铜熔炼过程中伴生元素分配行为的计算机模型

本文提出了伴生元素Ｎｉ，Ｃｏ，Ｓｎ，Ｐｂ，Ｚｎ，Ａｓ，Ｓｂ，Ｂｉ，Ａｕ和Ａｇ在铜熔炼过程中分配行为的计算机模型。     

Observation of Multi-layer Film on Si Substrate

ＯｂｓｅｒｖａｔｉｏｎｏｆＭｕｌｔｉ－ｌａｙｅｒＦｉｌｍｏｎＳｉＳｕｂｓｔｒａｔｅＬｉｕＡｎｓｈｅｎｇ；ＡｎＳｈｅｎｇ；ＳｈａｏＢｅｉｌｉｎｇ；ＷａｎｇＪｉｎｇ；ＳｈｅｎＨｕｉｚｈｕ（刘安生）（安生）（邵贝羚）（王敬）（沈惠珠）（ＧｅｎｅｒａｌＲｅｓ...     

Study on Mn-Si-B system hardfacing electrode

ＳｔｕｄｙｏｎＭｎ－Ｓｉ－ＢｓｙｓｔｅｍｈａｒｄｆａｃｉｎｇｅｌｅｃｔｒｏｄｅＷａｎｇＬｉａｎｆａｎｇ；ＣｈｅｎＢｏｌｔａｎｄＪｉｎＸｉｌｏｎｇ（ＴｓｉｎｇｈｕａＵｎｉｖｅｒｓｉｔｙ，Ｂｅｉｊｉｎｇ）Ａｂｓｔｒａｃｔ：Ｍｎ－Ｓｉ－Ｂｓｙｓｔｅｍｍｅｄ...     

Zn,Al对Mn—Cu减振合金减振性能的影响

研究了合金元素Ｚｎ、Ａｌ对新型减振降噪（高阻尼）铸造ＭｎＣｕ合金Ｍｓ点、减振性能及力学性能的影响,重点讨论了合金成分与减振性能ＳＤＣ及力学性能的关系。开发了高阻尼、高强度锰铜基阻尼合金ＺＭｎＤ１Ｊ,最优成分为Ｍｎ５０％、Ｚｎ５％、Ａｌ２％、余量Ｃｕ。典型性能：ＳＤＣ＝４４．５％,σｂ＝６７８ＭＰａ,δ＝２４．１％。ＭｎＣｕ系新型高阻尼功能材料的减振能力很高,同时力学性能可达ＺＧＤ３４５５７０的水平,可做结构材料使用。     

Thermodynamic Analysis of Ga-As-Sb-C-H System and Design of MOVPE Process for Ga(As,Sb) Semiconductor

ＴｈｅｒｍｏｄｙｎａｍｉｃＡｎａｌｙｓｉｓｏｆＧａＡｓＳｂＣＨＳｙｓｔｅｍａｎｄＤｅｓｉｇｎｏｆＭＯＶＰＥＰｒｏｃｅｓｆｏｒＧａ（Ａｓ，Ｓｂ）ＳｅｍｉｃｏｎｄｕｃｔｏｒＬｉＪｉｎｇｂｏ，ＺｈａｎｇＷｅｉｊｉｎｇ，ＬｉＣｈａｎｇｒｏｎｇａｎｄＤ...     

Sn—Sb合金的热力学性质研究

本文在自行研制的测定蒸气压装置上，测定了９个不同成分的Ｓｎ－Ｓｂ合金在９２３，１０２３，１１２３Ｋ时Ｓｂ的活度．据此回归得到了Ｓｎ－Ｓｂ合金在９２３－１１２３Ｋ内ｌｎ＿（γＳｂ）、和Ｘ＿（Ｓｂ）关系的经验式，并根据Ｇｉｂｂｓ－Ｄｕｈｅｍ方程获得了ｌｎ＿（γＳｎ）和Ｘ＿（Ｓｂ）的关系式．结果表明：在９２３－１１２３Ｋ内Ｓｎ－Ｓｂ合金在整个浓度范围内较为接近规则溶液，同时仍为对理想溶液具有较大负偏差的实际溶液．     

