共查询到20条相似文献,搜索用时 31 毫秒
1.
Branko Matovic Georg Rixecker Fritz Aldinger 《Journal of the American Ceramic Society》2004,87(4):546-549
This paper deals with the densification and phase transformation during pressureless sintering of Si3 N4 with LiYO2 as the sintering additive. The dilatometric shrinkage data show that the first Li2 O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si3 N4 to β-Si3 N4 taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si3 N4 to β-Si3 N4 takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li2 O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li2 O−Y2 O3 system can provide very effective low-temperature sintering additives for silicon nitride. 相似文献
2.
Martin Krämer 《Journal of the American Ceramic Society》1993,76(6):1627-1629
α-Si3 N4 core structures within β-Si3 N4 grains have been studied by transmission electron microscopy. The grains were dispersed in an oxynitride glass which was previously melted at 1600°C. The cores were topotactically related to the as-grown β-Si3 N4 crystallites and are related to epitactical nucleation during heat treatment as the most probable mechanism. 相似文献
3.
Gui-hua Peng Guo-jian Jiang Wen-lan Li Bao-lin Zhang Li-dong Chen 《Journal of the American Ceramic Society》2006,89(12):3824-3826
α/β-Si3 N4 composites with various α/β phase ratios were prepared by hot pressing at 1600°–1650°C with MgSiN2 as sintering additives. An excellent combination of mechanical properties (Vickers indentation hardness of 23.1 GPa, fracture strength of about 1000MPa, and toughness of 6.3 MPa·m1/2 ) could be obtained. Compared with conventional Si3 N4 -based ceramics, this new material has obvious advantages. It is as hard as typical in-situ-reinforced α-Sialon, but much stronger than the latter (700 MPa). It has comparable fracture strength and toughness, but is much harder than β-Si3 N4 ceramics (16 GPa). The microstructures and mechanical properties can be tailored by choosing the additive and controlling the heating schedule. 相似文献
4.
Gui-hua Peng Min Liang Zhen-hua Liang Qing-yu Li Wen-lan Li Qian Liu 《Journal of the American Ceramic Society》2009,92(9):2122-2124
Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si3 N4 powders as raw materials and MgSiN2 as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si3 N4 phase left in the sintered material. α-Si3 N4 was completely transformed to β-Si3 N4 after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)−1 was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si3 N4 ceramics with high thermal conductivity when appropriate additives are used. 相似文献
5.
Soo Young Lee 《Journal of the American Ceramic Society》1998,81(5):1262-1268
Si3 N4 /SiC composite materials have been fabricated by reaction-sintering and postsintering steps. The green body containing Si metal and SiC particles was reaction-sintered at 1370°C in a flowing N2 /H2 gas mixture. The initial reaction product was dominated by alpha-Si3 N4 . However, as the reaction processed there was a gradual increase in the proportion of β-Si3 N4 . The reaction-bonded composite consisting of alpha-Si3 N4 , β-Si3 N4 , and SiC was heat-treated again at 2000°C for 150 min under 7-MPa N2 gas pressure. The addition of SiC enhanced the reaction-sintering process and resulted in a fine microstructure, which in turn improved fracture strength to as high as 1220 MPa. The high value in flexural strength is attributed to the formation of uniformly elongated β-Si3 N4 grains as well as small size of the grains (length = 2 μm, thickness = 0.5 μm). The reaction mechanism of the reaction sintering and the mechanical properties of the composite are discussed in terms of the development of microstructures. 相似文献
6.
Morphology, composition, and growth defects of α'-SiAION have been studied in a fine-grained material with an overall composition Y0.33 Si10 Al2 O1 N15 prepared from α-Si3 N4 , AlN, Al2 O3 , and Y2 O3 powders. TEM analysis has shown that fully grown α'-SiAloN grains always contain an α-Si3 N4 core, implicating heterogeneous nucleation operating in the present system. The growth mode is epitaxial, despite the composition and lattice parameter difference between α-Si3 N4 and α'-SiAlON. The inversion boundary that separates two domains in the seed crystal is seen to continue in the grown α'-SiAION. Lacking a special growth habit, the growth typically proceeds from more than one site on the seed crystal, and the different growth fronts impinge on each other to give an equiaxed appearance of α'-SiAlON. Misfit dislocations on the α/α'interface are identified as [0001] type ( b = 5.62 Å) and 1/3 [1 2 10] type ( b = 7.75 Å). These nucleation and growth characteristics dictate that microstructural control of α'-SiAlON must rest on the size distribution of the starting α-Si3 N4 powder. 相似文献
7.
Mamoru Mitomo Yoh-ichiro Sato Nobuo Ayuzawa Isamu Yashima 《Journal of the American Ceramic Society》1991,74(4):856-858
Plasma etching of β-Si3 N4 , α-sialon/β-Si3 N4 and α-sialon ceramics were performed with hydrogen glow plasma at 600°C for 10 h. The preferential etching of β-Si3 N4 grains was observed. The etching rate of α-sialon grains and of the grain-boundary glassy phase was distinctly lower than that of β-Si3 N4 grains. The size, shape, and distribution of β-Si3 N4 grains in the α-sialon/β-Si3 N4 composite ceramics were revealed by the present method. 相似文献
8.
