A 12‐bit segmented resistor‐capacitor digital‐to‐analog converter for a display driver IC of a large TFT‐LCD panel system

Abstract— A 12‐bit segmented R‐C DAC to support a linear gamma curve has been proposed and fabricated in a 720‐channel LCD source driver with a 16‐V 1‐poly 3‐metal high‐voltage CMOS process. The proposed DAC has a global resistor string and sample‐and‐hold buffers. A MSB voltage selected by the upper 6 bits of input data and a LSB voltage selected by the lower 6 bits of input data are summed by using a sample‐and‐hold operation with offset cancellation in the proposed DAC. The measured DNL was less than 0.3 LSB, and the output voltage deviation was less than 3 mV in all gray levels. Although two sample‐and‐hold buffers were adopted to operate alternatively, the die size was as small as 24.9 mm², which was only an 8.3% increase compared to that of a conventional 8‐bit 720‐channel source driver. Because of its good performance with small area, the proposed DAC can be a good low‐cost solution for a 10‐bit TV system.     

A 13‐bit universal column driver for various displays of OLED and LCD

A universal column driver is implemented in a 0.13‐µm high‐voltage CMOS process for not only TFT‐LCD but also OLED applications. The proposed column driver employs 13‐bit linear DAC to cover all gamma curves of display applications and address‐based configuration for intra‐ panel interface protocol to support both TV and IT applications. Measured results demonstrate the average voltage of output channels (AVO) is under 1mv, which satisfies 1‐LSB resolution at 18.5V of AVDD.     

Compact and power‐saving polysilicon data driver with common‐decoder DA converter (CD‐DAC)

Abstract— A common‐decoder architecture for a data‐driver circuit fabricated by using a polysilicon process has been developed. The architecture achieves a compact circuit and low‐power consumption. In application to an integrated polysilicon data driver for small‐sized displays, this architecture reduces the area of the data driver by removing the vertical bus lines that occupy a large area. It also suppresses the power consumption of the data bus by reducing the number of driven lines in the data bus during word‐to‐word transitions from six to two. By using a conventional 4‐μm design rule, we fabricated an active‐matrix OLED (AMOLED) panel with an integrated six‐bit data‐driver circuit with 384 outputs. The driver circuit had a height of 2.6 mm and a pitch between output lines of 84 μm. The maximum power consumption of the driver was only 5 mW, i.e., 3.8 mW for logic‐data transfer and 1.2 mW for reference‐voltage source. Furthermore, we also fabricated an active‐matrix LCD (AMLCD) panel including driver circuits of the same type as the integrated elements. Six‐bit full‐color images were successfully displayed on both panels.     

Digital‐to‐analog converter with gamma correction on glass substrate for TFT‐panel applications

Abstract— Low‐temperature polysilicon (LTPS) technology has a tendency towards integrating all circuits on glass substrate. However, the poly‐Si TFTs suffered poor uniformity with large variations in the device characteristics due to a narrow laser process window for producing large‐grained poly‐Si TFTs. The device variation is a serious problem for circuit realization on the LCD panel, so how to design reliable on‐panel circuits is a challenge for system‐on‐panel (SOP) applications. In this work, a 6‐bit R‐string digital‐to‐analog converter (DAC) with gamma correction on glass substrate for TFT‐panel applications is proposed. The proposed circuit, which is composed of a folded R‐string circuit, a segmented digital decoder, and reordering of the decoding circuit, has been designed and fabricated in a 3‐μm LTPS technology. The area of the new proposed DAC circuit is effectively reduced to about one‐sixth compared to that of the conventional circuit for the same LTPS process.     

A third‐generation timing controller and column‐driver architecture using point‐to‐point differential signaling

Abstract— Many assume LCDs will quickly dominate the TV market by simply scaling existing LCD‐monitor panels to wider formats (e.g.,16:9 HDTV) and larger sizes. However, a number of TV requirements push beyond the state‐of‐the‐art monitors of today; response time, brightness, contrast, color envelope, color temperature, and progressive scan‐and‐hold issues require a re‐engineering of the monitor solution. Building upon the strengths of LVDS and RSDS technology solutions in digital video‐data communications, we have created a completely new architecture that fully addresses the needs of TV while supporting existing LCD‐monitor and notebook panels. The Point‐to‐Point Differential Signaling (PPDS?) architecture is more than a data link between the timing controller and the column driver. It is an architecture that supports very large displays with features like multiple windows each with its own gamma, various gamma optimizations, color balance at every gray level, minimal bezel size, a color path greater than 30 bits to the display surface, four‐color mosaics, and numerous other benefits.     

