MBE生长的PM－HEMT结构中深电子陷阱及其钝化／消除

应用ＤＬＴＳ、ＳＩＭＳ和ＰＬ技术详细研究ＭＢＥ生长的ＰＭ－ＨＥＭＴ结构中深能级．样品的ＤＬＴＳ谱表明在ＰＭ－ＨＥＭＴ结构的ｎ－ＡｌＧａＡｓ层里存在着较大浓度和俘获截面的深电子陷阱，其能级位置分别位于导带下的０．６４ｅＶ和０．７９ｅＶ处．ＳＩＭＳ和ＰＬ谱表明深电子陷阱与ＡｌＧａＡｓ层里的氧含量和光致发光（ＰＬ）响应有直接的联系．它们影响ＰＭ－ＨＥＭＴ结构的电性能．应用氢等离子体对深电子陷阱进行处理，结果表明，在一定条件下，ＰＭ－ＨＥＭＴ结构样品里的深电子陷阱能有效地被钝化／消除．     

MBE生长的PM—HEMT结构中深电子陷阱及其钝化／消除

应用ＤＬＴＳ、ＳＩＭＳ和ＰＬ技术详细研究ＭＢＥ生长的ＰＭ－ＨＥＭＴ结构中深能级。样品的ＤＬＴＳ谱表明在ＰＭ－ＨＥＭＴ结构的ｎ－ＡｌＧａＡｓ层里存在着较大浓度和俘获截面的深电子陷阱，其能级位置分别位于导带下的０．６４ｅＶ和０．７９ｅＶ处。ＳＩＭＳ和ＰＬ谱表明深电子陷阱与ＡＬＧａＡｓ层时原氧含量和光致发光（ＰＬ）响应有直接的联系，它们影响ＰＭ－ＨＥＭＴ结构的电性能，应用氢等离子体对深电子陷阱进行处理，     

GeSi／Si应变结构内应力纵向分布

利用深能级瞬态谱（ＤＬＴＳ）研究分子束外延ｎ－Ｇｅ０．２Ｓｉ０．８／Ｓｉ应变超晶格，观察到两个与位错有关的深中心，其中一个能级位置在ＥＣ＝０．４２ｅＶ，另一个随着偏压变化而发生明显的移动，深能级位置从ＥＣ＝０．２１ｅＶ变化到ＥＣ＝０．２７６ｅＶ，我们认为是内应力引起的．取该深能级的流体静压力系数γ＝６．５９ｍｅＶ／Ｋｂａ，求出超晶格中的应力分布与计算值符合较好．在此基础上提出了一种通过测量深能级随应力移动效应来确定应变结构内应力纵向分布的新方法．     

Ge_(0.4)Si_(0.6)/Si多量子阱与Ge/Si短周期超晶格样品中的深中心

用深能级瞬态谱（ＤＬＴＳ）研究了分子束外延生长的Ｇｅ０．４Ｓｉ０．６／Ｓｉ多量子阱与Ｇｅ／Ｓｉ应变超晶格样品中深能级中心的性质．在两种样品中都观测到两个多数载流子中心和一个少数载流子中心．在Ｇｅ０．４Ｓｉ０．６／Ｓｉ多量子阱样品中深中心Ｅ２的能级位置为ＥＣ－０．３０ｅＶ,Ｅ３的能级位置为ＥＣ－０．２２ｅＶ．并且在正向注入下随着Ｅ２峰的消失观测到一个少数载流子峰ＳＨ１,其能级位置为ＥＶ＋０．６８ｅＶ．在Ｇｅ／Ｓｉ应变超晶格中,深中心Ｈ１的能级位置为ＥＶ＋０．４４ｅＶ,深中心Ｈ２的能级位置为ＥＶ＋０．２４ｅＶ     

In0.53Ga0.47As／InP异质结光电二极管的深能级

采用深能级瞬态谱仪（ＤＬＴＳ）测定了Ｉｎ０．５３Ｇａ０．４７Ａｓ／ＩｎＰ异质结光电二极管的ＤＬＴＳ谱。发现存在一电子陷阱，该陷阱能级位于导带底以下０．４４ｅＶ处，能级密度为３．１０×１０１３ｃｍ－３，电子俘获截面为１．７２×１０－１２ｃｍ－２。由于深能级的存在，导致了该器件存在一种新的“暗电流”──“深能级协助隧穿电流”。     

