高亮度LED调光技术

高亮度发光二极管(HB LED)在各种领域应用普及.并要求HB LED具备有调光功能.在现有的几种调光技术中,从简单的可变电阻负载到复杂的脉冲宽度调制(PWM)开关,每一种方法均有其利弊.PWM调光的效率最高,电流控制也最精准.论述了HB LED在调光时的特性,介绍了LM3405评估板及其功能.包括其布局、原理图和元件清单.     

Accelerated life test of high power white light emitting diodes based on package failure mechanisms

Accelerated life tests of high-power white light emitting diodes (LEDs) were conducted under an unbiased highly accelerated temperature and humidity test (HAST) and a normal aging test. The conditions in the unbiased HAST were 110 °C-85% RH, 130 °C-85% RH without bias. During the aging, the degradation mechanisms of optical power reduction and degradation of 455 mm blue wavelengths that were better than phosphors related yellow emission bands were observed. The microscopy analysis showed that this effect could be ascribed to the bubbling and discoloration of the silicone encapsulating material of the package. It is thought that these features are also responsible for the optical power reduction and thermal resistance increase.     

Materials for light emitting diodes

III–V semiconductor display diodes fall into three material categories: direct, indirect, and diode-phosphor combinations. The light generation mechanisms are well understood in each case. On the basis of the luminous efficacy achieved in the laboratory, the merit of the various materials is in the order: GaP: N (green), GaP: Zn, O (red), GaInP (yellow), GaAsP (red), GaAlAs (red) and GaAs-phosphor combinations (red, green, blue). A more comprehensive assessment of quality must take into account factors such as the economic feasibility of the methods of synthesis, the applicability to monolithic arrays, and the suitability of spectra (hue, contrast, saturation, etc.). The degree of importance of these matters and the limitations of the various materials are less well-defined at present. New developments which may have an impact on the future of display diodes include the use of Al_xGa_1-xP in place of GaP to shift spectra to shorter wavelengths, the possible development of very bright direct alloys of InP with either GaP or A1P, and the doping of GaAsP with N to extend its range of colors.     

High-brightness AlGaInP light emitting diodes

First commercially introduced in 1990, AlGaInP light emitting diodes (LEDs) currently are the highest (luminous) efficiency visible solid-state emitters produced to date in the red through yellow spectral regime. The attainment of this high-efficiency performance is a result of the development of advanced metalorganic chemical vapor deposition crystal growth techniques, which have facilitated the high-quality growth of this quaternary alloy as well as the implementation of complex device designs. Furthermore, the highest efficiency family of AlGaInP devices (based upon a transparent-substrate platform and commercially introduced in 1994) have been realized as result of the development and implementation of direct compound semiconductor wafer bonding technology. As a result, the luminous efficiency of AlGaInP LEDs exceeds or rivals that of unfiltered incandescent lamps and other conventional lighting sources. Further improvements in these techniques (and the realization of efficient, high-power LEDs) are expected to make AlGaInP LEDs even more competitive with conventional lamp technology, thus enhancing the position of LED's in many applications as a preferred lighting source     

高p型掺杂对高亮度发光二极管的作用

根据统计学理论系统分析了p掺杂在高亮度发光二极管中(HB-LED)的作用,研究了p型限制层掺杂浓度及浓度梯度变化时导带势垒的变化,由此得到对提高电子有效约束的浓度范围;提高电流扩展层的掺杂浓度,减小电阻率,使得注入器件的电流得到充分的扩展.两者是提高器件的外量子效率非常有效的方法.实验证明了理论分析是正确的.     

Reliability of InGaAsP light emitting diodes at high current density

InGaAsP LED's emitting at 1.3 µm are attractive sources for long distance transmission systems. These devices have been shown to have excellent reliability at 8 kA/cm². In order to launch more power into the optical fiber it is desirable to operate at the highest possible current densities consistent with system reliability requirements. In this work, the high temperature aging behavior of these LED's has been studied at current densities from 20 to 40 kA/². Both the standard LED structure, where the small diameter p-contact is isolated with a dielectric layer, and a structure in which a Schottky barrier is used for isolation are examined. Dark spot defect (DSD) formation is greatly enhanced at these high current densities in devices with dielectric isolation, limiting MTTF atT_{J} = 70degC to 2 times 10^{5}h. In contrast, devices with Schottky-barrier isolation remain essentially free of DSD's and haveMTTF > 10^{7}h at 70°C. These results suggest that stress from the dielectric layer promotes the growth of DSD's. Schottky-barrier devices in which the dielectric layer is eliminated are, thus, better suited for high current-density operation.     