Fengxia Li Li Fu Xiaojian Ma Changhui Sun LianCheng Wang Chunli Guo Yitai Qian Yitai Qian 《Journal of the American Ceramic Society》2009,92(2):517-519
Starting from Si powder, NaN3 and different additives such as N -aminothiourea, iodine, or both, Si3 N4 nanomaterials were synthesized through the nitridation of silicon powder in autoclaves at 60°–190°C. As the additive was only N -aminothiourea, β-Si3 N4 nanorods and α-Si3 N4 nanoparticles were prepared at 170°C. If the additive was only iodine, α-Si3 N4 dendrites with β-Si3 N4 nanorods were obtained at 190°C. However, when both N -aminothiourea and iodine were added to the system of Si and NaN3 , the products composed of β-Si3 N4 nanorods and α, β-Si3 N4 nanoparticles could be prepared at 60°C. 相似文献
9.
Youren Xu Chao M. Huang Waltraud M. Kriven Avigdor Zangvil 《Journal of the American Ceramic Society》1994,77(8):2213-2216
The microstructure of a pressureless sintered (1605°C, 90 min) O'+β' SiAlON ceramic with CeO2 doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20–30 μm long), and a continuous matrix of small rodlike β' grains (< 1.0 μm in length). Many α-Si3 N4 inclusions (0.1–0.5 μm in size) were found in the large O' grains. CeO2 -doping and its high doping level as well as the high Al2 O3 concentration were thought to be the main reasons for accelerating the reaction between the α-Si3 N4 and the Si-Al-O-N liquid to precipitate O'–SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant α–Si3 N4 from the reacting liquid, resulting in a delay in the α→β-Si3 N4 transformation. The large O' grains and the α-Si3 N4 inclusions have a pronounced effect on the strength degradation of O'+β' ceramics. 相似文献
10.
The kinetics of anisotropic β-Si3 N4 grain growth in silicon nitride ceramics were studied. Specimens were sintered at temperatures ranging from 1600° to 1900°C under 10 atm of nitrogen pressure for various lengths of time. The results demonstrate that the grain growth behavior of β-Si3 N4 grains follows the empirical growth law Dn – D0 n = kt , with the exponents equaling 3 and 5 for length [001] and width [210] directions, respectively. Activation energies for grain growth were 686 kJ/mol for length and 772 kJ/mol for width. These differences in growth rate constants and exponents for length and width directions are responsible for the anisotropy of β-Si3 N4 growth during isothermal grain growth. The resultant aspect ratio of these elongated grains increases with sintering temperature and time. 相似文献
11.
Elongated β'-SiAlON grains grown from several finegrained Ym/3 Si12(m+n) Alm+n On N16–r compositions with α-Si3 N4 , AlN, Al2 O3 , and Y2 O3 starting materials have been examined. These grains have large aspect ratios and are oriented along the [0001] axis. TEM structural and chemical analysis suggests that they are nucleated from various seed crystals, which can be α-Si3 N4 , β-Si3 N4 , or other β'-SiAlON. The β'-SiAlON seed and the initial precipitation on β-Si3 N4 show a higher content of Al and O, indicating that a large transient supersaturation of Al and O in the liquid is instrumental for β'-SiAlON formation, whereas subsequent growth proceeds under a much lower driving force. The misfit between phases is accommodated by interfacial dislocations ( c -type and a -type). Fully grown β'-SiAlON grains usually contain several variants independently nucleated from the same seed. In particular, the two alternative α/β phase-matching possibilities result in two [0001] growth habits separated by a twin boundary. 相似文献
12.
Jianren Zeng Yoshinari Miyamoto Osamu Yamada 《Journal of the American Ceramic Society》1991,74(9):2197-2200
Fine Si3 N4 -SiC composite powders were synthesized in various SiC compositions to 46 vol% by nitriding combustion of silicon and carbon. The powders were composed of α-Si3 N4 , β-Si3 N4 , and β-SiC. The reaction analysis suggested that the SiC formation is assisted by the high reaction heat of Si nitridation. The sintered bodies consisted of uniformly dispersed grains of β-Si3 N4 , β-SiC, and a few Si2 N2 O. 相似文献
13.
C. Greskovich 《Journal of the American Ceramic Society》1981,64(2):31-C-
The development of microstructure in hot-pressed Sia N4 was studiehd for a typical Si3 N4 powder with and without BeSiN2 as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si3 N4 conversion and specific surface area showed that BeSiN2 appears to increase the mobility of the system by enhancing densification, α- to β-Si3 N4 transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase. 相似文献
14.
