光纤光栅外腔半导体激光器输出特性耦合效率的研究

本文采用射线追踪法,导出了光纤光栅外腔半导体激光器(FGESL)的连续输出谱P(λ)及输出功率的隐函表达式.在此基础上,结合载流子速率方程,对外腔半导体激光器的P(λ)及P-I特性进行了研究.结果表明:光纤光栅外腔的输出谱在反射带宽内呈现出多峰结构,峰值与耦合效率有关;随着祸合效率的增大,输出功率整体上呈现上升的趋势,并在上升过程中出现的抖动越来越小.     

Very high CW output power and power conversion efficiency from current-confined CDH-LOC diode lasers

CDH-LOC lasers with tight current confinement to the lasing region provide CW output powers as high as 165 mW. The overall power conversion efficiency in CW operation reaches values of 35% (front-facet emitted power/overall input electrical power). Single-longitudinal-mode and fundamental-mode operations are achieved to 40 mW CW and 60 mW peak power (50% duty cycle), respectively. The threshold-current temperature coefficient T0 reaches values of 185 K.     

A linearized theory for the diode laser in an external cavity

A simple model for a semiconductor diode laser in an external cavity is developed. The stability and small-signal modulation characteristics of the new model is investigated and compared with experiment.     

Line broadening and intensity noise due to polarization switchingin external cavity diode lasers

The authors report on polarization switching as a new source of linewidth broadening and intensity noise in external grating diode laser setups that emit in a sequence of alternating wavelength intervals having TE and TM polarization, respectively. At the borders between two consecutive intervals, the continuous random hopping of the system between the two polarizations results in line broadening and in RIN values of -100 dB/Hz at frequencies below 100 MHz. In the middle part of each wavelength interval, linewidth of less than 300 kHz and low noise (<-145 dB/Hz) have been measured     

Polarization of the output of InGaAsP semiconductor diode lasers

Measurements of the degree of polarization (ρ) of the output of 1.3-μm InGaAsP semiconductor diode lasers as a function of current are discussed. It is found that ρ measured for well below threshold (ρ_b) is a better indicator of mechanical strain in the active region than ρ measured near or above threshold. ρ_b exhibits little dependence on drive level, mode reflectivity, threshold, or saturation of the gain. A possible correlation between the magnitude of ρ_b and device operating characteristics was found. More work is required to confirm this possibility. Data which provide experimental evidence for the magnitude of the difference between the reflectivities of the TE and TM modes are presented     

Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power

High-efficiency tapered diode lasers with ridge-waveguide structure emitting at 976 nm have been realised. High wall-plug efficiencies of more than 57% result in output powers of more than 12 W for a single emitter with 3.5 mm resonator length. A nearly diffraction limited behaviour has been demonstrated up to 8.3 W CW.     

外腔锁相改善半导体激光器列阵输出光束特性

采用一个由快轴准直透镜和一个高反射率平面镜组成的简单外腔,实现了半导体激光器列阵(DLA)锁相运行,改善了DLA的出射光束质量。DLA远场出现了3个瓣,每瓣发散角为10mrad左右;光谱从自由运行时的2 .2nm压缩到了0 .3nm ;阈值电流由7A降低到了5 .5A。     

光纤光栅外腔半导体激光器输出谱的射线法研究

本文采用射线法,计及增益随波长的变化,首次导出了光纤光栅外腔半导体激光器(FGESL)输出谱的表达式.利用该表达式,结合载流子速率方程,对FGESL输出谱的精细结构进行研究.研究结果表明:光纤光栅外腔将引起位于反射带宽附近波长处能量分布发生变化,在反射带宽内出现多峰结构,峰的数目与外腔长度有关;随着电流的增大,FGESL的输出功率和边模抑制比总体呈现上升的趋势,上升过程中存在波动,波动的幅度和频率随着前端面反射的减小而减小.     

Lateral mode stabilization of diode lasers by means of apertured facet reflectors

We report the design, fabrication, and testing of an apertured facet reflector for a GaAs/GaAlAs room temperature CW diode laser. The reflector, composed of Al2O3, Si, Te, and Al2O3layers with the Te ablated by the laser beam itself at the mode center, has a higher reflectivity at its center compared to the unablated surrounding region. This nonuniform reflectivity acts to stabilize laterally the fundamental mode and substantially increase the "kink" level. Specifically, the "kink" level of a large optical cavity (LOC) heterostructure laser with an 8 μm wide stripe was increased from ≈ 10 mW before coating to above 30 mW by the addition of the apertured reflector.     

