Integrated Mach-Zehnder-based 2x2 all-optical switch using nonlinear two-mode interference waveguide

The Mach-Zehnder interferometer (MZI) is a common structure for integrated all-optical switches. We proposed and designed an all-optical 2x2 switch that is based on the MZI, multimode interference, and a nonlinear two-mode interference waveguide. The beam propagation method is used to simulate and analyze the device. The results show that the switching action is done properly.     

Photonic crystal directional coupler for all-optical switching,tunable multi/demultiplexing and beam splitting applications

In this paper, we introduce a new configuration based on the combination of photonic crystal directional coupler and nonlinear electromagnetically induced transparency (EIT) phenomenon in solid-state materials. The proposed structure has the abilities of switching, tunable multi/demultiplexing and tunable power beam splitting. These applications are attainable in the same structure by modulating the refractive index of special regions via EIT effect. This effect causes a high reduction in the required optical control power for the desired refractive index change, compared to the other nonlinear methods. Band structure calculations and simulations of optical field propagation through the device are done by plane wave expansion and finite difference time domain methods, respectively. In the switching mechanism, extinction ratios of 11.38?dB in the linear regime (with the control signal being off) and 26.63?dB in the nonlinear regime (with the presence of control signal) are achievable. Also, the proposed structure operates as a two-channel multi/demultiplexer for wavelengths of 1550?nm and 1480?nm in the linear regime, for wavelengths of 1550?nm and 1600?nm in both linear and nonlinear regimes, and for wavelengths of 1480?nm and 1600?nm in the nonlinear regime (the nonlinear regime is the same as the nonlinear regime for the switching). Since different refractive indices are obtained by changing the power of the control signal, the wavelengths for multi/demultiplexer operation can be tunable. Finally, simulation results show that the suggested structure can operate as a tunable power beam splitter at the wavelength of 1550?nm.     

Actively controllable EIT-like resonance between localized and propagating surface plasmons for optical switching

We theoretically investigate the plasmonic interaction between radiative localized surface plasmon resonances and subradiative propagating surface plasmon modes in a nanostructure consisting of a periodic array of gold nanobars and an optically thick gold film, separated by a silica dielectric spacer layer. A controllable transparency window within the broad dipole resonance profile is observed clearly in the reflectance spectra via tailoring the length of the bar, the periodicity of the nanoparticle array, or the incident angle of applied field, respectively, a classic analog of electromagnetically induced transparency (EIT). We believe that the last excitation configuration is particularly beneficial for the realization of active manipulation of plasmonic optical switching without using coupling/control fields required in the conventional EIT scheme.     

Phase time delay and Hartman effect in a one-dimensional photonic crystal with four-level atomic defect layer

The Hartman effect is revisited using a Gaussian beam incident on a one-dimensional photonic crystal (1DPC) having a defect layer doped with four-level atoms. It is considered that each atom of the defect layer interacts with three driving fields, whereas a Gaussian beam of width w is used as a probe light to study Hartman effect. The atom–field interaction inside the defect layer exhibits electromagnetically induced transparency (EIT). The 1DPC acts as positive index material (PIM) and negative index material (NIM) corresponding to the normal and anomalous dispersion of the defect layer, respectively, via control of the phase associated with the driving fields and probe detuning. The positive and negative Hartman effects are noticed for PIM and NIM, respectively, via control of the relative phase corresponding to the driving fields and probe detuning. The advantage of using four-level EIT system is that a much smaller absorption of the transmitted beam occurs as compared to three-level EIT system corresponding to the anomalous dispersion, leading to negative Hartman effect.     