大功率LED无线光通信的高速脉冲调制技术研究

研究了大功率蓝光LED的光电脉冲响应特性,分析了影响其响应速度的因素,采用小电流负载高速门器件提供脉冲上升沿瞬时过压和下降沿的载流子泄放,实现了LED的光响应加速。利用该方法设计了大电流输出的脉冲调制电路,驱动3W蓝光LED并使其光调制速率提升至4MHz,输出峰值电流达到约800mA。     

发光二极管表面结构对出光特性的影响

用传输矩阵法模拟计算了AlGaInP发光二极管(LED)不同表面结构的光学特性,用等离子体增强化学气相沉积(PECVD)或磁控溅射掺铟氧化锡(ITO)设备,在带有DBR结构的外延衬底上制备出具有不同表面层结构的LED.通过实验结果对比表明,表面生长λ/4n SiON加λ2n ITO增透膜结构复合增透膜的LED,器件光学性能提高最佳,在20 mA注入电流下,光强和光通量分别达到141.7 mcd和0.4733 lm.比同样结构的无增透膜LED轴向光强和光通量分别提高138%和91%.     

Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness

The light output and electrical characteristics of GaN-based vertical light emitting diodes were investigated as a function of n-GaN thickness. The forward voltage increases from 3.34 to 3.42 V at an injection current of 350 mA as the n-GaN thickness decreases from 5.0 to 2.0 μm. Even at a high injection current of 2.0 A, LEDs with 2.0 μm-thick n-GaN reveal stable forward characteristics which are comparable to those of LEDs with 5.0 μm-thick n-GaN. All the samples exhibit almost the same reverse current up to approximately −8 V. The output power increases with decreasing n-GaN layer thickness. For example, LEDs with 2.0 μm-thick n-GaN yield about 12% higher light output power as compared to LEDs with 5.0 μm-thick n-GaN. Their light output power continuously increases without saturation as the injection current increases up to 1 A. The n-GaN thickness dependence of the electrical characteristics is described and discussed.     

Red hot [light emitting diodes]

Light-emitting diodes are ubiquitous in today's high-tech world. But no matter what their application or color, their origin can be traced to the red LED created in 1962 by Nick Holonyak Jr., the winner of this year's IEEE Medal of Honor. The article describes Holonyak's career and the work which produced the first LED, and shows how his influence permeates the industry today.     

Degradation of AlGaN-based ultraviolet light emitting diodes

Aging the LEDs by driving at high current, results in the decrease of optical power proportional to the reciprocal square route of stress time. With aging time, change in the current–voltage characteristics indicates decrease of the current at low voltage below the light emission threshold, decrease of the forward voltage drop at high currents and usually no change in the series resistance. No change in the peak wavelength and half bandwidth were found with aging. Low frequency noise measured at low and high currents either did not depend on aging time or decreased. No correlation between noise, the device power, and the rate of the power degradation were found. These results are in strong contrast to previous studies of longer wavelength GaN-based LEDs. The possible degradation mechanism is the diffusion of the Al atoms out from the p-type cladding layer and lowering of the cladding layer potential barrier as a result.     

具有纳米级结构出光面的AlGaInP基发光二极管

研究了一种利用金属自组装纳米掩膜和ICP刻蚀对AlGaInP基发光二极管(LED)表面进行粗化的技术,使光输出得到了提高.粗化了的AlGaInP基LED比常规的AlGaInP基LED,光强提高了27%,光功率提高了12.6%,实验结果具有可重复性.可以进一步优化Au颗粒的周期和分散程度,提高AlGaInP基LED的提取效率.     

MOCVD生长双波长发光二极管

根据白光照明和可变换波长的光通信中对单芯片双波长发光二极管(LED)要求,在分析了反向偏置隧道结性质的基础上,设计了用反向偏置隧道结连接两个有源区的单芯片双波长LED,用金属有机化学气相沉积技术(MOCVD)在GaAs衬底上一次外延生长了同时发射两种波长的LED,其包含一个AlGaInP量子阱有源区和一个GaInP量子阱有源区,两个有源区由隧道结连接;通过后工艺制备了双波长LED器件,在20mA电流注入下,可以同时发射626nm和639nm两种波长,光强是127mcd,正向电压是4.17V。与传统的单有源区LED进行对比表明,双波长LED有较强的光强;对比单有源区LED的2.08V正向电压,考虑到双波长LED包含隧道结和两个有源区,隧道结上的压降很小。     

Gravure printed flexible small-molecule organic light emitting diodes

Small-molecule based flexible organic light-emitting diodes (SMOLEDs) were fabricated by gravure printing. In order to modify rheological properties of the functional ink, the green emitter was embedded into an ultrahigh molecular weight polystyrene (UHMW-PS) matrix. The viscosity of the ink was characterized as a function of the small molecule:UHMW-PS weight ratio and solvent type. The gravure printed SMOLEDs exhibited a maximum luminance of 850 cd m⁻², a maximum efficiency of up to 7.7 cd A⁻¹, and turn on voltage of ∼3.5 V. The gravure printed SM:UHMW-PS device exhibits ∼67% higher luminance efficiency comparing to the spin-coated pristine SM device.     

