Digital‐to‐analog converter with gamma correction on glass substrate for TFT‐panel applications

Abstract— Low‐temperature polysilicon (LTPS) technology has a tendency towards integrating all circuits on glass substrate. However, the poly‐Si TFTs suffered poor uniformity with large variations in the device characteristics due to a narrow laser process window for producing large‐grained poly‐Si TFTs. The device variation is a serious problem for circuit realization on the LCD panel, so how to design reliable on‐panel circuits is a challenge for system‐on‐panel (SOP) applications. In this work, a 6‐bit R‐string digital‐to‐analog converter (DAC) with gamma correction on glass substrate for TFT‐panel applications is proposed. The proposed circuit, which is composed of a folded R‐string circuit, a segmented digital decoder, and reordering of the decoding circuit, has been designed and fabricated in a 3‐μm LTPS technology. The area of the new proposed DAC circuit is effectively reduced to about one‐sixth compared to that of the conventional circuit for the same LTPS process.     

A novel low‐power‐consumption all‐digital system‐on‐glass display with serial interface

Abstract— A new conceptual ultra‐compact LCD panel, which features a simple interface and lower‐power consumption by using low‐temperature polysilicon thin‐film transistor (LTPS‐TFT) technology has been developed. This panel is capable of switching operation modes based on an input command, and all the data are directly communicated with the circuit inside the panel through a Serial Peripheral Interface (SPI) protocol. The integration of the serial‐data‐receiver function on glass substrate has enabled the achievement of a significant reduction in the number of interface pins. Moreover, a low power consumption of 15 μW for a 2.26‐in. reflective LCD panel in combination with the technique of integrating a memory circuit in each pixel has been achieved.     

Digital time‐modulation pixel memory circuit in LTPS technology

Abstract— A digital time‐modulation pixel memory circuit on glass substrate has been designed and verified for a 3‐μm low‐temperature polysilicon (LTPS) technology. From the experimental results, the proposed circuit can generate 4‐bit digital codes and the corresponding inversion data with a time‐modulation technique. While the liquid‐crystal‐display (LCD) panel operates in the still mode, which means the same image is displayed on the panel, a data driver for an LCD panel is not required to provide the image data of the frame by the proposed pixel memory circuit. This pixel memory circuit can store the frame data and generate its corresponding inversion data to refresh a static image without activating the data driver circuit. Therefore, the power consumption of a data driver can be reduced in the LCD panel.     

Low‐power and small‐area holding latch with level‐shifting function using LTPS TFTs for mobile applications

Abstract— A holding latch having a level shifting function fabricated by using a low‐temperature polysilicon (LTPS) process with a 5‐μm design rule on a glass backplane for power and cost effectiveness has been proposed. The layout area and the power consumption of the proposed circuit are reduced by 10% and 52%, respectively, compared with those of a typical structure which combines a static D‐latch and a cross‐coupled level shifter for a 2.2‐in. qVGA TFT‐LCD panel.     

Threshold‐voltage‐compensation methods for AMOLED pixel and analog buffer circuits

Abstract— New pixel‐circuit designs for active‐matrix organic light‐emitting diodes (AMOLEDs) and a new analog buffer circuit for the integrated data‐driver circuit of active‐matrix liquid‐crystal displays (AMLCDs) and AMOLEDs, based on low‐temperature polycrystalline‐silicon thin‐film transistors (LTPS‐TFTs), were proposed and verified by SPICE simulation and measured results. Threshold‐voltage‐compensation pixel circuits consisting of LTPS‐TFTs, an additional control signal line, and a storage capacitor were used to enhance display‐image uniformity. A diode‐connected concept is used to calibrate the threshold‐voltage variation of the driving TFT in an AMOLED pixel circuit. An active load is added and a calibration operation is applied to study the influences on the analog buffer circuit. The proposed circuits are shown to be capable of minimizing the variation from the device characteristics through the simulation and measured results.     

Low‐temperature poly‐Si TFT‐LCD with an integrated analog circuit

We have developed a 6‐bit D/A converter and amplifier integrated low‐temperature poly‐Si TFT‐LCD in which an integrated signal‐line driver is driven by a 5‐V power supply. We have employed a D/A converter including a new capacitor array and an original amplifier comprised of serially connected comparators to achieve high accuracy. The D/A converter performs gamma correction using upper significant bits of input data. Control signals for these circuits were generated by the integrated timing circuit. These advances in integration have been achieved for the first time using 3‐μm design rule and improved LTPS TFT technologies and provide an advanced display system with lower power consumption, smaller module size, and higher durability.     

Latest developments for “system‐on‐glass” displays using low‐temperature poly‐Si TFTs

Abstract— A 2.3‐in.‐diagonal QVGA‐formatted “System‐On‐Glass” display has been developed by using low‐temperature poly‐Si TFT‐LCD technology. This display fully integrates 6‐bit RGB digital interface drivers as well as all the power supply circuitry to drive the LCD, which requires neither external driver ICs nor power‐supply ICs. This paper discusses the newly developed TFT circuit technologies used in this LCD. The development trend of the “System‐On‐Glass” display is also reviewed.     

