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1.
The interfacial reactions between In49Sn solders and Ag thick films at temperatures ranging from 200°C to 350°C have been studied. The intermetallic compound formed at the Ag/In49Sn interface is Ag2In enveloped in a thin layer of AgIn2. Through the measurement of the thickness decrease of Ag thick films, it has been determined that the reaction kinetics of Ag2In has a linear relation to reaction time. Morphology observations indicated that the linear reaction of Ag2In was caused by the floating of Ag2In into the In49Sn solder as a result of the In49Sn solder penetrating into the porous Ag thick film. A sound joint can be obtained when a sufficient thickness of the Ag thick film (over 19.5 μm) reacts with the In49Sn solder. In this case, the tensile tested specimens fracture in the In49Sn matrix.  相似文献   

2.
The morphology and growth kinetics of intermetallic compounds formed during the reaction of liquid In 10Ag on Ag substrates in the temperature range between 250°C and 375°C are studied. The results indicate that the Ag2In intermetallic compounds that appear at the interface are in the columnar shape, enveloped by thin AgIn2 shells. The growth kinetics of intermetallic compounds are parabolic, indicating that the reaction is diffusion-controlled. The Arrhenius reaction activation energy was found to be 44.9 kJ/mol. Also, the wetting behavior of the In10Ag on Ag substrates was studied. The results show that there exists a transient plateau of the contact angle variation. Such a phenomenon can be explained by the intermetallic compound precursor halo formation preceding the edge of the solder drop.  相似文献   

3.
The intermetallic compounds formed during the reflow and aging of Sn-20In-2.8Ag ball-grid-array (BGA) packages are investigated. After reflow, a large number of cubic-shaped AuIn2 intermetallics accompanied by Ag2In precipitates appear in the solder matrix, while a Ni(Sn0.72Ni0.28)2 intermetallic layer is formed at the solder/pad interface. With further aging at 100°C, many voids can be observed in the solder matrix and at the solder/pad interface. The continuous distribution of voids at the interface of specimens after prolonged aging at 100°C causes their bonding strength to decrease from 5.03 N (as reflowed) to about 3.50 N. Aging at 150°C induces many column-shaped (Cu0.74Ni0.26)6(Sn0.92In0.08)5 intermetallic compounds to grow rapidly and expand from the solder/pad interface into the solder matrix. The high microhardness of these intermetallic columns causes the bonding strength of the Sn-20In-2.8Ag BGA solder joints to increase to 5.68 N after aging at 150°C for 500 h.  相似文献   

4.
The intermetallic compounds formed at the interfaces between In-49Sn solder balls and Au/Ni/Cu pads during the reflow of In-49Sn solder, ball-grid array (BGA) packages are investigated. Various temperature profiles with peak temperatures ranging from 140°C to 220°C and melting times ranging from 45 sec to 170 sec are plotted for the reflow processes. At peak temperatures below 170°C, a continuous double layer of intermetallics can be observed, showing a composition of Au(In,Ni)2/Au(In,Ni). Through selective etching of the In-49Sn solders, the intermetallic layer is made up of irregular coarse grains. In contrast, a number of cubic-shaped AuIn2 intermetallic compounds appear at the interfaces and migrate toward the upper domes of In-49Sn solder balls after reflow at peak temperatures above 200°C for longer melting times. The upward floating of the AuIn2 cubes can be explained by a thermomigration effect caused by the temperature gradient present in the liquid solder ball. The intermetallic compounds formed under various reflow conditions in this study exhibit different types of morphology, yet the ball shear strengths of the solder joints in the In-49Sn BGA packages remain unaffected.  相似文献   

5.
During the reflow process of Sn-3.5Ag solder ball grid array (BGA) packages with Ag/Cu and Au/Ni/Cu pads, Ag and Au thin films dissolve rapidly into the liquid solder, and the Cu and Ni layers react with the Sn-3.5Ag solder to form Cu6Sn5 and Ni3Sn4 intermetallic compounds at the solder/pad interfaces, respectively. The Cu6Sn5 intermetallic compounds also appear as clusters in the solder matrix of Ag surface-finished packages accompanied by Ag3Sn dispersions. In the solder matrix of Au/Ni surface-finished specimens, Ag3Sn and AuSn4 intermetallics can be observed, and their coarsening coincides progressively with the aging process. The interfacial Cu6Sn5 and Ni3Sn4 intermetallic layers grow by a diffusion-controlled mechanism after aging at 100 and 150°C. Ball shear strengths of the reflowed Sn-3.5Ag packages with both surface finishes are similar, displaying the same degradation tendencies as a result of the aging effect.  相似文献   

