High-Quality$hboxAl_2hboxO_3/hboxPr_2hboxO_3/hboxAl_2hboxO_3$MIM Capacitors for RF Applications

The electrical characteristics of layered$hboxAl_2hboxO_3/hboxPr_2hboxO_3/hboxAl_2hboxO_3$metal–insulator–metal (MIM) capacitors for RF device applications are presented for the first time. This advanced dielectric layer system 4-nm$hboxAl_2hboxO_3/hbox8-nm hboxPr_2hboxO_3/hbox4-nm hboxAl_2hboxO_3$shows a high capacitance density of 5.7$hboxfF/muhboxm^2$, a low leakage current density of$hbox5 times hbox10^-9 hboxA/hboxcm^2$at 1 V, and an excellent dielectric loss behavior over the studied frequency range.     

High-Performance Metal–Insulator–Metal Capacitors Using Amorphous BaSm2Ti4O12 Thin Film

The dielectric properties of the amorphous BaSm₂Ti₄O₁₂ (BSmT) film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300 degC exhibited a high capacitance density of 9.9 fF/mum² at 100 kHz and a low leakage current density of 1.790 nA/cm² at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V² and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/degC at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor     

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

In this letter, ultrathin gadolinium oxide$(hboxGd_2hboxO_3)$high-$k$gate dielectrics with complementary-metal-oxide-semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a$hboxGd_2hboxO_3$thickness of 3.1 nm yield a capacitance equivalent oxide thickness of$ CET = hbox0.86 hboxnm$. The extracted dielectric constant is$k = hbox13-hbox14$. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.     

RFIC TaN/SrTiO$_3/$TaN MIM Capacitors With 35fF$/muhboxm^2$Capacitance Density

A very high density of 35$hboxfF/muhboxm^2$is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-$kappa (kappa=hbox169)$$hboxSrTiO_3$fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100kHz to 10GHz, low leakage current of 1$times hbox10^-7 hboxA/cm^2$at 1V are simultaneously measured. The small voltage dependence of a capacitance$Delta C/C$of 637ppm is also obtained at 2GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.     

音响分频器使用的有机薄膜电容器

音响分频器中使用的有机薄膜电容器 ,其阻抗和损耗频率特性的优劣直接影响分频器的阻抗及功率特性 ,从而影响音响的质量。在选用电容器时 ,应注意 :1选用无感式卷绕的金属化有机薄膜电容器 ,使 LESL趋于零 ;2选用边缘加厚的金属化有机薄膜电容器 ,降低极板电阻、接触电阻和接触损耗 ,改善电容器的阻抗和损耗频率特性 ,满足分频器的阻抗匹配和功率匹配的要求 ;3首选粗短结构的电容器 ;4选用圆形结构电容器 ,避免连续性自愈发生。正确选择优质电容器 ,满足良好的听觉效果。     

Frequency Effect on Voltage Linearity of $ hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors

This letter deals with the electrical and wideband frequency characterizations of metal–insulator–metal capacitors integrating medium-$kappa$ material, $hbox{ZrO}_{2}$. In particular, this letter focuses on the frequency effect on the voltage linearity of these capacitors and material. The dependence of the voltage–capacitance coefficient (VCC) $alpha$ is, for the first time, studied from 1 kHz to 1 GHz. Intrinsic or extrinsic material origin of the VCC are discussed.      

Efficient 2-$mu$m Continuous-Wave Laser Oscillation of Tm$^3 + $:KLu(WO$_4$)$_2$

Monoclinic crystals of Tm-doped KLu(WO₄)₂ were grown with high crystalline quality for several dopant concentrations. The relevant spectroscopic properties for the ³ F₄rarr³H₆ laser transition (cross sections, lifetime) were measured at room temperature. Laser oscillation in the 2-mum range was obtained both with Ti:sapphire and diode laser pumping near 800 nm using different setups. The maximum output powers achieved were 1.4 and 4 W, respectively, and the corresponding slope efficiencies with respect to the absorbed power were 60% and 69%, respectively. The novel monoclinic double tungstate thulium host KLu(WO₄)₂ was directly compared to KGd(WO₄)₂ and exhibited superior performance. The two laser polarization configurations for Tm:KLu(WO₄)₂ ,E//N_m and E//N_p, were also compared under identical conditions with pumping by the polarized Ti:sapphire laser. Tuning was studied for both of them using an intracavity Lyot filter and the tuning range achieved was from 1800 to 1987 nm. In the case of no polarization selective cavity elements the diode-pumped Tm:KLu(WO₄ )₂ laser naturally selected the E//N_m polarization     

