共查询到20条相似文献,搜索用时 15 毫秒
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为了研究调谐过程中外腔半导体激光器的模稳定性,采用多光束干涉理论推导Littrow结构外腔半导体激光器的腔增益,并模拟其模结构。分析了光栅面和转臂不在同一平面的情形下,在光栅转动调谐时,通过匹配光栅的反馈波长变化率与外腔波长变化率,推导出最佳的初始外腔长度,并研究了动态模稳定(无跳模调谐)的范围;采用严格的耦合理论和光线变换矩阵分析了准直(耦合)透镜的位置对系统后向耦合效率的影响。结果表明,系统后向耦合效率最大可达99%,极大地压窄了中心波长为780nm半导体激光器的线宽,外腔半导体激光器的理论线宽为未加外腔时的0.96%,动态模稳定范围可达6.8nm。 相似文献
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Very high CW output power and power conversion efficiency from current-confined CDH-LOC diode lasers
CDH-LOC lasers with tight current confinement to the lasing region provide CW output powers as high as 165 mW. The overall power conversion efficiency in CW operation reaches values of 35% (front-facet emitted power/overall input electrical power). Single-longitudinal-mode and fundamental-mode operations are achieved to 40 mW CW and 60 mW peak power (50% duty cycle), respectively. The threshold-current temperature coefficient T0 reaches values of 185 K. 相似文献
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A simple model for a semiconductor diode laser in an external cavity is developed. The stability and small-signal modulation characteristics of the new model is investigated and compared with experiment. 相似文献
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The authors report on polarization switching as a new source of linewidth broadening and intensity noise in external grating diode laser setups that emit in a sequence of alternating wavelength intervals having TE and TM polarization, respectively. At the borders between two consecutive intervals, the continuous random hopping of the system between the two polarizations results in line broadening and in RIN values of -100 dB/Hz at frequencies below 100 MHz. In the middle part of each wavelength interval, linewidth of less than 300 kHz and low noise (<-145 dB/Hz) have been measured 相似文献
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《Electron Devices, IEEE Transactions on》1973,20(12):1172-1172
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Measurements of the degree of polarization (ρ) of the output of 1.3-μm InGaAsP semiconductor diode lasers as a function of current are discussed. It is found that ρ measured for well below threshold (ρb) is a better indicator of mechanical strain in the active region than ρ measured near or above threshold. ρb exhibits little dependence on drive level, mode reflectivity, threshold, or saturation of the gain. A possible correlation between the magnitude of ρb and device operating characteristics was found. More work is required to confirm this possibility. Data which provide experimental evidence for the magnitude of the difference between the reflectivities of the TE and TM modes are presented 相似文献
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为了研究双体布喇格光栅外腔二极管激光器的衍射特性,采用一块体布喇格光栅与一块横向啁啾体布喇格光栅组成双体布喇格光栅,理论分析了组合前后体布喇格光栅的衍射特性,实验研究了双体布喇格光栅外腔二极管激光器的输出光谱特性。结果表明,在双体布喇格光栅外腔反馈的作用下,可以实现双波长同时输出,通过横向移动横向啁啾体布喇格光栅,可以在保持其中一个中心波长不变的情况下,使另外的一个波长在800nm~815nm的范围内线性调谐。此研究为基于双体布喇格光栅实现双波长输出的大功率二极管激光器提供了实验指导。 相似文献
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外腔锁相改善半导体激光器列阵输出光束特性 总被引:1,自引:0,他引:1
采用一个由快轴准直透镜和一个高反射率平面镜组成的简单外腔,实现了半导体激光器列阵(DLA)锁相运行,改善了DLA的出射光束质量。DLA远场出现了3个瓣,每瓣发散角为10mrad左右;光谱从自由运行时的2 .2nm压缩到了0 .3nm ;阈值电流由7A降低到了5 .5A。 相似文献
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Kelemen M.T. Weber J. Kaufel G. Bihlmann G. Moritz R. Mikulla M. Weimann G. 《Electronics letters》2005,41(18):1011-1013
High-efficiency tapered diode lasers with ridge-waveguide structure emitting at 976 nm have been realised. High wall-plug efficiencies of more than 57% result in output powers of more than 12 W for a single emitter with 3.5 mm resonator length. A nearly diffraction limited behaviour has been demonstrated up to 8.3 W CW. 相似文献
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Ponce F. Scifres D. Streifer W. Connell G. 《Quantum Electronics, IEEE Journal of》1979,15(11):1205-1207