Semi-insulating selective regrowth of surface light emitting diodes

Selective regrowth of indium phosphide (InP) using organometallic vapor phase epitaxy (OMVPE) on a circular shaped mesa has been demonstrated for the first time. Inclusion of an interfacial layer of indium gallium arsenide phosphide between the circular dielectric mask and the underlying material produces a favorable smooth mesa profile by controlling the level of undercut during mesa etching. This combination of profile and undercut was found to be critical for successful selective regrowth and planarization. To the best of our knowledge, this is the first time that a surface light emitting diode has been demonstrated with a selective OMVPE semi-insulating regrowth. The semi-insulating InP layer reduces parasitic capacitance and improves the heat dissipation out of the device. These salient features make these devices suitable for high speed digital and analog communication applications.     

All-solution-processed multilayer polymer/dendrimer light emitting diodes

A fully solution-processed deep-blue emitting organic light emitting diode (OLED) based on a highly efficient fluorescent dendritic material with a pyrene core, a phenylene shell and triphenylamine surface groups coupled with polymeric hole (HTL) and electron (ETL) transport layers is demonstrated. Each layer formed smooth and pinhole-free films as demonstrated by Atomic Force Microscopy (AFM) as well as by X-ray Photoelectron Spectroscopy (XPS). Furthermore, detailed Ultraviolet Photoelectron Spectroscopy (UPS) surveys revealed a beneficial energy level alignment and hence improved charge carrier confinement. The resulting triple-layer device saw a 7.7-fold increase in current efficiency compared to a single-layer device while maintaining a deep-blue emission color characterized by the CIE1931 coordinates of x = 0.153 and y = 0.155.     

Ultraviolet light emitting diodes using III-N quantum dots

(Al,Ga)N-based quantum dots (QDs) grown on Al_0.5Ga_0.5N by molecular beam epitaxy have been studied as the active region for the fabrication of ultra-violet (UV) light emitting diodes (LEDs). In the first part, using both “polar” (0001) and “semipolar” (112¯2) surface orientations, the structural and optical properties of different QD structures are investigated and compared. In particular, their propensity to get an emission in the UV range is analyzed in correlation with the influence of the internal electric field on their optical properties. In a second part, (0001) and (112¯2)-oriented LEDs using GaN/Al_0.5Ga_0.5N QD as active regions have been fabricated. Their main current-voltage characteristics and electroluminescence properties are discussed, with a focus on the LED emission wavelength range reached for both surface orientations: it is shown that a large part of the UV-A region can be covered, with longer wavelengths-from 415 to 360 nm-for the “polar” LEDs, and shorter ones-from 345 to 325 nm-for the “semipolar” LEDs. In addition, the influence of the internal electric field on the QD-LEDs working operation is shown.     

Heat transfer and residual stress modeling of a diamond film heat sink for high power laser diodes

A three-dimensional finite element model of heat transfer and residual stress within high power laser diodes and their heat sinks is developed. These components are typically used in telecommunication applications. The model addresses both p-side down and p-side up laser diodes mounted on a variety of commercially available gold plated diamond heat sinks. In addition, the model is optimized with respect to the dimensions of the diamond film, and the laser diode cavity lengths. Finally, the design and performance of diamond film heat sinks for high performance GaAs and InP laser diodes are discussed. The results demonstrate the superior performance achieved through thermal engineering of the dominant thermal transport path from the laser diode heat source through diamond films to the heat sink.     

Ⅲ族氮化物基发光二极管制造工艺

Ⅲ族氮化物是近年来半导体发光器件研究领域中的热点。由于InN,GaN,AlN及由其组成的连续变化固溶体合金所构成的半导体微结构材料,具有宽禁带宽电子漂移饱和速度高、介电常数小及导热性能好等特点,使其在制作短波长、高亮度的发光器件方面具有极其光明的前景。本文系统介绍了以氮化镓为代表的Ⅲ族氮化物基发光二极管的制造工艺。从工作原理、材料生长、掺杂和欧姆接触等各方面,介绍了各种氮化物二极管的不同器件结构和制造工艺。在介绍国际上最新制造技术的同时,对其发展前景做出了展望。