The optimization of metal—Insulator—Metal nonlinear devices for use in multiplexed liquid crystal displays

This paper describes the steps taken in the optimization of metal-insulator-metal (MIM) nonlinear devices for use in multiplexed liquid crystal displays. Circuit modeling and computer simulations were used to establish the capacitance and current versus voltage characteristics of the ideal MIM. By controlling processing parameters such as nitrogen doping and anodization voltage, device characteristics can be brought into the optimum range.     

金属/SiO2/Si基Bi4Ti3O12铁电薄膜的J-V特性

采用sol-gel方法在Pt/Ti/SiO2/Si衬底上制备了Bi4Ti3O12铁电薄膜。测试了其在直流电场下流过铁电薄膜的漏导电流J-V特性。测量结果显示正向漏电流明显小于负向漏电流。并讨论了金属–铁电薄膜所形成的整流接触特性,以及金属/SiO2/Si基Bi4Ti3O12铁电薄膜系统在不同电压范围(0~±6V)的导电机制。     

A Thin-Film Filter-Based 1$, times,$2 Reconfigurable Fiber-Optic Add–Drop Module With a Quadruple Fiber-Optic Collimator

Due to a limited optical crosstalk in most thin-film filter (TF)-based fiber-optic modules, we propose and experimentally verify a low optical crosstalk TF-based 1$, times,$2 reconfigurable fiber-optic add–drop structure. Our key idea is to employ a passive noise rejection scheme by introducing a double reflection on the TF as well as a spatial separation through a combination of a quadruple and a single fiber-optic collimators. Our experimental results show a much improved$≪ - $39.1-dB optical crosstalk at the Thru port. In addition, the measured average optical losses at the Drop and the Thru ports are 1.40 and 1.23 dB, respectively, when the TF is in the optical path. When the mirror is in the optical path, all wavelength optical beams are directed to the Thru port with a measured average 2.50-dB optical loss. A low polarization-dependent loss of$≪$0.17 dB is also determined. Furthermore, our design concept can be used to form a low optical crosstalk fixed three-port add–drop filter and a high dynamic-range wavelength-sensitive variable fiber-optic attenuator.     

氧化膜强化技术在钽电容器生产中的应用

采用氧化膜强化技术在钽阳极体外表面形成抗机械应力的强化氧化膜,并模拟钽电容器回流焊过程,研究回流焊前后钽电容器漏电流变化以及对击穿电压(BDV)的影响。试验结果显示:在回流焊安装前后,应用氧化膜强化技术的电容器漏电流增幅小于普通产品14%;耐BDV比普通产品高6 V。     

$hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $hbox{ZrO}_{2}$ for DRAM Applications

We provide the first report of the structural and electrical properties of $hbox{TiN/ZrO}_{2}$/Ti/Al metal–insulator–metal capacitor structures, where the $hbox{ZrO}_{2}$ thin film (7–8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance–voltage ($C$– $V$) and current–voltage ( $I$–$V$) characteristics are reported for premetallization rapid thermal annealing (RTP) in $hbox{N}_{2}$ for 60 s at 400 $^{circ}hbox{C}$, 500 $^{circ}hbox{C}$, or 600 $^{ circ}hbox{C}$. For the RTP at 400 $^{circ}hbox{C}$ , we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of $sim$ 0.9 nm at a gate voltage of 0 V. The dielectric constant of $ hbox{ZrO}_{2}$ is 31 $pm$ 2 after RTP treatment at 400 $^{circ}hbox{C}$.      

