TFT AMLCD像素矩阵电路中栅延迟的模拟研究

建立了ａ－ＳｉＴＦＴＡＭＬＣＤ的等效电路模型,综合考虑栅信号线电阻、栅与源信号线的交叠电容以及ＴＦＴ导电沟道电容构成的ＲＣ（ＲｅｓｉｓｔｉｖｉｔｙＣａｐａｃｉｔａｎｃｅ）常数,模拟计算了栅信号延迟对液晶显示屏尺寸、显示分辨率及栅信号电极材料的依赖关系,为实现器件优化设计提供参考。     

薄膜晶体管寻址液晶显示器中栅延迟导致的图像信号失真

考虑栅信号线电阻、栅民源信号线的交叠电容以及ＴＦＴ导电沟道电容所构成的ＲＣ常数对栅延迟的影响，建立了ａ－ＳｉＴＦＴ－ＬＣＤ的等效电路模型。讨论了栅信号延迟对液晶显示屏尺寸、显示分辨率及民极材料的依赖关系。计算了用典型金属材料作民极时，在栅线的不直，象素电容的最大充电能力与栅延迟，为大面积、高分辨率ＴＦＴ－ＬＣＤ提供了设计依据。     

驱动视频TFT—LCD的CMOS集成电路

北京大学微电子所于1991年4月在国内首次研制成功了用于驱动薄膜晶体管(TFT)有源矩阵液晶电视显示屏的专用GMOS集成电路。它包括栅驱动器——扫描电极总线驱动电路BDD1001和漏驱动器——信号电极总线驱动电路BDD2001两块IC。适合于驱动200线左右的TFT有源矩阵液晶电视显示屏。 用于TFT有源矩阵液晶电视显示屏的专用IC的具体结构参数、性能要求是由矩阵驱动方式、扫描方法、液晶材料的性质及电光特性、TFT的性     

PDLC液晶驱动电路设计

根据矩阵显示屏驱动控制原理,采用偏压法抑制矩阵液晶的交叉效应。同时,针对聚合物分散型液晶PDLC驱动电压较高的特点,设计了耐压较高的晶体管开关电路作为偏压信号的传输门电路。MCU将行扫描信号及字模信号分别送至译码器及移位锁存电路,作为传输门的控制信号,将对应的行列电极信号送至PDLC显示屏,实现信息的显示。     

12.7 cm彩色AM-OLED显示屏的驱动模块

运用分场数字灰度技术可以提高低温多晶硅(LTPS)AM-OLED显示屏的灰度精确性和亮度均匀性。但随着屏幕尺寸及分辨率的增大,电路工作频率会呈指数上升。采用复合乒乓处理结构、驱动IC并行工作、分场数据双通道输出等技术,使得电路的工作频率相对于原设计值降低了4倍。电路采用数字视频接口(DVI)作为视频传输接口,FPGA作为控制核心,最终实现了12.7cm(5in)(320×240)彩色AM-OLED显示屏的实时动态视频显示;灰度为16级,帧频为60Hz,取得了较好的显示效果。     

周边集成AMLCD的信号失真的和缓冲寄存器TFT尺寸计算

建立了有源矩阵液晶显示器中周边驱动缓冲寄存器的等效电路模型。利用ＴＦＴ的线性近似和Ｅｍｏｒｅ模型，计算了周边驱动电路中的信号失真，讨论了栅延迟与栅电极材料的叛乱级对ＴＦＴ开态电阻的要求。     

周边集成AMLCD的信号失真和缓冲寄存器TFT尺寸计算

建立了有源矩阵液晶显示器中周边驱动缓冲寄存器的等效电路模型。利用 Ｔ Ｆ Ｔ 的线性近似和 Ｅｌｍ ｏｒｅ 模型, 计算了周边驱动电路中的信号失真, 讨论了栅延迟与金属栅电极材料的关系及对 Ｔ Ｆ Ｔ 开态电阻的要求。     

LED显示屏初步设计方案的建模与实例

介绍LED显示屏初步设计方案应考虑的问题，探讨显示尺寸、分辨率以及显示屏座高等应如何建立数学模型，并提供一个计算实例。     

一种提升时序彩色微显示屏显示分辨率的方法及MATLAB验证

随着视频源分辨率越来越高,对微显示屏制造工艺、像素物理尺寸、成本等提出了更高的要求。区别于以往提升空间彩色微显示屏显示分辨率的方法,提出了一种适用于提升时序彩色微显示屏显示分辨率的亚像素级数据重组融合算法,其可进一步提升显示分辨率倍数至12倍以上,优于传统空间彩色显示和时序彩色显示。首先,对原始数据帧进行降采样处理,按照配置,生成若干个子数据帧;其次,同时操作子数据帧,使得其中的每一物理像素点携带的像素信息与其周围算法范围内的物理像素点完成信息交互融合;最后,得到基于算法的全新数据帧并用于显示,显示效果逼近视频源,优于自身分辨率。这在一定程度上突破了微显示屏自身分辨率的限制,实现高分辨率显示,提高了微显示屏通用性。     

带状束矩形栅毫米波行波管的研究

为了克服单模近似法(SMA)在分析矩形栅慢波系统高频特性的局限性,用“本征函数法”得到了其色散特性,进而求得耦合阻抗.并针对矩形栅的两种典型结构(浅槽栅和深槽栅)进行数值计算,分析了金属栅的几何尺寸对系统高频特性的影响.设计出3 cm、8mm波段的矩形栅模型,进行实验测量,实验值与理论值符合良好.导出了考虑电子注时的“热”色散方程,得到其小信号增益,讨论了电子注参数和慢波电路几何尺寸对小信号增益的影响,为矩形栅慢波系统行波管的设计提供了理论基础.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks