50nm及50nm以下同步辐射X射线光刻光束线设计

X射线光刻相对于其他下一代光刻技术而言有许多优点,比如其工艺宽容度大、成品率高、景深大、曝光视场大、成本低等,更为重要的是,其技术已经比较成熟。对于100nm同步辐射X线光刻系统而言,它采用的波长通常为0．7-1．0nm,而当光刻分辨率达到50nm以下时,采用的同步辐射X射线波长范围应该为0．2—0．4nm。探讨了在北京同步辐射3B1A光刻束线上进行50nmX射线光刻的可能性。     

现代光刻技术

作为当前集成电路制造的主流技术,光学光刻在趋近其分辨力极限的同时,面临着越来越大的挑战,即便在波前工程和分辨力增强技术的帮助下,光学光刻的分辨力也难以满足快速发展的半导体产业的技术需求。接近式X射线光刻技术(XRL)、散射角限制电子束投影光刻技术(SCALPEL)、电子束直写光刻技术(EBDW)、极紫外线即软X射线投影光刻技术(EUVL)、离子投影光刻技术(IPL)等下一代光刻技术(NGL)将会在特征线宽为100-70nm的技术节点介入集成电路制造的主流技术中。从目前NGL技术发展的趋势和市场需求的多元化来看,竞争的结果很可能是各种NGL技术并存。当特征尺寸进入纳米尺度(≤100n／n)以后,最终只有那些原子级的成像技术才能成为胜者。     

同步辐射光刻技术研究进展

光刻技术是推动集成电路制造业不断向前发展的关键技术。X射线光刻技术是下一代光刻技术的一种，具有产业化的应用前景。掩模技术是X射线光刻技术的难点，本文报告了国内利用同步辐射源的X射线掩模和光刻技术研究的最新进展。     

基于高级硅刻蚀和硅氧化工艺的软X射线干涉光刻分束光栅的优化设计

基于严格的矢量耦合波方法,对13.4nm(92.5eV)软X射线正入射于周期140nm的Si光栅和SiO2光栅的一级衍射效率进行了模拟计算,结果表明SiO2光栅的最大一级衍射效率远比Si光栅高,同时也比目前用于13.4nm软X射线干涉光刻的Cr/Si3N4复合光栅高.本文提出用高级硅刻蚀工艺和硅氧化工艺制作深高宽比纳米级SiO2光栅的新方法,可以解决直接刻蚀制作此光栅难度大的问题,适用于制作上海光源(SSRF)软X射线干涉光刻分束光栅.     

第三代核武器——X射线激光器

英国《航空研究》1987年8月7日报道】在裂变和聚变核武器之后,对第三代核武器所关注的问题主要集中于激光内爆和聚变装置等。一般地说X射线激光器(XRL)被看作是核武器,它的试验应该保持在《条约》规定的15万吨限额以下。XRL有两种:一种用于攻击,另一种用于战略防御计划(SDI)中的防御屏障系统。用于防御屏障系统亮度要求可能低些,走在最前面的     

X射线干涉光刻方法制备表面增强拉曼散射基底

表面增强拉曼散射(Surface-enhanced Raman Scatting,SERS)是一种非常重要的化合物分析技术,在光谱分析、生物传感等领域有着广泛的应用。理想的SERS基底需要同时具有高灵敏度和高均一性,这就需要制备一种大面积并且周期小于100 nm的金属纳米阵列。同步辐射X射线干涉光刻技术具有很高的光刻分辨能力和均匀性,可以制备高密度的金属纳米阵列。利用X射线干涉光刻方法制备了区域面积为320μm×440μm和周期为100 nm的二维周期结构,同时保持了高复制性和优异的均匀性。金属纳米阵列作为表面增强拉曼散射基底时可以提供很好的灵敏度和重复性。对于R6G染料,最低探测极限可达10-9 mol·L-1。在单片样品内的均匀性良好,相对标准偏差为6.72%。此外,表面拉曼增强基底能重复利用,可进一步降低成本。     

