共查询到19条相似文献,搜索用时 78 毫秒
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应用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜,在固定的电源功率下,氩气流量为42.6
sccm,氧流量为15 sccm,溅射时间为30 min的条件下,通过控制靶基距改变TiO2薄膜的光学性质.应用n&k
Analyzer 1200测量,当靶基距增加时薄膜的平均反射率降低,同时反射低谷先短波后长波之后再短波;靶基距对消光系数k影响较大;随着靶基距的增加薄膜的折射率出现了下降的趋势,但当靶基距达到一定的量值时折射率的变化趋于稳定.通过XRD和SEM表征发现,随着靶基距的增加TiO2的晶体结构由金红石相向锐钛矿相转变,薄膜表面的颗粒度大小由粗大变得微小细密. 相似文献
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温度对直流反应磁控溅射制备TiO2薄膜光学性质的影响 总被引:1,自引:0,他引:1
应用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜,在固定的电源功率下,氩气流量为42.6sccm,氧流量为15sccm,溅射时间为30分钟的条件下,通过控制温度改变TiO2薄膜的光学性质.应用n&k Analyzer 1200测量,当温度增加时薄膜的平均反射率降低同时反射低谷向长波方向移动;温度对消光系数k影响不大;当温度低于180℃薄膜的折射率变化不大,当温度达到240℃左右时薄膜的折射率明显降低.通过XRD和SEM表征发现,随着温度的增加TiO2的晶体结构由混晶变为单一的锐钛矿相,薄膜表面的颗粒由多变少,表面形貌由粗糙多孔变得细腻平滑. 相似文献
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用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜,在固定电源功率、氩气流量42.6sccm、氧流量15sccm、溅射时间30min的条件下,通过控制总气压改变TiO22薄膜的光学性质。应用n&k Analyzer 1200测量,当总气压增加时薄膜的平均反射率降低,同时反射低谷向短波方向移动,总气压对消光系数k影响不大;随着总气压的增加薄膜的折射率出现了下降的趋势,但当总气压达到一定量值时折射率的变化趋于稳定。通过XRD和SEM表征发现,随着总气压的增加TiO2的晶体结构由金红石相向锐钛矿相转变,薄膜表面的颗粒度大小由粗大变得微小细密。 相似文献
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应用直流反应磁控溅射设备在硅基底上制备TiO2薄膜,利用n&k仪对薄膜的反射率进行检测,结果表明TiO2薄膜可以作为太阳电池减反射薄膜应用,并且通过改变工艺条件可以调控薄膜的反射低谷.当总压强为2×10-1Pa、O2流量为15 sccm、靶基距为190 mm、温度为60℃的条件下制备的TiO2薄膜的减反射效果最好. 相似文献
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用直流磁控溅射方法在Si(100)面及载玻片上制备了Sb掺杂TiO2薄膜.利用XRD光谱研究了Sb对其薄膜结晶情况的影响,用AFM观察其表面形貌,利用分光光度计测量了TiO2薄膜的光学特性及其对亚甲基蓝的分解活性,通过测量和计算表面对水的接触角来衡量光致亲水性.研究结果表明纯TiO2薄膜为锐钛矿型,适量Sb的掺杂能使TiO2薄膜的结晶有显著改善,并出现Ti2O3和金红石相TiO2,薄膜的光催化活性和光致亲水性明显改善.随着掺杂量的增加,TiO2薄膜的吸收边逐渐红移.但Sb掺杂过量时,破坏了二氧化钛原有的晶格结构,光催化活性和光致亲水性也相应降低. 相似文献
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直流反应磁控溅射制备二氧化钛薄膜的光催化性研究 总被引:13,自引:1,他引:12
在磁控溅器中用钛板作阴极,采用直流反应磁控溅射在玻璃基板上制备二氧化钛薄膜,溅射气体为氧、氩混合气体,O2与Ar比例为1:2,溅总气压范围为0.5-6.65Pa,溅射时基板温度范围为100-400℃,薄膜厚度范围为140-1100nm。 相似文献
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沉积速率及相关工艺条件对直流反应磁控溅射制备TiO2薄膜性质的影响 总被引:5,自引:0,他引:5
在玻璃基板上用直流反应磁控溅射钛靶的方法制备TiO2 薄膜。在溅射总气压为 0 4Pa ,氧氩比分别为 1∶9,1∶5及 1∶3 2的情况下 ,调节溅射功率使沉积速率由 0 99nm/min变化到 12 12nm/min ,而且当基板温度为 34 0℃时 ,薄膜在可见光范围内的平均折射率基本不变 ,为 2 48± 0 0 3,而薄膜的表面形貌却有明显变化。XRD表明 ,在pO2 /pAr为 1∶9的条件下 ,薄膜中出现了TiOx(x <2 )的晶粒 ,但这对薄膜的光学性质并无影响。另外对TiO2 薄膜用于多层光学薄膜也作了初步试验及讨论 相似文献
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Kang SJ Kim KJ Chung MC Jung SC Boo SI Cho SK Jeong WJ Ahn HG 《Journal of nanoscience and nanotechnology》2011,11(2):1692-1695
Nanosized TiO2 thin film on the substrate such as stainless steel plate and slide glass film were prepared by magnetron sputtering method, and these TiO2 thin films were characterized by field emission-scanning electron microscopy (FE-SEM). Photocatalytic activity for Methyl-ethyl-ketone (MEK) and acetaldehyde were measured using a closed circulating reaction system through the various ultra violet (UV) sources. From the results of SEM images, nanosized TiO2 thin film was uniformly coated on slide glass, ranging from 360 nm to 370 nm. Photocatalytic activity of MEK over TiO2 thin film on stainless steel plate did not occur by UV-A irradiation, but was efficiently decomposed by UV-B and UV-C. Also, acetaldehyde could be decomposed than MEK. The effect of sputtering conditions on their structure and photocatalytic activities were investigated in detail. 相似文献
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Moon YK Kim WS Kim KT Shin SY Park JW 《Journal of nanoscience and nanotechnology》2012,12(4):3341-3345
Here we demonstrate the fabrication of SnO(x) thin-film transistors (TFTs), where SnO(x) thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO(x) thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO(x) thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer. 相似文献
