MOCVD方法在Si衬底上低温生长ZnO薄膜

采用二乙基锌(DEZn)和氧化亚氮(N2O)作为锌源和氧源,在低温300℃,利用金属有机化学气相沉积(MOCVD)的方法在Si(100)衬底上制备了ZnO薄膜.通过优化氧锌比,ZnO薄膜为高度单一c轴方向生长.由光致发光谱和反射谱得知,ZnO薄膜的紫外发光峰位于388nm,具有很好的光透性,且其PL谱半峰宽为80meV.     

LMBE法生长ZnO薄膜的结构和光学性能

利用激光分子束外延方法(LMBE)在单晶Si(100)和玻璃基片上生长了ZnO薄膜.通过XRD谱、拉曼光谱和光致发光(PL)谱研究了ZnO薄膜的结构和光学性能.结果表明,ZnO薄膜具有六方纤锌矿结构,(002)衍射峰较强,c轴择优取向良好.在可见光范围,ZnO薄膜的平均透射率＞80%,而在紫外范围,平均透射率急剧降低.拟合得到ZnO薄膜的禁带宽度为3.31eV.随激发波长增加,PL谱峰位没有变化,但强度发生了变化.同时,随测量温度升高,紫外发光峰强度减弱,峰位红移,半高宽展宽.理论拟合得到ZnO薄膜的活化能为59meV,接近于ZnO体材料的激子束缚能(60meV),说明紫外发光是由自由激子辐射复合引起的.     

衬底温度对Mg0.1Zn0.9O薄膜结构及光学性能的影响

利用射频磁控溅射技术在不同温度的(100)Si和玻璃衬底上成功地制备了c轴择优取向的Mg0.1Zn0.9O薄膜.通过X射线衍射(XRD)、场发射扫描电镜(FESEM)、紫外可见光分光光度计和光致发光谱研究了衬底温度对Mg0.1Zn0.9O薄膜结构、表面形貌和光学性能的影响,结果表明,在衬底温度为400℃时生长的Mg0.1Zn0.9O薄膜具有很好的c轴取向和较好的光学性能.用激发波长为300nm的氙灯作为激发光源得到不同衬底温度下Mg0.1Zn0.9O薄膜的室温PL谱.分析表明,紫外发光峰与薄膜的结晶质量密切相关,蓝光发射与氧空位有关.简单探讨了衬底温度影响紫外光致发光峰红移和蓝移的可能机理.     

利用LB技术制备发红光聚苯乙烯超薄膜

利用Langmuir-Blodgett(LB)技术,以二次水为亚相,在亚相表面直接铺展掺杂有稀土配合物Eu(TTA)3phen的苯乙烯分子,然后在一定表面压下进行现场聚合,制得了发红光的聚苯乙烯超薄膜,并用红外光谱、紫外-可见光谱、透射电子显微镜、荧光显微镜、光谱型椭圆偏振仪等对薄膜进行了表征。     

MgxZn1-xO单晶薄膜的分子束外延生长及结构表征

用等离子辅助分子束外延(P-MBE)的方法,在蓝宝石c-平面上外延生长了MgxZn1-xO合金薄膜.在0≤x≤0.2范围内MgxZn1-xO薄膜保持着六角纤锌矿结构不变.原位反射式高能电子衍射图样和X射线双晶衍射谱的结果表明生长的样品是单晶薄膜.随着x值逐渐增大,Mg2+离子逐渐进入ZnO的晶格,X射线双晶衍射测得样品的(002)取向的半高宽度从0.249°增加到0.708°,表明结晶质量逐渐下降,(002)方向的X射线衍射峰向大角度方向移动,晶格常数c由5.205(A)减小到5.185(A).透射光谱的结果表明,合金薄膜的吸收边随着Mg离子的掺入逐渐向高能侧移动,室温光致发光谱出现很强的紫外发光(NBE)峰,没有观察到深能级(DL)发射,且随着Mg掺入量的增加,紫外发光峰有明显的蓝移,这与透射光谱的结果是相吻合的.     

TiO_2过渡层对Si基ZnO薄膜光致发光特性的影响

采用直流反应溅射法在Si(100)衬底上制备了有TiO2过渡层的ZnO薄膜,并与直接在Si上生长的样品进行比较。通过X射线衍射技术和光致发光谱等分别对ZnO薄膜的结构和光学性质进行测量和分析。测量结果表明,引入过渡层后ZnO薄膜的平均晶粒尺寸变大,晶粒间界变少,结晶质量提高,薄膜内的应力得到一定程度的释放。此外,室温光致发光谱表明过渡层使ZnO薄膜的紫外发射明显增强,并研究和分析了其微观机理。     

SiC缓冲层用于改善硅基氮化镓薄膜的质量研究

用脉冲激光沉积法在硅衬底上沉积GaN薄膜,为了减小Si衬底与GaN薄膜之间的热失配和晶格失配引入SiC缓冲层.脉冲激光沉积后的GaN薄膜是非晶结构,将样品在氨气氛围中在950℃下退火15min.得到结晶的GaN薄膜.并用X 射线衍射、原子力显微镜、傅立叶红外吸收谱、光致发光谱研究了SiC缓冲层对GaN薄膜的结晶、形貌和光学性质的影响.     

C60/氟金云母复合膜光吸收谱研究

用热壁外延法在氟金云母上生长出了高质量C60薄膜,用原子力显微镜观察了样品的表面形貌,并测量了不同厚度C60薄膜的紫外-可见吸收光谱.由近带隙区的透射及反射光谱,经计算得到了吸收系数与入射光子能量的关系,并利用Tauc公式确定了C60薄膜的光学带隙.     

退火对sol-gel法制备的Zn0.88Co0.12O薄膜结构和磁性的影响

在玻璃衬底上用sol-gel方法制备了具有室温铁磁性的Zn0.88Co0.12O薄膜,X射线衍射(XRD)和紫外可见透射谱(UV-vis)证明Co2 替代Zn2 掺入了ZnO的晶格中.随退火温度的升高,光致发光谱(PL)中紫外发光峰增强,缺陷相关的可见光辐射减弱.用振动样品磁强计(VSM)对其磁性进行了表征.分析表明,薄膜室温铁磁性源于替位的Co离子,而非形成了第二相,其磁性强弱与退火处理制度有关,取决于替位的Co2 和缺陷引起的载流子之间的耦合程度.     

热处理温度对溶胶-凝胶法制备ZnO薄膜晶体结构和发光特性的影响

采用溶胶-凝胶(Sol-Gel)旋涂法在Si(100)衬底上制备ZnO薄膜,利用X射线衍射(XRD)、光致发光谱(PL)、扫描电子显微镜(SEM)等手段分析制得的ZnO薄膜的晶体结构和发光特性。着重考察了热分解温度对ZnO薄膜晶体结构和发光特性的影响。结果表明,溶胶-凝胶旋涂法制备的ZnO薄膜样品厚度约为220nm,属六方纤锌矿结构,其c轴取向度与热分解温度有很大关系;ZnO薄膜在室温下均有较强的紫外带边发射峰,且紫外带边发射峰与样品c轴取向度没有直接关系,与缺陷有关的可见发射带很弱。     

Effect of aging on copper nanoparticles synthesized by pulsed laser ablation in water: structural and optical characterizations

Effect of aging on copper nanoparticles synthesized by pulsed laser ablation of copper plate in water was studied. By characterization studies of the aged nanoparticles, it is found that copper nanoparticles converted into Cu@Cu₂O nanostructure. The synthesized nanomaterial is characterized with UV-Visible absorption, transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) and Raman and photoluminescence (PL) spectroscopic techniques. TEM image shows that the aged nanoparticles get assembled into cactus like structure and are spherical in shape with average diameter 7 nm and dispersion 2 nm. XRD and FTIR spectrum confirm the formation of Cu@Cu₂O in the aged sample. Raman spectrum also confirms the presence of Cu₂O nanoparticles. PL spectrum of the aged nanoparticles shows a direct allowed transition with bandgap energy of 2·24 eV. The mechanism for synthesis of core-shell nanoparticles and formation of self-assembly of nanoparticles is also discussed.     

