共查询到19条相似文献,搜索用时 62 毫秒
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文章运用Monte Carlo方法模拟具有高斯分布特征的低能入射电子束斑在PMMA-村底中的复杂散射过程,分别得到了电子束在抗蚀剂中的穿透深度和能量沉积分布圈,并利用模拟结果进行邻近效应的修正.得到修正后的剂量数据文件。结果表明:采用修正后的剂量曝光,光刺胶中的能量沉积比较均匀.曝光分辨率有较大幅度的提高。该研究将对低能电子束曝光技术的定量研究和邻近效应修正技术的探索具有较高的理论指导意义。 相似文献
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本文叙述了国际上电子束曝光技术的发展趋势,分析了我国电子束曝光技术的发展现状,回顾了电子部四十八所电子束曝光技术的进展及其在微电子器件制造中成功的应用。 相似文献
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<正>由于大规模集成电路集成度与微波半导体器件使用频率的提高,使得这类器件在制造时,要求刻蚀出亚微米的线条。一般的远紫外光学曝光技术已很难满足这一要求,因而高分辨率的电子束曝光技术及软X射线曝光技术得到了广泛的重视和研究。当前国际上已研制出刻蚀精度高达0.02μm的线条,并可制备高分辨率掩模版及直接在芯片上刻蚀的高分辨率电子束曝光机。运用直线电子加速器产生软X射线的曝光方法也可以制备这类器件。 相似文献
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本文利用双高斯形式的邻近函数来表达电子束在抗蚀剂中能量的分布,并以邻近函数为基础计算一些简单图形在曝光时所需的尺寸改变量.通过与实验的比较来说明该方法的可靠性,并对所得结果进行讨论和分析. 相似文献
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A. Ouabbou J.P. Martinez F. Lalanne P. G rard J.L. Balladore 《Microelectronic Engineering》1993,20(4):255-275
A computer software is developed for calculation of the energy density distribution in the SAL 601 resist. In the case of a point source electron beam both lateral and depth evolution of the energy deposition are determined. Simulation of a line source is then achieved. Different geometries are modelled; the equidensity energy contours are obtained. The proximity effects are studied notably for isolated lines and arrays of lines and spaces. 相似文献
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Experiments have been performed to determine the accuracy of the proximity function model in predicting feature dimensions
for two positive electron resists. The model parameters were determined from the linewidth versus dose relationship for single
beam scans. A small systematic ‘overdevelopment’ error was found in the calculated patterns, which is attributed to the limitations
of the model assumptions. 相似文献
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A new method for determining proximity parameters α,β,and η in electron-beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron-beam lithography on the same experimental conditions. 相似文献
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Youngsang Kim 《Microelectronic Engineering》2008,85(3):582-586
We have characterized the electron beam lithography (EBL) properties of the new negative tone resists, ma-N2410 and ma-N2405. These negative resists reacts under low electron dose values from 10 to 140 μC/cm2, tested using 10, 20, 28 keV electron beam. There was negligible loss of pattern height, which was attributed to the combined dose of the incident electron beam and the backscattered electrons. Experimental tests were performed under various EBL writing conditions of dose value, developing time, line-width and resist thickness. Our investigation showed that these new commercially available resists have high resolution and high contrast with non-chemical amplification, useful for micro-fabrication application. 相似文献
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Jens Bolten Thorsten WahlbrinkMathias Schmidt Heinrich D.B. GottlobHeinrich Kurz 《Microelectronic Engineering》2011,88(8):1910-1912
An electron beam lithography exposure strategy combining efficient proximity effect correction (PEC) with multi-pass grey scale is compared with a more conventional strategy based on a single-pass exposure without PEC. Exposure results for different types of nanowire structures are presented. Line edge and line width roughness (LER and LWR) values for both approaches are determined. The novel exposure strategy presented in this work reduced LER by ∼25% and LWR by ∼40%. 相似文献
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