细晶粒BaTiO3陶瓷电阻率的尺寸效应

在不同的测试电压条件下,对不同晶粒尺寸的BaTiO3陶瓷室温下的电阻率进行了测量;结合室温下的复阻抗谱,采用简化的等效电路模型和净极化电流的理论,分析了高、低频率下晶粒和晶界对瓷体电阻的影响.     

Investigations on Al/BaTiO3/GaN MFS structures

A metal–insulator–semiconductor (MIS) device structure has been established on GaN by using BaTiO₃, a ferroelectric material, as an insulating layer. The composition of the deposited ferroelectric layers was studied using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray (EDX) analysis. Fabricated Al/BaTiO₃/GaN metal–ferroelectric–semiconductor (MFS) structures have been characterised through capacitance–voltage (C–V) measurements. Improved C–V characteristics have been observed in comparison to other traditional oxide insulators. An inversion of GaN MFS structures has been attained just for the applied voltage of 5 V due to the high dielectric constant and large polarisation field of the gate ferroelectric layer. The bias stress measurements indicate a high stability of the ferroelectric material over a period of 10⁴ s.     

The effects of gallium droplets on the morphologies and structures of alpha-Fe2O3 nanostructures grown on iron substrates

Alpha-Fe2O3 nanowires and nanobelts were grown by the thermal oxidation of iron substrates with or without gallium droplets in the air. The nanowires and nanobelts show a bicrystal structure with the growth direction uniformly along [110]. The morphological and structural properties of the as-grown alpha-Fe2O3 nanostructures are described and the growth condition dependence of the alpha-Fe2O3 nanostructures is shown. The transformation from nanowires to nanobelts occurs with the increase of growth temperature and addition of gallium. In addition, the growth evolution is investigated with reference to the Fe surface diffusion and supersaturation.     

尺寸效应对细晶粒BaTiO3陶瓷电滞现象的影响

考虑到转向极化和反向畴的成核生长过程的综合影响,引入了一个反映两种过程影响程度的比例参数,对细晶粒BaTiO3陶瓷的电滞回线进行了理论分析,其结论与试验结果是极其一致的,这将有助于深入了解晶粒尺寸效应对BaTiO3陶瓷极化影响的机制。     

CIGS thin-film solar cells on steel substrates

Steel foil is an attractive candidate for use as a flexible substrate material for Cu(In_x,Ga_1 − x)Se₂ solar cells (CIGS). It is stable at the high temperatures involved during CIGS processing and is also commercially available. Stainless chromium (Cr) steel is more expensive than Cr-free steel sheets, but the latter are not stable against corrosion. We processed CIGS solar cells on both types of substrates. The main problem arising here is the diffusion of detrimental elements from the substrate into the CIGS absorber layer. The diffusion of iron (Fe) and other substrate elements into the CIGS layer was investigated by Secondary Ion Mass Spectrometry (SIMS). The influence of the impurities on the solar cell parameters was determined by current voltage (JV) and external quantum efficiency (EQE) measurements. A direct correlation between the Fe content in the CIGS layer and the solar cell efficiency was found. The diffusion of Fe could be strongly reduced by a diffusion barrier layer. Thus we could process CIGS solar cells with a conversion efficiency of 12.8% even on Cr-free steel substrate.     

Human fibroblast attachment on fibrous parylene-C thin-film substrates

Although the polymeric form of parylene-C is used in many medical devices, the mechanistic nature of cellular attachment to polymeric parylene-C is not clear. We examined the effects of (i) substrate morphology, (ii) surface wettability and (iii) presence of serum proteins on fibroblast attachment. A physicochemical vapor deposition technique was implemented to deposit flat parylene-C substrates as well as fibrous substrates of three different morphologies: slanted columnar, chevronic and chiral. Flat parylene-C surfaces were moderately hydrophobic while fibrous substrates were superhydrophobic. Pretreatment with oxygen plasma changed the substrate surfaces from hydrophobic to superhydrophilic. The attachment efficiency of human fibroblast cells to the flat and three fibrous thin-film parylene-C substrates was investigated. Fibroblast attachment was better on fibrous substrates than on flat substrates, and oxygen plasma pretreatment facilitated fibroblast attachment on all four morphologies. Serum proteins also facilitated cell attachment on all substrates. The combination of oxygen plasma pre-treatment and serum proteins increased fibroblast adhesion in an additive manner on flat, but not on fibrous parylene-C substrates. The morphology of cell–substrate interactions differed between fibrous and flat parylene-C substrates.     