Sn－Sb合金的热力学性质研究

本文在自行研制的测定蒸气压装置上，测定了９个不同成分的Ｓｎ－Ｓｂ合金在９２３，１０２３，１１２３Ｋ时Ｓｂ的活度．据此回归得到了Ｓｎ－Ｓｂ合金在９２３－１１２３Ｋ内ｌｎ＿（γＳｂ）、和Ｘ＿（Ｓｂ）关系的经验式，并根据Ｇｉｂｂｓ－Ｄｕｈｅｍ方程获得了ｌｎ＿（γＳｎ）和Ｘ＿（Ｓｂ）的关系式．结果表明：在９２３－１１２３Ｋ内Ｓｎ－Ｓｂ合金在整个浓度范围内较为接近规则溶液，同时仍为对理想溶液具有较大负偏差的实际溶液．     

ICP-AES法测定金合金中的杂质元素

研究了Ａｕ－Ｎｉ（（Ｙ、Ｇｄ）、Ａｕ－Ｃｕ、Ａｕ－Ｎｉ－Ｃｕ、Ａｕ－Ｃｕ－Ｎｉ－Ｚｎ（Ｍｎ）合金中的杂质元素（Ｐｂ、Ｓｂ、Ｂｉ、Ａｓ、Ｓｎ、Ｆｅ、Ａｌ、Ｚｒ、Ｂｅ、Ｖ、Ｔｉ、Ｉｎ）用Ｙ作载体的共沉淀分离富集方法。富集物转成盐酸溶液后用ＩＣＰ－ＡＥＳ法测定,试液中共存元素间的干扰用等效浓度法校正。取试样１２５克时分析范围００００４％～０２０％。ＲＳＤ一般不超出±１０％。     

稀土元素在金属材料中的一些物理化学作用

针对不同金属溶液体系，采用了不同的实验方法，研究得到了铁液中Ｃｅ，Ｙ，Ｌａ，Ｎｄ，Ｓｍ分别与Ｓ，Ｏ，Ｓ＋Ｏ，Ｃ，Ｎ，Ｓｂ，Ｓｎ Ｐｂ，Ｐ，Ｃｕ，Ｔｉ，Ｎｂ，Ｖ溶质元素，镍液中Ｃｅ，Ｙ分别与Ｓ，Ｏ，Ｓ＋Ｏ溶质元素，铜液中Ｃｅ，Ｙ分别与Ｓ，Ｏ，Ｓ＋Ｏ，Ｓｎ，Ｚｎ，Ｐｂ，Ａｌ，Ｓｉ，Ｔｉ，Ｆｅ溶质元素，铝液中Ｃｅ分别与Ｍｇ，Ｔｉ，Ｍｎ，Ｚｎ，Ｆｅ，Ｓｎ，Ｐｂ，Ｎｉ，Ｃｕ，Ｓｉ，Ｓ溶质元素构成的６７个三元     

ICP-AES法分析Au-Sb合金

用乙醚萃取Ａｕ－Ｓｂ合金中的Ａｕ，加络合剂抑制Ｓｂ的水解，提高了测定杂质元素的准确度。查明Ｓｂ对杂质元素测定的干扰。杂质元素标准加入回收率８２～１０３％，相对标准偏差２．０～１４％。制定了Ａｕ－Ｓｂ合金中Ｐｔ、Ｐｄ、Ｒｈ、Ｉｒ、Ａｇ等２６个杂质元素及合金成份Ｓｂ的测定方法。取２．５ｇ样品时杂质元素的测定下限为１×１０－４～２×１０－４％。测定Ｓｂ时相对误差＜２％。     

