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Compressive creep of SiC-whisker-reinforced Al2O3 composites (0, 5, 15, and 25 wt% SiC) was measured in the temperature range of 1300° to 1500°C in air and argon. The creep resistance increased with increasing whisker concentration. The results indicated that the whiskers degraded in air, increasing strain rates compared to those in argon. Stress exponents between 1.0 and 2.0 and an activation energy of 620 ± 100 kJ/mol were measured. Transmission electron microscopy observations indicated that cavitation was minimal and that the deformed composites had the same dislocation structure as did the as-received samples.  相似文献   

3.
Polycrystalline Al2O3 was chemically vapor-deposited onto sintered Al2O3 substrates by reaction of AlCl3 with (1) H2O, (2) CO:H2, and (3) O2 at 1000° and 1500°C and 0.5 and 5.0 torr. Although the thermodynamics of all these reactions predict the formation of solid Al2O3, the deposition rate of the first reaction was considerably greater than that of the second. The third reaction was so slow that no measurable deposit was formed in 6 h at 1500°C. Formation of dense deposits of α-Al2O3 was favored by increasing temperature and decreasing pressure. Microstructural examination of the dense deposits showed long columnar grains, the largest of which extended through the deposit from the substrate to the surface.  相似文献   

4.
Aluminum oxide single crystals deformed by dislocation glide and deformation twinning during compressive creep at 1400° to 1700°C. The activation energy for basal slip was a function of the applied stress and agreed with activation energies previously measured by observation of yielding phenomena. The overcoming of a large Peierls-Nabarro stress is the most probable rate-controlling mechanism. Rhombohedral twinning, a significant deformation mode in creep, depends on surface damage for nucleation. The activation energy for rhombohedral twin growth, a function of the applied stress, is substantially lower than that for basal slip. When basal slip and rhombohedral twinning occur concurrently, creep by basal slip results, but the presence of twins can substantially reduce the creep rate.  相似文献   

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Samples of 65 μm-grain-size AL2O3 containing 0.05 wt% Mg and 40 μm-grain-size AL2O3 containing 0.13 wt% Mg, both MgO-saturated, undergo compressive deformation in the range 1580° to 1800°C with results interpreted as diffusional creep rate-limited by grain-boundary diffusion with the Coble boundary-diffusion model giving
A lower deformation rate for an unsaturated composition indicates that MgO additions enhance grain-boundary diffusion.  相似文献   

7.
Steady-state creep experiments were performed on hot-pressed polycrystalline MgO doped with Fe. Dead-load 4-point bend creep tests were conducted at stresses of 26 to 270 kg/cm2, at temperatures of 1250° to 1450°C, in O2 partial pressures of 1 to 10−9 atm, on specimens with grain sizes of 10 to 65 μm. Viscous steady-state creep was always observed when the grain size was stable. Experiments at variable P O2's and temperatures were used to identify regimes of high (117 ± 10 kcal/mol) and low (81 ± 5 kcal/mol) activation energy. In the latter, creep rates were nearly independent of Fe dopant concentration and P O2, whereas in the former creep rates were enhanced by increasing P O2's and Fe dopant levels. The high- and low-activation-energy regimes were interpreted as diffusional creep controlled primarily by Mg lattice diffusion and O grain-boundary diffusion, respectively.  相似文献   

8.
Adiabatic bulk modulus, Bs , of polycrystalline MgO and Al2O3 was measured from 298° to 1473°K using the resonance technique. The Grüneisen constant, calculated from the measured bulk modulus, was constant over the whole temperature range (1.53 for MgO and 1.34 for Al2O3). Another important parameter,     , is constant at high temperature and is 3.1 for MgO and 3.6 for Al2O3. The Poisson's ratio increases linearly with temperature for MgO and Al2O3. To describe the change of bulk modulus with temperature a theoretical equation was verified by using the foregoing constants. A practical form of this theoretical equation is where Bs0 is the adiabatic bulk modulus at 0°K, δ is the quantity     , γ is the Grüneisen constant, H is the enthalpy. The experimental data are described very well by this equation, which is equivalent to the empirical equation suggested by Wachtman et al., BsT= Bs0 - CT exp (-Tc/T) , where C and Tc are empirical constants.  相似文献   

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Steady-state creep was studied in hot-forged polycrystalline Al2O3 (3 to 42 μm) of nearly theoretical density doped with≤1 cation % of Fe, Ti, or Cr. Tests were conducted at stresses between 10 and 550 kg/cm2 at 1375° to 1525°C under O2 partial pressures of 0.88 to 10−10 atm. Except in the 10-μm Fe-doped material tested at very small stresses, slightly nonviscous creep behavior was generally observed. The effects of P o2 on the creep rate indicated that increased concentration of a divalent (Fe2+) or quadrivalent (Ti4+) impurity in solid solution enhances the creep rate of polycrystalline Al2O3. The activation energies for the creep of Fe- and Ti-doped Al2O3 samples (148 and 145 kcal/mol, respectively) were significantly higher than that for Cr-doped material (114 kcal/mol). Taking into account the effects of Po2, temperature, and grain size, it was concluded that the steady-state creep of transition-metal-doped Al2O3 is controlled by cation lattice diffusion.  相似文献   

