一个8GHz高功率AlGaN/GaN HEMT VCO

基于中科院微电子所的AlGaN/GaN HEMT工艺研制了一个X波段高功率混合集成压控振荡器（VCO）。电路采用源端调谐的负阻型结构,主谐振腔由开路微带和短路微带并联构成,实现高Q值设计。在偏置条件为VD=20V, VG=-1.9V, ID=150mA时,VCO在中心频率8.15 GHz处输出功率达到28 dBm,效率21%,相位噪声-85 dBc/Hz@100 KHz,-128 dBc/Hz@1 MHz。调谐电压0~5V时,调谐范围50 MHz。分析了器件闪烁噪声对GaN HEMT基振荡器相位噪声性能的主导作用。测试结果显示了AlGaN/GaN HEMT工艺在高功率低噪声微波频率源中的应用前景。     

An 8 GHz high power AlGaN/GaN HEMT VCO

A high power X-band hybrid microwave integrated voltage controlled oscillator(VCO) based on Al-GaN /GaN HEMT is presented.The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q factor.The VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -1...     

A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO

A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of -92dBc/Hz at 100-KHz offset, and -120dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms of frequency, output power, and phase noise performance. This work demonstrates the potential for the use of GaN technology for high frequency, high power, and low phase noise frequency sources for military and commercial applications.     

Power efficient Ka-band low phase noise VCO in 0.13 μm CMOS

A 27 GHz cross-coupled LC voltage controlled oscillator (VCO) using a standard 0.13 mum CMOS technology is presented. The VCO using a high-Q LC resonator with a micro-strip inductor (mu-strip L) provides a phase noise of -113 dBc/Hz at a 1 MHz offset frequency. The figure - of-merit (FoM) is -194.6 dBc/Hz. To obtain high output power, it also uses a common source amplifier as a buffer and it shows the output power of -3.5 dBm at an oscillation frequency of 26.89 GHz. This is believed to be the lowest phase noise and FoM with the highest output power of a millimetre-wave VCO in CMOS technology.     

A 108-GHz InP-HBT monolithic push-push VCO with low phase noise andwide tuning bandwidth

This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported. The W-band VCO is based on a push-push oscillator topology, which employs InP HBT technology with peak f_T's and f_max's of 75 and 200 GHz, respectively. The W-band VCO produces a maximum oscillating frequency of 108 GHz and delivers an output power of +0.92 dBm into 50 Ω. The VCO also obtains a tuning bandwidth of 2.73 GHz or 2.6% using a monolithic varactor. A phase noise of -88 dBc/Hz and -109 dBc/Hz is achieved at 1- and 10-MHz offsets, respectively, and is believed to be the lowest phase noise reported for a monolithic W-band VCO. The push-push VCO design approach demonstrated in this work enables higher VCO frequency operation, lower noise performance, and smaller size, which is attractive for millimeter-wave frequency source applications     

新型复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT低相位噪声微波单片集成压控振荡器

设计并研制了一种新型复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT(CC-HEMT)微波单片集成压控振荡器(VCO),且测试了电路的性能.CC-HEMT的栅长为1μm,栅宽为100μm.叉指金属-半导体-金属(MSM)变容二极管被设计用于调谐VCO频率.为提高螺旋电感的Q值,聚酰亚胺介质被插入在电感金属层与外延在蓝宝石上GaN层之间.当CC-HEMT的直流偏置为Vgs=-3V,Vds=6V,变容二极管的调谐电压从5.5V到8.5V时,VCO的频率变化从7.04GHz到7.29GHz,平均输出功率为10dBm,平均功率附加效率为10.4%.当加在变容二极管上电压为6.7V时,测得的相位噪声为-86.25dBc/Hz(在频偏100KHz时)和-108dB/Hz(在频偏1MHz时),这个结果也是整个调谐范围的平均值.据我们所知,这个相位噪声测试结果是文献报道中基于GaN HEMT单片VCO的最好结果.     

A fully integrated V-band PLL MMIC using 0.15-/spl mu/m GaAs pHEMT technology

A fully integrated V-band phase-locked loop (PLL) MMIC with good phase noise and low-power consumption is developed using 0.15-/spl mu/m GaAs pHEMTs. For V-band frequency division,a wideband divide-by-3 frequency divider is proposed using cascode FET-based harmonic injection locking. The fourth subharmonic mixer using anti-parallel diode pair is employed as a high-frequency phase detector. In this way, the required frequency of the reference oscillator is lowered to one twelfth of V-band output signal. An RC low-pass filter and DC amplifier are also integrated to effectively suppress the spurious and harmonic signals, and to increase the loop gain. To reduce the circuit interactions and frequency pulling effect, buffer amplifiers are used at the output of VCO and frequency divider. The fabricated V-band PLL MMIC shows the locking range of 840 MHz around 60.1GHz under a very low power dissipation of 370 mW. Good phase noise of -95.5 dBc/Hz is measured at 100 kHz offset. The chip size is as small as 2.35/spl times/1.80 mm/sup 2/. To the best of our knowledge, the PLL MMIC of this work is one of the highest frequency monolithic PLLs that integrates all the required elements on a single chip.     