Growth and characterization of indium phosphide nanowires on transparent conductive ZnO:Al films

The epitaxial growth of indium phosphide nanowires (InP NWs) on transparent conductive aluminum-doped zinc oxide (ZnO:Al) thin films is proposed and demonstrated. ZnO:Al thin films were prepared on quartz substrates by radio frequency magnetron sputtering, then InP NWs were grown on them by plasma enhanced metal organic chemical vapor deposition with gold catalyst. Microstructure and optical properties of InP nanowires on ZnO:Al thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectric spectroscopy (XPS), photoluminescence and Raman spectroscopy at room temperature. SEM shows that randomly oriented and intersecting InP nanowires were grown to form a network on ZnO:Al thin films. Both wurtzite (WZ) and zincblende (ZB) structures coexist in the random orientation InP NWs on ZnO:Al thin film had been proved by XRD analysis. XPS result indicates Zn diffusion exists in the InP NWs on ZnO:Al. The photoluminescence spectra of InP nanowires with Zn diffusion present an emission at 915 nm. Zn diffusion also bring effect on Raman spectra of InP NWs, leading to more Raman-shift and larger relative intensity ratio of TO/LO.     

The effect of Ge implantation dose on the optical properties of Ge nanocrystals in SiO(2)

Ge nanocrystallites (Ge-nc) embedded in a SiO(2) matrix are investigated using Raman spectroscopy, photoluminescence and Fourier transform infrared spectroscopy. The samples were prepared by ion implantation with different implantation doses (0.5, 0.8, 1, 2, 3 and 4) × 10(16)?cm(-2) using 250?keV energy. After implantation, the samples were annealed at 1000?°C in a forming gas atmosphere for 1?h. All samples show a broad Raman spectrum centred at w≈304?cm(-1) with a slight shift depending on the implantation doses. The Raman intensity also depends on the Ge(74+) dose. A maximum photoluminescence intensity is observed for the sample implanted at room temperature with a dose of 2 × 10(16)?cm(-2) at 3.2?eV. Infrared spectroscopy shows that the SiO(2) films moved off stoichiometry due to Ge(74+) ion implantation, and Ge oxides are formed in it. This result is shown as a reduction of GeO(x) at exactly the dose corresponding to the maximum blue-violet PL emission and the largest Raman emission at 304?cm(-1). Finally, the Raman spectra were fitted with a theoretical expression to evaluate the average size, full-width at half-maximum (FWHM) and dispersion of Ge-nc size.     

Structural and optical properties of the Cu2ZnSnSe4 thin films grown by nano-ink coating and selenization

Quaternary semiconductor Cu₂ZnSnSe₄ (CZTSe) is a very promising alternative to semiconductors based on indium (In) and gallium (Ga) as solar absorber material due to its direct band gap, inherent high absorption coefficient (>10⁴ cm^?1) and abundance of cheap elements zinc (Zn) and tin (Sn). In this study, high quality CZTSe thin films were successfully synthesized by a green and low-cost solution based non-vacuum method, which involves spin coating non-toxic solvent-based CZTSe nano-inks onto Mo coated soda lime glass substrates followed by selenization with elemental Se vapor. The effect of selenization temperature on structural, morphological, compositional and optical properties of CZTSe films are investigated using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and photoluminescence spectroscopy. XRD and Raman analysis indicates that a tetragonal stannite-type structured CZTSe is formed. Depend on the selenization temperature, the dense and compact films with grain sizes from 200 nm (500 °C) up to about 1 μm (580 °C) are obtained. EDS measurement indicates that the composition ratios of the prepared CZTSe films are copper-poor and zinc-rich nature. The CZTSe films are p-type conductivity confirmed by a hot point probe method. Photoluminescence spectrum shows slightly asymmetric narrow bands with a maximum of intensity at 0.92 eV. The dependence of the photoluminescence on the excitation temperature reveals a decrease in the intensity of the photoluminescence bands. An absorption coefficient exceeding 10⁴ cm^?1 and the band gap energy about 0.87 eV of the studied films are determined by an absorption spectroscopy.     