11.
The sintering behavior of an Al2O3 compact containing uniformly dispersed Al2O3 platelets has been investigated. The results reveal a significant decrease in the sintering rate as well as the formation of voids and cracklike defects in the presence of nonsinterable platelets. The addition of a small amount (2 vol%) of tetragonal-ZrO2 particles enhances the sintering rate, increases end-point density (∼99.5% of theoretical density) and prevents formation of sintering defects.  相似文献   

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The compressive creep properties of hot-pressed Si3N48Y2O3—3Al2O3 (wt%) have been investigated in the temperature range of 1543–1603 K in air. The stress exponent, n , of the power creep law was determined to be 1.5, and the activation energy was determined to be 650 kJ/mol. Transmission electron microscopy observations showed that grain-boundary sliding occurred with cavitation formation in the grain-boundary glassy phase. The quasi-steady-state creep results were consistent with that of the diffusion-controlled solution—diffusion—precipitation creep mechanism, and the distinguished failure mechanism was cavitation creep damage controlled by the viscosity of the boundary glassy phase. The compressive creep failure time, obtained at 1573 K, in the stress range of 175–300 MPa, followed the MonkmanGrant relation, indicating that cavity growth was mainly controlled by the creep response of the material.  相似文献   

14.
The dynamic stress intensity factors, which were determined with newly developed bar impact facilities and a new data reduction procedure, for an Al2O3 ceramic and 29 vol% SiCw/Al2O3 composite were virtually identical, thus indicating that the short SiC whiskers were ineffective under dynamic fracture. SEM studies revealed five distinct fracture morphologies with increased percentage area of transgranular fracture in both materials with rapid crack propagation. Also, the high dynamic stress intensity factor caused multiple microscopic crack planes to form and then join as the crack advanced.  相似文献   

15.
The spark plasma sintering (SPS) technique was used to produce mid-infrared (IR) transparent alumina with the desired transmittance. An excellent transmittance of 85% has been obtained in a sample sintered at 1300°C for 5 min. The heating rate, sintering time, and annealing have a significant influence on IR transmittance. The improvement in transmission may be attributed to the progressive elimination of residual porosity when applying a slower heating rate, longer sintering time during SPS, and postsinter annealing. It is suggested that localized residual strain/stress at grain boundaries and oxygen vacancy concentration are other factors influencing the optical properties of the SPS-sintered alumina.  相似文献   

16.
Composites containing Ce-ZrO2, Al2O3, and aligned Al2O3 platelets were produced by centrifugal consolidation and pressureless sintering, followed by heat treatments at 1600°C for varied duration. Constituents in the consolidated microstructures were either uniformly distributed throughout or segregated into gradient layers, depending critically on platelet content. Quantitative image analysis was used to examine microstructure development with heat treatment. Changes in the volume fraction, dimensional anisotropy, and gradient of pores and platelets, as well as changes in the phase gradient, were quantified. Microstructure development was strongly dependent on the initial microstructure design attained from suspension processing.  相似文献   

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Partial ionic and electronic dc conductivities and compressional creep rate were measured for hot-pressed poly crystalline AI2O3 made from AI-isopropoxide (AI2O3(II)). The undoped material was found to contain 1.5×1018 cm−3 fixed valency acceptors (Mg). Properties of undoped material and material doped with Fe or Ti were investigated as a function of grain size, dopant concentration, oxygen pressure, and temperature. No fast ionic conduction along grain boundaries is found in either acceptor- or donor-dominated material. Absolute values of self-diffusion coefficients calculated from conductivity and creep indicate that both effects are limited by migration of AI, involving V AI"in donor-, AI," in acceptor-dominated material. In creep, oxygen is transported along grain boundaries in a neutral form (Oip). The pO2 dependence of σ t and σ h are as expected on the basis of a defect model. That of creep is weaker for reasons that are not entirely clear. An ionic conductivity with low activation energy, observed at low temperature, is attributed to the presence of AI-silicate second phase.  相似文献   

19.
The electrical conductivity and ion/electron transference numbers in Al3O3 were determined in a sample configuration designed to eliminate influences of surface and gas-phase conduction on the bulk behavior. With decreasing O2 partial pressure over single-crystal Al2O3 at 1000° to 1650°C, the conductivity decreased, then remained constant, and finally increased when strongly reducing atmospheres were attained. The intermediate flat region became dominant at the lower temperatures. The emf measurements showed predominantly ionic conduction in the flat region; the electronic conduction state is exhibited in the branches of both ends. In pure O2 (1 atm) the conductivity above 1400°C was σ≃3×103 exp (–80 kcal/ RT ) Ω−1 cm−1, which corresponds to electronic conductivity. Below 1400°C, the activation energy was <57 kcal, corresponding to an extrinsic ionic condition. Polycrystalline samples of both undoped hot-pressed Al2O3 and MgO-doped Al2O3 showed significantly higher conductivity because of additional electronic conduction in the grain boundaries. The gas-phase conduction above 1200°C increased drastically with decreasing O2 partial pressure (below 10−10 atm).  相似文献   

20.
Oxide crystallite formation and growth from freeze-dried sulfates were studied for the representative materials Al2O3 and Fe2O3. Transmission and scanning electron micrographs showed the formation and growth of chainlike aggregates of crystallites. Aggregation occurred as part of the nucleation and growth of the oxide, and discrete oxide particles were never present. Orientation of the chain aggregates was related to the ice structure formed during freezing. X-ray line broadening data showed that crystallite size is a function of the 1/5 to 1/7 power of time for isothermal treatments. A qualitative analysis of material transport favored the surface diffusion mechanism.  相似文献   

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