形貌、晶体结构和电化学性能研究合成的纳米复合材料。结果表明,CaMoO₄/GO电极在电流密度0.5 A/g时比电容高达571.82 F/g,并且在1 A/g的电流密度下,经过1000次循环后的比电容保持率仍为84%。为了测试电极材料的实际应用效果,全固态超级电容器(ASC)分别使用CaMoO₄/GO和活性炭(AC)作为正极和负极进行组装。组装的ASC在功率密度1710.3 W/kg下显示出25.18 W·h·kg^-1的能量密度,并且能通过串联4个ASC为红色发光二极管供电。上述结果表明CaMoO₄/GO电极材料在高性能储能设备的应用中具有非常大的潜力。     

氧化镍/膨胀石墨复合物的合成及其电容性能

采用液相沉淀法制备了膨胀石墨(EG)质量分数为40%的氧化镍/膨胀石墨(NiO/EG)复合物,研究了该复合物电化学性能。结果表明:纳米NiO均匀分散在EG表面;导电性良好的EG显著提高了NiO的电化学性能。在6 mol.L–1 KOH电解液中,NiO/EG复合物电极的氧化和还原峰的电位差降低了0.141 V,100 mA.g–1电流密度下比容量可达到370 F.g–1,远高于纯NiO(约206 F.g–1)和纯EG的比容量(约25 F.g–1)。NiO/EG复合物在充放电500次后,比容量仅衰减了2.5%。     

脉冲电沉积法制备PANI/CNTs复合材料及其超电容性能

采用脉冲电沉积法,于苯胺、浓硫酸和碳纳米管(CNTs)的混合溶液中,制备得到PANI(聚苯胺)/CNTs复合物,并对所制PANI/CNTs复合材料的微观形貌、结构以及电化学性能进行了研究。结果表明,CNTs的加入增大了PANI/CNTs复合物的比表面积,提高了其导电性。PANI/CNTs复合物用作超级电容器电极材料时,其比容量可达420.7 F/g,经500次循环后衰减幅度为8.9%,表现出优良的电化学性能。     

α-Ni(OH)2/石墨烯纳米复合材料的制备及其电容性能研究

近年来,石墨烯复合材料作为理想基底用于电极材料的生长,在电化学的许多领域都得到了广泛的应用。以石墨烯和六水合硝酸镍为原料,用NaBH_4作为还原剂,在90℃低温条件下制备合成了具有纳米尺寸的α-Ni(OH)_2/石墨烯复合材料。研究了石墨烯与α-Ni(OH)_2的质量比不同时复合材料的电化学性能。结果表明:当质量比为5∶5时,复合材料显示了最佳的电化学性能:在0～0.47 V的电位窗口,0.2 A/g的电流密度下,比容量高达1280 F/g;2 A/g的电流密度下循环充放电测试2000次后,比容量仍然保持88%。因此,该复合材料作为一种理想的复合电极材料,可被应用到能量转化/储存系统中。     

有机双电层电容器用活性炭电极的修饰

利用石墨、炭黑、碳纳米管三种导电碳材料,对高比表面积活性炭进行掺杂修饰,制备有机电解液双电层电容器用薄膜电极。经电化学测试发现,在 1 mol/L 的 LiPF6/EC-DEC(体积比 1∶1)溶液中,经不同导电材料修饰后的活性炭电极,其单电极比容量和大电流充放电性能均有较大改善。其中,掺杂 10%(质量分数)碳纳米管的活性炭电极,在 330 mA/g 电流密度下的单电极比容量可达 81 F/g,比未掺杂活性炭电极 60 F/g 的比容量提高了 35%;电流密度从 60 mA/g 增至 330 mA/g,该电极的容量保持率为 79.4%。     

量子点诱导高氮掺杂提高氧化石墨烯基超级电容器性能

使用氧化石墨烯量子点(GQD)嵌入氧化石墨烯(GO)层间,在NH₃氛围下采用光照辐射进行还原和氮掺杂,制备一种类“三明治”结构的超级电容器电极材料。光化学还原法可以在短时间内实现材料的还原和掺氮。氧化石墨烯量子点丰富的边缘活性位点使氮的原子数分数高达18.19%,大幅提高了材料的湿润性和电导率。同时量子点嵌入氧化石墨烯层间,可以有效防止氧化石墨烯片的堆叠,增加材料中离子通道数量。制备的两电极超级电容器在0.3 A/g电流密度下的比容量高达380 F/g,电极充放电循环2 000次以后,电容量仍然保持初始电容量的86%。这种富氮石墨烯在新型储能系统中具有潜在的应用前景。     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.     

A 1 cm/spl times/1 cm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 1 cm/spl times/1 cm array of 100 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V. The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 APDs had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.