Comparative study of multilayered ZnO/TiO<Subscript>2</Subscript>/ZnO and TiO<Subscript>2</Subscript>/ZnO/TiO<Subscript>2</Subscript> thin films prepared by sol–gel dip coating method

The aim of this research work is to represent the comparative study of ZnO/TiO₂/ZnO (ZTZ) and TiO₂/ZnO/TiO₂ (TZT) thin films deposited by sol–gel dip coating on FTO substrates. After deposition, the films were annealed at 500 °C for 1 h. Structural, surface morphology, optical and electrical properties of these films were studied by X-ray diffractrometer (XRD), Raman spectra, atomic force microscope (AFM), photoluminescence spectra (PL) and four point probe technique respectively. XRD and Raman spectra confirmed the anatase, brookite phases of TiO₂ and cubic phase of ZnO. AFM confirmed the formation of nano particles with average sizes of 18.4 and 47.2 nm of TZT and ZTZ films respectively. According to PL spectra, both the multilayer films slowdown the electron hole recombination rate and enhances the optoelectronic properties of the materials. Also it showed the peaks in the visible region of spectrum. The four point probe results showed that the average sheet resistivity of the films is 450 and 120 (ohm-m) respectively.     

Graphene oxide (GO)-doping SnO2 flower-like structure to enhance photocatalytic activity

The GO/SnO₂ micronanostructure was synthesized by a simple and effective hydrothermal method. The combined characterization methods such as Scanning Electron Microscope (SEM), Transmission electron microscope (TEM), X-ray diffraction (XRD), Element mapping, Energy Dispersive X-Ray Spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), the Raman spectroscopy, the Fourier transform infrared spectroscopy (FT-IR), Brunauer-Emmett-Teller (BET), photoluminescence (PL) the Ultraviolet–visible spectroscopy (UV-Vis) and Diffuse reflectance spectrum (DRS) indicated the successful formation of GO/SnO₂ micronanostructure. Moreover, the photocatalytic activity tested with RhB aqueous solution revealed that GO/SnO₂ had excellent photocatalytic properties compared with SnO₂. The photocatalytic efficiency of GO/SnO₂ was much higher (about 2.5 times) than that of pure SnO₂ under visible light irradiation. Based on these test results, we believe that the present work will provide some thoughts for further fabrication of other novel nanostructures and exploration of their applications.     

聚(3-戊酰基)吡咯的合成与光学特性

合成了一种新型酰基取代的聚吡咯衍生物—聚(3-戊酰基)吡咯(PVPy)。通过傅立叶变换红外光谱(FT-IR)、氢核磁共振谱(1H-NMR)、紫外-可见光谱(UV-Vis)、热重分析(TGA)和荧光光谱(PL)等分析手段对聚合物的结构和性能进行了分析。PVPy的TGA谱显示,该聚合物的热分解温度为222℃;通过碘掺杂和浓硫酸(98%)掺杂处理后,PVPy的电导率提高了3个数量级,分别为0.52 S/cm和0.28 S/cm;UV-Vis谱表明;PVPy的光学禁带宽度(Eg)为2.16 eV;PL研究表明,在346 nm的紫外光的激发下,PVPy能够发出很强的波长为423 nm的蓝色荧光。     

溶胶-凝胶法与射频磁控溅射法制备ZnO薄膜及其表征对比

分别对溶胶-凝胶法和磁控溅射法制备ZnO进行了详细的介绍,并借助X射线衍射、原子力显微镜、拉曼光谱分析、紫外吸收等检测手段对这两种方法生长的薄膜进行了分析比较.分析显示:相同石英基底,相同退火温度下生长ZnO薄膜,磁控溅射法生长的ZnO薄膜要比溶胶-凝胶法生长的ZnO薄膜有更优异的c轴取向特性,生长的薄膜结晶更加均匀、致密.     

Mo2C过渡层对金刚石-碳膜场发射均匀性的影响

在经过不同特殊预处理的金属钼衬底上沉积了金刚石 -碳膜 ,分别用X射线衍射谱 (XRD)、拉曼光谱 (Raman)和扫描电子显微镜 (SEM)对样品进行了分析和测试 ,并研究了样品器件的场发射特性。结果发现在金属钼衬底和金刚石 -碳膜之间形成的Mo2 C过渡层与金刚石 -碳膜场发射均匀性有着密切的联系     

Optical properties of NiO thin films fabricated by electron beam evaporation

Nickel oxide (NiO) thin films were deposited onto quartz substrates by the electron beam deposition technique, and obtained high crystal quality after annealing at 1173 K. The structural and microstructural properties of the films were studied by X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. We focus on the optical characterization of the films, indicating the enhancement of the crystal quality, which was confirmed by the photoluminescence and Raman spectrum. Furthermore, PL studies exhibited room temperature emission at 377 nm, and also shown high ultraviolet/visible rejection ratio (>100).