An in‐cell capacitive touch sensor integrated in an LTPS WSVGA TFT‐LCD

This paper discusses an In‐cell capacitive touch sensor and its integration in an LTPS TFT‐LCD with 7‐inch screen size and WSVGA resolution. The operation of the newly developed sensor is based on capacitive coupling between user's finger and the detection electrode on the TFT substrate, and is purely capacitive. The sensors and the sensor driver circuits have been integrated in the TFT substrate of the prototype TFT‐LCD using LTPS technology. The prototype having 256x150 sensors shows advantages such as smooth operation with no touch force, high position accuracy, multi‐touch (10 or more), a thin and light LCD module, high display quality, and thus is suitable for various applications such as cell‐phones, smart‐phones, mobile‐PCs, and automotive‐use displays.     

Development of rapid thermal processor for large‐glass LTPS production

Abstract— A field‐enhanced rapid‐thermal‐processor (FE‐RTP) system that enables LTPS LCD and AMOLED manufacturers to produce poly‐Si films at low cost, high throughput, and high yield has been developed. The FE‐RTP allows for diverse process options including crystallization, thermal oxidation of gate oxides, and fast pre‐compactions. The process and equipment compatibility with a‐Si TFT manufacturing lines provides a viable solution to produce poly‐Si TFTs using a‐Si TFT lines.     

Development of a 14.1‐in. UXGA TFT‐LCD using LTPS technology

A 14.1‐in. UXGA low‐temperature poly‐Si TFT‐LCD has been developed using p‐MOS technology. Both the peripheral driving circuits and the pixel switches are implemented using only p‐channel TFTs. The device performance for the driving circuits and the panel design issues, such as crosstalk and flicker, were investigated. The image quality required for the notebook‐PC display has been achieved by optimizing the panel design and by improving the device performance. In addition, the redundant gate driving structure has been developed to minimize the degradation of the panel yield.     

Ultra‐low‐power polysilicon AMLCD with full integration

Abstract— An LTPS TFT‐LCD that only consumes 0.07 mW of power was developed. It is the world's first LCD equipped with all the circuits needed to display still images continuously for up to 1 year on a button battery. At the same time, the panel is capable of displaying 260,000‐color moving pictures.     

Low‐temperature poly‐Si TFT data drivers for an SVGA a‐Si TFT‐LCD panel

Low‐temperature poly‐Si TFT data drivers for an SVGA a‐Si TFT‐LCD panel have been developed. The data drivers include shift registers, sample‐and‐hold circuits, and operational amplifiers, and drive LCD panels using a line‐at‐a‐time addressing method. To reduce the power consumption of the shift register, a dot‐clock control circuit has been developed. Using this circuit, the power consumption of the shift register has been reduced to 36% of that of conventional circuits. To cancel the offset voltage generated by the operational amplifier, an offset cancellation circuit for low‐temperature poly‐Si TFTs has been developed. This circuit is also able to avoid any unstable operation of the operational amplifier. Using this circuit, the offset voltage has been reduced to one‐third of the value without using the offset cancellation circuit. These data drivers have been connected to an LCD panel and have realized an SVGA display on a 12.1‐in. a‐Si TFT‐LCD panel.     

Design and implementation of readout circuit on glass substrate with digital correction for touch‐panel applications

Abstract— A readout circuit on glass substrate with digital correction, which contains a transconductance amplifier, counter, and digital correction circuit, has been designed for touch‐panel applications for 3‐μm low‐temperature polysilicon (LTPS) technology. The voltage difference as a result of a change in capacitance due to a touch event is converted to current by a transconductance amplifier. By charging and discharging the capacitor in the counter, the counter displays different digital‐output codes according to touch or non‐touch events. Furthermore, not only can the touch or non‐touch event be distinguished, but also the influence of LTPS process variation can be compensated by a digital correction circuit in the proposed readout circuit.     

Silicon‐nanocrystal‐based photosensor integrated on low‐temperature polysilicon panels

Abstract— A photodetector using a silicon‐nanocrystal layer sandwiched between two electrodes is proposed and demonstrated on a glass substrate fabricated by low‐temperature poly‐silicon (LTPS) technology. Through post excimer‐laser annealing (ELA) of silicon‐rich oxide films, silicon nanocrystals formed between the bottom metal and top indium thin oxide (ITO) layers exhibit good uniformity, reliable optical response, and tunable absorption spectrum. Due to the quantum confinement effect leading to enhanced phonon‐assisted excitation, these silicon nanocrystals, less than 10 nm in diameter, promote electron‐hole‐pair generation in the photo‐sensing region as a result resembling a direct‐gap transition. The desired optical absorption spectrum can be obtained by determining the thickness and silicon concentration of the deposited silicon‐rich oxide films as well as the power of post laser annealing. In addition to obtaining a photosensitivity comparable to that of the p‐i‐n photodiode currently used in LTPS technology, the silicon‐nanocrystal‐based photosensor provides an effective backlight shielding by the bottom electrode made of molybdenum (Mo). Having a higher temperature tolerance for both the dark current and optical responsibility and maximizing the photosensing area in a pixel circuit by adopting a stack structure, this novel photosensor can be a promising candidate for realizing an optical touch function on a LTPS panel.     