Ultra‐low‐power LTPS TFT‐LCD technology using a multi‐bit pixel memory circuit

Abstract— Two types of low‐temperature poly‐Si TFT LCDs, which integrate a multi‐bit memory circuit and a liquid‐crystal driver within a pixel, have been developed using two different TFT process technologies. Both a 1.3‐in. 116‐ppi LCD having a 2‐bit pixel memory and a 1.5‐in. 130‐ppi LCD having a 5‐bit pixel memory consume very little power, less than 100 μW, which indicates that this technology is promising for mobile displays.     

64‐bit versus 32‐bit Virtual Machines for Java

The Java language is popular because of its platform independence, making it useful in a lot of technologies ranging from embedded devices to high‐performance systems. The platform‐independent property of Java, which is visible at the Java bytecode level, is only made possible thanks to the availability of a Virtual Machine (VM), which needs to be designed specifically for each underlying hardware platform. More specifically, the same Java bytecode should run properly on a 32‐bit or a 64‐bit VM. In this paper, we compare the behavioral characteristics of 32‐bit and 64‐bit VMs using a large set of Java benchmarks. This is done using the Jikes Research VM as well as the IBM JDK 1.4.0 production VM on a PowerPC‐based IBM machine. By running the PowerPC machine in both 32‐bit and 64‐bit mode we are able to compare 32‐bit and 64‐bit VMs. We conclude that the space an object takes in the heap in 64‐bit mode is 39.3% larger on average than in 32‐bit mode. We identify three reasons for this: (i) the larger pointer size, (ii) the increased header and (iii) the increased alignment. The minimally required heap size is 51.1% larger on average in 64‐bit than in 32‐bit mode. From our experimental setup using hardware performance monitors, we observe that 64‐bit computing typically results in a significantly larger number of data cache misses at all levels of the memory hierarchy. In addition, we observe that when a sufficiently large heap is available, the IBM JDK 1.4.0 VM is 1.7% slower on average in 64‐bit mode than in 32‐bit mode. Copyright © 2005 John Wiley & Sons, Ltd.     

A reduced‐voltage differential signaling (RVDS) interface for chip‐on‐glass TFT‐LCD applications

Abstract— Reduced‐voltage differential signaling (RVDS) is a novel interface for TFT‐LCD panels with a chip‐on‐glass (COG) structure, which has a point‐to‐point topology and a voltage mode differential signaling scheme. The voltage‐driving interface scheme has advantages in high‐speed operation owing to its relatively small time constant for the resistive channel condition. And reduced‐voltage signaling can reduce the power consumption of a transmitter. The display source driver IC with an RVDS interface, which is fabricated by using a 0.25‐μm CMOS process with a 2.5‐V logic supply voltage, offers a high data rate up to 500 Mbps, low‐current consumption of 2.2 mA, and good EMI characteristics. Also, an RVDS interface has programmable options that control the bandwidth, system power, and EMI performance. Therefore, the RVDS interface is a competitive solution for low‐power, low‐cost, and slim notebook applications.     

TFT‐LCD driver IC with embedded non‐volatile memory for portable applications

Abstract— To improve the display quality and yield of the TFT‐LCD driver IC, non‐volatile multiple‐time‐programmable (MTP) memory, which consists of an EEPROM cell and our proposed sense amplifier and power control circuit (SP), was integrated into a TFT‐LCD driver IC. The proposed SP has a 30% smaller layout area and a 18% faster response time compared to that of the conventional SP. The proposed SP also has lower power consumption because it does not use a static current. The TFT‐LCD quality was also improved by tuning the characteristics of the driver IC and the panel with the VREF, OSC, and VCOM blocks, using non‐volatile MTP memory. When the display quality improved, the yield also improved, along with a reduction in the failure ratio of the display module, which consists of the driver IC and the panel. As a result, the TFT‐LCD driver IC with the non‐volatile MTP memory demonstrated improved display quality and a higher yield compared to conventional driver ICs without such a memory.     