锑掺杂二氧化锡固溶体形成作用机制研究

采用化学共沉淀法制备了Sn1-xSbxO2(x=0~1)固溶体,用XRD、TG-DTA和XPS手段分析了该类固溶体的物相组成,并根据分析的结果绘制了固相线下相图,重点考察了Sn1-xSbxO2(x=0~1)固溶体的形成作用机制。结果表明:在600~1000℃退火温度下,Sn0.95Sb0.05O2固溶体只有四方金红石型SnO2物相的存在,锑主要以Sb5+的形式进入SnO2晶格内形成有限固溶体,而Sn0.6Sb0.4O2和Sn0.2Sb0.8O2固溶体分别在700和800℃出现了斜方白安矿型Sb2O4和四方金红石型SnO2分相;固相线下Sn1-xSbxO2(x=0~1)固溶体相图分为3个区域:四方SnO2单相区,SnO2+Sb2O4两相区和斜方Sb2O4单相区,四方SnO2单相区是(Sn,Sb)O2ss固溶体(Sb3+或Sb5+进入SnO2晶格内,并达到饱和)。(Sn,Sb)O2ss固溶体可作为导电性好和耐腐蚀的半导体材料。     

Development of novel brasses to resist dezincification

The effect of alloying Sn, Pb, As, Sb and P on the dezincification of commercial brass 60Cu-39Zn-1Pb has been investigated in 1% CuCl₂ solution by immersion studies and electrochemical measurements. Specimens with a smooth surface finish exhibited more resistance to dezincification. Appreciable inhibitive effect on dezincification was observed for the 55Cu-40Zn-3Pb-2Sn brass composition. The galvanic coupling of lead phase with the matrix accelerated corrosion. To improve the dezincification resistance of the Sn containing brass, As, Sb and P were added at two different levels (0.05% and 0.1%). Brass of composition 48.95Cu-45Zn-5Pb-1Sn-0.05As was more resistant indicating the synergistic effect of Sn and As. The effect of 0.05 and 0.1% of arsenic addition with various concentrations of zinc was also studied. The alloy of composition 57.90Cu-40Zn-2Pb-0.1As showed better corrosion resistance than the alloy containing 1% Sn and 0.05% As (48.95Cu-45Zn-5Pb-1Sn-0.05As). To understand the influence of Sn and As on the dezincification of commercial brass, linear polarization and cyclic voltammetry experiments were conducted for the alloys 60Cu-39Zn-1Pb, 55Cu-40Zn-3Pb-2Sn and 57.90Cu-40Zn-2Pb-0.1As. Linear polarization measurements indicated that the alloys 55Cu-40Zn-3Pb-2Sn and 57.90Cu-40Zn-2Pb-0.1As possessed higher resistance to corrosion than commercial brass. Inspection of cyclic voltammograms revealed that the peak current densities as well as the passive current density were lower for the alloys 55Cu-40Zn-3Pb-2Sn and 57.90Cu-40Zn-2Pb-0.1As than the alloy 60Cu-39Zn-1Pb. The surface layer on the alloys 60Cu-39Zn-1Pb, 55Cu-40Zn-3Pb-2Sn and 57.90Cu-40Zn-2Pb-0.1As after immersion of 72 h in 1% CuCl₂ solution were analyzed by X-ray diffraction and scanning electron microscopy. Higher enrichment of Sn and As at the interface of surface layer and metal was indicated for the alloys 55Cu-40Zn-3Pb-2Sn and 57.90Cu-40Zn-2Pb-0.1As, respectively.     

