Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices

In this work we compare the performance of Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy for the characterization of doping profiles in semiconductor devices. Particular attention is devoted to parameters of paramount importance for the failure analysis and the characterization of silicon devices, like the quantitative one-dimensional profiling accuracy, the electrical junction delineation and the two-dimensional sub-micron imaging capability.     

Evaluation of the bonded silicon on insulator (SOI) wafer and thecharacteristics of PIN photodiodes on the bonded SOI wafer

Electrical properties of the bonded silicon on insulator (SOI) wafer and characteristics of PIN photodiodes fabricated on the SOI layer were evaluated. A trap with deep energy level (about Ec-Et=0.55 eV) was observed in the SOI layer with 100 μm- and 30 μm-thickness using the deep level transient spectroscopy (DLTS) method. No trap was detected in the SOI layer with 10 μm-thickness. This deep trap was not observed before the wafer bonding process and thus the trap is generated during the wafer bonding process. From primary mode lifetime (τ₁) measurements, it is considered that the trap will works as the generation center or the recombination center. For PIN photodiodes on the SOI layer in which the trap was detected, the increases of dark current were observed. Spectral responses of photodiodes on the SOI layer were almost the same as that on the normal FZ-Si wafer. We fabricated PIN photodiodes with good spectral response     

An anomalous device degradation of SOI narrow width devices causedby STI edge influence

The effects of shallow trench isolation (STI) on silicon-on-insulator (SOI) devices are investigated for various device sizes with three different gate shapes. Both NMOSFETs and PMOSFETs with the channel region butted to the STI show a reduction in mobility (NMOSFETs and PMOSFETs) and an increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI-butted channel region show much less variation in mobility for various channel widths. The degradation of MOSFET yield in SOI MOSFETs with the STI is found to be dependent on the device width since the contribution of the interface roughness (or damage) between the STI and the channel formed during the dry etch process becomes significant with the decrease of channel width and the increase of channel length. From the charge-pumping results, the interface state (N_it) generated by the STI process was identified as the cause of the anomalous degradation     

扫描探针显微术及其在纳米科技中的应用

综述了近二十年来以扫描隧道显微镜为代表的、基于探针的成像显微装置基本原理及应用领域。     

High speed SOI CMOS image sensor with pinned photodiode on handle wafer

We have fabricated SOI CMOS active pixel image sensor with pinned photodiode on handle wafer. The structure of one pixel is a four-transistor type active pixel image sensor, which consists of a reset and a source follower transistor on seed wafer, and is comprised of a photodiode, a transfer gate, and a floating diffusion on handle wafer. The photodiode could be optimized for better quantum efficiency and low dark currents because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. Most of the wavelengths are absorbed within the visible range, because the optimized photodiode is located on the handle wafer. The response time of SOI CMOS active pixel sensor was about 2 times faster than that of bulk CMOS active pixel image sensor.     

扫描近场光学显微镜及其在生物微结构探测上的应用

扫描近场光学显微镜（ＳＮＯＭ）可探测生物体亚波长水平的光学特性，以接近分子水平的分辨率在生物微结构成象、探测和修饰等多方面有巨大的潜力。本文对ＳＮＯＭ的技术方法及其近期的的生物学应用进行了介绍。     

基于等效电容法对SOI器件自加热效应研究

针对目前常规SOI器件高温特性存在的问题,提出了采用等效电容法分析器件自加热效应的新观点,对抑制自加热效应原理进行了新的解析,根据埋层材料的介电常数不同,按等效电容法进行埋层厚度折算。在此基础上,提出了SOI器件的埋层新结构,并从介电常数的角度较好地验证了提出观点的正确性。最后得到,高介电常数等效埋层厚度的减小利于热泄散,高热导率的埋层材料提高了导热能力,在双重因素作用下有效抑制了自加热效应。     

Application of analogue self-electro-optic effect device with fiveinput photodetectors to edge detection

A second order two-dimensional spatial image differentiation has been performed using an analogue self-electro-optic effect device (SEED). The device integrates a pair of quantum-well modulators with a set of five conventional photodiodes designed to extract local spatial differentiation. The result shows that this device is suitable for studying early vision processes     

Fabrication and test of an electromagnetic vibrating ring gyroscope based on SOI wafer

Mode matching is tile key to improve the performance of micro-Inachined vibrating ring gyroscopes. Mass and stiffness asymmetries can lend to normal modes badly mismatch for gyroscopes fabricated by single-crystal silicon. The mismatch of the normal nodes results in large normal mode frequency split and degraded sensitivity. To address this issue, a Silicon-On-Insulator （SOI） wafer is used to fabricate the sensor chips. Meanwhile, a compensate disk and the backside coated negative photo resist （AZ303） is employed to weaken the Lag and Footing effect during the Deep Reactive Ion Etching （DRIE） process. Test results reveal that frequency split between the normal modes is of less than 10 Hz before the following electronic tuning. Thus, the mode matching of the electromagnetic vibrating ring gyroscope is probable to be realized.     