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Pulsed DC magnetron sputtering was used in this study to prepare lead zirconate titanate (Pb(ZrxTi1−x)O3, PZT) thin films. A single metallic target was used for the deposition onto a Pt/Ti/SiO2/Si substrate and parameters such as: pulse frequency, duty cycle, O2/Ar flow ratio controlled so as to analyze the effect of the parameters on thin film deposition rate, crystalline structure and morphology. After the deposition, the thin film was annealed in a rapid thermal annealing (RTA) furnace. The experimental results showed that, when the pulse frequency was in the range of 10 kHz-100 kHz, along with the lowering of frequency and the oxygen argon flow rate ratio, the deposition rate gradually increased and the formation of PZT thin film perovskite phase was enhanced; however, if the oxygen argon flow rate ratio was too high, it caused the PZT thin film to generate a pyrochlore phase. However, when the duty cycle was in the range of 95%-75%, the highest deposition rate and better perovskite phase could be obtained in the range of 75%-80%. 相似文献
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K.P.S.S. Hembram 《Materials Letters》2007,61(2):502-505
The search for alternative dielectric materials with high dielectric constant, thermodynamic stable on silicon substrate and low direct tunneling current leads to oxide based materials like zirconia. Zirconia thin films were prepared by reactive magnetron sputtering. The capacitance voltage, ac and dc electrical characteristics were investigated and the values like fixed oxide charges were calculated and compared among the samples with and without annealing. Films annealed at 700 °C showed a dielectric constant ∼ 26 with interface trap densities of 1.629 × 1012 eV− 1 cm− 2. 相似文献
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Jung-pil Noh Gyu-bong Cho Ki-taek Jung Won-gyeong Kang Chung-wan Ha Hyo-jun Ahn Jou-Hyeon Ahn Tae-hyun Nam Ki-won Kim 《Materials Research Bulletin》2012,47(10):2823-2826
LiCoO2 thin films were fabricated on Al substrate by direct current magnetron sputtering method. The effects of Ar/O2 gas rates and annealing temperatures were investigated. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction, Raman scattering spectroscopy and field emission scanning electron microscopy. The as-deposited LiCoO2 thin films exhibited amorphous structure. The crystallization starts at the annealing temperature over 400 °C. However, the annealed films have the partially disordered structure without completely ordered crystalline structure even at 600 °C annealing. The electrochemical properties of the LiCoO2 films were investigated by the charge–discharge and cycle measurements. The 500 °C annealing film has the highest capacity retention rate of 78.2% at 100th cycles. 相似文献
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Nitrogen-doped indium tin oxide (N-ITO) thin films are deposited on unheated ITO glass substrates in this study. The structural properties of the N-ITO thin films, determined by X-ray diffraction (XRD) and Raman scattering, show that the indium nitride (InN) phase is liable to form in N-ITO films prepared in 20% N2. A broad XRD peak around 2θ = 33° and Raman peak around 490 cm− 1 are assigned to the InN phase, but no such peak is observed from the ITO film. Hence, the bandgap is narrowed by N-doping for absorbing light of longer wavelengths of ~ 500 nm. However, under illumination by ultraviolet, the N-ITO film prepared in 20% N2 exhibits the least photocurrent response, which is less than one third that of the N-ITO catalyst that was doped in 16.4% N2. This result is attributed mostly to the fact that the valence and conduction band potentials are not positioned properly between the newly formed InN and host ITO phases, rendering inefficient inter-semiconductor electron transfer. Therefore, higher N-doped samples exhibit a lower photocurrent response. Interestingly, the N-ITO film prepared in 16.4% N2 exhibits the highest photocurrent density of about 165.5 μA/cm2 at an applied bias of 1.2 V. This implies that the N-ITO films should be prepared at a low N2 ratio to ensure a favorable photoelectrochemical activity. 相似文献