6.
The effect of electric current on the Sn/Ag interfacial reaction was studied at 140°C and 200°C, by examining the growth of phase (ε-Ag3Sn) in the Sn/Ag reaction couples with a constant current density. Only at 140°C was the growth of phase affected by the passage of electric current. The growth rate was enhanced when diffusion of Sn and electron flow were in the same direction, and retarded when they were in the opposite direction. It was found that the diffusion coefficient of Sn through Ag3Sn was 3.37 μm2/h and the apparent effective charge for Sn in Ag3Sn was −90, at 140°C.  相似文献   

7.
The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu6Sn5 and continuous planar η-(cu0.9Ni0.1)6Sn5 intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu3Sn intermetallic layer is formed at the interface between the η-Cu6Sn5 and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag3Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.  相似文献   

8.
The interfacial reactions between liquid In-49Sn solder and Ni substrates at temperatures ranging from 150°C to 450°C for 15 min to 240 min have been investigated. The intermetallic compounds formed at the In-49Sn/Ni interfaces are identified to be a ternary Ni33In20Sn47 phase using electron-probe microanalysis (EPMA) and x-ray diffraction (XRD) analyses. These interfacial intermetallics grow with increasing reaction time by a diffusion-controlled mechanism. The activation energy calculated from the Arrhenius plot of reaction constants is 56.57 kJ/mol.  相似文献   

9.
For the application of In-49Sn solder in bonding recycled-sputtering targets to Cu back plates, the intermetallic compounds formed at the In-49Sn/Cu interface are investigated. Scanning electron microscopy (SEM) observations show that the interfacial intermetallics consist of a planar layer preceded by an elongated scalloped structure. Electron-probe microanalyzer analyses indicate that the chemical compositions of the planar layer and the scalloped structure are Cu74.8In12.2Sn13.0 and Cu56.2In20.1Sn23.7, respectively, which correspond to the ε-Cu3(In,Sn) and η-Cu6(In,Sn)5 phases. Kinetics analyses show that the growth of both intermetallic compounds is diffusion controlled. The activation energies for the growth of η- and ε-intermetallics are calculated to be 28.9 kJ/mol and 186.1 kJ/mol. Furthermore, the formation mechanism of intermetallic compounds during the In-49Sn/Cu soldering reaction is clarified by marking the original interface with a Ta-thin film. Wetting tests are also performed, which reveal that the contact angles of liquid In-49Sn drops on Cu substrates decline to an equilibrium value of 25°C.  相似文献   

10.
The intermetallic compounds (IMCs) formed during the reflow and aging of Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes were investigated. After reflow, the thickness of (Cu, Ni, Au)6Sn5 interfacial IMCs in Sn3Ag0.5Cu0.06Ni0.01Ge was similar to that in the Sn3Ag0.5Cu specimen. The interiors of the solder balls in both packages contained Ag3Sn precipitates and brick-shaped AuSn4 IMCs. After aging at 150°C, the growth thickness of the interfacial (Ni, Cu, Au)3Sn4 intermetallic layers and the consumption of the Ni surface-finished layer on Cu the pads in Sn3Ag0.5Cu0.06Ni0.01Ge solder joints were both slightly less than those in Sn3Ag0.5Cu. In addition, a coarsening phenomenon for AuSn4 IMCs could be observed in the solder matrix of Sn3Ag0.5Cu, yet this phenomenon did not occur in the case of Sn3Ag0.5Cu0.06Ni0.01Ge. Ball shear tests revealed that the reflowed Sn3Ag0.5Cu0.06Ni0.01Ge packages possessed bonding strengths similar to those of the Sn3Ag0.5Cu. However, aging treatment caused the ball shear strength in the Sn3Ag0.5Cu packages to degrade more than that in the Sn3Ag0.5Cu0.06Ni0.01Ge packages.  相似文献   