X射线光刻技术应用现状与前景

鉴于接近式X射线光刻技术具有高分辨率、大焦深、大曝光像场、高产量、大工艺宽容度、易于扩展到50am及50am以下规则等诸多优点,它非常适合应用于100nm及100nm以下集成电路的生产。本文首先简要介绍了国际上X射线光刻技术(PXL)现状,再分别介绍X射线光刻技术在纳米电子学研究、单片微波集成电路(MMIC)生产、硅基超大规模集成电路生产中的应用现状与前景,并对国内的X射线光刻技术的近期研究进展进行了简要介绍。     

美国在核武器研究中提出一些新概念

【美国《航空研究》1991年8月16日报道】除了一些令人吃惊的核武器外,X射线辐射激光器(XRL)和高功率微波武器(HPMW)在核武器设计方面有很大的潜力,这类武器给核武器研究所提出了某些大伤脑     

软X射线光子关联谱装置设计

X射线光子关联谱技术(X-ray Photon Correlation Spectroscopy,XPCS)是一种利用相干X光散射的二次相干,研究凝聚态物质在小尺度范围弛豫动力学的新技术,对入射光的相干性有较高要求。上海同步辐射光源BL08U干涉光刻分支线站(X-ray Interference Lithograph,XIL)采用椭圆偏振波荡器作为光源,具有很好的相干性,光子通量高,适合铁电体、磁性材料中介观尺度电极性或磁性微区的动力学研究。由此设计一套基于软X射线的光子关联谱装置,采用软X射线为入射相干光,对二次相干光采集、转换、放大处理之后进行自相关运算。该装置测量的样品周期尺度范围为10～60 nm。该装置的研制设计为更好地分析材料动力学信息提供了一种技术途径,是硬X射线的有效补充。     

激光印痕研究中的硅平面薄膜和刻蚀膜

研制了用于激光印痕研究的Si平面薄膜和刻蚀膜。膜制备的主要工艺采用氧化、扩散、光刻等现代半导体技术,并结合自截止腐蚀技术。Si平面膜厚度为3～4μm,表面粗糙度为几十nm。采用离子束刻蚀工艺,在Si膜表面引入25μm×25μm的网格图形或线宽为5μm的条状图形,获得了相应图形的Si刻蚀膜。探讨了扩散、氧化、腐蚀工艺对自支撑Si平面薄膜的表面粗糙度的影响,研究了离子束刻蚀参数对刻蚀图形形貌的影响。     

位敏电离室测X光强分布

用多收集电极的位置灵敏电离室测量了光刻用8光斑的均匀性分布及其总强度。实验结果表明该系统结构简单性能稳定,可推广应用到其他X光测量系统中去。     

Micromachining using deep ion beam lithography

In recent years the process combining deep X-ray lithography with electroforming and micromoulding (i.e. LIGA), has become an important technique for the production of high aspect-ratio microstructures for the fabrication of micro-electromechanical systems (MEMS). The aim of this paper is to investigate the potential of high energy ion microbeams for carrying out similar micromachining, and in particular for overcoming the geometrical restrictions which are inherent in deep x-ray lithography. Using a scanned 2.0 MeV proton beam of approximately 1 micron diameter, we produced latent microstructures in high molecular weight PMMA resist. These resist microstructures were subsequently developed using a multi-component developer which is highly specific in the removal of exposed resist, while leaving unexposed or marginally exposed material unaffected. A suitable range of exposures has been established, and factors affecting the geometrical fidelity of the produced microstructure have been investigated. The relative advantages and limitations of this technique vis à vis deep X-ray lithography are discussed.     