InP衬底上的p－沟和n－沟异质结绝缘栅场效应晶体管

在ＩｎＰ衬底上用通常的晶格匹配（ｙ＝０．５３）和晶格失配（ｙ＞０．５３）Ｉｎ＿（０．５３）Ａｌ＿０．４８Ａｓ／Ｉｎ＿ｙＧａ＿（１－ｙ）Ａｓ层结构同时制作ｐ－沟和ｎ－沟曾强型异质结绝缘栅场效应晶体管（ＨＩＧＦＥＴ）。获得１μｍ栅长ｅ型ｐ－沟ＨＩＧＦＥＴ，其阈值电压约０．６６Ｖ，夹断尖锐，栅二极管开启电压０．９Ｖ，室温时非本征跨导＞２０ｍＳ／ｍｍ。相邻的（互补的）ｎ－小沟ＨＩＧＦＥＴ也显示ｅ型工作（阈值Ｖ＿ｔｈ＝０．１６Ｖ），低的漏电，０．９Ｖ栅开启电压和高跨导（ｇｍ＞３２０ｍＳ／ｍｍ）。这是首次报道在ＩｎＰ衬底上同时制作具有适合作互补电路特性的ｐ＿和ｎ－沟ＨＩＧＦＥＴ。     

InP衬底上的p—沟和n—沟异质结绝缘栅场效应晶体管

在ＩｎＰ衬底上用通常用晶格匹配（ｙ＝０．５３）和晶格失配（ｙ〉０．５３）Ｉｎ０．５３Ａｌ０．４６Ａｓ／ＩｎｙＧａ（１－ｙ）Ａｓ层结构同时制作ｐ－沟和ｎ－沟增强型异质结绝缘栅场效应晶体管（ＨＩＧＦＥＴ）。获得１μｍ栅长ｅ型ｐ－沟ＨＩＧＦＥＴ，其阈值电压约０．６６Ｖ，夹断尖锐，栅二极管开启电压０．９Ｖ，室温时非本征跨导〉２０ｍＳ／ｍｍ。相邻的（互补的）ｎ－沟ＨＩＧＦＥＴ也显示ｅ型工作（阈值Ｖｔｈ＝０．     

热载流子应力感应n-MOSFETsGIDL特性退化的机理

对不同栅氧化物ｎ－ＭＯＳＦＥＴｓ的ＧＩＤＬ（Ｇａｔｅ－ＩｎｄｕｃｅｄＤｒａｉｎＬｅａｋａｇｅ）特性在不同热载流子应力下的退化行为进行了研究．发现ＧＩＤＬ的漂移对栅电压十分敏感,在ＶＧ＝０．５ＶＤ的应力条件下呈现最大．通过对漏极附近二维电场及载流子分布的模拟,引入“亚界面陷阱”概念,对所涉及的机理提出了新见解,认为：在应力期间,亚界面和体氧化物空穴陷阱的解陷分别相应于ＶＧ＝０．５ＶＤ和ＶＧ＝ＶＤ两种典型应力下ＧＩＤＬ的漂移．实验还观察到Ｎ２Ｏ氮化,特别是Ｎ２Ｏ退火ＮＨ３氮化的ｎ－ＭＯＳＦＥＴｓ比常规热氧化ｎ     

Ge0.4Si0.6／Si多量子阱与Ｇe／Si周期超晶格样品中的深中心

用深能级瞬态谱（ＤＬＴＳ）研究了分子束外延生长的Ｇｅ０．４Ｓｉ０．６／Ｓｉ多量子阱与Ｇｅ／Ｓｉ为超晶格样品中深能级中心的性质,在种样品中都观测到两个多数载流子中心和一个少数载流子中心,在Ｇｅ０．４Ｓｉ０．６／Ｓｉ多量子阱样品深中心Ｅ２的能级位置为ＥＣ－０．３０ｅＶ,Ｅ３的能级位置为Ｅｃ－０．２２ｅＶ,并且在正向注入下随着Ｅ２峰的消失到一个少数载流子峰ＳＨ１,其能级位置为ＥＶ＋０．６８ｅＶ,在Ｇｅ／     