FPC‐free LCD panel with capacitive coupling for transmission of signals and power

Abstract— A flexible‐printed‐cable (FPC) free liquid‐crystal‐display (LCD) panel by using a capacitive‐coupling technique has been developed. A QQVGAeight‐color image was successfully displayed for the first time without attaching any signal or power cables to the panel. The receiving circuitry and capacitive‐coupling electrodes were integrated on the LCD panel using a low‐temperature polysilicon (LTPS) fabrication process. In the proposed digital coding method, the receiving circuit converts derivative waveform signals via the capacitive coupling to conventional logic‐level signals. The maximum data rate of 2.4‐Mbps × 3ch (RGB) was achieved. In addition, LTPS low‐capacitance diode bridge and regulator enabled us to obtain stable DC power of 2.4 mW on the panel from the AC‐power signal. This study is the first step towards integrating the wireless‐communication function on the display panel to achieve a high‐value‐added flat‐panel display (FPD).     

High‐performance thin‐film transistor using silicide‐mediated crystallization

Abstract— We studied the silicide‐mediated crystallization of a‐Si for low‐temperature polycrystalline‐silicon (LTPS) on glass. By controling the heating method and Ni density on the a‐Si, the grain size could be increased to 40 μm. Radial grain growth from a NiSi₂ crystalline nucleus gives rise to a large‐grain poly‐Si without amorphous phase inside. A field‐effect mobility of over 200 cm²/V‐sec was achieved by using LTPS.     

Novel write‐erasable input display with memory circuits and photosensors

We have developed a new conceptual liquid crystal display (LCD) with a memory circuit and a photosensor in each pixel to realize excellent handwriting performance. Direct writing and erasing a character in the LCD are available because their direct processing only in the pixel are performed without calculating coordinates by using a light pen and integrated pixel circuits. In addition, this LCD enables to display still image data stored in the pixel memory circuit at a low liquid crystal (LC) driving frequency of 1.0 Hz. In the result, we have achieved faster handwriting response time of 0.5 ms and lower power consumption of 0.7 mW in 7.0‐in. QVGA reflective LCD panel.     

Flexible AMOLEDs with low‐temperature‐processed TFT backplane technologies

Developments of backplane technologies, which are one of the challenging topics, toward the realization of flexible active matrix organic light‐emitting diodes (AMOLEDs) are discussed in this paper. Plastic substrates including polyimide are considered as a good candidate for substrates of flexible AMOLEDs. The fabrication process flows based on plastic substrates are explained. Limited by the temperature that plastic substrates can sustain, TFT technologies with maximum processing temperature below 400 °C must be developed. Considering the stringent requirements of AMOLEDs, both oxide thin‐film transistors (TFTs) and ultra‐low‐temperature poly‐silicon TFTs (U‐LTPS TFTs) are investigated. First, oxide TFTs with representative indium gallium zinc oxide channel layer are fabricated on polyimide substrates. The threshold voltage shifts under bias stress and under bending test are small. Thus, a 4.0‐in. flexible AMOLED is demonstrated with indium gallium zinc oxide TFTs, showing good panel performance and flexibility. Further, the oxide TFTs based on indium tin zinc oxide channel layer with high mobility and good stability are discussed. The mobility can be higher than 20 cm²/Vs, and threshold voltage shifts under both voltage stress and current stress are almost negligible, proving the potential of oxide TFT technology. On the other hand, the U‐LTPS TFTs are also developed. It is confirmed that dehydrogenation and dopant activation can be effectively performed at a temperature within 400 °C. The performance of U‐LTPS TFTs on polyimide is compatible to those of TFTs on glass. Also, the performance of devices on polyimide can be kept intact after devices de‐bonded from glass carrier. Finally, a 4.3‐in. flexible AMOLED is also demonstrated with U‐LTPS TFTs.     

Ultra‐low‐power LTPS TFT‐LCD technology using a multi‐bit pixel memory circuit

Abstract— Two types of low‐temperature poly‐Si TFT LCDs, which integrate a multi‐bit memory circuit and a liquid‐crystal driver within a pixel, have been developed using two different TFT process technologies. Both a 1.3‐in. 116‐ppi LCD having a 2‐bit pixel memory and a 1.5‐in. 130‐ppi LCD having a 5‐bit pixel memory consume very little power, less than 100 μW, which indicates that this technology is promising for mobile displays.     

Current‐mode ambient‐light sensing circuit using p‐type low‐temperature polycrystalline‐silicon TFTs and p‐i‐m diodes

Abstract— A current‐mode ambient‐light sensing circuit, which is composed of p‐intrinsic‐metal (p‐i‐m) diodes and p‐type low‐temperature polycrystalline‐silicon (LTPS) thin‐film transistors (TFTs) for autobrightness control of display panels. The proposed sensing circuit exhibits a wide dynamic range of 56 dB, while the output signal range is 1.8 times wider than that of a previously reported sensing circuit.