Switching of ± 360° domain wall states in a nanoring by an azimuthal Oersted field

We demonstrate magnetic switching between two 360° domain wall vortex states in cobalt nanorings, which are candidate magnetic states for robust and low power magnetoresistive random access memory (MRAM) devices. These 360° domain wall (DW) or 'twisted onion' states can have clockwise or counterclockwise circulation, the two states for data storage. Reliable switching between the states is necessary for any realistic device. We accomplish this switching by applying a circular Oersted field created by passing current through a metal atomic force microscope tip placed at the center of the ring. After initializing in an onion state, we rotate the DWs to one side of the ring by passing a current through the center, and can switch between the two twisted states by reversing the current, causing the DWs to split and meet again on the opposite side of the ring. A larger current will annihilate the DWs and create a perfect vortex state in the rings.     

Electromagnetically induced transparency and steady-state propagation characteristics in Doppler broadened diamond systems

We explore the feasibility of attaining simultaneous electromagnetically induced transparency (EIT) and efficient nonlinear generation in different configurations of Doppler broadened diamond (double-cascade) systems such as, the frequency up-conversion, nearly degenerate and degenerate scheme. We show that EIT and nonlinear generation efficiency depend critically on the type of residual Doppler broadening present in each of the two cascade subsystems constituting the diamond system. Furthermore, it is observed that nonlinear generation with perfect EIT simultaneously in both subsystems is not possible as the process of nonlinear generation actually tends to oppose EIT. Yet in an extended medium, on resonance field propagation under matched conditions for probe and generated signal can occur when a balance (equilibrium) is established between these two competing processes.     

Low-power and high-speed thermo-optic switch using hybrid silica/polymer waveguide structure: design,fabrication and measurement

Response speed and power consumption are improved for a Mach–Zehnder interferometer (MZI) thermo-optic (TO) switch, by using a hybrid silica/polymer waveguide structure and optimizing both the thickness of the silica under cladding and that of the PMMA-GMA upper cladding. Fabrication techniques, including chemical vapor deposition (CVD), spin-coating and wet-etching, are adopted to develop the switch sample. Under 1550?nm wavelength, the driving powers under ON and OFF states are measured to be 0 and 13?mW, respectively, indicating a switching power of 13?mW. The fiber-to-fiber insertion loss under the ON state is 15?dB, the extinction ratio between the ON state and the OFF state is 18.3?dB, and the rise time and fall time are 73.5 and 96.5?µs, respectively. Compared with the TO switches based on Si/SiO₂ or all-polymer waveguide structure, the proposed device possesses both low power consumption and fast response speed, by virtue of the large TO coefficient of the polymer core, thin upper/under claddings and the large thermal conductivity of silica.     

Use of the asymmetric planar hall resistance of an Fe film for possible multi-value memory device applications

Systematic planar Hall measurements have been performed on a ferromagnetic Fe film grown on a standard (001) GaAs substrate at room temperature. The angular dependence of the planar Hall effect revealed the presence of both four-fold (cubic) and two-fold (uniaxial) anisotropies in the 7 nm thick Fe film. The dominance of the four-fold symmetric anisotropy, however, provided four magnetic easy axes near the (100) direction, which results in a two step switching phenomenon in the magnetization reversal process. An interesting asymmetric hysteresis loop was observed in the planar Hall resistance (PHR) when the turning point of the field scan is set at the value in the region of the second transition. The intermediate resistance states appearing in the asymmetric PHR loop were understood in terms of mutli-domain structures formed during the second switching of magnetization. Such multi-domain structure of the Fe film showing robust time stability provided additional Hall resistance states, which can be used for multi-valued memory device applications.     

Design of an ultracompact low-power all-optical modulator by means of dispersion engineered slow light regime in a photonic crystal Mach-Zehnder interferometer

We present the design procedure for an ultracompact low-power all-optical modulator based on a dispersion-engineered slow-light regime in a photonic crystal Mach-Zehnder interferometer (PhC MZI), selectively infiltrated by nonlinear optical fluids. The dispersionless slow-light regime enhancing the nonlinearities enabled a 22 μm long PhC MZI to operate as a modulator with an input power as low as 3 mW/μm. Simulations reveal that the switching threshold can be controlled by varying the optofluidic infiltration.     