Oxide heterogrowth on ion-exfoliated thin-film complex oxide substrates

Fabrication of a bilayer HfO₂/single-crystal LiNbO₃ film is demonstrated using deep high-energy He⁺ implantation in a LiNbO₃ wafer, followed by HfO₂ atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO₃ crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO₃ film, are also demonstrated.     

Solarization of glass substrates during thin-film deposition

We demonstrate that solarization occurs in glass substrates during thin-film deposition and that it induces high absorption near the surface of the substrate. Solarization has been observed especially in ion-plating deposition. We show that the solarization of the substrate is caused by electromagnetic radiation emitted from the material to be evaporated. The radiation is due to the energy losses of the heating beam of electrons (bremsstrahlung radiation). Multicomponent glasses such as BK7 are much more sensitive to solarization than fused-silica substrates. The photoinduced high absorption can be partially reversed by thermal annealing.     

Influences of particle size upon room temperature structure of BaTiO3 thin films on p-Si substrates

The current study performed the growth of BaTiO₃ thin film on p-Si substrate by using RF-Magnetron sputtering system and the effects of thickness and particle size of the thin film on several structural characteristics of thin film were investigated. Initially, the interrelationship between the thickness and particle size of thin film was elucidated. Based upon the results obtained, the systematic study was made to evaluate the influences of particle size of BaTiO₃ thin film on crystal quality, crystal structure, lattice parameter, tetragonality, and stress. In case of BaTiO₃ thin film made of specific particle size less than 45 nm as in the current study, the XRD peak at (200) and Raman’s 630 cm⁻¹ band, both typical for cubic BaTiO₃, were observed at room temperature. In addition, the lattice parameter was increased and the tetragonality was decreased with the decrease of particle size. It was thus found that the particle size of that range could lead to the formation of cubic crystal structure even at room temperature. It was also shown that the decease of particle size results in the reduction of the stress applied to thin film. It was therefore demonstrated for the first time in this study that one can determine the room temperature crystal structure of BaTiO₃ thin film simply by controlling its particle size.     

MOCVD of Bi2Te3 and Sb2Te3 on GaAs substrates for thin-film thermoelectric applications

Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of -160 microVK(-1) for Bi2Te3 and +110 microVK(-1) for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.     

BiNbO4掺杂对BaTiO3基陶瓷的改性效应研究

对三元系统BaTiO3(BT)-Bi0.5Na0.5TiO3(BNT)-BiNbO4的微结构和介电性能进行了研究.1%(摩尔分数) BNT掺杂使BT的居里温度由127℃大幅提高到140℃.BiNbO4掺杂显著降低了高温端的电容温度变化率,相反低温端的电容温度变化率升高.掺杂3%～4%(摩尔分数)BiNbO4的BT陶瓷满足X8R特性.烧结温度过高时,居里峰明显被抑制,居里温度向低温移动,而低温介电峰向高温移动.SEM结果表明,1%(摩尔分数)BiNbO4掺杂时,陶瓷晶粒细小且尺寸均匀.BiNbO4含量增大,陶瓷内部出现异常生长的第二相晶粒,且第二相比例随BiNbO4含量增加而增大.XRD分析表明,基质晶粒为BaTiO3,第二相包括Ba2TiO4、NaBiTi2O6及BaTiNb4O13.     

Atmospheric pressure chemical vapour deposition of 3C-SiC for silicon thin-film solar cells on various substrates

The production of crystalline silicon thin-film solar cells on cost effective ceramic substrates depends on a highly reliable diffusion barrier to separate the light absorbing layers from the substrate. Ideally this intermediate layer should be deposited with cost effective techniques, be conductive and should feature optical confinement. Furthermore the intermediate layer should withstand high temperatures and harsh chemical environments like they occur during solar cell processing. Especially stability against oxidizing solvents like HNO3 or inactivity during e.g., oxide removing steps with HF is required. Crystalline silicon carbide (c-SiC) deposited by atmospheric pressure chemical vapour deposition (APCVD) can match all those requirements and additionally fits the thermal properties of crystalline silicon. The c-SiC intermediate layer is deposited from methyltrichlorosilane (MTS) and H2 at 1100 degrees C. Under these conditions, growth of solely cubic 3C-SiC could be observed by X-ray diffraction measurements. Use of such intermediate layers during high temperature steps prevents diffusion of transition metals, originating from the substrates, into active silicon layers. Doping of these 3C-SiC layers with nitrogen results in specific resistivity of less than 100 ohms cm. The different potentially cost-effective substrates are made from graphite, crystalline silicon, sintered silicon carbide and sintered zircon (ZrSiO4). Surface properties of the coated substrates were investigated, explaining changes in surface roughness and influences on the solar cell processing.     

