Superconductor-Semiconductor Metamaterial Photonic Crystals

We constructed theoretically one-dimensional photonic crystal (1DPC) by using a semiconductor metamaterial in the near-infrared range(NIR) which is composed of Al-doped Z n O(A Z O) and Z n O. The construction of this photonic crystal (PC) is based on a high-temperature superconductor material with the semiconductor metamaterial as constituent layers for this PC. The electromagnetic interactions with this periodic structure are investigated using the transfer matrix method (TMM) in the NIR range. The investigation shows that the reflectance spectra are depending on some parameters of the periodic structure such as the thicknesses of the constituent layers, temperature, and the angle of incidence.     

Optical Activity of Photonic Crystals

Abstract

We consider optically active photonic crystals. We propose a model structure and discuss the factors which determine optical activity by reference to this model.     

Dielectric and Superconducting Photonic Crystals

We present the transmittance of two types of one-dimensional periodic structures. The first type of structure consists of alternating layers of a dielectric material. The second type of structure consists of alternating layers of a dielectric material and a superconductor whose dielectric properties are described by the two-fluid model. The variance of the intensity and the bandwidth of the transmittance are strongly dependent on the thicknesses, temperature, and frequencies. We have compared the transmittance spectra and present some details about the two types of structure. In the first type, we will make a comparison between the optical properties of the high temperature superconducting photonic crystal (HTScPC) by using the YBa₂Cu₃O₇ as a superconductor layer with SrTiO₃ as a dielectric layer. The second type consists of the dielectric photonic crystals (DPCs) and Al₂O₃ or MgO with SrTiO₃ within the ultra-violet region. The comparison obtained according to the difference of the thickness of SrTiO₃ and the variance of the number of periods. The common result is changed in the number of PBGs within the UV range.     

Maximization of Photonic Bandgaps in Two-Dimensional Superconductor Photonic Crystals

In this paper, we investigate the properties of photonic band structures in two-dimensional superconductor photonic crystals (2D-SCPCs) using the frequency dependent plane wave expansion method. We consider two types of 2D-SCPCs, which are composed of superconductor (dielectric) rods embedded into a dielectric (superconductor) background, named type I (type II) SCPCs. We target maximization of the gap-to-mid-gap ratio by varying many parameters, namely, shape of the rods, the operating temperature, the permittivity of the dielectric material, and the threshold frequency of the superconductor. We show that the type II SCPCs have a higher gap-to-mid-gap ratio than the type I SCPCs. In addition, the PBGs can be tuned efficiently by the operating temperature. Moreover, the photonic band structures can be tailored by changing the dielectric constant of the background (rods) in the type I (type II) SCPCs.     

光子晶体的研究进展

阐述了光子晶体理论研究方法。分别对一维、二维、三维光子晶体的研究进展进行介绍,并对光子晶体的应用前景给予了简短的评述。     

Enlarged Photonic Band Gap in Heterostructure of Metallic Photonic and Superconducting Photonic Crystals

We show theoretically that the frequency range of photonic band gap of a hetero-structure which is made of a metallic photonic and superconducting photonic crystal can be enlarged due to the combination of the reflection band properties of the superconductor–dielectric (PC1) and metallic–dielectric (PC2) periodic structures. The transmittance and band structure of the considered structures are calculated using simple transfer matrix method and the Bloch theorem. Beside this, we have also calculated the transmittance of the superconducting photonic structure (PC1), metallic photonic structure (PC2) and heterostructure of metallic photonic and superconductor photonic crystals (PC1/PC2) for TE and TM-mode at the different angles of incidence.     

光子晶体传感器的研究进展

光子晶体是一类具有光子能带和带隙的新型光学材料,近年来已成为传感器技术领域的研究热点。光子晶体微腔、光子晶体波导、光子晶体光纤在传感器领域得到了广泛应用,而凝胶光子晶体、反蛋白石光子晶体、分子印迹光子晶体则实现了化学生物传感器的"裸眼检测技术"。重点分类介绍了一维、二维、三维光子晶体的制备及其在传感器领域的应用进展。     

Silicon‐Based Photonic Crystals

Photonic crystals can be thought of as optical analogues of semiconductors. Here recent advances in photonic crystals based on silicon are reviewed. After summarizing the theory of photonic bandgap materials, the preparation and linear optical properties of 1D, 2D, and 3D silicon‐based photonic crystals are discussed. Laterally structured porous silicon with a defect line is shown in the Figure.     

