激光烧蚀Ag纳米颗粒的制备和光学特性

利用Nd:YAG(523 nm)脉冲激光器对处于去离子水中的Ag片进行激光烧蚀,得到了Ag纳米颗粒与去离子水形成的Ag纳米胶体体系.由于制备这种Ag纳米胶体的是一种物理过程,所以具有较高的纯净性;由于这种Ag纳米胶体中无任何氧化剂或还原剂等外来杂质的干扰,具有非常好的纯净性和很好的表面增强Raman散射(SERS)活性.以对羟基苯甲酸(PHBA)作为探针分子,对这种增强基底的效果进行检测;并用量子化学中的理论模拟计算方法,对比研究了实验和理论的结果.     

树枝状Ag基底的制备及其SERS活性研究

研究了一种表面增强拉曼散射(SERS)活性Ag基底的制备新方法。通过电化学方法和液相生长方法相结合在金属Al表面制备SERS活性Ag膜。用扫描电子显微镜(SEM)表征Ag膜的表面形貌,以结晶紫(C25 H30N3Cl·H2O)为拉曼探针分子,研究了基底的SERS增强效果。研究表明:结晶紫分子吸附在Ag膜表面的SERS强度随电沉积时间的增加呈现先增强后减弱的趋势;进一步的Ag增强剂和引发剂的混合溶液对电沉积Ag膜的浸泡处理可以调节基底Ag膜的结构形态,增强电沉积基底Ag膜的SERS活性。     

Ag、Au纳米颗粒的激光表面修饰

通过用Nd：YAG激光（λ=1064nm）对氧化还原法制备的Ag、Au纳米颗粒的修饰,使Ag、Au纳米颗粒的尺寸均匀性得到更好的改善。用透射电子显微镜（TEM）和紫外-可见表面等离于体吸收（SPA）光谱对激光修饰后的Ag、Au纳米颗粒进行了测量和表征,结果表明,这些被修饰过的Ag、Au纳米颗粒由于自身体系发生了改变,可以作为更高效表面增强拉曼光谱（SERS）的增强基底。     

C层包覆Ag纳米颗粒基底的表面增强拉曼散射研究

Ag纳米结构是最常用的表面增强拉曼散射(SERS) 活性基底,缺点是Ag的化学稳定性和 生物相容性比较差。为此,利用化学方法合成了一种新型的SERS活性基底—纳米碳层包覆的 Ag(Ag@C)纳米颗粒。利用透射电子显微镜(TEM)和紫外- 可见吸收光谱对制备的核壳结构纳米颗粒进行了表征,并研究了颗粒的SERS活性。结果表明 ,罗丹明6G(R6G)、结晶紫(CV)和孔雀石绿(MG)分子在Ag@C悬浮液中的SERS光谱强度 与在Ag胶中的SERS光谱强度相比显著增强。根据光谱 的变化规律推断,额外的增强来自于化学增强。由于C层的存在,相比于Ag纳米颗粒, Ag@C颗粒的化学稳定性和生物相容性都有所改进。     

基于Si基沉积拉曼增强活性Au膜的制备与表征

研究了一种新的表面增强拉曼活性Au基底的制备方法,采用无电镀沉积方法,通过HF和HAuCl4的混合溶液对Si片进行处理获得具有不同形貌的Si基Au膜,利用扫描电子显微镜(SEM)分析了基底的表面形态和结构,测定结晶紫分子在基底表面的拉曼光谱。结果表明,Si基Au膜表面的表面增强拉曼散射(SERS)增强随制备时间的增加呈现先增强后减弱的趋势,增强效果优于常用的Au胶体系,是一种非常高效的拉曼活性增强基底。     

获得金纳米颗粒表面C60 SERS的一种新方法

报道了覆金滤纸和滤膜上的C60表面增强拉曼散射(SERS),增强因子达到10^5以上。分别以吡啶和CS2为溶剂媒质,对C60吡啶金胶溶液、C60(吡啶)金胶滤纸以及C60(CS2)金胶滤膜3种体系进行了SERS研究和比较。由于其避开了溶剂和金胶中水的影响,这为金纳米颗粒表面C60 SERS研究提供了一套新的思路。通过群论计算分析,并与C60固体拉曼谱相比较,得到了大量的C60分子信息。     