分子相互作用体积模型在真空蒸馏分离铅-锡-锑三元合金中的应用

基于分子相互作用体积模型(MIVM),计算Pb?Sn?Sb三元合金体系的活度,并使用活度系数计算真空蒸馏过程中Pb?Sn?Sb三元合金体系的气液相平衡。结果表明：随着蒸馏温度和液相中锡含量的增加,气相中锡含量也不断增加;然而,在1100°C液相中锡含量为97%(质量分数)时,气相中锡含量仅为0.45%,分离效果较好。在真空(10 Pa)条件下,在1100~1300°C蒸馏温度范围内进行真空蒸馏分离Pb?Sn?Sb三元合金实验。结果表明：在1100°C时,当液相中锡含量为97%时,气相中锡含量为0.54%。最后对比分析了实验结果和预测值,分析表明实验结果和预测值吻合较好。     

Interdiffusion in liquid tin

The interdiffusion coefficients of Zn, Ag, Sb, Pb, and Bi in liquid Sn were determined using both shear cell and long capillary techniques. These elements were chosen to provide a range of valences and atomic radii, variables that are expected to affect the interdiffusion coefficients. The results indicate that Sb and Ag diffuse in liquid Sn at the same rate as does Sn itself. Bi and Pb appear to diffuse more slowly in liquid Sn than does Sn. Zn appears to diffuse more rapidly in liquid Sn than does Sn itself. These results indicate that the atomic radius is an important variable for interdiffusion in liquid Sn. However, the results for the interdiffusion of Zn, Pb, and Bi, were more scattered than those for Ag and Sb, suggesting that some convective mixing, due possibly to transverse temperature gradients, may be occurring even in capillaries with only 1.5 mm diameters.     

微量锑和锡对铝基牺牲阳极材料性能的影响

熔炼了添加合金元素Sb和Sn的5种Al-Zn-In系牺牲阳极材料,采用恒电流方法测试了其电化学性能,采用金相显微镜、扫描电镜和能谱分析分别观察和分析了阳极材料的显微组织和组成.结果表明:Sb具有细化晶粒的作用,但晶界存在较多偏析相,电流效率偏低;与Sb相比较,Sn也具有细化晶粒的作用,电流效率有所提高,晶界偏析相较少,但阳极的表面腐蚀溶解不均匀;Sn和Sb的协同作用在于能有效地抑制Si的偏析,显著提高阳极的电流效率,使得阳极表面具有良好的腐蚀溶解性.     

Sb对Mg-5Sn-2Al-1.5Zn-0.8Si合金组织和性能的影响

在熔炼时以单质形式加入Sb元素,研究了不同含量的Sb对Mg-5Sn-2Al-1.5Zn-0.8Si合金显微组织和力学性能的影响。结果表明,Sb能与Mg基体结合生成Mg3Sb2相。加入0.9%(质量分数)的Sb对Mg2Si相的汉字状结构具有强烈变质作用,Mg2Si中的Si能与Sn发生取代作用,生成Mg2(Si,Sn)复合相,该相的物理性能介于Mg2Si与Mg2Sn之间。随着Sb含量的增加,铸态合金和挤压态合金的延伸率逐渐减小,而抗拉强度呈现先增加后降低的趋势。挤压态合金的强度和塑性明显优于铸态合金,并且Sb含量的增加有利于改善Mg-5Sn-2Al-1.5Zn-0.8Si合金的耐热性能。     

Studies on leaching of metals from solders due to corrosion

Leaching of Ag, Cd, Cu, Pb, Sn, Sb and Zn from 50/50 Pb/Sn, 95/5 Sn/Sb and 96/4 Sn/Ag soldered copper plates into distilled, tap and well waters as a function of contact time under static conditions was done. Ag, Cd and Sb were not leached to significant extent. Significant amounts of tin were leached especially into tap and well waters. The amount of copper leached from soldered samples was in general less than the amount leached from blank copper samples. The amount of Zn leached was by far less than the drinking water quality limit (5 mg/L). The amount of Pb leached from nonleaded solders was less than 10 μg/L and exceeded 10 μg/L in the case of Pb/Sn solder. Surface analysis by X-ray photoelectron spectroscopy and electron microprobe techniques of Pb/Sn solder samples showed the presence of Pb and Sn oxides. The results fit into galvanic corrosion scheme of the solder surface.     

