Swift iodine ion modification of the structural and magnetotransport properties of Fe/Cr systems

Fe/Cr/Fe trilayers and (Fe/Cr)₂₀ multilayers prepared under ultrahigh vacuum conditions by thermal evaporation were irradiated with 200 MeV I¹³⁺ ions in the fluence range between 1 × 10¹¹ and 8 × 10¹² I/cm². The structural properties of the Fe/Cr/Fe trilayers and (Fe/Cr)₂₀ multilayers were measured by X-ray reflectivity (XRR) and conversion electron Mössbauer spectroscopy (CEMS). Magnetic exchange coupling between the Fe layers through the Cr spacer layer was observed by SQUID magnetization measurements. Magnetoresistance effect was measured using four probe method at room temperature. The XRR spectra showed an increase of the interface roughness versus increasing irradiation fluence in the multilayers, while in the trilayers smoothening of the interfaces in the sample irradiated with fluence equal to 4 × 10¹¹ I/cm² and very slight change for other fluences were observed. Improving of the interface structure in the trilayers at this fluence was observed also by CEMS. Moreover the Mössbauer spectra also confirm roughening of the interfaces as a function of fluence for multilayers. Before irradiation an antiferromagnetic coupling fraction dominated in all samples. After irradiation the changes of magnetic coupling were different in both types of samples. The trilayers were less sensitive to the irradiation fluence than multilayers and an increase of the antiferromagnetic fraction at small fluences was observed. In the multilayers a continuous decrease of the antiferromagnetic fraction as a function of fluence was evidenced. Vanishing of the antiferromagnetic coupling, observed for the largest fluence, resulted in the decrease of magnetoresistance effect in the Fe/Cr multilayers.     

Ion beam induced desorption from thin films: SiO2 single layers and SiO2/Si multilayers

The occurrence of O₂ molecular loss from the bulk of SiO₂ single layers and SiO₂/Si multilayers as a result of 50 MeV Cu⁹⁺ irradiation has been investigated. This process did not take place with a significant rate, if it occurs at all. Instead both Si and O are removed from the SiO₂ surface region, releasing molecular O₂. If an elemental Si layer is on top in a multilayer, removal of Si and O with an appreciable rate is not observed. The irradiation creates bubbles in the SiO₂/Si multilayers, which contain O₂. The distinct SiO₂ sublayers remain chemically intact. The bubbles deteriorate the depth resolution in elastic recoil detection.     

Effect of Si and Zr on the interdiffusion of U-Mo alloy and Al

We investigated the effect of Zr additions to U-Mo and Si additions to Al on interdiffusion between U-Mo and Al by employing diffusion couple tests. We examined the phase stability of the γ-heat-treated alloys by high-temperature annealing tests. Using X-ray diffraction, we observed that the γ-phase U-7Mo-Zr alloys with more than 2 wt% Zr decomposed faster than the U-7Mo alloys. The diffusion couples showed that a Zr addition to U-7Mo and the addition of Si in Al reduced the interaction layer growth rates. However, Zr additions to U-Mo are most effective in reducing the overall interdiffusion rates when combined with Si additions to Al. The decomposition of the metastable U-Mo γ-phase during the diffusion test appears to have a significant effect on the overall interdiffusion rates.     

Development of Wide Band Neutron Monochromator Consisting of a Stack of Multilayers

A wide band neutron monochromator consisting of a stack of four multilayers on two Si wafers has been developed. One multilayer has 201 Ni/Ti layers. The layer thickness is gradually changed in order to extend the neutron reflection wavelength range similar to a supermirror. Multilayers were fabricated by the vacuum evaporation methods on each side of a Si substrate of 225 μm in thickness. Neutron reflectivity was measured by the θ-2θ reflectometer using cold neutrons. The neutron reflection wavelength was broadened to 19–40 nm by this stack from 26–40 nm of one multilayer.     

北京同步辐射软X射线偏振测量装置及其应用

在北京同步辐射装置(BSRF)设计建造了-套基于多层膜偏振元件的软X射线偏振测量分析装置,可工作在双反、双透、前反后透和前透后反四种工作模式,既可作为偏振测量装置,用于同步辐射光束线和多层膜偏振元件偏振特性测量,也可作为通用反射率计,用于多层膜和薄膜的反射或透射率测量,又可用于磁性材料的磁光效应研究等.利用自行研制的装置和光学元件对BSRF的3W1B光束线的偏振特性进行了系统的测量.测量结果指出,在206 eV时,输出光的线偏振度从起偏前的O.585上升到起偏后的0.995,同步光的线偏振度得到极大改善.利用非周期宽带Mo/Si多层膜开展了铁磁性材料的磁光法拉第效应测量,获得了Ni薄膜3p边附近(60-70 eV)的法拉第旋转角度,最大偏转角度在65.5 eV和68 eV分别为1.85±0.19°和-0.75±0.09°.     

CEMS AND COUPLING EFFECT OF INTERLAYERS IN MULTILAYERED FeSi/Si AMORPHOUS FILMS

Multilayered FeSi/Si amorphous films with fixed FeSi layer thickness and different Si layer thicknesses have been studied by conversion electron Mossbauer spectroscopy at room temperature. The results showed that with decreasing the Si layer thickness, the hyperfine field of samples increased and the thickness of interface dead layers arisen from the atomic interdiffusion effect decreased. These are due to the coupling effect between the magnetic layers. When the Si layers are thinner than 0.88 nm, the direction of the magnetization is out of the film plane.     

Characterization of the interaction layer grown by interdiffusion between U-7wt%Mo and Al A356 alloy at 550 and 340 °C

U(Mo) alloys are under study to get a low-enriched U fuel for research and test reactors. Qualification experiments of dispersion fuel elements have shown that the interaction layer between the U(Mo) particles and the Al matrix behaves unsatisfactorily. The addition of Si to Al seems to be a good solution. The goal of this work is to identify the phases constituting the interaction layer for out-of-pile interdiffusion couples U(Mo)/Al(Si). Samples γU-7wt%Mo/Al A356 alloy (7.1 wt%Si) made by Friction Stir Welding were annealed at 550 and 340 °C. Results from metallography, microanalysis and X-ray diffraction, indicate that the interaction layer at 550 °C is formed by the phases U(Al,Si)₃, U₃Si₅ and Al₂₀Mo₂ U, while at 340 °C it is formed by U(Al,Si)₃ and U₃Si₅. X-ray diffraction with synchrotron radiation showed that the Si-rich phase, previously reported in the interaction layer at 550 °C near U(Mo) alloy, is U₃Si₅.     

RBS investigations of buffer layers between YBa2Cu3O7−x and silicon

The deposition of high-quality high-T_c superconducting films on silicon wafers for future hybrid electronic devices is strongly hampered by the interdiffusion between films and substrate. This effect degrades the superconducting properties seriously and is a strong function of temperature. Since high processing temperatures are inevitable for good films, suitable buffer layers are needed to reduce the interdiffusion. We have investigated the combinations ZrO₂/Si(100), BaF₂/Si(100), and noble-metal/TiN/Si(100) at temperatures up to 780°C in oxidizing ambient. YBa₂Cu₃O_7−x films have been deposited onto the buffer layers by laser ablation. Thereafter the interfaces have been analyzed by Rutherford backscattering. So far only ZrO₂ has demonstrated sufficient stability to serve as a buffer layer for the laser-ablated YBa₂Cu₃O_7−x films. All other combinations suffer from interdiffusion or oxidation.     

Metal/amorphous silicon multilayer radiation detectors

A multilayer structure is described for use in a number of radiation detectors. The structure consists of alternating layers of metal and amorphous silicon (a-Si). The absorption of radiation mainly occurs in the metal layers, while electron-hole pairs are generated in the a-Si layers by the emitted secondary particles from the metal layers. The fundamental applicability of this novel detector for X-ray detection was confirmed by Monte Carlo computer simulations as well as by results for an experimental five-layer Ta(0.5 μm)/a-Si(3 μm)/Mo(0.5 μm) X-ray sensor fabricated on a 1.5-cm×4-cm glass plate. The authors have confirmed that the detector has rectifying characteristics, with the Mo and Ta layers forming Schottky barrier and ohmic contacts respectively     

Nuclear resonant reflectivity with standing waves for the investigation of a thin Fe layer buried inside a superconducting Si/[Mo/Si]45/Fe/Nb multilayer

A special multilayer sample Si/[Mo/Si]₄₅/⁵⁷Fe/Nb has been prepared for the depth selective investigations of the hyperfine fields in thin iron layer at low temperatures above and below the superconducting transition in the top Nb layer (T_c ∼ 8 K) by means of the nuclear resonant reflectivity with standing waves. The periodic multilayer [Mo/Si]₄₅ below the iron layer in our sample was used as “a standing wave generator”. A weak magnetic hyperfine splitting in the ⁵⁷Fe layer was detected just at low temperature. A slight variation of the nuclear resonant reflectivity time spectra measured above and below T_c was observed. At first it was supposed that this change of the spectrum shape is caused by the spatial modulation of ferromagnetic domains in the ⁵⁷Fe layer caused by a proximity effect. A closer analysis, however, reveals that the spectrum variations are due to just the changes of the relative weights of the magnetic and paramagnetic phases in ⁵⁷Fe layer.     

Microstructural characterization of U-7Mo/Al-Si alloy matrix dispersion fuel plates fabricated at 500 °C

The starting microstructure of a dispersion fuel plate will impact the overall performance of the plate during irradiation. To improve the understanding of the as-fabricated microstructures of U-Mo dispersion fuel plates, particularly the interaction layers that can form between the fuel particles and the matrix, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses have been performed on samples from depleted U-7Mo (U-7Mo) dispersion fuel plates with either Al-2 wt.% Si(Al-2Si) or AA4043 alloy matrix. It was observed that in the thick interaction layers, U(Al, Si)3 and U6Mo4Al43 were present, and in the thin interaction layers, (U, Mo) (Al, Si)3, U(Al, Si)4, U3Si3Al2, U3Si5, and possibly USi-type phases were observed. The U3Si3Al2 phase contained some Mo. Based on the results of this investigation, the time that a dispersion fuel plate is exposed to a relatively high temperature during fabrication will impact the nature of the interaction layers around the fuel particles. Uniformly thin, Si-rich layers will develop around the U-7Mo particles for shorter exposure times, and thicker, Si-depleted layers will develop for the longer exposure times.     

Ti-Mo互扩散界面吸氢同位素效应的离子束分析研究

为探究Ti-Mo互扩散对金属吸氢的影响,本文采用离子束分析方法对Ti-Mo薄膜的膜-基互扩散界面的吸氢同位素（H和D）效应进行了研究。通过氩离子刻蚀减薄的方法有效降低了表面碳、氧杂质对样品吸氢的影响。吸氢结果表明,对于表面洁净的样品,氢化后固相中氢或氘的浓度均沿着深度随钼原子含量的增加而减小。在单一气体吸氢实验中,氢原子浓度减小的趋势较氘原子缓慢;而在氢氘混合气体吸氢实验中,当容器中的氢氘压强比p(H2)∶p(D2)≥05∶1时,固体中氘氢浓度之比随钼浓度的增加而降低,但当p(H2)∶p(D2)<05∶1时,氘氢浓度之比随钼浓度的增加而升高。因此,由于Ti Mo界面的互扩散,吸氢出现了显著的氢同位素效应,钼的存在不利于体系对氢同位素气体的吸收。     

Schwarzschild microscopes in vacuum ultraviolet and soft X-ray regions

Microscopes in vacuum ultraviolet and soft X-ray regions using a normal incidence type of Schwarzschild objective are reviewed. The objective consists of a concave mirror and a convex mirror coated with a high reflectance multilayer, having a large numerical aperture comparing with other objectives. The microscopes have been used to diagnose inertia-confinement-fusion plasmas, and to investigate small samples or microstructures of inorganic and organic materials by imaging them using laboratory light sources. Synchrotron radiation has been also used to obtain a microbeam for a photoelectron scanning microscope with a spatial resolution of 0.1 μm. The structure and performance of two laboratory microscopes developed at Tohoku University are demonstrated. One of them is a soft X-ray emission imaging microscope, An image of an artificial pattern made of W and SiO2 on Si wafer by focusing Si L emission was presented, The other is an ultraviolet photoelectron scanning microscope using a He (helium) gas discharge lamp. The valence band spectra of a microcrystal of FeWO4 were presented, Furthermore other applications such as demagnifying optics for lithography and optics to gather fluorescence for emission spectroscopy are introduced.     

Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti－Si system

Annealing behavior,at different annealing temperatures,of an ultrathin Mo layer located between a Ti film and Si substrate or deposited on the top of surface of a Ti film was investigated by Rutherford backscattering spectrometry(RBS), cross-sectional transmission electron microscopy(TEM) and energy dispersive X-ray spectrometry(EDS),In a Ti/Mo/Si structure,partially reacted film with layer structure of Ti-rich silicide/TiSi2/(Mo,Ti) Si2 on a Si substrate was formed after 550℃ annealing for 30min.The ratio of Mo to Ti in(Mo,Ti)Si2 layer decreases from near Si substrate upwards and becomes zero at about 20nm away.In a Mo/Ti/Si structure, The surface Mo layer enhances the Si diffusion from the substrate during annealing.Mo bearing Ti rich silicide exists on the surface until 600℃ and then converts to (Mo,Ti )Si2 after 650℃ annealing,and the atomic ratio of Mo to Ti decreases from the top surface into Ti silicide film,and becomes zero at about 30nm away from the surface.In both cases of interface Mo and surface Mo layer,thd atomic ratio of Mo to Ti in the region of (Mo,Ti)Si2 was found to be very low,with an average value of less than 0.2.Low content of Mo in Mo containing ternary silicide leads easily to the formation of the stable phase of C54(Mo,Ti)Si2,which acts as a template for the formation of C54 TiSi2 beneath when Mo is deposited on the surface.     

Wear mechanism and microstructures of Mo-implanted 4Cr5MoV1Si steel

tance and microstructure of implanted specimen were1 Introduction discussed according to the results of RBS, GXRD and The influence of pulsed beam in ion implantation XPS.is a topic of interest in both ion beam modification 2 Experimentaland radiation effect research.[1-3] Currently, a majorapplication of ion implantation is to improve the cor- Square steel samples (0.36wt.%…     

脉冲X射线衍射法测量冲击加载下的晶格形变量

脉冲X射线衍射可实现冲击加载下材料晶格形变量的在线测量。在建立晶格形变量的脉冲X射线衍射测量模型的基础上,分析了撞击倾斜及晶体宏观位移对衍射测量结果的影响。确定了影响晶格形变量测量的晶体样品宏观位移及衍射峰读出等因素的不确定度来源,建立了各种因素综合影响下的不确定度分析方法。给出了轻气炮驱动的平面冲击加载实验中LiF(100)晶体的脉冲X射线衍射测量结果,实验获得了晶体处于3.65 GPa和2.33 GPa两个不同冲击压缩状态下的动态衍射峰。经计算得到的晶格形变量与材料宏观雨贡纽关系吻合,并从晶格层面上证实了LiF晶体在冲击塑性形变时晶格处于各向同性的压缩状态。     

Plasma nitridation of thin SiO2 films: AES, ELS and IR study

Auger electron spectroscopy, low-energy electron loss spectroscopy and infrared spectroscopy are used to investigate the nitridation of thin (10–22 nm) thermal SiO₂ in RF soft NH₃ plasma. It is found that plasma action at a substrate temperature of 573 K can completely nitridate the thermal oxide to an oxynitride layer. The layers obtained are macroscopic mixtures of two phases SiO₂ and Si₃N₄, rather than amorphous polymers of Si, O and N.     

8.0 nm X射线激光反射镜Mo/B4C多层膜制备及其特性

The Mo/B₄C multilayer at wavelength of 8.0 nm is fabricated by magnetron sputtering. The microstructure of multilayer are tested using X-ray diffraction and TEM,and the results show that Mo/B₄C multilayer have high structural quality and thermal stability.     

单晶硅表面钝化层在低能电子辐照前后的SIMS和XPS分析

为了研究低能电子辐照对单晶硅器件表面钝化材料中产生的化学微结构的变化,在轻掺杂P型单晶硅基底上制作了三种表面钝化膜,分别是单一SiO₂钝化膜、SiO₂/Si₃N₄复合钝化膜、硼硅玻璃/Si₃N₄复合钝化膜,开展了表面钝化单晶硅在最大能量70 keV的加速器电子束下的辐照实验。样品在空气气氛下辐照6 h,用二次离子质谱(SIMS)测试了辐照前后三种表面钝化膜中Si、N、B的纵深变化,同时用Ar离子刻蚀X射线表面光电子能谱(XPS)对Si元素的化学结合状态进行测试分析。结果表明:对单一SiO₂钝化的轻掺杂P型材料,辐照在SiO₂/Si界面产生明显的材料结构变化,界面附近的SiO₂不再是完整化学计量比,而是SiO_x(x<2);对SiO₂/Si₃N₄复合钝化的轻掺杂P型材料,辐照对SiO₂     

X-ray reflectivity investigation of near-surface density changes induced in Al–Au multilayers by high-current ion beam bombardment

Alternating Al–Au multilayers (typical thickness of each layer 150 nm) were deposited on polished glassy carbon substrates by evaporation under high-vacuum conditions at 278 K and subsequently interdiffused with high-current 2.0 MeV ⁴He⁺ ions. After ion beam bombardment, non-destructive X-ray reflectometry measurements reveal a significant decrease of the density in the near-surface region from 19 to 12 g/cm³. This change in density is caused by the Al–Au interdiffusion during ion beam bombardment, as measured with RBS and X-ray diffraction. Based on the advantage of X-ray reflectometry of no specific sample preparation, detailed integral information of the surface roughness is achieved, additionally. For example, the surface roughness of the interdiffused Al–Au layers increases from 3.1 to 4.1 nm accompanied by the appearance of a gradient layer at the surface that even increases in thickness after irradiation. In addition, the density of this gradient layer decreased from the as-deposited to the irradiated state.