平行排列液晶盒的挠曲电效应及一级Fréedericksz转变

基于液晶弹性理论研究了平行排列液晶盒中的挠曲电效应,通过变分理论得到了液晶指向矢满足的微分方程及边界条件。应用差分迭代方法进行了数值求解,得到了液晶指向矢随不同的参数变化的曲线。增大液晶盒厚度、上下基板锚定能系数以及增大预倾角这3种方法,在考虑挠曲电效应对液晶指向矢分布的影响时是等效的。研究了介电效应和挠曲电效应同时作用下的一级Fr啨edericksz转变问题。当|Δ<ε|较大、A较小时,将会发生一级Fr啨edericksz转变。     

平行排列液晶盒的挠曲电效应及一级Fréedericksz转变

基于液晶弹性理论研究了平行排列液晶盒中的挠曲电效应,通过变分理论得到了液晶指向矢满足的微分方程及边界条件.应用差分迭代方法进行了数值求解,得到了液晶指向矢随不同的参数变化的曲线.增大液晶盒厚度、上下基板锚定能系数以及增大预倾角这3种方法,在考虑挠曲电效应对液晶指向矢分布的影响时是等效的.研究了介电效应和挠曲电效应同时作用下的一级Fréedericksz转变问题.当|Δ＜ε| 较大、A较小时,将会发生一级Fréedericksz转变.     

空间各向异性势扭曲向列液晶盒的Fréedericksz转变

基于格点模型空间各向异性两体势研究扭曲向列(TN)液晶盒的Fréedericksz转变.该作用势不仅是空间各向异性的并且依赖于液晶的弹性常数.理论处理中假定具有理想向列序,这意味着分子长轴取向方向与液晶指向矢是重合的,而总自由能等于总相互作用能.分别对指向矢的倾角和方位角进行傅里叶展开,通过二阶导矩阵方法确定TN盒的阈值磁场.该磁场依赖于总扭曲角和液晶的弹性常数,并与连续体理论结果进行了比较.通过平衡态下系统自由能取最小,得到指向矢满足的平衡态方程.基于平衡态方程,对TN液晶盒中指向矢在磁场作用下的分布进行了数值计算.数值结果验证了液晶指向矢所满足的平衡态方程的正确性.进一步证实了文献中最近提出的两种从弹性能到两体作用势的映射方案之一(即模型Ⅰ)可以给出与连续体理论相一致的结果.     

双轴向列相Fréedericksz转变的Monte Carlo模拟

通过Monte Carlo方法研究了在磁场诱导下的双轴向列相液晶的Fréedericksz转变,在模拟的过程中采用了London色散力近似。考虑3种不同的排列方式,通过改变3个分子轴的磁化率和磁场方向,讨论了9种不同的Fréedericksz转变并分别给出了相应的阈值磁场,通过计算机的模拟实现了短轴u和v的转变,长轴w和短轴u的转变以及长轴w和短轴v的转变。模拟结果表明,在给定假设的情况下满足单一弹性常数近似。研究结果对发展双轴液晶显示器件有一定的理论指导意义。     

空间各向异性势扭曲向列液晶盒的Fredericksz转变

基于格点模型空间各向异性两体势研究扭曲向列(TN)液晶盒的Fredericksz转变。该作用势不仅是空间各向异性的并且依赖于液晶的弹性常数。理论处理中假定具有理想向列序,这意味着分子长轴取向方向与液晶指向矢是重合的,而总自由能等于总相互作用能。分别对指向矢的倾角和方位角进行傅里叶展开,通过二阶导矩阵方法确定TN盒的阈值磁场。该磁场依赖于总扭曲角和液晶的弹性常数,并与连续体理论结果进行了比较。通过平衡态下系统自由能取最小,得到指向矢满足的平衡态方程。基于平衡态方程,对TN液晶盒中指向矢在磁场作用下的分布进行了数值计算。数值结果验证了液晶指向矢所满足的平衡态方程的正确性。进一步证实了文献中最近提出的两种从弹性能到两体作用势的映射方案之一(即模型Ⅰ)可以给出与连续体理论相一致的结果。     

向列相液晶盒挠曲电效应的理论分析

用解析的方法证明了挠曲电效应对沿面排列的向列相液晶盒的物理效应。在不考虑液晶界面离子吸附的情况下，导出了挠曲电效应引起的表面能，证明了该表面能在上下基板处具有不同的数值，从而引起液晶指向矢分布对中间层对称性破缺。这将会影响液晶盒的光学性质。通过计算机数值模拟表明，挠曲电效应引起的指向矢分布对称性破缺会随着挠曲电效应的增强而增大。     