应用置换反应制备高效SERS活性基底研究

利用预处理的铝片和铜片还原硝酸银溶液的方法获得了具有不同表面形貌的银纳米结构.扫描电子显微镜(SEM)图表明反应产物分别为花样和树枝状的银纳米结构.以对羟基苯甲酸(PHBA)作为探针分子,对这种新体系的表面增强拉曼散射(SERS)活性进行了研究,发现该体系是一种非常高效的SERS活性增强基底,并且其SERS活性优于用化学方法制备的银胶.本文对这种新型SERS活性基底的增强机制进行了讨论.     

不同尺寸金纳米颗粒的制备及其SERS性能

为了研究不同尺寸的金纳米颗粒作为表面增强喇曼散射(SERS)活性基底对表面增强喇曼光谱的影响,采用氯金酸作为金源,柠檬酸三钠作为还原剂及保护剂,通过控制柠檬酸三钠的加入量合成了不同尺寸的金纳米颗粒。通过扫描电子显微镜(SEM)和紫外可见分光光度计(UV-vis)等技术对金纳米颗粒进行了性质表征。利用喇曼光谱仪,以罗丹明B作为被检测探针,研究了三种不同尺寸的金纳米颗粒(20、50和100 nm)喇曼增强效果。通过喇曼光谱图发现20和50 nm的金纳米颗粒具有较好的SERS效果。随后以20 nm的金纳米颗粒为SERS活性基底,对表面增强喇曼光谱检测罗丹明B的检测限进行了研究,可以使罗丹明检测限灵敏度达到10-9 mol/L。     

功能化纳米结构SERS基底设计制备及药物检测应用研究进展

表面增强Raman散射(SERS)作为一种可提供分子结构信息的振动能谱,可实现分子尺度上物质特异性的高精度检测。在医疗健康领域中,对于药理成分、药物质量的分析监控至关重要,由于表面增强Raman散射传感器具有高灵敏度、快速检测等优点,在药物分析研究中具有广阔应用前景。分析了功能化纳米结构SERS基底的组成和工作原理;介绍了功能材料、纳米结构、增强热点处表面工程的设计和制备方法;总结了SERS基底的设计用于西药用药监测和中药药效分析、质量监控方面的成果;最后对功能化纳米结构表面增强Raman散射传感器目前所面临的挑战和未来的前景进行了分析和展望。     

大面积图案化电场增强薄膜的设计及制备研究

采用有限时域差分（FDTD）法仿真了不同闪耀光栅结构上的银（Ag）薄膜模型。在633 nm的激发光下，闪耀光栅上周期为1/1200 mm、厚度为15 nm的Ag薄膜模型产生了较强的局域表面等离子体共振（LSPR）效应。利用机械刻划工艺和电子束蒸发镀膜工艺成功制备了这种Ag光栅薄膜，从而大幅降低了图案化电场增强薄膜的制备成本和难度。利用该电场增强Ag薄膜，基于表面增强拉曼散射（SERS），对亚甲基蓝染料进行检测，SERS信号强度增强，与FDTD仿真结果吻合。同时，基底不同位置处的主要特征峰强度的相对标准偏差（RSD）值都小于17%，薄膜表现出良好的均匀性和再现性。     

Interfacial reactions between In 10Ag solders and Ag substrates

The morphology and growth kinetics of intermetallic compounds formed during the reaction of liquid In 10Ag on Ag substrates in the temperature range between 250°C and 375°C are studied. The results indicate that the Ag₂In intermetallic compounds that appear at the interface are in the columnar shape, enveloped by thin AgIn₂ shells. The growth kinetics of intermetallic compounds are parabolic, indicating that the reaction is diffusion-controlled. The Arrhenius reaction activation energy was found to be 44.9 kJ/mol. Also, the wetting behavior of the In10Ag on Ag substrates was studied. The results show that there exists a transient plateau of the contact angle variation. Such a phenomenon can be explained by the intermetallic compound precursor halo formation preceding the edge of the solder drop.     