一维光子晶体的带隙特性研究

一维光子晶体是指介质只在一个方向成周期性排列的材料。利用薄膜光学的特征矩阵法研究了一维光子晶体的禁带特性,分析了填充率变化、厚度的随机扰动对光子带隙的影响。结果表明,随着填充率的变化,各能级的带隙率变化,并且存在一个极大值;厚度的随机扰动对光子带隙也有一定的影响,随机度不同,对光子带隙的影响也不一样。本研究对一维光子晶体的设计与制备有一定的参考价值。     

光子晶体的研究进展

从20世纪80年代末提出光子晶体的概念以来,由于光子晶体独特的调节光子运动状态的特性,使其在许多领域有着广泛的用途.系统叙述了光子晶体的产生、结构、制备和应用,介绍了ZnO光子晶体的最新研究进展.     

光子晶体应用研究进展

光子晶体是一种具有光子带隙的新型材料,其概念提出比较早,距今已经过了30年。由于光子晶体具有很多新颖的特性,使其成为微纳光子学和量子光学的重要研究领域。随着微加工技术的进步和理论的深入研究,光子晶体在信息光学以及多功能传感器等其他多个学科中也得到广泛应用。本文从理论上详细综述了光子晶体的各种奇异特性,并从各种特性出发,详细介绍近年来光子晶体在光子晶体光纤、反射镜、滤波器、波导、低阈值激光器、多功能传感器、腔量子电动力学、偏振器、量子信息处理等领域的应用研究,并与传统的器件进行性能比较得出光子晶体器件具有无可比拟的优势。最后提出,随着3D打印制造技术的成熟,光子晶体材料必然会推动信息技术的新一轮革命。     

CdS、Ag^+掺杂改性纳米TiO_2光催化降解有机物研究

在理论分析的基础上对纳米Ti02分别进行掺CdS和掺银改性实验研究。采用XRD和粒度分析技术对改性后的样品进行表征,并以掺杂CdS、Ag^＋纳米Ti02进行光催化降解甲基橙模拟实验。结果表明,掺杂CdS、Ag^＋纳米Ti02在可见光范围内降解有机物的效率有较大提高。     

Opal Photonic Crystals Modified by Fe-Based Inclusions

Fe-based particles were produced in pores of photonic crystals consisting of amorphous silica nanospheres via infiltration with a ferrocene solution in diethyl ether, followed by pyrolysis. Magnetooptic characterization of the modified material indicated the presence of isotropic, ferromagnetically ordered regions. It is shown that magnetooptic measurements provide a tool for assessing the qualitative composition of opal photonic crystals containing Fe-based inclusions.     

复合结构光子晶体的制备及应用

复合结构纳米粒子具有许多不同于单组分胶体粒子的独特的光、电、磁、催化等物理与化学性质,是构筑光子晶体材料的重要组元.从材料复合的不同形式阐述了复合结构光子晶体的制备方法;列举了光子晶体器件的典型应用.综述了光子晶体的主要用途;并展望了复合结构光子晶体的发展方向.     

Se-SiO2三维光子晶体的制备

报道了一种新的调节二氧化硅光子晶体带隙的方法;通过化学镀向SiO2胶体晶体中填充半导体材料Se,获得了Se-SiO2两种介质复合的三维光子晶体;采用扫描电子显微镜(SEM)、X射线衍射和紫外-可见光谱仪(UV-VIS)等对Se-SiO2三维光子晶体的形貌、结构和光学性能进行了观察测试.研究结果表明,Se以纳米晶粒的形式均匀地包覆在SiO2微球表面,形成了Se壳层,与相同晶格周期的SiO2光子晶体相比,Se-SiO2光子晶体的带隙发生了明显的红移.     

光子晶体的研究进展

从20世纪80年代末提出光子晶体的概念以来,由于光子晶体独特的调节光子运动状态的特性,使其在许多领域有着广泛的用途.系统叙述了光子晶体的产生、结构、制备和应用,介绍了ZnO光子晶体的最新研究进展.     

光子晶体--一种新型人工带隙材料

光子晶体是近十年来才发展起来的存在光子禁带的一种新型人工材料,具有操控光子行为的独特能力,在众多领域有着广泛的用途.介绍了光子晶体的结构特征,分析了光子带隙产生的物理机理,着重介绍了光子晶体材料中存在的新现象及其应用.