80-GHz differential VCO in InP SHBTs

A high frequency millimeter-wave voltage-controlled oscillator (VCO) has been designed, manufactured and tested in InP single heterojunction bipolar transistor technology. The fully integrated fundamental differential VCO features high operating frequency up to 80 GHz with low phase noise about -118 dBc/Hz at 1-MHz offset and 5% tuning range. The VCO consumes only 95-mW power at a power supply of -5 V, while providing -2 dBm single-ended output power and 1 dBm for differential output power. The die size is 0.28 mm/sup 2/.     

Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz

A fundamental low phase noise W-band VCO extended by an output buffer using InP/InGaAs DHBT technology is reported. The fully integrated differential VCO exhibits operation frequencies ranging from 83 to 89 GHz. At 87 GHz, a minimum phase noise of -102 dBc/Hz at 1 MHz offset frequency has been achieved. Within the tuning range, a single ended output power up to 5 dBm was measured, resulting in a total signal power of 8 dBm.     

A Low Phase-Noise X-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

A low phase-noise X-band monolithic-microwave integrated-circuit voltage-controlled oscillator (VCO) based on a novel high-linearity and low-noise composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95 N/GaN high electron mobility transistor (HEMT) is presented. The HEMT has a 1 mumtimes100 mum gate. A planar inter-digitated metal-semiconductor-metal varactor is used to tune the VCO's frequency. The polyimide dielectric layer is inserted between a metal and GaN buffer to improve the Q factor of spiral inductors. The VCO exhibits a frequency tuning range from 9.11 to 9.55 GHz with the varactor's voltage from 4 to 6 V, an average output power of 3.3 dBm, and an average efficiency of 7% at a gate bias of -3 V and a drain bias of 5 V. The measured phase noise is -82 dBc/Hz and -110 dBc/Hz at offsets of 100 kHz and 1 MHz at a varactor's voltage (V_tune)=5 V. The phase noise is the lowest reported thus far in VCOs made of GaN-based HEMTs. In addition, the VCO also exhibits the minimum second harmonic suppression of 47 dBc. The chip size is 1.2times1.05 mm²     

具有自校准压控振荡器和精确自动频率校准算法的低噪声频率合成器

A low noise phase locked loop （PLL） frequency synthesizer implemented in 65 nm CMOS technology is introduced. A VCO noise reduction method suited for short channel design is proposed to minimize PLL output phase noise. A self-calibrated voltage controlled oscillator is proposed in cooperation with the automatic frequency calibration circuit, whose accurate binary search algorithm helps reduce the VCO tuning curve coverage, which reduces the VCO noise contribution at PLL output phase noise. A low noise, charge pump is also introduced to extend the tuning voltage range of the proposed VCO, which further reduces its phase noise contribution. The frequency synthesizer generates 9.75-11.5 GHz high frequency wide band local oscillator （LO） carriers. Tested 11.5 GHz LO bears a phase noise of-104 dBc/Hz at 1 MHz frequency offset. The total power dissipation of the proposed frequency synthesizer is 48 mW. The area of the proposed frequency synthesizer is 0.3 mm^2, including bias circuits and buffers.     

SiGe bipolar transceiver circuits operating at 60 GHz

A low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-controlled oscillators have been implemented in a 0.12-/spl mu/m, 200-GHz f/sub T/290-GHz f/sub MAX/ SiGe bipolar technology for operation at 60 GHz. At 61.5 GHz, the two-stage LNA achieves 4.5-dB NF, 15-dB gain, consuming 6 mA from 1.8 V. This is the first known demonstration of a silicon LNA at V-band. The downconverter consists of a preamplifier, I/Q double-balanced mixers, a frequency tripler, and a quadrature generator, and is again the first known demonstration of silicon active mixers at V-band. At 60 GHz, the downconverter gain is 18.6 dB and the NF is 13.3 dB, and the circuit consumes 55 mA from 2.7 V, while the output buffers consume an additional 52 mA. The balanced class-AB PA provides 10.8-dB gain, +11.2-dBm 1-dB compression point, 4.3% maximum PAE, and 16-dBm saturated output power. Finally, fully differential Colpitts VCOs have been implemented at 22 and 67 GHz. The 67-GHz VCO has a phase noise better than -98 dBc/Hz at 1-MHz offset, and provides a 3.1% tuning range for 8-mA current consumption from a 3-V supply.     

A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT

A 6 GHz voltage controlled oscillator (VCO) optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance (Neg-R) method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of -122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz.     