Application of fluorine doped oxide (SiOF) spacers for improving reliability in low temperature polycrystalline thin film transistors

The novel process of self-aligned fluorine doped oxide (SiOF) spacers on low temperature poly-Si (LTPS) lightly doped drain (LDD) thin film transistors (TFTs) is proposed. A fluorine doped oxide spacers were provided to generate the lower dissociation Si-F bonds adjusted to the interface of the drain which is the largest lateral electric field region for lightly doped drain structure. The stronger Si-F bonds can reduce the bonds broken by impact ionization. It is found that the output characteristics of SiOF spacers TFTs show the superior immunity to kink effect. The degradations in Vth shifting, subthreshold slope, drain current and transconductance of SiOF spacers after DC stress are improved.     

Two carriers in vertically coupled quantum dots: magnetic field effect

We study a two-charge-carrier (two holes or two electrons) quantum dot molecule in a magnetic field. In comparison with the electron states in the double quantum dot, the switching between the hole states is achieved by changing both the inter-dot distance and magnetic field. We use harmonic potentials to model the confining of two charge carriers and calculate the energy difference delta E between the two lowest energy states with the Hund-Mulliken technique, including the Coulomb interaction. Introducing the Zeeman effect, we note a ground-state crossing, which can be observed as a pronounced jump in the magnetization at a perpendicular magnetic field of a few Tesla. The ground states of the molecule provide a possible realization for a quantum gate.     

Temporal soliton switching in a rectangular nonlinear directional coupler

We address the theory of temporal soliton switching in a planar geometry directional coupler constructed from silica and doped silica glass and operating at the central wavelength of 1.55 mum, significant for erbium-doped amplification. We formulate the field in the coupler in terms of the supermodes of the total structure and take account of the two transverse dimensions of the rectangular channels. In the case of the weak coupling between channels consistent with elimination of pulse breakup, the effect of the fields in the outer corner regions of the channels results in a switching intensity that differs significantly from that derived from coupled-mode theory on the basis of a slab model of the coupler.     

3D characterization of microstructured poly(methacrylic acid) thin films via Mach-Zehnder interference microscopy

We demonstrate the adaption of a further developed Mach-Zehnder interference (MZI) microscope for the rapid 3D characterization of transparent microstructured polymer thin films. In order to quantify the accuracy of the Mach-Zehnder interferometer, comparative film thickness measurements of photolithographically patterned poly(methacrylic acid) polymer brushes are performed employing two alternative techniques: white light profilometry (WIM) and atomic force microscopy (AFM). When the refractive index of the polymer brushes is calculated from MZI data, we obtain a good agreement with results received from an independent method (ellipsometry).In contrast to surface probing techniques such as AFM or WIM, Mach-Zehnder interferometry is a transmitted light method that measures both surface height profiles and refractive index distributions. MZI thus enables the quantification of film homogeneity with respect to height and density variations at the lateral resolution of a refraction limited microscope. We conclude that MZI is an adequate tool for the rapid and non-destructive characterization of structured polymer thin films. This method should be particularly useful for production quality control of microstructured polymer thin films which possess great potential in electronic device fabrication and biotechnology.     

Filters based on spoof surface plasmon polaritons composed of planar Mach–Zehnder interferometer

Abstract

Filter characteristics of a planar Mach–Zehnder interferometer (MZI) structure composed of periodically thin corrugated metal films were studied here. From theoretical simulation, spoof surface plasmon polaritons can propagate along the periodically thin corrugated metal films in microwave frequency, which can be excited by a coplanar waveguide. When the two arms of the MZI have the same length with the angle between them being 60°, the MZI structure has a very wide bandwidth with 8.6 GHz. By changing the length of one of the interference arms, a novel low-pass filter based on the planar MZI structure with two notched frequencies was proposed. The proposed planar structure can find potential applications in developing surface wave devices in integrated microwave circuits and systems.     