We report the design, fabrication, and testing of an apertured facet reflector for a GaAs/GaAlAs room temperature CW diode laser. The reflector, composed of Al2 O3 , Si, Te, and Al2 O3 layers with the Te ablated by the laser beam itself at the mode center, has a higher reflectivity at its center compared to the unablated surrounding region. This nonuniform reflectivity acts to stabilize laterally the fundamental mode and substantially increase the "kink" level. Specifically, the "kink" level of a large optical cavity (LOC) heterostructure laser with an 8 μm wide stripe was increased from ≈ 10 mW before coating to above 30 mW by the addition of the apertured reflector. 相似文献
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An expression for the linewidth of DFB lasers with lossy external cavities is derived. The influence of facet reflectivity and high feedback levels is discussed 相似文献
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The effect of external reflectors on longitudinal modes of distributed feedback (DFB) lasers is analyzed. The general case of dissimilar reflectors arbitrarily located relative to the phase of the DFB structure is considered. An eigenvalue equation for the propagation constants is derived and solved numerically for a variety of practical cases. Longitudinal mode thresholds, wavelengths, separations, and field distributions are obtained for GaAs lasers and for DFB lasers with a single reflector. It is shown that these quantities are very sensitive not only to the relative strength of the discrete and DFB, but also to the relative phases. Quite asymmetric transmitted powers are shown to occur under a variety of circumstances. 相似文献
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Oh Kee Kwon Kang Ho Kim Eun Deok Sim Jong Hoi Kim Hyun Soo Kim Kwang Ryong Oh 《Photonics Technology Letters, IEEE》2005,17(3):537-539
Tunable external-cavity lasers with low power variation over a broad tuning range are demonstrated using asymmetric multiple quantum-wells with a wide and flat gain. For a 2.8-/spl mu/m-wide ridge waveguide laser of cavity length 380 /spl mu/m, when used in a grating external cavity and with an antireflection coating on one facet of laser diode chip, the power variation of less than -1 dB is obtained over a range of 80 nm. This extremely low power variation is a direct result of the spectrally flat gain. 相似文献
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The laser emission of transverse electric (TE) and transverse magnetic (TM) polarization, in alternating successive spectral ranges, that can occur when external grating diode lasers are wavelength tuned, is theoretically and experimentally investigated. The modulated threshold gain curves of the external cavity for the two polarizations can be made to intersect with each other if a grating is used in such a way as to practically eliminate the difference between the laser diode losses and confinement factors for TE and TM polarization. The result is a sequence of wavelength ranges where the threshold gain is alternately lower for the TE resp. TM polarization. Within each range, a wavelength tunable single mode laser emission is obtained. The phenomenon is described, taking into account the characteristics of the key components of the external cavity, i.e., laser diode structure, antireflective (AR) coating, and grating efficiency. Design tools are proposed for the characteristics of the components necessary for the development of such an external cavity. The theoretical and design concepts are experimentally confirmed in a number of external cavities, using diode lasers emitting around 1.5 μm, with different types of antireflective coatings, as well as different grating configurations 相似文献
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Dattoli G. De Angelis A. Gallerano G.P. Mari C. Torre A. 《Quantum Electronics, IEEE Journal of》1991,27(4):903-907
The authors use a simple model of saturation in free-electron lasers operating with pulsed beams to study the intensity growth as a function of the cavity mismatch and of the coupling parameter. In spite of the simplicity of the model, the dependence of the intracavity power, as a function of the cavity detuning, is reproduced remarkably well. It is also pointed out that an enhancement of the optical power is obtained by adjusting the cavity length while the optical signal grows. The problem is analyzed qualitatively and realization schemes are proposed 相似文献