扫描近场光学显微镜在生物学领域的应用

介绍了近期扫描近场光学显微镜（SNOM）在单分子探测、细胞精细结构和微生物学等研究领域中的应用进展,介绍了“量子荧光探针”、“生物纳米光学”的概念,指出了SNOM在细胞内部或膜表面进行单分子探测与单分子量化研究中的难题,并提出将其与超薄切片相结合以解决这些难题的思路。SNOM在各个领域的应用研究还远远不足,需要做更多的工作,其成像原理及图像数据的解析还需作深入研究。     

激光共聚焦显微镜在磨损表面粗糙度表征中的应用

磨损是材料常见的表面失效现象,粗糙度是数字化描述材料磨损表面形貌特征的最常用参数.采用激光共聚焦显微镜(LSCM),通过调节物镜倍率、测量视场和过滤参数等,能够得到材料磨损表面的真实形貌,同时能够对磨损表面三维(3D)形貌特征进行精确数字化描述.对常见的粗糙度值0.5～2.0μm磨损表面采用20×物镜扫描测量比较合适;粗糙度小于0.5μm的磨损表面宜采用50×物镜;粗糙度大于2.5μm宜采用10×物镜.对比较规则的磨损表面,采用1～3个物镜视场叠加扫描即可得到比较精确的粗糙度值;对于不太规则的磨损表面,则需要3～5个物镜视场叠加扫描.借助这一手段,采用上述优化参数对Cr5冷轧辊材料磨损各阶段试样表面形貌及粗糙度轮廓曲线进行表征、分析,效果较好.     

Influence of device geometry on SOI single-hole transistor characteristics

SOI single-hole transistors have been fabricated by intentionally converting a quantum wire to an island connected to source and drain by two narrow constrictions. Two devices with different constriction lengths were investigated. It is found that slight differences in constriction lengths can lead to dramatic differences in device characteristics. For the device with short constrictions, periodic Coulomb oscillations are obtained and persist at temperatures in excess of 100 K. The physical origin of the tunnel barriers of the device has been analyzed experimentally and investigated theoretically based on the self-consistent numerical results of the Schrödinger and Poisson equations. The result indicates that lower ground-state energy for holes in the narrow constrictions serves as a potential barrier responsible for the periodic Coulomb oscillations. For the device with longer constrictions, aperiodic drain current oscillations are observed. The analysis of the experimental results shows that the quantum wire connecting source and drain is converted into at least three islands, probably due to the pattern-dependent oxidation effect. Consequently, the charging energy combined with the quantum confinement energy for the smallest island gives rise to aperiodic drain current oscillations.     

家兔黄体的扫描电镜观察

本文用二甲基亚砜冷冻割断法对兔非妊娠性黄体进行了扫描电镜观察。发现黄体细胞多排列成索,索间有窦状毛细血管。在被割断的黄体细胞内可见圆形核,其核孔及核内染色质纤维与核仁的纤维部与颗粒部均可清晰地显示出来。胞质内含有大量滑面内质网(SER)。线粒体嵴呈管泡状。高尔基复合体形态多样立体感特强,在一个细胞内可见多个高尔基体网的不同面,并可见有不同粗细的小管与远处的小泡相连。此外还发现由SER和RER的扁平池所形成的轮纹结构。在上述膜性结构之间尤可见有由微丝,微管交织成网的细胞支架,其末端可附于膜上。值得注意的是在细胞间隙中除可见有以细茎与胞膜相连的球状突起外,尚有许多大小不一的泡状结构,最大的可达4μm,其膜可局部塌陷,如膜破裂,可见其中含有由多个小泡相连而成的串珠样结构,并可见串珠由泡内移出的图象。血窦内皮含核部突向腔内,在内皮细胞之间的间隙处和窦周间隙内,亦可见有小圆形颗粒。根据观察所见结合文献资料对黄体细胞的超微结构及其分泌方式进行了讨论。     

激光单条扫描定域再结晶SOI技术研究

本文描述了用于制作三维集成电路（３Ｄ－ＩＣ）的激光再结晶工艺的实验装置和工艺过程，报道了反射条结构样品的单条扫描定域再结晶的实验结果并作了相应的讨论，实验表明，再结晶质量与激光功率、预热温度、高反区条宽以及激光扫描速率等因素有关，并受到工艺稳定性的影响；利用激光单条扫描定域再结晶技术已获得１２ｕｍ宽度、芯片长度的能用以制作高性能ＭＯＳＦＥＴ的ＳＯＩ单晶条。     

Impact of device physics on DG and SOI MOSFET linearity

The influence of different physical mechanisms on MOSFET linearity is analyzed using 2D TCAD device simulations. In particular, the RF linearity performance of 50 nm gate length SOI and DG-MOSFETs are investigated and compared with traditional bulk MOSFETs. We employ the hydrodynamic (HD) transport model to account for non-equilibrium carrier dynamics and the density gradient approximation for quantum mechanical effects. Impact ionization of channel carriers and self-heating effect (SHE) are also accounted for in the thin-body devices. Our results disclose the relationship between various aspects of device physics and linearity. We show that linearity performance is particularly sensitive to non-local effects and are lowered due to SHE. Quantum mechanical effects appear to have a small positive impact on linearity. Drift-diffusion approximation is found to be unreliable for linearity analysis of DG MOSFETs due to large overestimation from this model. We also observe that linearity has an anomalous monotonous dependence on the ambient temperature.     

模式识别在半导体器件封装中的应用

主要介绍了半导体器件封装SOT-23中所用的基本的模式识别技术-模板匹配法.以及模式识别的基本概念和一般框图、SOT-23半导体封装的流程.通过对基本知识的介绍以期能够找到这两种技术的结合点,并介绍了我国目前半导体工业的现状.