磁控溅射法制备SnO2-CuO薄膜及其气敏特性研究

用直流磁控溅射法分别在Si及陶瓷管上制备掺有CuO的SnO2纳米薄膜,并用马弗炉进行500 ℃和700 ℃的退火处理.利用气敏测试系统对各样品进行气敏特性测试,500 ℃退火的样品对几种被测气体基本都有较高的灵敏度,且随着工作温度的提升,气敏特性下降.700 ℃退火的样品对乙醇具有很好的选择性,表现较好的灵敏度,当最佳工作电压为6.5 V时,在乙醇气体小注入条件下,对样品的测试体现了样品良好的气敏特性.     

ZnO薄膜的丙酮气敏特性研究

用直流磁控反应溅射法,分别在Si(111)基片及Al2O3陶瓷基片上制备了ZnO薄膜,并进行TiO2、SnO2、Al2O3或CuO的掺杂和退火处理。用XRD分析了退火前后晶型的变化,利用气敏测试系统对各样品进行了气敏特性测试。结果表明:经过700℃退火后的样品,在最佳工作温度为220℃时,对丙酮有很好的选择性和很高的灵敏度(34.794)。掺杂TiO2或SnO2,可提高ZnO薄膜传感器对丙酮的灵敏度(57.963)。     

Sol-gel法制备ZnO-TiO_2厚膜及其气敏特性研究

以钛酸丁酯的水解反应制备了ZnO掺杂的纳米TiO2厚膜。通过XRD和SEM对不同退火温度下制备出的不同掺杂量的ZnO-TiO2粉体进行物相分析和表面形貌比较,并利用气敏测试系统检测其气敏特性。讨论了掺杂量和退火温度对ZnO-TiO2厚膜气敏特性的影响,同时分析了其气敏机理。结果表明:700℃退火,w(ZnO)=4%的ZnO-TiO2结晶尺寸达到26.8 nm,体现出对丙酮蒸气单一的选择性,灵敏度为8 913,响应和恢复时间均为2 s。     

sol-gel法制备CuO掺杂的TiO_2厚膜及其气敏特性

采用溶胶凝胶法制备了纯TiO2和掺杂质量分数为5%,7%和9%CuO的TiO2纳米粉体,并对样品进行了不同温度(500,700和900℃)的退火处理。通过涂敷法制备成气敏元件,利用XRD和SEM对样品的结构和表面形貌进行了表征,并利用气敏测试系统检测其气敏特性。研究了CuO掺杂质量分数和退火温度对TiO2厚膜气敏性能的影响,进一步讨论了TiO2厚膜的气敏机理。结果表明:CuO的掺杂有效抑制了TiO2晶粒的生长,增加了对光子的利用率,降低了工作温度,提高了气敏特性。700℃退火后,质量分数为7%的CuO掺杂TiO2样品的结晶尺寸达到14.5 nm,气敏元件表现出对丙酮蒸汽单一的选择性,灵敏度为3 567,响应和恢复时间均为2 s。     

Al掺杂ZnO厚膜的sol-gel法制备及其气敏性能研究

以硝酸锌、硝酸铝和氢氧化钠为原料,采用sol-gel法制备铝掺杂的纳米氧化锌厚膜(样品),并利用XRD和SEM对其微观结构进行了表征。研究了铝掺杂量和退火温度对ZnO厚膜的气敏性能的影响。结果表明:700℃退火、掺w(Al)为2.9%的样品对体积分数为4.0×10–1的丙酮有很好的选择性,最大灵敏度达到7 779左右,最佳工作温度约为162℃,响应、恢复时间均为1 s,最后讨论了铝掺杂纳米氧化锌的气敏机理。     

紫外光照下ZnO基薄膜的光电和气敏特性研究

用sol-gel法制备ZnO及掺杂Al3+的ZnO半导体薄膜,利用XRD和AFM对薄膜结构和形貌进行表征。测量了不同掺Al量的薄膜在紫外光照射下电阻的变化,发现随着掺Al量的增大,薄膜在紫外光(波长为365nm)照射后其电阻先减小后增大。在室温下,对薄膜在不同浓度的CO气体下的敏感特性进行了研究,随着气体浓度的增加,薄膜电阻值逐渐减小;随着掺Al量的增大,气敏灵敏性先逐渐增大后减小,发现当铝含量为r(Al:ZnO)=0.5%时,对CO气体的灵敏度最大,并对紫外光照射下气敏半导体薄膜的气敏机理进行了简单分析。     

纳米ZnO基掺杂气敏元件阵列的制备与特性

以金属蒸气氧化法制备的纯纳米ZnO为气敏原料,通过丝网印刷技术在Al2O3基片上制得纯ZnO和掺杂ZnO的气敏元件阵列。结果表明,元件阵列具有低的功耗,纯ZnO气敏元件阵列在350~400℃对橙汁、可乐、酒精和汽油有较高的敏感性,灵敏度分别为2.9,2.9,53.5和43.4。通过Bi2O3+Cu2O的掺杂,可以降低纯ZnO的电导,并进一步提高气敏元件在250~350℃温度区间对汽油的敏感性。并对其气敏机理进行了探讨。     

四针状ZnO晶须(T-ZnO)的掺杂及其气敏特性研究

采用高温固溶工艺制备了Al3+,Fe3+和Ag+掺杂的T-ZnO气敏材料,并制作了烧结型厚膜气敏元件,测试了元件对H2S,NH3,C2H5OH和H2的敏感特性,研究了掺杂剂、掺杂工艺和材料形貌结构对T-ZnO材料气敏特性的影响规律。结果显示,T-ZnO材料对H2S和C2H5OH气体灵敏度较高,对H2和NH3等气体灵敏度较差;经过H2气氛热处理,掺物质的量百分数为0.1%Al3+的T-ZnO对气体表现出很高的灵敏度,在268.5℃时,对体积分数为10-4的H2S的灵敏度达160;同时,Al3+掺杂工艺改善了材料对H2S和C2H5OH的恢复-响应特性。在Fe3+掺杂ZnO样品中,出现第二相(ZnFe2O4)可以提高对气体的灵敏度。     

紫外光照下金属氧化物薄膜气敏特性研究进展

介绍了近期文献中对紫外光照下半导体金属氧化物薄膜气敏特性的研究结果:紫外光照引起SnO2,In2O3,ZnO薄膜电导显著增大;提高室温下薄膜对CO,NO2气体检测的灵敏度,减少响应和恢复时间;介绍了一种对紫外光增强气敏机制的物理模型分析方法。最后讨论了当前存在的难点问题(室温下气体检测的灵敏度不高及使用紫外光源不便)及未来研究方向(借改变薄膜的制备方法、工艺条件、优化金属氧化物薄膜的结构;通过掺杂复合改变薄膜的成分以及寻找禁带宽度窄的半导体材料等)。     

退火温度对生长在TiO2缓冲层上的ZnO薄膜的影响

采用电子束蒸发技术在TiO2缓冲层上沉积了ZnO薄膜,研究了不同的退火温度对薄膜晶化质量及发光性质的影响.利用X射线衍射仪和扫描探针显微镜分析了薄膜样品的结构性质,利用荧光光谱仪研究了薄膜样品的光致发光性质.分析结果表明,退火处理后的ZnO薄膜都沿c轴择优牛长.在600℃下退火的样品具有最强的(002)衍射峰、最强的紫外发射和最弱的可见光发射,其晶粒大小均匀.紧密堆积.而对于在500和700℃下退火的样品,其可见光发射较强.这表明在600℃下退火的样品具有最好的晶化质量.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks