Selective electroless plating-A new technique for GaAs MMICs

A simple, cost-effective processing technique, selective electroless plating, is proposed for GaAs monolithic microwave integrated circuits (MMICs). Microwave measurements show that the attenuation properties of transmission lines fabricated by this processing technique are comparable to the attenuation properties of lines fabricated by the traditional evaporation lift-off technique     

A new refractory self-aligned gate technology for GaAs microwavepower FETs and MMICs

The authors fabricated GaAs power FETs and microwave ICs using a novel fully planar, refractory self-aligned gate process. This process uses methods to reduce the gate resistance and output conductance without sacrificing simplicity. Because it is compatible with the use of an optical stepper, the process is suitable for manufacturing use. The C-band RF performance is excellent; the very uniform and reproducible device parameters resulted in a first-iteration 2.5-W C -band power amplifier that met design specifications on the first lot of wafers processed     

GaAs MMIC用无源元件的模型

制作了不同结构参数的GaAs MMIC无源元件,包括矩形螺旋电感、MIM电容和薄膜电阻,建立了无源元件的等效电路模型库,采用多项式公式表征无源元件的模型参数和性能参数,便于电路设计的应用.并提取得到MIM电容的单位面积电容值,约为195pF/mm2,NiCr薄膜电阻的方块电阻约为16.1Ω/□.分析结构参数对螺旋电感性能的影响可知,减小线圈面积相关的寄生损耗有助于获得高品质的电感.     

GaAs MMIC用无源元件的模型

制作了不同结构参数的GaAs MMIC无源元件,包括矩形螺旋电感、MIM电容和薄膜电阻,建立了无源元件的等效电路模型库,采用多项式公式表征无源元件的模型参数和性能参数,便于电路设计的应用.并提取得到MIM电容的单位面积电容值,约为195pF/mm2,NiCr薄膜电阻的方块电阻约为16.1Ω/□.分析结构参数对螺旋电感性能的影响可知,减小线圈面积相关的寄生损耗有助于获得高品质的电感.     

一款Ku 波段GaAs PHEMT 低噪声放大器

面向微波毫米波低噪声放大电路对高性能低噪声放大器件的需求,进行0. 15 μm 栅长GaAs PHEMT低噪声器件制备工艺的开发,在制备工艺中采用了欧姆特性优异的复合帽层欧姆接触、低寄生电容的介质空洞栅结构以及高击穿电压的双槽结构。在此基础上实现了一款性能优异的Ku 波段低噪声放大电路,电路在Ku 频段全频带(14 ~18 GHz)内实现了优良的性能,其噪声系数小于1. 3 dB,增益大于17 dB。电路采用5 V 电源供电,功耗为250 mW,芯片面积为2 mm×1. 6 mm;这款性能优异的Ku 频段低噪声放大器特别适用于高信噪比要求的卫星通信等应用。     

GaAs MMIC应用展望

ＧａＡｓ　ＭＭＩＣ应用展望本刊主编林金庭中图分类号：ＴＮ４５４ＰｅｒｓｐｅｃｔｉｖｅｏｆＧａＡｓＭＭＩＣｓＡｐｐｌｉｃａｔｉｏｎ￥ＬｉｎＪｉｎｔｉｎｇ１９９０年以前，砷化镓（ＧａＡｓ）技术的８０％是用于军事，随着冷战结束，高性能的ＧａＡｓＩＣ向何处去...     

超低功耗GaAs PHEMT跨阻前置放大器

本文报导了光纤通信接收机中GaAs PHEMT工艺前置放大器的设计方法与测试结果。此前置放大器采用单电源供电，由1级放大、2级源级跟随器和1个反馈电阻组成。当前置放大器工作在2.5Gbit/s时，跨阻可达60dB Ω。采用 5V电源供电，功耗为110mW。     

Wavemaker in the design of GaAs MMICs

WaveMaker started out as a GaAs MMIC layout editing software package, to which was added a layout capture and schematic capture facility to enable the user to create netlist files in the Touchstone and Super Compact. The next step was to add the circuit simulator, and this has recently been completed with version 3.0 of WaveMaker.     

MIM capacitor fabrication and assessment for GaAs MMICs

Metal-insulator-metal, MIM, capacitors have been fabricated using plasma deposited silicon nitride, SiN_x, films deposited under varying deposition conditions. The electrical properties of the MIM capacitors and the corresponding physical properties of the SiN_x films have been determined. The breakdown field strength of the films, which varied between 0.4–3.0 MVcm⁻¹, has been related to the amount of hydrogen incorporated in the SiN_x layers during deposition. Frenkel-Poole conduction through the silicon nitride has been observed at room temperature and this conduction mechanism is shown to be predominant and independent of the breakdown field strength, for the films investigated.     