The 260 °C phase equilibria of the Sn–Sb–Cu ternary system and interfacial reactions at the Sn–Sb/Cu joints

The isothermal section of the Sn–Sb–Cu ternary system at 260 °C has been determined in this study by experimental examination. Experimental results show no existence of ternary compounds in the Sn–Sb–Cu system. An extensive region of mutual solubility existing between the two binary isomorphous phases, Cu₃Sn and Cu₄Sb, was determined and labeled as δ. Intermetallic compounds (IMCs) Cu₂Sb, SbSn, and Cu₆Sn₅ are in equilibrium with the δ solid solution. Up to about 6.5 at.%Sb can dissolve in the Cu₆Sn₅ phase, and the solubility of Sn in the Cu₂Sb is approximately 6.2 at.%. Each of the Sb and SbSn phases has a limited solubility of Cu. Only one stoichiometric compound, Sb₂Sn₃, exists. Besides phase equilibria determination, the interfacial reactions between the Sn–Sb alloys and Cu substrates were investigated at 260 °C. Sb was observed to be present in the Cu₆Sn₅ and δ phases, and Sb did not form Sn–Sb IMCs in the interfacial reactions. Moreover, the addition of up to 7 wt% of Sb into Sn does not significantly affect the total thickness of IMC layers. It was found that the phase formations in the Sn–Sb/Cu couples are very similar to those in the Sn/Cu couples.     

Effects of Sb Addition on Microstructural Evolution and Mechanical Properties of Mg–9Al–5Sn Alloy

The Mg–9Al–5Sn-xSb(x=0.0,0.3,0.6,1.0,1.5 wt%) alloys were prepared by a simple alloying process followed by hot extrusion with an extrusion ratio of 28.2. The effects of Sb additions on the microstructure and mechanical properties of the Mg–9 Al–5 Sn alloys were investigated by optical microscopy, X-ray diffraction, transmission electron microscopy, scanning electron microscopy equipped with an energy-dispersive X-ray spectrometer. The results indicated that the phases α-Mg matrix, Mg_2_Sn, Mg_3Sb_2 and Mg_17 Al_12 exist in the as-cast Sb-containing alloys. Sb addition results in the precipitation of Mg_3Sb_2. The dendritic size of these alloys decreases with the addition of Sb. Both their ultimate tensile strength and yield strength of extruded alloys increase, and their elongation decreases gradually with increasing the content of Sb. The better mechanical properties of the as-extruded alloys were achieved due to the refined grains and the formation of dispersive second phases Mg_3Sb_2.     

Sn5Sb1Cu0.1Ni0.1Ag/Cu(Ni)焊点的抗时效性能

采用扫描电镜(SEM)研究在150 ℃等温时效下Cu/Sn5Sb1Cu0.1Ni0.1Ag/Cu与Ni/Sn5Sb1Cu0.1Ni0.1Ag/Ni焊点的界面扩散行为. 结果表明,在时效过程中,随着时效时间的增加,Cu/Sn5Sb1Cu0.1Ni0.1Ag/Cu焊点界面金属间化合物(intermetallic compound,IMC)形貌由开始的细针状生长为棒状,IMC层厚度增加,界面IMC主要成分为(Cu,Ni)₆Sn₅. Ni/Sn5Sb1Cu0.1Ni0.1Ag/Ni焊点的界面IMC形貌由细小突起状转变为较为密集颗粒状,且IMC层厚度增加,界面IMC主要成分为(Cu,Ni)₃Sn₄. 经过线性拟合,两种焊点的界面IMC层生长厚度与时效时间t1/2呈线性关系,Sn5Sb1Cu0.1Ni0.1Ag/Cu界面间IMC的生长速率为7.39 × 10?2 μm2/h,Sn5Sb1Cu0.1Ni0.1Ag/Ni界面间IMC的生长速率为2.06 × 10?2 μm2/h. 镀镍层的加入可以显著改变界面IMC的形貌,也可降低界面IMC的生长速率,抑制界面IMC的生长,显著提高抗时效性能.