同心柱筒中混合排列向列相液晶中的挠曲电效应

本文研究径向电场作用下同心柱筒中混合排列向列相液晶的指向矢分布,重点研究挠曲电效应对指向矢分布的影响。向列相液晶处于同心圆柱构成的薄层间,内表面径向锚定、外表面轴向锚定以及内表面轴向锚定、外表面径向锚定构成两种同心柱筒混合排列模型。基于向列相液晶Frank弹性理论,通过差分迭代方法,分别在强锚定及弱锚定边界条件下,研究了两种模型中挠曲电效应对指向矢分布的影响。研究结果表明:挠曲电效应在薄层内边界、外边界以及薄层内部对指向矢分布有着不同的影响;同心柱筒中指向矢分布由柱对称性、边界锚定作用、介电耦合作用、挠曲电效应的综合作用所决定。     

弱锚定条件下平行排列向列液晶盒的一级转变

在液晶总自由能中界面锚定能采用修正后的Rapini-Papoular(RP)公式，用严格的数学推导和计算，详细研究了弱锚定条件下平行排列的向列液晶盒在阈值点的弗雷彼里克兹(Freedericksz)转变问题。结果表明，对所研究的液晶盒在一定条件下阈值点的转变可以是一级转变。同时给出了一级转变条件，它与液晶表面参量有关。     

对向列相液晶反转壁中+1缺陷处挠曲电效应的理论分析

基于Pramoda Kumar等人文章中关于向列相液晶反转壁中+1缺陷处挠曲电效应的实验现象,我们利用Landau-de Gennes理论给出相应的理论分析。当对弱锚定的平行排列向列相液晶盒施加垂直基板的直流电压,在反转壁中的±1缺陷会发生旋转。对于其中的+1缺陷,我们给出了外加电场作用下液晶分子的自由能表达式并通过模拟描述指向矢的方位角和极角的变化情况给出相应的缺陷处电场驱动的结构变化。模拟结果给出的挠曲电效应引起的方位角的变化角度与Pramoda Kumar等人的实验得到的在+1缺陷处消光刷的变化情况是一致的。     

柱筒中掺杂手性剂向列相液晶的介电及挠曲电性能

在电场作用下,同心圆柱筒中的介电作用及挠曲电作用具有与平面液晶盒中不同的性质。本文在轴向强锚定边界条件下,对柱筒内添加手性剂的向列相液晶5CB施加径向电场,分别研究了介电效应和挠曲电效应对指向矢分布的影响。基于液晶连续体弹性理论和有限差分迭代方法,计算了体平衡态方程。通过数值计算发现,挠曲电系数e1、e3具有不同的取向作用。本文的模拟结果为电场作用下柱筒内手性向列相液晶指向矢结构的预测提供了更全面的理论分析,对液晶挠曲电系数的测量也具有一定的指导意义。     

NGN导向下的融合与转型策略（上）

在简要讨论NGN定义，实质内涵基础上，本文重点论述NGN导向下的“融合”与“转型”策略。     

NGN导向下的融合与转型策略（下）

3.深入研究NGN IMS，寻求对策 对ITU NGN IMS的考虑，必须全面分析固定网络与移动网络在既有网络、系统、接入、终端、资源潜力等各方面的现实差异，从而使其IMS规范获得进一步务实有效的修订与扩充。例如，首先以带宽资源及其导致的SiP信令压缩问题，即可说明移动网与固定网要求的巨大差异，而且这也影响到QoS及终端，     

Mobile Oriented Future Internet (MOFI):Architectural Design and Implementations

With the recent growth in smartphone services, the “mobile” environment has become a key factor to consider in the design of the future Internet. In this paper, we propose Mobile‐Oriented Future Internet (MOFI), which is a new architecture for the future Internet for mobile‐oriented environments. The MOFI architecture is designed with three functional features: global identifier and local locator in the identifier‐locator separation, query‐first data delivery for route optimization, and distributed control of identifier‐locator mapping. The proposed architecture and functional operations are implemented and tested using the Linux platform. From the experiment results, we see that the MOFI architecture performs better than the existing identifier‐locator separation schemes, such as Proxy Mobile IP and Host Identity Protocol, in terms of data throughout, mapping control overhead, and handover delay.     