Using phase dynamics in EIT to probe ground state relaxation in rubidium vapor

We have studied a time response of electromagnetically induced transparency (EIT) in a rubidium vapor to a rapid variation of optical phase. We have observed a very fast growth of the absorption when the phase of the optical field has been abruptly changed, followed by a slow return to the level of steady-state absorption. The recovery time decreases with increasing optical power. A simple theoretical analysis shows that under our experimental conditions the low power limit of the recovery time is determined by the ground relaxation time. In our case it is defined by a time-of-flight of rubidium atoms through laser beam. The obtained value of the ground state relaxation time is in a good agreement with result of direct measurements by ‘relaxation in the dark’ method. Our technique based on phase dynamics in EIT can be used for investigation of the ground state relaxation and the fast control of EIT.     

Current-induced domain-wall motion in U-shaped permalloy wire

The current-induced domain-wall motion has been observed by using a U-shaped permalloy wire. We observed two magnetic states in a U-shaped pattern. One is the vortex domain wall at the center of semicircular arc region of the U-shaped pattern, and the other is the continuous magnetic state without the domain wall in between. In general, the current density of the order of /spl sim/10/sup 7/ A/cm/sup 2/ is needed to drive a magnetic domain wall. In this paper, the critical current for domain-wall motion increases as the bias field increases. The bias field means the field deviated from the switching field of the wire.     

Impurity modulated excitation profile of doped quantum dot subject to oscillatory magnetic field

We explore the excitation profile of a repulsive impurity doped quantum dot under periodically fluctuating magnetic field. We have considered Gaussian impurity centers. The investigation reveals the roles subtly played by the dopant coordinate and the region of influence of the dopant to modulate the excitation pattern. The rate of transition to the excited states has been invoked to analyze the interplay between the above two impurity parameters in influencing the excitation process. The ratio of cyclotron frequency and harmonic confinement potential has important impact on excitation rate.     

The effect of a space charge on the operation of a high-power semiconductor current interrupter

A theoretical model has been developed that describes operation of a high-power semiconductor current interrupter (SOS diode) with allowance for the space charge formation. According to this model, as well as to the models based on the quasineutral approximation, the process of current breakage in a semiconductor structure of the SOS diode is related to the formation of strong field regions in highly doped parts of the structure. The space charge decreases the role of avalanche multiplication, thus providing for higher switching characteristics of the diode.     

Poled Composites with Nd-Mn-Doped PZT Fibers Under Bipolar Electrical Load

Using the sol-gel process, Nd-Mn-doped PZT fibers were produced. The PZT was doped with 2 mol% neodymium and 1.1 mol% manganese. For characterization, the fibers were embedded in a polymer. The resulting 1-3 composites were poled with constant electric field. Strain and polarization were measured by applying a bipolar sinusoidal voltage of high amplitude. Instead of the expected shifted butterfly-shaped strain hysteresis, an asymmetric strain-field relation was observed. It is characterized by a rather linear region in direction of the poling field and an inflated region without strain switching for reversed polarity. Within the temperature range from room temperature to 80degC, the strain switching seems to be suppressed. Measurements of the piezoelectric coefficient at superimposed electric field prove the blocking of strain switching. Cyclation experiments with sesquipolar load show a pronounced linearity of the strain loops that declines after more than 2 times 10⁴ cycles.     

Scanning magnetoresistive microscopy study of quasi-static magnetic switching in mesoscopic square dots: observation of field-driven transition between flux-closure states

We used newly developed scanning magnetoresistance microscopy (SMRM) to observe time-lapsed magnetic domain images during magnetic switching in square Permalloy dots. Unlike magnetic force microscopy, the SMRM images measure the absolute local magnetic field from any microstructure. SMRM works in an external magnetic field, allowing the measurement of evolution of quasi-static domain structures. We observed a complete magnetic reversal in 5 /spl mu/m Permalloy dots from a positively saturated state to a negatively saturated state via a mixture of flux-closure states. We also observed field-driven transitions between the various flux closure states at low fields. There appears to be a distribution of switching field and mode, even for geometrically identical dots. This work demonstrates the novel capability of the SMRM technique and the rich switching physics of magnetic square dots.