A 470 × 235‐ppi poly‐Si TFT‐LCD for high‐resolution 2‐D and 3‐D autostereoscopic displays

Abstract— We have developed a 470 × 235‐ppi poly‐Si TFT‐LCD with a novel pixel arrangement, called HDDP (horizontally double‐density pixels), for high‐resolution 2‐D and 3‐D autostereoscopic displays. 3‐D image quality is especially high in a lenticular‐lens‐equipped 3‐D mode because both the horizontal and vertical resolutions are high, and because these resolutions are equal. 3‐D and 2‐D images can be displayed simultaneously in the same picture. In addition, 3‐D images can be displayed anywhere and 2‐D characters can be made to appear at different depths with perfect legibility. No switching of 2‐D/3‐D modes is necessary, and the design's thin and uncomplicated structure makes it especially suitable for mobile terminals.     

A 6.94-in. WVGA poly-Si TFT-LCD with integrated driver including sequential analog sampling circuits

By the integrated drive circuitry with laser crystallization process, the gate and data driver circuits required for full color WVGA(800 × RGB × 480) LCD are integrated on panel. The integrated driver comprises a sequential analog sampling data driver and a dual logic gate scanner for redundancy. The characteristics and uniformities of the LTPS (low temperature polycrystalline silicon) devices have been remarkably enhanced by applying stacked SiO₂ and SiN_x buffer layers and surface treatment.     

Integrated a‐Si TFT row driver circuits for high‐resolution applications

Abstract— A 12.1‐in. tablet liquid‐crystal‐display (LCD) panel with integrated amorphous‐silicon row driver circuits has been developed using a standard TFT process and Advanced Fringe‐Field Switching (AFFS) technology. An XGA‐resolution 768‐stage shift‐register circuit with two‐phase clocks has been designed and fabricated. The circuit parameters were optimized in order to obtain a highly reliable a‐Si row‐driver‐circuit structure. Thermal Humidity Operation (THO) test results at 50°C and 80% humidity during 500 hours of operation shows that the fabricated panel is reliable during long‐term operation and any abnormal display phenomenon was not observed at 0°C.     

Amorphous‐silicon gate‐driver circuits of shared‐node dual pull‐down structure with overlapped output signals

Abstract— A novel gate‐driver circuit using amorphous‐silicon (a‐Si) TFTs has been developed. The circuit has a shared‐node dual pull‐down AC (SDAC) structure with a common‐node controller for two neighboring stages, resulting in a reduced number of TFTs. The overlapped clock signals widen the temperature range for stable operation due to the extended charging time of the inner nodes of the circuit. The accelerated lifetime was found to be over 1000 hours at 60°C with good bias‐temperature‐stress (BTS) characteristics. Accordingly, the a‐Si gate‐driver circuit was successfully integrated into a 14.1‐in. XGA (1024 × RGB × 768) TFT‐LCD panel having a single bank form.     

A small‐area and low‐power data driver IC using two‐stage DAC with a capacitor array for active matrix flat‐panel displays

A small‐area and low‐power data driver integrated circuit (IC) using a two‐stage digital‐to‐analog converter (DAC) with a capacitor array is proposed for active matrix flat‐panel displays. The proposed data driver IC employs a capacitor array in the two‐stage DAC so as to reduce the DAC area and eliminate the need for a resistor string, which has high‐power consumption. To verify the proposed two‐stage DAC, a 20‐channel data driver IC with the proposed 10‐bit two‐stage DAC was fabricated using a 0.18‐μm complementary metal–oxide–semiconductor process with 1.8 and 6 V complementary metal–oxide–semiconductor devices. The proposed 10‐bit two‐stage DAC occupies only 43.8% of the area of a conventional 10‐bit two‐stage DAC. The measurement results show that the differential nonlinearity and integral nonlinearity are +0.58/?0.52 least significant bit and +0.62/?0.59 least significant bit, respectively. The measured interchannel deviation of the voltage outputs is 8.8 mV, and the measured power consumption of the 20‐channel data driver IC is reduced to 7.1 mW, which is less than half of the power consumed by the conventional one.     

High‐reliability gate driver circuit to prevent ripple voltage

In this paper, a high‐reliability gate driver circuit is proposed to prevent multiple outputs. The proposed circuit ensures reliability of the pull‐up thin‐film transistor (TFT) by periodically discharging the Q node voltage to the low‐level voltage (VGL) in the off stage. In addition, the output node is composed of two pull‐down TFTs that are driven alternately to ensure stability against bias stress. Thus, because the reliabilities of the pull‐up and pull‐down TFTs can be guaranteed simultaneously, the stability of the entire circuit is improved. Based on the simulation results, the rising and falling times of the output pulse are stable within 1.77 and 1.28 μs, respectively, even when the threshold voltage of the entire TFT is shifted by +10.0 V. In addition, the ripple voltage of the proposed circuit is almost eliminated and is within 0.79% of the total swing voltage. Moreover, through current is prevented in the proposed circuit because the turn‐on durations of the pull‐up and pull‐down units are completely nonoverlapping, which suggests that unnecessary power consumption can be eliminated. Therefore, based on 2,160 stages, the total power consumption of the proposed circuit is reduced by 34.7 mW from 276.3 to 241.6 mW.     

