通过SPI接口协议实现DSP与其它设备的通信

介绍了SPI通信协议 ,给出了将TI公司生产的TMS320C5402DSP用于SPI协议通信的串口配置方法和接口电路设计 ,同时给出了串口McBSP的配置程序。     

使用Nios Ⅱ嵌入式软核CPU配置快速锁定锁相环频率合成芯片ADF4193

介绍了锁相环的原理和ADF4193芯片的特点和配置方式,结合Altera的SOPC技术,利用SOPC Builder中集成的SPI核,设计了一种基于Nios II软核CPU的嵌入式系统,用来配置AD公司生产的快锁芯片ADF4193。实测结果表明,配置成功。并且经过适当修改可用于其他基于SPI串口配置的芯片。     

ATmega103单片机在跳频系统数字信号处理中的应用

文中介绍了ATMEL公司的高性能AVR单片机ATmega103的主要性能特点，给出了ATmega103在FH跳频系统数字信号处理模块中的应用方法，详细介绍了片内同步串口SPI的使用技巧，同时给出了SPI的通信应用程序。     

基于McBSP实现DSP与串行Flash之间的接口通讯

利用多通道缓冲串口McBSPO实现了TMS320VC5509 DSP与外部串行Flash之间的SPI通讯。完成了用DSP控制Flash进行在线系统编程。有效地降低了系统设计的复杂性，节省了空间。重点介绍了McBSP与Flash之间串行接口的设计，并介绍了TMS320VC5509串行8位引导装载的实现方法。同时给出用CSL库函数实现McBSP配置的程序。     

基于Xilinx FPGA的SPI Flash控制器设计与验证

基于Xilinx FPGA的SPI Flash控制器实现了一种在线配置Flash的方法。由于Flash芯片本身功能指令较多,使得对它进行直接操作变得非常困难,而利用FPGA丰富的逻辑资源以及产生精确时序的能力,以FPGA为主设备,SPI Flash为从设备,使FPGA一方面与电脑串口通信获得数据,另一方面对SPI Flash进行控制,这样就完成了FPGA配置数据的控制和存储。     

基于SPI互连的多串口系统

针对个人计算机只有1～2个串口,给同时连接多个串口设备进行联合测量带来的不便,提出了一种由多个单片机基于高速同步串行接口(SPI)才连的串口扩展方法.采用此方法所建的系统只需占用1个现有的串口或USB口,就可连接3个以上的串口设备.该系统由多个STC12C5410AD单片机构成主体,该型号单片机同时具有UART和SPI.系统中的单片机以"单主一多从"结构进行SPI总线互连,主机与从机通过SPI方式交换信息和数据,每个从机的串口可以连接1个外部串口设备并交换数据,同时主机的串口可与上位计算机相连,从而实现上位计算机通过该系统与多个下位串口设备交换数据.系统中,主机和从机都开辟有一定的数据缓存区,并且使主机的数据吞吐率高于从机的总和.此外,还介绍了教据交换协议、存储器的组织、软件结构等.     

DSP与正交数字上变频器AD9857的接口设计

AD9857是AD公司的一款高性能正变数字上变频器,根据其结构特点及工作原理,设计了TI公司的 TMS320VC5416 DSP和AD9857的接口电路,给出了两者遵从SPI协议通信的串口配置方法和DSP端多通道缓冲串行口McBSP 的配置程序。     

用SPI总线实现DSP和MCu之间的高速通信

简述了SPI总线协议工作时序和配置要求，通过一个成功的实例详细介绍了使用SPI总线实现DSP与MCU之间的高速通信方法，并参考实例给出了SPI接口的硬件连接、初始化、以及传输测试程序的编写方法。     

基于McBSP的漏水检测系统应用研究

简要介绍了漏水检测系统的工作流程,该系统要能够接收并处理A/D转换后的数据,具有无线传输数据的功能.选用DSP作为漏水检测的核心处理芯片,TI公司的TMS320VC5402提供两个McBSP,通过适当的寄存器设置,将其中一个McBSP配置成SPI接口主控设备与A/D转换模块相连;由于McBSP是同步串口,而无线通信模块XBee为异步串口,采用过采样的方法将McBSP软件配置成UART.该设计很好地满足了设计要求,充分利用了资源,软硬件实现简单.     

具有更宽工作电压范围的串并口F-RAM存储器

W系列F—RAM存储器带有串口I^2C、SPI接口和并行接口，能够提供2．7～5．5V的更宽电压范围。此外，W系列具有更高的性能，如有功电流（active current）需求降低了25％～50％，串口器件的首次存取启动（上电初始化）速度加快20倍。该系列中FM24W256和FM25W256器件分别带有256Kb串口I^2C与和SPI接口。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.