High-rate quantum key distribution at short wavelength: Performance analysis and evaluation of silicon single photon avalanche diodes

Abstract

Experimental results obtained with silicon single photon avalanche diodes (SPADs) in quantum key distribution (QKD) at short wavelengths reveal remarkable potential for application in local area networks (LAN) and for free-space transmission at high rate. Actual application prospects, however, depend on the performance level and on the suitability of practical systems using the available silicon SPAD devices. They can be essentially divided in two groups: planar p-n junction structures with a thin depletion layer (typically 1 μm); and reach-through structures with a thick depletion layer (from 20 μm to 150μm). The physical mechanisms that control the device behaviour were investigated and the effect on the key parameters of the detector (quantum detection efficiency, dark counting rate, afterpulsing probability and photon-timing jitter) were thoroughly assessed. A quantitative analysis was made of the influence of such parameters on the quantum bit error rate (QBER). Actual parameters were measured and the attainable performance and system suitability of the two device types evaluated. Comparable performance is obtained, but from a system viewpoint thin SPADs appear inherently better suited to high-rate QKD applications, because of their faster response time, ruggedness, low voltage, low power dissipation and fabrication technology, which is simple, efficient, economical and compatible with monolithic integration of detector and associated circuits.     

Single photon detection of degenerate photon pairs at 1.55 μm from a periodically poled lithium niobate parametric downconverter

Abstract

The performance of a communication system that uses 1.55 μm correlated photon pairs is analysed experimentally in terms of achievable coincidence rates, optimal pump rates, and the performance of custom-built photon-counting detectors at 1.55 μm. The testbed considered in this study uses standard telecom fibre, twin photons, and photon-counting detectors. Degenerate cw time-frequency entangled photon pairs are produced via quasiphase-matched spontaneous parametric downconversion in bulk periodically poled lithium niobate. The photon pairs are efficiently collected into a single-mode fibre and are sent to a pair of custom-built InGaAs photon-counting avalanche photodiodes that are passively quenched, gated in Geiger mode, and thermoelectrically cooled to temperatures as low as - 60°C. Reliable photoncounting operation with a quantum efficiency of 20% at a dark count probability of 0.04% per gate (20 ns) and negligible afterpulses is reported.     

Recent progress on cooled avalanche photodiodes for single photon detection

Abstract

Recent results on the properties of cooled avalanche photodiodes for single photon detection are presented. Results from Hamamatsu silicon photodiodes, originally developed as radiation-hard photodetectors for high energy physics experiments, are extremely encouraging. Gains of approximately 10,000 can be achieved with the APD operating in proportional mode. Together with a low noise amplifier they allow photon counting with extremely high efficiency and very low noise making cold APDs almost ideal single photon detectors. Operation of APDs in Geiger mode is also reported, together with measurements of detection efficiency and noise as function of operating voltage. Prospects and hopes for future work are briefly summarized.     

Single photon counting at telecom wavelength and quantum key distribution

Abstract

A brief overview is given of single photon detector performance requirements for quantum cryptography applications. The analysis is made with respect to restrictions necessary to secure the quantum key distribution channel. InGaAs/InP avalanche photodiode performance is analysed for single photon counting at 1550 nm. Quantum efficiency, dark current and afterpulsing probability (for times up to 100μs after an initial avalanche) are studied in a wider temperature range than previously reported (0deg; C to –80deg;C). We show that photon counting is a bottle-neck in current quantum key distribution systems and provides the source for future performance improvement.     

Photon-number-resolving detection using time-multiplexing

Abstract

Detectors that can resolve photon number are needed in many quantum information technologies. In order to be useful in quantum information processing, such detectors should be simple, easy to use, and be scalable to resolve any number of photons, as the application may require great portability such as in quantum cryptography. Here we describe the construction of a time-multiplexed detector, which uses a pair of standard avalanche photodiodes operated in Geiger mode. The detection technique is analysed theoretically and tested experimentally using a pulsed source of weak coherent light.     

Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes: Current performance

Abstract

InGaAs/InP avalanche photodiodes operated in the so-called Geiger mode currently represent the best solution to detect single-photon beyond 900nm. They cover the 1100–1650nm wavelength interval, which includes in particular the two windows used for optical communications (1310 and 1550nm). A detection efficiency at 1550nm of 10% with a dark count probability of 10^?5 ns^?1 is common, although significant variations can be encountered. At this efficiency, a FWHM temporal response of 300 ps can be achieved. Afterpulses caused by charges trapped by defects in the high field region of the junction constitute the main performance impairment phenomenon. They enhance the dark count probability and reduce out-of-gate detector blindness. These photon counting detectors can be used in optical time-domain reflectometry to improve the spatial resolution and reduce dead-zone effects. Quantum key distribution over metropolitan area networks also constitutes an important application.     

A comparison of avalanche breakdown probabilities in semiconductor materials

Abstract

Using a hard dead space impact ionization model, the dependence of breakdown probabilities on overbias ratio in single photon avalanche diodes is investigated theoretically in a variety of semiconductor materials for the simple case of constant electric field, that is, in a p⁺-i-n⁺ diode structure. By using avalanche widths of 2 μm, the effects of dead space are minimized so that the breakdown probability results are determined primarily by the enabled ionization coefficients of the materials. The results illustrate how the slope of breakdown probability with overbias ratio is affected by the enabled ionization coefficients ratio and by the field dependences of ionization coefficients, which should be taken into account when choosing semiconductor materials for single photon avalanche diodes.     