New approaches to process simplification for large‐area high‐resolution TFT‐LCDs

Abstract— Novel process architectures are proposed for fabricating large‐area high‐resolution TFT‐LCDs with a minimal number of process steps. A low contact resistance between Al bus lines and the transparent conductive oxide layer, necessary for large‐area panels, is obtained by inducing a self‐formed inter‐metallic compound layer at the interface without using any additional buffer or capping layers. For enhanced brightness and resolution, a new TFT array structure integrated on a color‐filter substrate, referred to as an Array on Color Filter (AOC) structure, has been developed. Good‐quality TFTs were successfully constructed on the newly developed color filter for AOC within a sufficiently wide process margin. By adopting these novel technologies, a 15.0‐in. XGA prototype panel was fabricated and shows good display performance. Thus, these novel technologies have improved cost efficiency and productivity for TFT‐LCD manufacturing, and can be applied to the development of TFT‐LCDs of extended display area and enhanced resolution, benefiting from the low resistance bus lines, the high aperture ratio, and reduction in total process steps.     

Current programming pixel circuit and data‐driver design for active‐matrix organic light‐emitting diodes

Abstract— We propose a new pixel design for active‐matrix organic light‐emitting diodes (AMOLEDs) employing five polycrystalline thin‐film transistors (poly‐Si TFTs) and one capacitor, which decreases the data current considerably in order to reduce the charging time compared with that of conventional current‐mirror structures. Also, the new pixel design compensates the threshold‐voltage degradation of OLEDs caused by continuous operation and the non‐uniformity of poly‐Si TFTs due to excimer‐laser annealing. The proposed pixel circuit was verified by SPICE simulation, based on measured TFT and OLED characteristics. We also propose current‐data‐driver circuitry that reduces the number of shift‐register signals for addressing the current data driver by one‐half.     

Design of dual‐outputs‐single‐stage a‐Si:H TFT gate driver for high resolution TFT‐LCD application

A new gate driver has been designed and fabricated by amorphous silicon technology. With utilizing the concept of sharing the noise free block in a single stage for gate driver, dual‐outputs signals could be generated in sequence. By increasing the number of output circuit block in proposed gate driver, number of outputs per stage could also be adding that improves the efficiency for area reduction. Besides, using single driving thin‐film‐transistor (TFT) for charging and discharging, the area of circuit is also decreased by diminishing the size of pulling down TFT. Moreover, the proposed gate driver has been successfully demonstrated in a 5.5‐inch Full HD (1080xRGBx1920) TFT‐liquid‐crystal display panel and passed reliability tests of the supporting foundry.     

In‐cell capacitive‐type touch sensor using LTPS TFT‐LCD technology

Abstract— An LTPS TFT‐LCD with an in‐cell capacitive‐type touch sensor has been proposed and prototyped. The embedded sensor in the pixel was designed to amplify the voltage change caused by capacitive coupling between the detection electrode and conductive object (user's finger). No touch force is needed for sensor actuation and no extra electrical connection for the counter‐substrate is needed. The validity of the observed voltage difference of the sensor output on the TFT substrate was examined. The proposed architecture is considered to be applicable to larger LCDs for various applications such as smartphones, automotive navigation systems, and mobile internet devices.     

Development of a liquid crystal with fine‐pitch light‐source display (LFD) using an organic light‐emitting diode (OLED)

Abstract— A novel display system, refered to as an LFD (liquid crystal with fine‐pitch light‐source display) is proposed. In an LFD, an auxiliary light source patterned with a fine pitch is attached to a reflective liquid‐crystal display (LCD), and a light shield is formed on the observer's side of the light source. A vertical‐alignment LCD (VA‐LCD) is attached as the reflective LCD, and an organic light‐emitting diode (OLED) is attached as the fine‐pitch light source. An LFD can produce bright, high‐contrast images under any ambient light. A test sample was built and its display characteristics confirmed.