P—InPMIS结构界面陷阱的深能级研究

对经ＰＥＣＶＤ生长的Ｐ－ＩｎＰＭＩＳ结构的界面陷阱进行了研究。样品介质模生长是在特定条件下进行的，分别利用Ｃ－Ｖ和ＤＬＴＳ技术进行研究。结果表明，结果表明，在介质膜和ＩｎＰ之间的ＩｎＰ之间的ＩｎＰ－侧有界面陷阱存在，并获得了与之有关的深能级参数。这些陷阱可能是不同生长条件的介质膜淀积过程中等离体引进的有关辐照损伤。     

开路p－n结对近邻光电二极管特性的影响

对ｐ－ｎ结邻近有大面积受光开路ｐ－ｎ结的光电特性进行了理论和实验分析。结果表明，这种结构不能改善光敏器件的灵敏度和探测率，而且由于大面积受光开路ｐ－ｎ结的存在，器件的灵敏度和探测率比相同面的单个ｐ－ｎ结小。     

开路p－n结对近邻光电二极管特性的影响

对ｐ－ｎ结邻近有大面积受光开路ｐ－ｎ结的光电特性进行了理论和实验分析。结果表明，这种结构不能改善光敏器件的灵敏度和探测率，而且由于大面积受光开路ｐ－ｎ结的存在，器件的灵敏度和探测率比相同面的单个ｐ－ｎ结小。     

内调制光电探测器与GCMPD灵敏度的比较

通过严格的对比实验发现，内调制光电探测器的灵敏度比ＧＣＭＰＤ的高很多。文中还指出了ＧＣＭＰＤ理论的基本错误和实验的欠妥之处。     

根据行为级模型方法对CMOS 图像传感器的BJPG 晶体管的分析

本文提出一种新的用于CMOS图像传感器像素的光电检测器－－双极结型光栅晶体管。由于引入p^ n注入结，光电荷的读出速率大大增加，改善了CMOS图像传感器的工作速率和响应灵敏度。尽管传统的光电集成电路的电路级模拟采用微电子集成电路的模拟方法，但是光电子集成电路不仅含有微电子器件和电信号还含有光电检测器和光信号，采用传统的集成电路模拟方法有其局限性。本文提出一种行为级模拟方法（光电子检测器设计的新方法，利用C、MATLAB和HSPICE等语言写出光电子器件的模拟器）来模拟分析双极结型光栅晶体管的特性。基于0.6μm CMOS工艺的分析结果表明双极结型光栅晶体管在不同栅氧化层厚度随栅压变化与传统光栅晶体管的特性一样，但光电流密度呈指数式增长且光电流密度增大，因此改善了CMOS图像传感器的工作速率和响应灵敏度。     

Theory of open circuit voltage decay in a p-n junction diode at high injection

A high injection theory of open circuit voltage decay in a p-n junction diode is given. The theory takes into account the saturation of junction voltage at high injections and coupling between emitter and base of the diode. The results are in qualitative agreement with the available experimental results. In particular the theory explains the plateau which has been observed in most experimental results on the open circuit voltage decay at high injections.     