Detector efficiency limits on quantum improvement

Abstract

Although the National Institute of Standards and Technology has measured the intrinsic quantum efficiency of Si and InGaAs avalanche photo diode (APD) materials to be above 98% by building an efficient compound detector, commercially available devices have efficiencies ranging between 15 and 75%. This means bandwidth, dark current, cost, and other factors are more important than quantum efficiency for existing applications. For non-classical correlated photon applications, the system's correlated signal-to-noise ratio is proportional to (ηN)^½ /(1 ? η)^½, rather than the classical signal-to-noise (ηN)^½. Consequently, the detector design trade space must be re-evaluated. This paper systematically examines the generic detection process, lays out the considerations needed for designing detectors for non-classical applications, and identifies the ultimate physical limits on quantum efficiency.     

A 4π double obelisk of position sensitive PPACs for new vistas in photofission experiments

An arrangement of two-dimensional position sensitive PPACs (parallel plate avalanche counters) covering a large solid angle (> 50% of 4π) for use in a new type of photofission experiments is described. For the first time simultaneous measurements of both the photofission fragment angular and mass distributions are enabled by this device. The mass information is obtained by the double time of flight technique (with modest accuracy) whereas an excellent angular resolution of < 1° is achieved. The detector performances are outlined. First applications in high intensity bremsstrahlung and tagged photon experiments are discussed.     

Recent achievements in single photon detectors and their applications

Abstract

Solid state single photon detectors are receiving more and more attention in a number of areas of applied physics: optical sensors, communications, quantum cryptography, optical ranging and Lidar, time resolved spectroscopy, opaque media imaging and ballistic photon identification. This paper reports on results of research and development in the field of solid state single photon detectors at the Czech Technical University in Prague over the last 20 years. Avalanche photodiodes specifically designed for single photon counting devices have been developed based on various semiconductor materials: Si, Ge, GaP, GaAs and InGaAs. Electronic circuits for biasing, quenching and control of these detectors have been developed and optimized for different applications. The sensitivity of solid state photon counters spans from 0.1 nanometre X-rays up to 1800 nanometres in the near infrared region. Timing resolution of solid state photon counters as high as 50 picoseconds full width at a half maximum has been achieved when detecting single photon signals. Circuits permitting operation of solid state photon counters in both single and multiple photon signal regimes have been developed and applied. The compact and rugged design, radiation resistance, and low operating voltage are attractive features of solid state photon counters in various space projects.     

Photon number resolving in geiger mode avalanche photodiode photon counters

Abstract

The paper reports on research and development in the field of avalanche photodiodes operated as photon counters in a Geiger mode. A technique has been developed and tested that permits estimation of the photon number involved in a detection process. It can be applied in a time correlated photon counting experiment simultaneously with original required time interval estimation. A time walk compensation circuit provides uniform electrical pulses, and the time interval between them is related to the number of photons detected. Employing a picosecond event timing device, the photon number can be estimated within the dynamic range 1–1000 photons with resolution better than a factor of three.     

The working principle of hybrid perovskite gamma-ray photon counter

Gamma-ray spectroscopy that quantifies the gamma-ray energies is a critical technology widely needed in astrophysics, nuclear material detection and medical treatment. The key is to precisely count gamma-ray photons using sensitive detectors. In this paper, we investigate the operational principles of chlorine-doped methylammonium lead tribromide (MAPbBr_3−xCl_x) perovskite single crystal detectors that can efficiently count gamma-ray photon events with electrical pulses. Specifically, we find the main dark current originates from the thermally activated electron injection from the impurities, and using high work function contacts can block out the dark noise thus allows for efficient pulse collection at higher electrical fields ∼500 V/cm. As a result, we observe strong electrical pulses when exposing the detector under radioactive sources emitting gamma-ray photons at various energies. Our results also reveal the fundamental issues that prevent the reliable observation of photo-electric peak. This work suggest pathway towards energy resolved gamma-ray spectroscopy using perovskite crystal detectors.     

Radiometric calibration of single photon detectors by a single photon source based on NV-centers in diamond

A widespread use of various relative calibration techniques is established in order to realize reliable and low uncertainty measurements of the detection efficiency, which is one key parameter characterizing single photon detectors. In the following paper we will present an approach to evaluate the relative detection efficiency of single photon avalanche photo diode (SPAD) detectors compared to a standard detector. This calibration technique is based upon the fiber-coupled relative efficiency calibration of analogue detectors, used in fiber-optic communication. For the first time, to our knowledge, an intrinsic single photon source based on the nitrogen-vacancy center in diamond was used for this purpose. Furthermore, the possible influence of different photon statistics, arising from different irradiation sources like thermal sources or lasers on the calibration results for the fiber exchange method has been theoretically studied.     