高温有机电容器的设计

简要介绍了干式高温有机电容器材料和结构的选择要点,阐述了制造高温电容器关键工艺的原理和方法,分析了聚酯(PET)、聚丙烯(PP)、聚碳酸酯(PC)、聚苯硫醚(PPS)介质耐高温电容器的电性能     

Improved Stress Reliability of Analog Metal–Insulator–Metal Capacitors Using $hbox{TiO}_{2}/hbox{ZrO}_{2}$ Dielectrics

We have studied the stress reliability of high-$kappa$ $hbox{Ni/TiO}_{2}/hbox{ZrO}_{2}/hbox{TiN}$ metal–insulator–metal capacitors under constant-voltage stress. The increasing $hbox{TiO}_{2}$ thickness on $hbox{ZrO}_{2}$ improves the 125-$^{circ}hbox{C}$ leakage current, capacitance variation $(Delta C/C)$, and long-term reliability. For a high density of 26 $hbox{fF}/mu hbox{m}^{2}$ , good extrapolated ten-year reliability of small $Delta C/ break C sim hbox{0.71}%$ is obtained for the $ hbox{Ni/10-nm-}hbox{TiO}_{2}/hbox{6.5-nm-} hbox{ZrO}_{2}/break hbox{TiN}$ device at 2.5-V operation.      

BST材料在DRAM电容中的应用研究

钛酸锶钡(BST)高介电常数材料被普遍认为是最有前途的DRAM电容介质材料。BST作为DRAM电容介质材料的研究已有多年，到目前为止取得了不少突破性的进展。介绍了BST的材料特性和堆积型电容结构电极、埋层材料的设计考虑，探讨了BST膜的制备、掺杂及刻蚀工艺技术。     

430-V 12.4-$hboxmOmegacdot hboxcm^2$Normally off 4H-SiC Lateral JFET

This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8$muhboxm$created by tilted aluminum implantation on the sidewalls of deep trenches and a lateral drift-region length of 5$muhboxm$. Normally off operation$(V_ GS=hbox0 V)$with a blocking voltage$V_ br$of 430 V has been achieved with a specific on-resistance$R_ onhbox- sp$of 12.4$hboxmOmega cdot hboxcm^2$, which is the lowest specific on-resistance for 4H-SiC lateral power switches reported to date, resulting in a$V_ br^2/R_ onhbox- sp$value of 15$hboxMW/cm^2$. This is among the best$V_ br^2/R_ onhbox- sp$figure-of-merit reported to date for 4H-SiC lateral high-voltage devices.     

Ytterbium-Doped P$_2$O$_5$-TeO $_2$ Glass for Laser Applications

Ytterbium-doped sodium phospho-tellurite glasses are made with different P₂O₅:TeO₂ ratio, and Yb³⁺ concentrations. Physical properties of the new Yb hosts are favorable for laser applications. The glasses show high absorption and emission cross sections and higher lifetime of Yb³⁺:²F_5/2rarr²F_7/2 transition. The emission cross sections are calculated using two different methods and compared. The laser parameters of these Yb³⁺ -doped glasses are better than many reported glasses and crystals making them potential to fabricate high power laser and broadband optical amplifier in the wavelength region around ~1 mum     

Characteristic Instabilities in HfAlO Metal–Insulator–Metal Capacitors Under Constant-Voltage Stress

Time-dependent characteristic changes of metal-insulator-metal (MIM) capacitors with HfAlO dielectric prepared by atomic-layer deposition under constant-voltage stress (CVS) were studied. It was found that relative dielectric constant , dielectric loss , temperature coefficient of capacitance , and frequency coefficient of capacitance gradually increase during CVS testing, whereas the voltage dependence of capacitance weakens. It was also found that changes in -value, , and during CVS testing linearly depend on changes in . These three linear relationships are basically explained by a dielectric-response model proposed for a ldquoflat-lossrdquo dielectric. That is, the increases in -value, , and are attributed to the dielectric-loss increase caused by voltage stress. Stress-time dependence of the dielectric-loss increase is expressed very well by a power function. That is, the power exponent obtained by a curve fitting linearly increases with stress voltage and decreases with increasing aluminum concentration in the HfAlO dielectric. This result indicates that aluminum addition into the HfAlO dielectric can improve the characteristic stabilities of a MIM capacitor under voltage stress.     

获VDE认证的金属化薄膜交流电动机电容器

东莞奥斯威电子有限公司生产的交流４５０Ｖ及４００Ｖ，０．５～６．０μＦ交流电动机电容器通过了德国ＶＤＥ认证。重视原材料（金属化聚丙烯薄膜、喷金料、含浸剂、外壳）的选择。狠抓关键工艺（卷绕、端面喷金、热处理及含浸、赋能）。采用特殊的工艺是真空干燥及含浸