DC-40 GHz光通信系统用GaAs PHEMT驱动放大器。

利用0.2μmGaAsPHEMT工艺研制了40Gb/s光通信系统中的光调制器驱动放大器。该放大器芯片采用有源偏置的七级分布放大器结构,工作带宽达到40GHz,输入输出反射损耗约-10dB,功率增益14dB,功耗700mW,最大电压输出幅度达到7V。两级芯片级连后,功率增益约27dB,在40Gbit/s速率下得到清晰的眼图。     

宽带GaAs PHEMT VCO设计

分析了宽带VCO的设计原理,阐明了设计步骤,采用双变容二极管的新型结构设计了2～4GHz、4～7GHz、7～12GHz和12～18GHz四个宽带GaAsVCO芯片以完全覆盖2～18GHz频段。仿真结果表明本文设计的VCO具有频带宽、负载牵引小、结构简单的特点,有很好的应用价值。     

塑封GaAs MMIC的失效机理及典型案例

阐述了塑封GaAs MMIC的主要失效模式和失效机理,根据40余例实际案例,得出了其使用中的失效机理分布,并给出几例典型的失效分析案例.     

Schottky diodes for analogue phase shifters in GaAs MMICs

A simple Schottky diode structure, which is easily implemented in a foundry gallium arsenide (GaAs) process, is described. This structure occupies very much less area than the usual technique of realising Schottky diodes, using standard FET structures. Two variations of the diode have been characterized and modeled using a standard equivalent circuit. This has been used to design a simple analogue phase shifter based on a loaded-line configuration. The phase shifter was manufactured using a standard foundry process and has shown excellent results in terms of phase shift linearity with tuning voltage, combined with low insertion loss, over the range 2-8 GHz     

High reliability in PHEMT MMICs with dual-etch-stop AlAs layers for high-speed RF switch applications

We have conducted a thorough investigation on the long-term process reliability for our recently developed dual-etch-stop (DES) pseudomorphic high electron mobility transistor (PHEMT) process using the on-wafer-level accelerated DC and RF biased step stress test up to 320 °C channel temperature as well as package-level three-temperature constant stress lifetest. Devices studied are 0.9-μm-gate InGaAs PHEMTs with two silicon-doped AlAs layers as gate and channel etch-stop materials. High-temperature-operating-life (HTOL) test on our single-pole-double-throw (SPDT) switch products using this DES PHEMT process has also been performed. This article describes the detailed reliability experiments and compares the reliability results of this new DES PHEMT process against the standard non-etch-stop (NES) PHEMT baseline material. Extensive statistical analyses on the DES PHEMT devices derived an activation energy E_a=1.4 eV and a mean-time-to-failure (MTTF) > 10⁷ h at 125 °C, an order of magnitude better than our baseline NES PHEMTs. This study demonstrates and discusses the excellent reliability in the DES PHEMT process for wireless communications applications.     

Via holes for GaAs MMICs fabricated using reactive ion etching

A dry etching process has been employed in the successful fabrication of through-substrate via holes for GaAs MMICs. The etching was carried out using Freon 12 (CCl2F2) as the etching gas. These vias have been shown to have low loss up to 12GHz.     

一种GaAs PHEMT器件的失效分析

随着Ga As PHEMT(赝配高电子迁移率晶体管)器件的广泛应用,器件的可靠性及失效分析方法越来越受到人们的重视。该文采用半导体参数分析仪、聚焦离子束(FIB)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、能谱仪(EDX)等分析方法对一种PHEMT器件进行失效分析,为实际生产和加工过程中的失效分析提供了参考。     

GaAs MMIC可靠性研究与进展

介绍了GaAs器件及MMIC的可靠性研究现状 ,给出了GaAs器件的几种失效模式和失效机理     

用于移动通信的砷化镓高频PHEMT小功率晶体管

砷化镓PHEMT功率器件具有工作频率高，输出功率密度大，效率高，功率增益高等特点，我们研制的0．5μm栅长GaAsPHEMT小功率晶体管，栅宽1mm，直流跨导250ms/mm，栅漏反向击穿电压大于13V，在20GHz下最大可用增益为8dB，X波段输出功率为0．8W／mm，可应用于22GHz以下的窄带功率放大器和18GHz以下的宽带功率放大器。     

GaAs MMICs offer space and cost reductions for handheld telephones

The use of GaAs monolithic microwave integrated circuits (MMICs) for the power amplifier in portable telephones is a quantum leap in terms of technology and it affords major benefits in return especially for handheld applications. Mitsubishi has led the way in the use of MMICs and of the four current suppliers of handheld analogue telephones to the NTT telecom body in Japan, Mitsubishi is the only company using GaAs MMICs for the power amplifier in its telephones, of which it is currently producing 20 000 to 30 000 per month.