Photoconductive properties of organic-inorganic Ag/p-CuPc/n-GaAs/Ag cell

A thin film of copper phthalocyanine(CuPc),a p-type semiconductor,was deposited by thermal evaporation in vacuum on an n-type gallium arsenide(GaAs) single-crystal semiconductor substrate.Then semitransparent Ag thin film was deposited onto the CuPc film also by thermal evaporation to fabricate the Ag/p-CuPc /n-GaAs/Ag cell.Photoconduction of the cell was measured in photoresistive and photodiode modes of operation. It was observed that with an increase in illumination,the photoresistance decreased in reverse bias while it increased in forward bias.The photocurrent was increased in reverse bias operation.In forward bias operation with an increase in illumination,the photocurrent showed a different behavior depending on the voltage applied.     

Ag层的厚度对ZnO/Ag/ZnO多层膜性能的影响

采用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法制备了不同厚度Ag夹层的ZnO(60nm)/Ag/ZnO(60nm)多层膜.分别用X射线衍射仪、紫外可见分光光度计、四探针测试仪对样品的结构、光学性质、电学性质进行了研究.结果表明:随着Ag层厚度的增加,ZnO/Ag/ZnO多层膜呈现多晶结构,Ag(111)衍射峰的强度增强.Ag夹层厚度为11nm时,ZnO(60nm)/Ag/ZnO(60nm)膜在554nm处的透过率高达92.3%.随着Ag层厚度的增加,Ag膜的特征吸收峰呈现红移和宽化,ZnO/Ag/ZnO多层膜的面电阻先减小后趋于稳定.     

Ag层的厚度对ZnO/Ag/ZnO多层膜性能的影响

采用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法制备了不同厚度Ag夹层的ZnO(60nm)/Ag/ZnO(60nm)多层膜.分别用X射线衍射仪、紫外可见分光光度计、四探针测试仪对样品的结构、光学性质、电学性质进行了研究.结果表明:随着Ag层厚度的增加,ZnO/Ag/ZnO多层膜呈现多晶结构,Ag(111)衍射峰的强度增强.Ag夹层厚度为11nm时,ZnO(60nm)/Ag/ZnO(60nm)膜在554nm处的透过率高达92.3%.随着Ag层厚度的增加,Ag膜的特征吸收峰呈现红移和宽化,ZnO/Ag/ZnO多层膜的面电阻先减小后趋于稳定.     

Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes

In this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. The device, which is composed of a magnesium oxide (MgO) layer on an amorphous germanium (Ge) thin film, was characterized by means of temperature-dependent current (I)–voltage (V), room-temperature differential resistance (R)–voltage, and capacitance (C)–voltage characteristics. The device resonating signal was also tested and evaluated at 2.9 GHz. The I–V curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of ～1.1. The negative differential resistance region shifts toward lower biasing voltages as temperature increases. The true operational limit of the device was determined as 350 K. A novel response of the measured R–V and C–V to the incident alternating-current (ac) signal was observed at 300 K. Particularly, the response to a 100-MHz signal power ranging from the standard Bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. In addition, when the tunnel device was implanted as an amplifier for a 2.90-GHz resonating signal of the power of wireless local-area network (LAN) levels, signal gain of 80% with signal quality factor of 4.6 × 10⁴ was registered. These remarkable properties make devices based on MgO-Ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (CPU) clocks.     