Formation of self-ordering relief in the thin-film structures

The results of the preliminary experimental study on a self-organization of corrugated periodic structures are presented. The phenomenon was discovered when producing double-layer film composed of metal and polymer layers.     

多巴胺改性BaTiO_3对BaTiO_3/PVDF复合材料击穿场强的影响

为了提高BaTiO3/PVDF复合材料的击穿场强。首先,利用多巴胺对BaTiO3进行表面功能化处理,得到多巴胺改性的BaTiO3(Dopa@BaTiO3);然后,将其与聚偏氟乙烯(PVDF)混合,采用液相浇铸法制得Dopa@BaTiO3/PVDF复合材料;最后,测量了不同Dopa@BaTiO3添加量的Dopa@BaTiO3/PVDF复合材料的击穿场强和介电性能。结果表明:与改性前的BaTiO3/PVDF复合材料相比,Dopa@BaTiO3/PVDF复合材料在击穿场强显著提高的同时,介电常数基本保持不变;当Dopa@BaTiO3添加量为3vol%时,击穿场强为210kV/mm,比改性前的复合材料的提高了78%;当Dopa@BaTiO3添加量为10vol%时,击穿场强为180kV/mm,比改性前的合材料的提高了88%。研究解决了BaTiO3/PVDF复合材料击穿场强较低的问题,可为同时提高复合材料的介电常数和击穿场强提供参考。     

The role of epoxy matrix occlusions within BaTiO3 nanoparticles on the dielectric properties of functionalized BaTiO3/epoxy nanocomposites

In this work, the effects of controlled nanoparticles aggregations of barium titanate (BaTiO₃) on the dielectric properties of epoxy nanocomposites are investigated in detail with respect to different experimental parameters like frequency, ceramic content and temperature. Dispersing silanized BaTiO₃ nanopowder under ultrasonic and stir, nanocomposites of epoxy-amine matrix with different morphologies are obtained. The nanoparticles silane functionalization containing amine end groups effectively improve the compatibility of the nano-BaTiO₃ and the epoxy matrix. Storage modulus, glass transition temperature, tensile and flexural properties of nanocomposites and dielectric properties are increased until 10% by weight of nano-BaTiO₃ loading, well dispersed in the matrix. Above 10 wt.% of nano-BaTiO₃, scanning electronic microscopy and thermal analysis showed that agglomeration of nanoparticles occurs. Rheological and mechanical nanocomposites properties were evaluated and matrix occlusion behaviors were identified. In light of the specific behavior of the occluded polymer, the dielectric properties, especially dielectric loss are discussed.     

BaTiO3陶瓷中Gd、Ce的掺杂效应研究

在BaTiO3(BT)-Nb2O5-ZnO系统中引入硼硅酸盐助烧剂,加入Gd、Ce稀土氧化物以期获得中温烧结X7R陶瓷材料.研究发现,随着Gd用量的增加,单独掺杂时陶瓷室温介电常数先减小后增大,而与Ce复合掺杂时室温介电常数单调递增,分析认为,这是由于Gd在BT晶粒中对A位和B位的不同取代造成;随着Ce掺杂量的增大,室温介电常数减小,这与壳芯结构理论吻合.SEM图分析发现,Gd、Ce共掺杂BT陶瓷晶粒生长明显大于单独掺Gd或Ce的BT陶瓷,且陶瓷气孔率低,致密化程度高.     

Effect of the dispersibility of BaTiO3 nanoparticles in BaTiO3/polyimide composites on the dielectric properties

We have investigated the effect of coupling agents with different organic moiety on the dielectric properties of polyimide/BaTiO₃ (70 nm) composite films. INAAT (isopropyl tris(N-amino-ethyl aminoethyl)titanate, KR 44) and APTS (3-amino-propyl-triethoxysilane) were used as coupling agents, respectively, for homogeneous dispersion of BaTiO₃ particles into a polyimide matrix. The composite films were prepared by pyromellitic dianhydride (PMDA) and 4,4′-oxydianiline (ODA)-based polyimide. Enhanced dispersion of BaTiO₃ particles was obtained by the use of INAAT with more organic moiety compared to that afforded by APTS. The polyimide composite with BaTiO₃ particles (BaTiO₃ content at 50 vol.%) treated by INAAT showed an increased dielectric constant of 19.03 while retaining an appropriate dielectric loss of 0.0109, as compared to the dielectric constant (14.64) of polyimide/APTS-treated BaTiO₃ composite. The results of this work demonstrate the potential use of an INAAT coupling agent with more organo functional groups for obtaining enhanced dielectric properties in a polyimide/BaTiO₃ composite for application in an embedded capacitor.