Robustness of homodyne tomography to phase-insensitive noise

Abstract

We study the effects of phase-insensitive noise on homodyne measurements of a radiation density matrix. We prove that this noise has an effect equivalent to a non-unit quantum efficiency at detectors. The overall effective quantum efficiency η_? of the measurement is evaluated in terms of the quantum efficiency at detectors and of the average number of noise photons added to the radiation field. For pure Gaussian-displacement noise, we show that half a photon of noise is enough to prevent the homodyne measurement of the density matrix.     

Avalanche semiconductor detector for single optical photons with a time resolution of 60 ps

Single optical photons can be detected by semiconductor diodes, that can operate in the triggered avalance mode. Physical properties and structural requirements of such single photon avalance diodes (SPADs) are analyzed. A simple silicon device which has interesting performances (60 ps resolution in single-photon timing, and low dark count rate (less than 10³ pps at room temperature)) is described. Possible applications are discussed and experimental results are reported (measurements of fast fluorescent decays, and optical time-domain reflectometry in optical fibers with 1 cm resolution). Relations between the device performance and physical phenomena are considered. Criteria are derived for designing and implementing SPAD devices with improved performances. Possible new structures are presented and evaluated.     

High efficiency single photon detection via frequency up-conversion

Abstract

We propose a method of single photon detection of infrared (IR) photons at potentially higher efficiencies and lower noise than allowed by traditional IR band avalanche photodiodes (APDs). By up-converting the photon from the IR, e.g. 1550 nm, to a visible wavelength in a nonlinear crystal, we can utilize the much higher efficiency of silicon APDs at these wavelengths. We have used a periodically poled lithium niobate (PPLN) crystal and a pulsed 1064 nm Nd:YAG laser to perform the up-conversion to a 631 nm photon. We observed conversion efficiencies as high as ～ 80%, and demonstrated scaling down to the single photon level while maintaining a background of 3 ×s; 10^?4 dark counts per count. We also propose a 2-crystal extension of this scheme, whereby orthogonal polarizations may be up-converted coherently, thus enabling complete quantum state transduction of arbitrary states.     

Modeling and monitoring methods for spatial and image data

ABSTRACT

Intelligent sensing and computerized data analysis are inducing a paradigm shift in industrial statistics applied to discrete part manufacturing. Emerging technologies (e.g., additive manufacturing, micro-manufacturing) combined with new inspection solutions (e.g., non-contact systems, X-ray computer tomography) and fast multi-stream high-speed sensors (e.g., videos and images; acoustic, thermic, power and pressure signals) are paving the way for a new generation of industrial big-data requiring novel modeling and monitoring approaches for zero-defect manufacturing. Starting from real industrial problems, some of the main challenges to be faced in relevant industrial sectors are discussed. Viable solutions and future open issues are specifically outlined.     

Lateral Migration Radiography

Abstract

Lateral migration radiography (LMR) is a new form of Compton backscatter imaging (CBI) that utilizes both multiple-scatter and single-scatter photons. The LMR imaging modality uses two pairs of detectors. Each set has a detector that is uncollimated to predominantly image single-scatter photons and the other collimated to image predominantly multiple-scattered photons. This allows generation of two separate images, one containing primarily surface features and the other containing primarily subsurface features. These two images make LMR useful for imaging and identifying objects to a depth of several X-ray photon mean free paths even in the presence of unknown surface clutter or surface imperfections.

The principles of LMR are demonstrated through Monte Carlo simulation of the photon transport. The Monte Carlo simulation results are verified with experimental measurements from an LMR system used for landmine detection. The presented research demonstrates the methodology for designing an LMR system, identifies methods for restoring and enhancing LMR images, and lays the foundation for the development of other applications of LMR, including, for example, the nondestructive examination of welds, castings, and composites.     

Spatial and temporal resolution in entangled ghost imaging

ABSTRACT

We show that, when the integration time of the single photon detectors is longer than the correlation time of the biphoton, the attainable spatial resolution in ghost imaging with entangled signal-idler pairs generated in type II spontaneous parametric down conversion is limited by the angular spread of single-frequency-signal-idler pairs. If, however, the detector integration time is shorter than the biphoton correlation time, the transverse k-vectors of different spectral components combine coherently in the image, improving the spatial resolution.     

Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application

The model explaining an enhanced collected charge in detectors irradiated to 10¹⁵-10¹⁶ n_eq/cm² is developed. This effect was first revealed in heavily irradiated n-on-p detectors operated at high bias voltage ranging from 900 to 1700 V. The model is based on the fundamental effect of carrier avalanche multiplication in the space charge region and in our case is extended with a consideration of p-n junctions with a high concentration of the deep levels. It is shown that the efficient trapping of free carriers from the bulk generation current to the deep levels of radiation induced defects leads to the stabilization of the irradiated detector operation in avalanche multiplication mode due to the reduction of the electric field at the junction. The charge collection efficiency and the detector reverse current dependences on the applied bias have been numerically simulated in this study and they well correlate to the recent experimental results of CERN RD50 collaboration. The developed model of enhanced collected charge predicts a controllable operation of heavily irradiated detectors that is promising for the detector application in the upcoming experiments in a high luminosity collider.