IRVIN C. HUSEBY† HANS L. LUKAS GÜNTER PETZOW 《Journal of the American Ceramic Society》1975,58(9-10):377-380
The 1780°C isothermal section of the reciprocal quasiternary system Si3 N4 -SiO2 -BeO-Be3 N2 was investigated by the X-ray analysis of hot-pressed samples. The equilibrium relations shown involve previously known compounds and 8 newly found compounds: Be6 Si3 N8 , Be11 Si5 N14 , Be5 Si2 N6 , Be9 Si3 N10 , Be8 SiO4 N4 , Be6 O3 N2 , Be8 O5 N2 , and Be9 O6 N2 . Large solid solubility occurs in β-Si3 N4 , BeSiN2 , Be9 Si3 N10 , Be4 SiN4 , and β-Be3 N2 . Solid solubility in β-Si3 N4 extends toward Be2 SiO4 and decreases with increasing temperature from 19 mol% at 1770°C to 11.5 mol% Be2 SiO4 at 1880°C. A 4-phase isotherm, liquid +β-Si3 N4 ( ss )Si2 ON2 + BeO, exists at 1770°C. 相似文献
15.
Superplastic SiAlON's of the nominal composition Y m /3 -Si12-( m + n ) AL m + n O n N16– n are reported in this study using a transient-phase-forming approach. They encompass the fields of single-phase α'-SiAlON, single-phase β'-SiAlON, and their two-phase mixtures. Excellent formability is obtained at 1550°C for the β'and α'+β'materials, and at 1600°C for the α'material. Typically in the nonequilibrium state before deformation, these fine-grained materials undergo dramatic phase and microstructure evolutions during superplastic forming. In particular, the stress-biased α-Si3 N4 →β'-SiAlON reaction is found to result in elongated and aligned grains with fiber-strengthening effect and excellent formability. 相似文献
16.
C. GRESKOVICH 《Journal of the American Ceramic Society》1981,64(12):725-730
Si3 N4 compacts, containing ≅7 wt% of both BeSiN2 and SiO2 as densification aids, can be reproducibly sintered to relative densities >99% by a gas-pressure sintering process. Nearly all densification takes place via liquid-phase sintering of transformed β-Si3 N4 grains at T =1800° to 2000°C. Compacts with high density are produced by first sintering to the closed-pore stage (≅92% relative density) in 2.1 MPa (20 atm) of N2 pressure at 2000°C and then increasing the N2 pressure to 7.1 MPa (70 atm) where rapid densification proceeds at T = 1800° to 2000°C. The experimental density results are interpreted in terms of theoretical arguments concerning the growth (coalescence) of gas-filled pores and gas solubility effects. Complex chemical reactions apparently occur at high temperatures and are probably responsible for incomplete understanding of some of the experimental data. 相似文献
17.
Gas-pressure sintering of α-Si3 N4 was carried out at 1850 ° to 2000°C in 980-kPa N2 . The diameters and aspect ratios of hexagonal grains in the sintered materials were measured on polished and etched surfaces. The materials have a bimodal distribution of grain diameters. The average aspect ratio in the materials from α-Si3 N4 powder was similar to that in the materials from β-Si3 N4 powder. The aspect ratio of large and elongated grains was larger than that of the average for all grains. The development of elongated grains was related to the formation of large nuclei during the α-to-β phase transformation. The fracture toughness of gaspressure-sintered materials was not related to the α content in the starting powder or the aspect ratio of the grains, but to the diameter of the large grains. Crack bridging was the main toughening mechanism in gas-pressure-sintered Si3 N4 ceramics. 相似文献
18.
Nanocrystalline α-Si3 N4 powders have been prepared with a yield of 93% by the reaction of Mg2 Si with NH4 Cl in the temperature range of 450° to 600°C in an autoclave. X-ray diffraction patterns of the products can be indexed as the α-Si3 N4 with the lattice constants a = 7.770 and c = 5.627 Å. X-ray photoelectron spectroscopy analysis indicates that the composition of the α-Si3 N4 samples has a Si:N ratio of 0.756. Transmission electron microscopy images show that the α-Si3 N4 crystallites prepared at 450°, 500°, and 550°C are particles of about 20, 40, and 70 nm in average, respectively. 相似文献
19.
β-Si3 N4 ceramics sintered with Yb2 O3 and ZrO2 were fabricated by gas-pressure sintering at 1950°C for 16 h changing the ratio of "fine" and "coarse" high-purity β-Si3 N4 raw powders, and their microstructures were quantitatively evaluated. It was found that the amount of large grains (greater than a few tens of micrometers) could be drastically reduced by mixing a small amount of "coarse" powder with a "fine" one, while maintaining high thermal conductivity (>140 W·(m·K)−1 ). Thus, this work demonstrates that it is possible for β-Si3 N4 ceramics to achieve high thermal conductivity and high strength simultaneously by optimizing the particle size distribution of raw powder. 相似文献
20.
Jun-Qi Li Fa Luo Dong-Mei Zhu Wan-Cheng Zhou 《Journal of the American Ceramic Society》2007,90(6):1950-1952
The influence of phase formation on the dielectric properties of silicon nitride (Si3 N4 ) ceramics, which were produced by pressureless sintering with additives in MgO–Al2 O3 –SiO2 system, was investigated. It seems that the difference in the dielectric properties of Si3 N4 ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si3 N4 , β-Si3 N4 , and the intermediate product (Si2 N2 O) in the samples. Compared with α-Si3 N4 and Si2 N2 O, β-Si3 N4 is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si3 N4 could be attributed to the ionic relaxation polarization. 相似文献