11.
The morphology and growth kinetics of intermetallic compounds formed during the interfacial reactions between liquid Sn-20In-2.8Ag solder and Ni substrates are investigated. Energy-dispersive x-ray (EDX) analysis identifies the composition of the interfacial intermetallics as Ni3(In0.99In0.01)4. The soldering reactions at lower temperatures (225–275°C) result in the predominant formation of a homogeneous intermetallic layer whose growth is diffusion controlled. At higher soldering temperatures (300–350°C), the interfacial intermetallics appear to be long needlelike crystals, and the grooves in between the intermetallics provide fast-diffusion paths for Ni atoms to react with Sn atoms at the intermetallic front, which leads to interface-controlled growth kinetics. The intermetallic needles turned out to be flat slablike after selective etching of the unreacted solder. Kinetics analysis showed that they not only lengthened in the longitudinal direction, but also coarsened transversely by the Ostwald ripening mechanism.  相似文献   

12.
In this study, solid-state interfacial reactions between Ag and Sn-Zn alloys with varying Zn content (0.1 wt.% to 9 wt.%) were investigated at 170°C. The reaction couples were prepared by electroplating Ag on the Sn-Zn alloy to avoid dissolution of Ag into the molten solder during soldering. The Zn content greatly influenced the reaction products and the interfacial microstructures. When the Zn content was less than 4 wt.%, Ag3Sn and AgZn layers were simultaneously formed. Notably, Zn could actively diffuse through the Ag3Sn layer and react with Ag to form the AgZn phase. With the proceeding reaction, small α-Ag particulates were produced within the AgZn phase. With 9 wt.% Zn, the dominant reactions formed Ag5Zn8 and AgZn layers. The interfacial microstructure evolved significantly with reaction time. Interface instability due to Zn depletion in the solder resulted in massive spalling of the Ag5Zn8 layer. The Ag3Sn phase was then produced next to the AgZn layer. Moreover, another reaction couple, Sn-9 wt.%Zn/Sn(15 μm)/Ag, was prepared, in which fast interdiffusion between Zn and Ag across the Sn layer was demonstrated due to the strong chemical affinity of Zn.  相似文献   

13.
The In-Sn-Ni alloys of various compositions were prepared and annealed at 160°C and 240°C. No ternary compounds were found; however, most of the binary compounds had extensive ternary solubility. There was a continuous solid solution between the Ni3Sn phase and Ni3In phase. The Sn-In/Ni couples, made of Sn-In alloys with various compositions, were reacted at 160°C and 240°C and formed only one compound for all the Sn-In alloys/Ni couples reacted up to 8 h. At 240°C, Ni28In72 phase formed in the couples made with pure indium, In-10at.%Sn and In-11at.%Sn alloys, while Ni3Sn4 phase formed in the couples made of alloys with compositions varied from pure Sn to In-12at.%Sn. At 160°C, except in the In/Ni couple, Ni3Sn4 formed by interfacial reaction.  相似文献   

14.
A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid–liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.  相似文献   

15.
The 0.2Co + 0.1Ni dual additives were used to dope a Sn-3.5Ag solder matrix to modify the alloy microstructure and the solder joint on an organic solderability preservative (OSP) Cu pad. The refined microstructure of the Sn-3.5Ag-0.2Co-0.1Ni solder alloy or the reduced β-Sn size was attributed to the depressed undercooling achieved by the Co-Ni addition. After soldering on the OSP Cu pad, a large Ag3Sn plate was formed at the Sn-3.5Ag/OSP solder joint, whereas it was absent at the Sn-3.5Ag-0.2Co-0.1Ni/OSP solder joints. With isothermal aging at 150°C, large Ag3Sn plates formed at the Sn-3.5Ag/OSP solder joint were still observed. A coarsened and dispersed Ag3Sn phase was found in the solder joints with Co-Ni additions as well. Compared to Cu6Sn5, the (Co,Ni)Sn2 intermetallic compound showed much lower microhardness values. However, (Co,Ni)Sn2 hardness was comparable to that of the Ag3Sn phase. Pull strength testing of Sn-3.5Ag-0.2Co-0.1Ni/OSP revealed slightly lower values than for Sn-3.5Ag/OSP during aging. Such results are thought be due to the phase transformation of (Co,Ni)Sn2 to (Cu,Co,Ni)6Sn5.  相似文献   

16.
The formation of Ag3Sn plates in the Sn-Ag-Cu lead-free solder joints for two different Ag content solder balls was investigated in wafer level chip scale packages (WLCSPs). After an appropriate surface mount technology reflow process on a printed circuit board, samples were subjected to 150°C high-temperature storage (HTS), 1,000 h aging, or 1,000 cycles thermal cycling test (TCT). Sequentially, the cross-sectional analysis was scrutinized using a scanning electron microscope/energy dispersive spectrometer (SEM/EDX) to observe the metallurgical evolution of the amount of the Ag3Sn plates at the interface and the solder bulk itself. Pull and shear tests were also performed on samples. It was found that the interfacial intermetallic compound (IMC) thickness, the overall IMC area, and the numbers of Ag3Sn plates increase with increasing HTS and TCT cycles. The amount of large Ag3Sn plates found in the Sn-4.0Ag-0.5 Cu solder balls is much greater than that found in the Sn-2.6Ag-0.5Cu solder balls; however, no significant difference was found in the joint strength between two different Ag content solder joints.  相似文献   

17.
Intermetallic compounds formed during the soldering reactions between Sn-3.5Ag and Cu at temperatures ranging from 250°C to 375°C are investigated. The results indicate that scallop-shaped η-Cu6(Sn0.933 Ag0.007)5 intermetallics grow from the Sn-3.5Ag/Cu interface toward the solder matrix accompanied by Cu dissolution. Following prolonged or higher temperature reactions, ɛ-Cu3 (Sn0.996 Ag0.004) intermetallic layers appear behind the Cu6(Sn0.933 Ag0.007)5 scallops. The growth of these interfacial intermetallics is governed by a kinetic relation: ΔX=tn, where the n values for η and ɛ intermetallics are 0.75 and 0.96, respectively. The mechanisms for such nonparabolic growth of interfacial intermetallics during the liquid/solid reactions between Sn-3.5Ag solders and Cu substrates are probed.  相似文献   

18.
A ZrO2 nanoparticle strengthened lead-free Sn-3,5Ag-ZrO2 solder was prepared by mechanically stirring ZrO2 nanoparticles into the molten melt of eutectic Sn-3.5Ag alloy. The influence of ZrO2 nanoparticles on the eutectic solidification process, in particular, the formation of Ag3Sn intermetallic compounds (IMCs) and the associated microstructure that forms and microhardness of Sn-3.5Ag solder, was systematically investigated. The addition of ZrO2 nanoparticles significantly refined the size of Ag3Sn IMCs due to the strong adsorption effect of the ZrO2 nanoparticles. The refined Ag3Sn IMCs increase the Vicker’s microhardness of the prepared Sn-3.5Ag-ZrO2 solder, which corresponds well with the prediction of the classic theory of dispersion strengthening.  相似文献   

19.
The growth kinetics of intermetallic compound layers formed between four hot-dipped solder coatings and copper by solid state, thermal aging were examined. The solders were l00Sn, 50In-50Sn, 100In, and 63Sn-37Pb (wt.%); the substrate material was oxygen-free, high conductivity Cu. The total intermetallic layer of the 100Sn/Cu system exhibited a combination of parabolic growth at lower aging temperatures and t0.42 growth at the higher temperatures. The combined apparent activation energy was 66 kJ/mol. These results are compared to the total layer growth observed with the 63Sn-37Pb/Cu system which showed parabolic kinetics at similar temperatures and an apparent activation energy of 45 kJ/mol. Both 100Sn and 63Sn-37Pb diffusion couples showed a composite intermetallic layer comprised of Cu3Sn and Cu6Sn5. The intermetallic compound layer formed between In and Cu changed from a CuIn2 stoichiometry at short annealing times to a Cu57In43 composition at longer periods. The growth kinetics were parabolic with an apparent activation energy of 20 kJ/mol. The intermetallic layer growth of the 50In-50Sn/Cu system exhibited extreme variations in the layer thicknesses which prohibited a quantitative assessment of the growth kinetics. The layer was comprised of two compounds: Cu26Sn13In8 which was the dominant phase and a thin layer of Cu17Sn9In24 adjacent to the solder.  相似文献   

20.
Immersion Ag is a promising candidate Pb-free surface finish on printed circuit boards (PCBs). For flexible PCB and optoelectronic packaging, solid-state bonding rather than reflow is commonly used to join the chips to the PCB with Sn-based solders, after which the immersion Ag layer remains at the joint interface and participates in the interfacial reactions at the solder joints. Solder joint samples composed of a Sn/Ag/Cu trilayer on flexible PCBs were prepared to study the interfacial reactions at 150°C and 200°C. Three phases, Ag3Sn, Cu6Sn5, and Cu3Sn, were sequentially formed at the interface. Remarkable change of the morphology of the Ag3Sn phase was observed during thermal aging. The thickness of the immersion Ag layer was found to have significant effects on the growth rates of the Cu6Sn5 and Cu3Sn phases and the void formation in the Cu3Sn phase.  相似文献   

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