Effect of Zn Addition on Interfacial Reactions Between Sn-4Ag Solder and Ag Substrates

In this study, the effect of Zn (Zn = 1 wt.%, 3 wt.%, and 7 wt.%) additions to Sn-4Ag solder reacting with Ag substrates was investigated under solid-state and liquid-state conditions. The composition and microstructure of the intermetallic compounds (IMCs) significantly changed due to the introduction of different Zn contents. In the case of Sn-4Ag solder with 1 wt.% Zn, a continuous Ag-Sn IMC layer formed on the Ag substrates; discontinuous Ag-Zn layers and Sn-rich regions formed on the Ag substrates under liquid-state conditions when the Sn-4Ag solders contained 3 wt.% and 7 wt.% Zn. If 3 wt.% Zn was added to Sn-4Ag solder, the Ag-Sn IMC would be transformed into a Ag-Zn IMC with increasing aging time. Rough interfaces between the IMCs and the Ag substrates were observed in Sn-4Ag-7Zn/Ag joints after reflowing at 260°C for 15 min; however, the interfaces between the IMCs and the Ag substrates became smooth for Sn-4Ag-1Zn/Ag and Sn-4Ag-3Zn/Ag joints. The nonparabolic growth mechanism of IMCs was probed in the Sn-4Ag-3Zn/Ag joints during liquid-state reaction, and can be attributed to the detachment of IMCs. On the other hand, the effect of gravity was also taken into account to explain the formation of IMCs at the three different interfaces (bottom, top, and vertical) during the reflow procedure.     

Environmental protection of inkjet-printed Ag conductors

Electrically conductive silver nanoparticle ink patterns were fabricated using the inkjet printing method. Two different polymer films were used as the substrate materials. The patterns were exposed to humidity and salt fog and the electrical performance (sheet resistance and RF performance) as well as mechanical endurance (adhesion) were measured before and after the environmental tests. The electrical properties of the printed structures remained good in all the measurable samples. The adhesion between the ink and a substrate material appeared to be a greater challenge in harsh environments. Protection capabilities of one dip coated and one hot laminated barrier materials were evaluated during the environmental tests. The results showed that there is a need for environmental protection in printed electronics. Especially the laminated barrier films can offer a potential solution for shielding printed electronics in harsh environments as they can provide good mechanical protection, and can easily be integrated in roll-to-roll process.     

Elastic and optoelectronic properties of novel Ag3AuSe2 and Ag3AuTe2 semiconductors

Ag₃AuSe₂ and Ag₃AuTe₂ are interesting class of semiconducting materials. Here, elastic and opto-electronic properties of Ag₃AuSe₂ and Ag₃AuTe₂ semiconductors are studied in detail using density functional theory. Different schemes are selected to treat the exchange-correlation effects. The unit cell of the compounds is fully optimized and calculated cell constants are found in agreement to the existing experimental data. The calculated elastic constants and elastic moduli reveal that the compounds possess ductile nature and are elastically stable. It is found that both compounds are direct bandgap semiconductor with bandgap value of 1.009 eV for Ag₃AuSe₂ and 0.551 eV for Ag₃AuTe₂. As the compounds have narrow and direct bandgaps, therefore optically active. The optical properties like reflectivity, absorption coefficient, energy loss function, refractive index including and complex dielectric function are studied in detail. The direct band gap nature of these compounds make them useful candidate for different devices applications.     

低银系无铅焊料

概述了低银系无铅焊料的开发和特性。     

Comparison of the agglomeration behavior of Ag(Al) films and Ag(Au) films

It is essential to suppress agglomeration of Ag films caused by thermal treatment for their successful application as new metallization materials. Co-sputtered Ag(Al) and Ag(Au) films were investigated, with regard to their change in morphology and electrical resistivity after vacuum annealing. As a result, agglomeration of the Ag(Al) film (Al: 4.3 at.%) was not recognized even after annealing at 600 °C. However, void formation followed by de-wetting was observed for the Ag(Au) film after annealing, similar to that for a pure Ag film. The morphological change was accompanied by an increase in the resistivity of the Ag(Au) films with annealing temperature. On the other hand, the resistivity of the Ag(Al) films did not increase by annealing at temperatures from 400 to 600 °C. However, the film with the highest Al content, which was most resistive to agglomeration, had too high resistivity for use as a metallization material. By analysis of the Auger depth profile, the presence of very thin oxide layers at the surface of the film and at the interface with the substrate was confirmed for Ag(Al) films after annealing. This was considered to be the reason for the large difference in agglomeration behavior between the Ag(Au) and Ag(Al) films.