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有机/无机杂化SiO2/Si光波导薄膜的制备及表征 总被引:1,自引:0,他引:1
采用有机/无机杂化溶胶-凝胶(sol-gel)法制备了SiO2光波导薄膜材料.采用甲基丙烯酰氧丙基三甲氧基硅烷(MAPTMS)作为反应先躯体,四丙氧基锆(ZPO)作为调节折射率的材料,正丙醇(n-propyl alcohol)为溶剂,利用旋涂方法在Si基片上成膜,采取低温长时间、高温短时间的热处理方式,制备出无龟裂薄膜.分别采用棱镜耦合仪和原子力显微镜(AFM)研究了不同溶剂量和不同ZPO量情况下,薄膜的折射率、厚度以及表面形貌变化情况.研究结果表明:通过调节正丙醇的用量,可以实现薄膜厚度可控;通过调节ZPO的用量,可以实现薄膜折射率可控;薄膜的表面平整度非常好,在5μm× 5μm的扫描范围内,表面粗糙度小于0.430 nm,表面起伏度小于0.656 nm. 相似文献
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利用射频磁控溅射方法,制成纳米SiO2层厚度一定而纳米Si层厚度不同的纳米(SiO2/Si/SiO2)/p-Si结构和纳米(SiO2∶Al/Si/SiO2∶Al)/p-Si结构,用磁控溅射制备纳米SiO2∶Al时所用的SiO2/Al复合靶中的Al的面积百分比为1%.上述两种结构中Si层厚度均为1—3nm,间隔为0.2nm.为了对比研究,还制备了Si层厚度为零的样品.这两种结构在900℃氮气下退火30min,正面蒸半透明Au膜,背面蒸Al作欧姆接触后,都在正向偏置下观察到电致发光(EL).在一定的正向偏置下,EL强度和峰位以及电流都随Si层厚度的增加而同步振荡,位相相同.但掺Al结构的发光强度普遍比不掺Al结构强.另外,这两种结构的EL具体振荡特性有明显不同.对这两种结构的电致发光的物理机制和SiO2中掺Al的作用进行了分析和讨论. 相似文献
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采用溶胶-凝胶(Sol-gel)法在热氧化的SiO2/Si(100)基片上提拉法制备掺EP:A12O3光学薄膜.采用扫描电镜(SEM)、原子力显微镜(ARM),X射线衍射分析(XRD)研究了掺Er3+:Al2O3光学薄膜的形貌、厚度以及结构等特性.结果表明,在氧化的SiO2/Si(100)基片上获得了厚度为1.2 μm,固溶Er3+的面心立方结构γ-(Al,Er)2O3和单斜结构θ-(A1,Er)2O3的薄膜.薄膜表面光滑、平整,无明显的表面缺陷.掺EP:Al2O3薄膜晶粒分布均匀,平均晶粒直径为50~200 m,表面起伏度为10~20 nm.测量了10 K下掺0.1 mo1%~1.5 mo1%Er3+:Al2O3光学薄膜的光致发光(PL)谱,获得了中心波长为1.533μm的发光曲线.PL强度随Er3+掺杂浓度的增加而下降,相应的半峰宽(FWHM)也从45 nm减小到36 nm.Sol-gel法制备掺Er3+:Al2O3/SiO2/Si光学薄膜满足有源光波导放大器基体材料的性能要求. 相似文献
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研究了单束双能高剂量Ge离子注入、不经过退火在非晶态SiO2薄膜中直接形成镶嵌结构Ge纳米晶的物理机制.实验中利用不加磁分析器的离子注入机,采用Ge弧光放电离化自动形成的Ge+和Ge2+双电荷离子并存的单束双能离子注入方法,制备了1016~1018cm-2多种剂量Ge离子注入的Si基SiO2薄膜样品.用GIXRD表征了Ge纳米晶的存在,并仔细分析得到了纳米晶形成的阈值剂量.通过TEM分析了Ge纳米晶的深度分布和晶粒尺寸.用SRIM程序分别计算了双能离子在SiO2非晶层的射程和深度分布,与实验结合,得到纳米晶形成的物理机制,即纳米晶的形成与单束双能离子注入时Ge+和Ge2+相互碰撞产生的能量沉积在SiO2中形成的局域高温有关. 相似文献
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在SiO2中掺A1对Au/纳米(SiO2/Si/SiO2)/p—Si结构电致发光的影响 总被引:1,自引:0,他引:1
利用射频磁控溅射方法,制成纳米SiO2层厚度一定而纳米Si层厚度不同的纳米(SiO2/Si/SiO2)/p-Si结构和纳米(SiO2:A1/Si/SiO2:A1)/p-Si结构,用磁控溅射制备纳米SiO2:A1时所用的SiO2/A1复合靶中的A1的面积百分比为1%。上述两种结构中Si层厚度均为1-3nm,间隔为0.2nm。为了对比研究,还制备了Si层厚度为零的样品。这两种结构在900℃氮气下退火30min,正面蒸半透明Au膜,背面蒸A1作欧姆接触后,都在正向偏置下观察到电致发光(EL)。在一定的正向偏置下,EL强度和峰位以及电流都随Si层厚度的增加而同步振荡,位相相同。但掺A1结构的发光强度普遍比不掺A1结构强。另外,这两种结构的EL具体振荡特性有明显不同,对这两种结构的电致发光的物理机制和SiO2中掺A1的作用进行了分析和讨论。 相似文献
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A single-transverse-mode erbium-doped glass waveguide laser operating at a wavelength of g 1.53 mu m is described. The erbium-doped GeO/sub 2/-SiO/sub 2/ core of the waveguide was made by electron-beam vapour deposition and patterned by reactive ion etching on a quartz glass substrate. The core was 10 mu m wide, 8 mu m high and 64.5 mm long, which permitted single-transverse-mode laser oscillation. The threshold pump power for CW oscillation was 150 approximately 200 mW at a pumping wavelength of 0.98 mu m.<> 相似文献
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Multicomponent glass is suited for the preparation of high numerical aperture (n.a.) fibres which may be used in short-distance applications. Low loss of 20dB/km fibres have been produced with a n.a. of 0.53. Core glass having high refractive index has been prepared by using the additives of BaO and GeO2 which are hardly harmful to the intrinsic absorption loss. 相似文献
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Graded-index fibres with a GeO2-P2O5-SiO2 core have been prepared by a modified c.v.d. and drawing process. The deposition rate of the core glass was 0.17 cm3/min (0.37 g/min), and the fibres have an attenuation of 2.6 dB/km at 0.83 ?m and a 6 dB bandwidth of 816 MHz km. 相似文献
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The letter investigates the dispersion of GeO2 glass core and F-doped GeO2 glass cladding single-mode optical fibre. It is estimated that the total dispersion goes to zero at about ? = 1.77 ?m. The material dispersions of these glasses are also measured. Material dispersion of GeO2 glass, which contains fluorine of 0.41 wt%, vanished at ? = 1.722?m. This occurs at ? = 1.734 ?m for pure GeO2 glass. 相似文献
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Optical glass fibres, consisting of an Al2O3-SiO2 core and SiO2 cladding, were produced by using a glass growth technique of vapour deposition in a flame. The core measured from 4 to 10 ? in diameter, and the difference in refractive index between the core and the cladding was 0.003. The lowest loss of this fibre was 10 dB/km at 0.66 ?m. 相似文献
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《Materials Science in Semiconductor Processing》2012,15(2):113-119
In this study, Silicon (Si) and glass substrates were coated with Zinc sulfide (ZnS) using Thermionic Vacuum Arc (TVA) technique for the first time. With this technique, the coating time of the samples is very short and film thickness can be controlled during the coating process. Moreover, TVA provides many advantages to deposited thin films than other techniques such as compactness, low roughness, nanostructures, homogeneities as compared to other deposition techniques. This paper presents a different technique for deposition of high-quality ZnS thin films. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and atomic force microscopy (AFM) were used to characterize the coated silicon and glass surface morphologies. Additionally, transmittances, thickness and refractive indices of coated glass samples with ZnS were measured by ultraviolet–visible spectrophotometer and interferometer to characterize their optical properties. 相似文献
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采用溶胶-凝胶方法在普通的载玻片上制备了CdS微晶掺杂的TiO2-SiO2复合薄膜。用正硅酸乙酯、钛酸丁酯、醋酸镉作原料,比较了硫脲和硫化乙氨的硫化作用。不同热处理温度、时间的吸收光谱表明,薄膜中存在着量子尺寸效应。采用Z-Scan技术测量了薄膜的非线性吸收及非线性折射率。 相似文献