Prospects and challenges in application of gamma, electron and ion beams in processing of nanomaterials

Application of radiation techniques for nanotechnology has been known for years. X-ray, electron beam and ion beam lithography are good examples of applications. By using electron beams, ion beams and X-rays structures as small as 10 nm can be produced. Ion track membranes with track diameters from 10 nm to 100 nm are used as such or as templates for electroplating of nanowires of metal, semiconductor and magnetic materials. In the near future X-rays, focused ion beams and electron beams will be used for nanolithography and 3D fabrication; heavy ion beams on the other hand can be useful for fabrication of nanopores and nanowires. The use of radiation has proved to be an essential technique in the fabrication of nanostructures with high resolution as the radiation beams can be focused into few nanometer scales or less. Three groups of products could be considered to be fabricated by radiation techniques: nanoparticles, nanogels and nanocomposites. These and other possible fields of radiation processing applications in nanotechnology are discussed in the paper.     

同步辐射X射线光刻应用新领域—LIGA技术

介绍了一种超微细加工新方法－ＬＩＧＡ技术对掩模材料、光刻胶和光源的要求予以讨论，同时还介绍了国外在这方面的最新研究成果，ＬＩＧＡ技术是深度Ｘ射线刻蚀，电铸成型和塑料铸模等技术相结合的综合技术，是制造微型机械最有前途的方法，与传统半导体超微细加工方法相比，ＬＩＧＡ技术有以下优点：（１）用材广泛，可以是金属、陶瓷、聚合物及玻璃；（２）可加工任意复杂的图形结构；（３）可制造有较大高宽比的超微细元件；（４     

Proton beam writing and electroplating for the fabrication of high aspect ratio Au microstructures

We present an approach to fabricate tall high aspect ratio Au microstructures by means of proton beam direct writing. Combining proton beam direct writing and electroplating, we successfully produced gold structures with sub-micrometer lateral dimensions, structure heights in excess of 11 μm, and aspect ratios over 28. Sidewall quality of the Au structures was improved by lowering the process temperature to 20 °C when developing PMMA patterns with GG developer. The application of such structures as X-ray masks for deep X-ray lithography with synchrotron radiation was demonstrated.     

Nonlinear beam optics with real fields in compact storage rings

We analyze the proposed Karlsruhe electron storage ring for X-ray in-depth lithography using the 3rd order charged particle beam transport code MARYLIE 3.0. The ring features four 90° superconducting bending magnets. A numerical calculation of their field provides the longitudinal dependence of the multipole expansion coefficients. These are used by the code SCB to compute the Lie algebraic transfer map. Subsequent particle tracking with MARYLIE is employed to find dynamic apertures. Two different magnet designs which both lead to satisfactory dynamic apertures are presented.     

Schwarzschild microscopes in vacuum ultraviolet and soft X-ray regions

Microscopes in vacuum ultraviolet and soft X-ray regions using a normal incidence type of Schwarzschild objective are reviewed. The objective consists of a concave mirror and a convex mirror coated with a high reflectance multilayer, having a large numerical aperture comparing with other objectives. The microscopes have been used to diagnose inertia-confinement-fusion plasmas, and to investigate small samples or microstructures of inorganic and organic materials by imaging them using laboratory light sources. Synchrotron radiation has been also used to obtain a microbeam for a photoelectron scanning microscope with a spatial resolution of 0.1 μm. The structure and performance of two laboratory microscopes developed at Tohoku University are demonstrated. One of them is a soft X-ray emission imaging microscope, An image of an artificial pattern made of W and SiO2 on Si wafer by focusing Si L emission was presented, The other is an ultraviolet photoelectron scanning microscope using a He (helium) gas discharge lamp. The valence band spectra of a microcrystal of FeWO4 were presented, Furthermore other applications such as demagnifying optics for lithography and optics to gather fluorescence for emission spectroscopy are introduced.     

Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray Sources

A method for calculating electron transport in layered materials is described. It is applied to a problem of radiation damage in MOS capacitors irradiated with a Cu x-ray tube operated at 45 kV. The effects of photoelectron transport are found to be significant. A problem of energy deposition in x-ray lithography is also discussed. The dose in the SiO2 gate is found to be about equal to that in the x-ray photoresist. Electron transport effects are found to be small in this lithography problem.