分数(p＞1)级傅里叶逆变换的无透镜光学实现

用球面波照明物体的自由空间菲涅耳衍射,实现分数（Ｐ〉１）级傅里叶逆变换,提供了分数傅里叶逆变换无透镜光学实现的模式及其参量选择的法则,对光学信息处理具有实用价值。计算机模拟实验证明了结论的可靠与可行。     

Analysis and Design of a CMOS Phase-Tunable Injection-Coupled LC Quadrature VCO (PTIC-QVCO)

This paper presents the design, analysis, and characterization of a low-power, low-phase-noise, phase-tunable injection-coupled LC quadrature oscillator (PTIC-QVCO). Two LC VCOs are superharmonically coupled in quadrature phase via a frequency doubler that injects a synchronizing signal at the common source node of the negative transconductor stage. Conceptual and analytical models of the circuit are introduced to derive the conditions for quadrature operation and examine the circuit parameters affecting the phase imbalance due to mismatched VCOs. Additionally, a tunable tail filter (TTF) is incorporated to calibrate the residual quadrature imbalance in presence of a 3-$sigma $ variation in the device parameters and drive the oscillator to its optimum phase noise performance. To validate the proposed approach, measurements have been carried out on a 9 GHz prototype implemented in a 0.18 $muhbox{m}$ RF CMOS process. With core current consumption of 5 mA at 1.8 V supply voltage, the circuit achieves a measured phase noise figure-of-merit ranging from 177.3 to 182.6 dBc/Hz at 3 MHz offset along the 9.0 to 9.6 GHz frequency tuning range. Quadrature phase correction of $pm 11 ^{0}$ at 9 GHz is demonstrated.      

Local Contribution (LC) and Trustworthiness Factors to Induce Fairness in P2P Networks

Wireless Personal Communications - A peer-to-peer (P2P) network is a distributed system in which the autonomous peers participate at their motivation and resources are shared in distributed manner....     

融合、创新导向下的手机电视务实发展策略（上）

本文论述全球信息通信网络发展环境下手机电视的定义问题与业务市场前景，并从七个方面论证了在融合，创新导向下的手机电视务实发展策略的思考和要解决的问题。     

The growth and characterization of (211) and (133) Oriented (Hg,Cd)Te epilayers (211)B GaAs by organometallic vapor phase epitaxy

The growth of CdTe buffer layers on (211)B GaAs substrates by organometallic vapor phase epitaxy (OMVPE) was studied, and it was found that, depending on the growth conditions, either the (211) or (133) epitaxial orientation could be formed. In some cases, an epilayer showing a mixed (211) and (133) orientation was also observed. The influence of several growth parameters on the orientation of the CdTe layer was investigated, and it was found that the Te/Cd ratio, together with the growth temperature, have the most significant effect in determining the epilayer orientation. From these results, it was then possible to select nominally optimized growth conditions for CdTe buffer layers of both orientations. (Hg,Cd)Te layers of the same orientations could then be grown and characterized. Although double crystal x-ray diffraction measurements indicated a somewhat better crystalline perfection in the (133) (Hg,Cd)Te layers, these layers showed a poor surface morphology compared to the (211) orientation. Measurement of etch pit densities also indicated defect densities to be typically half an order of magnitude higher in the (133) orientation. Diodes were formed by ion implantation in both orientations and significantly better results were obtained on the (211) (Hg,Cd)Te layers.     

Design of a Tapered Transition in a Circular Waveguide (Correspondence)

This correspondence describes a successful design procedure for transitions in circular waveguide. The design procedure is discussed and a universal design curve developed. As an example, one point on a 12-in taper from WRC 283 (2.81-in ID) to WRC 621 (1.28-in ID) is calculated. Test results for the 12-in taper in the 5.925-to 6.425-GHz common carrier band are given.     

Nano-Electro-Mechanical Nonvolatile Memory (NEMory) Cell Design and Scaling

The design and scalability of a nano-electro-mechanical memory (NEMory) cell are investigated via analytical modeling and finite element analysis (FEA) simulation. Proportionate scaling of all the cell dimensions provides for improved storage density together with low operating voltages and fast program/erase times. From FEA simulation, a 75-nm-long aluminum cantilever-beam NEMory cell is expected to have sub-1-ns erase and program times for sub-1-V operation. Because there are practical limits to beam and air-gap thickness scaling, it will be difficult to achieve low-voltage operation for very short beams $(L_{rm beam} ≪ hbox{50} hbox{nm})$, unless a beam material with a low Young's modulus is used. Fracture strain imposes a fundamental limit for beam-length scaling. Thus, a high fracture-strain beam material is desirable to extend NEMory scalability.