Simulation of double junction In0.46Ga0.54N/Si tandem solar cell

A comprehensive study of high efficiency In_0.46Ga_0.54N/Si tandem solar cell is presented. A tunnel junction (TJ) was needed to interconnect the top and bottom sub-cells. Two TJ designs, integrated within this tandem: GaAs(n⁺)/GaAs(p⁺) and In_0.5Ga_0.5N(n⁺)/Si(p⁺) were considered. Simulations of GaAs(n⁺)/GaAs(p⁺) and In_0.5Ga_0.5N (n⁺)/Si(p⁺) TJ I-V characteristics were studied for integration into the proposed tandem solar cell. A comparison of the simulated solar cell I-V characteristics under 1 sun AM1.5 spectrum was discussed in terms of short circuit current density (J_sc), open circuit voltage (V_OC), fill factor (FF) and efficiency (η) for both tunnel junction designs. Using GaAs(n⁺)/GaAs(p⁺) tunnel junction, the obtained values of J_sc = 21.74 mA/cm², V_OC= 1.81 V, FF = 0.87 and η = 34.28%, whereas the solar cell with the In_0.5Ga_0.5N/Si tunnel junction reported values of J_sc = 21.92 mA/cm², V_OC = 1.81 V, FF = 0.88 and η = 35.01%. The results found that required thicknesses for GaAs(n⁺)/GaAs(p⁺) and In_0.5Ga_0.5N (n⁺)/Si(p⁺) tunnel junctions are around 20 nm, the total thickness of the top InGaN can be very small due to its high optical absorption coefficient and the use of a relatively thick bottom cell is necessary to increase the conversion efficiency.     

Calculation of the harmonic components of the voltage in hybrid circuits utilising tunnel diodes and transistors

This letter deals with the harmonic composition of the oscillating circuit voltage in hybrid circuits utilising tunnel diodes and transistors. It is shown that the nonlinearity of the p?n junction capacitance of tunnel diodes and transistors increases the higher-voltage harmonics. When the p?n junction is well defined, the value of the second harmonic, which only occurs because of the nonlinearity of the p?n junction capacitance, may be 12?15% of the first harmonic's amplitude. Comparison between theoretical and experimental results is given.     

n‐GaAs/InGaP/p‐GaAs Core‐Multishell Nanowire Diodes for Efficient Light‐to‐Current Conversion

Heterostructure n‐GaAs/InGaP/p‐GaAs core‐multishell nanowire diodes are synthesized by metal‐organic vapor‐phase epitaxy. This structure allows a reproducible, selective wet etching of the individual shells and therefore a simplified contacting of single nanowire p‐i‐n junctions. Nanowire diodes show leakage currents in a low pA range and at a high rectification ratio of 3500 (at ±1V). Pronounced electroluminescence at 1.4 eV is measured at room temperature and gives evidence of the device quality. Photocurrent generation is demonstrated at the complete area of the nanowire p‐i‐n junction by scanning photocurrent microscopy. A solar‐conversion efficiency of 4.7%, an open‐circuit voltage of 0.5 V and a fill factor of 52% are obtained under AM 1.5G conditions. These results will guide the development of nanowire‐based photonic and photovoltaic devices.     

Open circuit voltage decay in p-n junction diodes at high levels of injection

The open circuit voltage decay (OCVD) in p-n junction diodes at high levels of injection is discussed in this paper. Theoretical results are given for thick base diodes and for BSF solar cells including the effect of recombination in the emitter. It is found that the recombination in the emitter becomes important at high levels of injection and makes the voltage decay faster. The experimental results in BSF solar cells at high levels of injection are also reported and found to be in good agreement with the theoretical results derived in this paper.     

Controllable Switching between Highly Rectifying Schottky and p–n Junctions in an Ionic MoS2 Device

Semiconductor junctions are of great significance for the development of electronic and optoelectronic devices. Here, controllable switching is demonstrated from a Schottky junction to a p–n junction in a partially ionic liquid-gated MoS₂ device with two types of metal contacts. Excellent rectification behavior with a current on-off ratio exceeding 10⁶ is achieved in both Schottky and p–n junction modes. The formation of Schottky junction at the Pd electrode/MoS₂ contact and p–n junction at the p-MoS₂/n-MoS₂ interface is revealed by spatially resolved photocurrent mappings. The switching between the two junctions under ionic gate modulation is correlated with the evolution of the energy band, further validated by the finite element simulation. The device exhibits excellent photodetection properties in the p–n junction mode, including an open circuit voltage up to 0.84 V, a responsivity of 0.24 A W⁻¹, a specific detectivity of 1.7 × 10¹¹ Jones, a response time of hundreds of microseconds and a linear dynamic range of up to 91 dB. The electric field control of such high-performance Schottky and p–n junctions opens up fresh perspectives for studying the behavior of junction and the development of 2D electronic devices.