Linewidth of monolithic external cavity DFB lasers

An expression for the linewidth of DFB lasers with lossy external cavities is derived. The influence of facet reflectivity and high feedback levels is discussed     

Broadly wavelength-tunable external cavity lasers with extremely low power variation over tuning range

Tunable external-cavity lasers with low power variation over a broad tuning range are demonstrated using asymmetric multiple quantum-wells with a wide and flat gain. For a 2.8-/spl mu/m-wide ridge waveguide laser of cavity length 380 /spl mu/m, when used in a grating external cavity and with an antireflection coating on one facet of laser diode chip, the power variation of less than -1 dB is obtained over a range of 80 nm. This extremely low power variation is a direct result of the spectrally flat gain.     

Effect of external reflectors on longitudinal modes of distributed feedback lasers

The effect of external reflectors on longitudinal modes of distributed feedback (DFB) lasers is analyzed. The general case of dissimilar reflectors arbitrarily located relative to the phase of the DFB structure is considered. An eigenvalue equation for the propagation constants is derived and solved numerically for a variety of practical cases. Longitudinal mode thresholds, wavelengths, separations, and field distributions are obtained for GaAs lasers and for DFB lasers with a single reflector. It is shown that these quantities are very sensitive not only to the relative strength of the discrete and DFB, but also to the relative phases. Quite asymmetric transmitted powers are shown to occur under a variety of circumstances.     

Polarization state of the emission of external grating diode lasers

The laser emission of transverse electric (TE) and transverse magnetic (TM) polarization, in alternating successive spectral ranges, that can occur when external grating diode lasers are wavelength tuned, is theoretically and experimentally investigated. The modulated threshold gain curves of the external cavity for the two polarizations can be made to intersect with each other if a grating is used in such a way as to practically eliminate the difference between the laser diode losses and confinement factors for TE and TM polarization. The result is a sequence of wavelength ranges where the threshold gain is alternately lower for the TE resp. TM polarization. Within each range, a wavelength tunable single mode laser emission is obtained. The phenomenon is described, taking into account the characteristics of the key components of the external cavity, i.e., laser diode structure, antireflective (AR) coating, and grating efficiency. Design tools are proposed for the characteristics of the components necessary for the development of such an external cavity. The theoretical and design concepts are experimentally confirmed in a number of external cavities, using diode lasers emitting around 1.5 μm, with different types of antireflective coatings, as well as different grating configurations     

Relation between the cavity detuning and the output opticalintensity in free-electron lasers

The authors use a simple model of saturation in free-electron lasers operating with pulsed beams to study the intensity growth as a function of the cavity mismatch and of the coupling parameter. In spite of the simplicity of the model, the dependence of the intracavity power, as a function of the cavity detuning, is reproduced remarkably well. It is also pointed out that an enhancement of the optical power is obtained by adjusting the cavity length while the optical signal grows. The problem is analyzed qualitatively and realization schemes are proposed     

Theory of spectral linewidth of external cavity semiconductor lasers

A new formula of the spectral linewidth of external cavity semiconductor lasers is proposed, with which linewidth narrowing with the optical feedback is discussed. It is shown that in the limit of large external cavity length, the linewidth caused by the phase diffusion due to spontaneously emitted photons becomes dominant and the linewidth decreases proportionally to the inverse of the external cavity length.     

Frequency stabilization of an external cavity laser diode usingelectrooptic effect

An external cavity laser diode, which consists of a LiNbO₃ phase modulator, was frequency-stabilized to a resonance frequency of a Fabry-Perot interferometer using the electrooptic effect. The optical frequency fluctuation was detected through a Fabry-Perot interferometer and the detected signal was negatively fed back to the phase modulator to reduce the frequency fluctuation. The rear facet of the electrooptic phase modulator was coated with gold and used as an external mirror. At feedback-off state, the peak-to-peak frequency fluctuation of the laser diode was 52 MHz in 2 min. At feedback-on state, the peak-to-peak frequency fluctuation was reduced to 1.5 MHz. This condition was maintained for the duration of the observation, 1 h and 40 min     

外腔半导体激光器的高精度双稳温度控制

温度对于外腔半导体激光器的特性有很大的影响,对其温度进行高精度的控制,是保证外腔半导体激光器输出波长稳定的关键技术之一。本文介绍了外腔半导体激光器的高精度温度控制原理和方法,提出了采用PID控制原理的模拟电路设计和以单片机为核心的数字电路设计相结合的双稳温度控制方案,并对其进行了理论分析和实验研究。     

Effect of external optical feedback on spectral properties of external cavity semiconductor lasers

The effects of external optical feedback on the spectral properties of single-mode external cavity semiconductor lasers that use a graded-index (GRIN) lens in the optical cavity have been investigated. Mode rejection ratio and intensity drop-out rate of the dominant mode as a function of optical strength have been measured. These measurements show that a laser with a short (160 ?m) GRIN-lens external cavity can tolerate optical feedback as large as ?20 dB without significant penalty. This minimum optical feedback can be larger when lasers with shorter cavity length are used.