一种Ku波段宽调谐范围高输出功率的InGaP/GaAs HBT VCO

本文介绍了一种采用InGaP/GaAs HBT工艺实现的全集成应用于Ku波段的压控振荡器(VCO)。该VCO采用Colpitts结构,以达到宽调谐范围,并且该VCO取得了较高的输出射频功率。测试结果表明：该VCO的振荡频率为12.82 GHz～14.97 GHz,调谐范围为15.47%,输出射频功率为0.31 dBm～6.46 dBm,在载频13.9 GHz处相位噪声为-94.9 dBc/Hz@1 MHz。在5 V单电源直流偏置下该VCO的功耗为52.75 mW,其芯片尺寸为0.81 mm×0.78 mm。最后,本文对VCO的品质因数FOM指标进行了讨论。     

60GHz宽调谐范围推—推压控振荡器设计

基于65nmCMOS工艺实现了60GHz推—推压控振荡器（VCO）设计。采用互补交叉耦合去尾电流源结构以降低相位噪声。压控振荡器输出包含两级缓冲放大器,第二级缓冲放大器偏置在截止区附近以增大二次谐波的输出功率。在1.2/0.8V电源电压下,压控振荡器核心和缓冲放大器分别消耗2.43mW和2.95mW。在偏离中心频率1MHz处相位噪声为-90.7dBc/Hz。输出功率为-2.92dBm。特别的,压控振荡器的调谐范围达到9.2GHz（15.3%）,与调谐范围相关的性能指标FOMT为-182.7dBc/Hz。该压控振荡器可应用于57GHz～64GHz开放频段超高速短距离无线通信。     

A compact and low-phase-noise Ka-band pHEMT-based VCO

A low phase-noise Ka-band monolithic voltage-controlled oscillator (VCO) designed using the negative resistance concept is reported. A circuit fabricated using the three-dimensional monolithic microwave integrated circuit technology exhibits a high integration level; its size is a record at just 0.5 mm/sup 2/. On-wafer measurements demonstrate a low phase noise of -102 dBc/Hz at a 1-MHz offset. The VCO delivers an output power of 11.8 dBm at the center frequency of 28.3 GHz. The frequency tuning range is more than 3.8 GHz. Dependence of the circuit performance on the bias conditions is also reported and suggests that an optimum phase-noise characteristic can be achieved when biasing the transistor to optimize its transconductance and noise figure.     

A K-band InGaP/GaAs HBT balanced MMIC VCO

A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84/spl times/1.00 mm/sup 2/.     

Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz

It is demonstrated that SiGe bipolar technologies are well suited for voltage-controlled oscillators (VCOs) in 77-GHz automotive radar systems. For this, the design of a VCO with powerful output buffer (with good decoupling capability and high output power), comparatively wide tuning range, and reasonably low phase noise is described. To achieve the required high output power, the potential operating range of the output transistors, limited by high-current effects and avalanche breakdown, respectively, had to be exploited using adequate transistor models. The VCOs need a single supply voltage only and have been fully integrated (including resonant circuit and output buffer) on a single small (1 mm/sup 2/) chip, demonstrating their low-cost potential. Experimental results showed, at a center frequency of around 77 GHz, a usable tuning range of 6.7 GHz and a phase noise of -97 dBc/Hz at 1-MHz offset frequency averaged over this range. In addition, the center oscillation frequency can be coarsely adjusted within a wide range by cutting links in the upper metallization layer. The total signal power delivered by both buffer outputs together is as high as 18.5 dBm at a power consumption of 1.2 W. Simulations let us expect a potential doubling of the output power (for two or four outputs) by extension of the output buffer. To get an impression of the maximum frequency achievable with the circuit concept and technology used, a second VCO (again with buffered output) has been developed. To the best of the authors' knowledge, the measured maximum oscillation frequency of about 100 GHz, at 12.4-dBm total output power (14.3 dBm at 99 GHz), is a record value for SiGe VCOs with buffered output operating at their fundamental frequency. The usable tuning range is still 6.2 GHz.     

A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology

A balanced Colpitts voltage-controlled oscillator (VCO) is designed and fabricated in a commercially available 0.25-/spl mu/m SiGe BiCMOS process. It has the characteristics of the push-push VCO, i.e., the VCO has simultaneously a differential output at a fundamental frequency of 21.5 GHz and a single-ended output at the second harmonic frequency of 43 GHz. A differential tuning technique is applied to reduce the phase noise. The measured phase noise at 1-MHz offset is -113 dBc/Hz at 21.5 GHz and -107 dBc/Hz at 43 GHz. The corresponding output power is about -6 and -17 dBm, respectively, with a 5% tuning range and a 130-mW dc power consumption.     

InGaP/GaAs HBT单管6GHz 大功率低噪声压控振荡器

A 6 GHz voltage controlled oscillator （VCO） optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance （Neg-R） method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of-122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz.