1/f noise in very-long-wavelength infrared Hg1−xCdx Te detectors

This paper investigates 1/f noise performance of very-long-wavelength infrared (VLWIR) Hg_1−xCd_xTe (cutoff wavelengths λ_c=15 μm and λ_c=16 μm) photodiodes at 78 K, where detector current is varied by changing detector area, detector bias, and illumination conditions. Holding detector bias and temperature constant, the 1/f noise current is proportional to the detector current. Significant nonuniformity is observed in the noise data for each detector area because of the varying detector quality. Defects are presumed resident in the detectors to produce greater nonuniformity in 1/f noise as compared to dark current at 100-mV reverse bias. For λ_c=16 μm, 4-μ-radius, diffusion-limited diodes at 78 K and 100-mV reverse bias, the average dark current is I_d=9.76±1.59×10⁻⁸ A, while the average noise current measured at 1 Hz is i_n=1.01±0.63×10⁻¹² A/Hz^1/2. For all detector areas measured, the average ratio in 1-Hz bandwidth is α _D =i_n/I_d=1.39±1.09×10⁻⁵. The 1/f noise was also measured on one diode as a function of detector-dark current as the applied bias is varied. In the diffusion-limited portion of this detector’s current-voltage (I-V) curve, to about 130 mV, the 1/f noise was independent of bias. For this diode, the ratio α_D=i_n/I_d=1.51±0.12×10⁻⁵. The 1/f noise associated with tunneling currents is a factor of 3 greater than the 1/f noise associated with diffusion currents, α_T=i_n/I_T=5.21±0.83×10⁻⁵. In addition, 1/f noise was measured on detectors held at −100 mV and 78K under dark and illuminated conditions. The measured ratios α_P ∼α_D ∼1.5×10⁻⁵ were about the same for the dark and photon-induced diffusion currents. Therefore, the diffusion current appears to have a unique value of α as compared to the tunneling current. This may be indicative of unique noise-generation mechanisms associated with each current.     

Current mechanisms in VLWIR Hg1−xCdxTe photodiodes

VLWIR (_c∼15 m to 17 m at 78 K) detectors have been characterized as a function of temperature to determine the dominant current mechanisms impacting detector performance. I_d−V_d curves indicate that VLWIR detectors are diffusion limited in reverse and near zero bias voltages down to temperatures in the 40 K range. At 30 K the detectors are limited by tunneling currents in reverse bias. Since the detectors are diffusion limited near zero bias down to 40 K, the R₀A_imp versus temperature data represents the diffusion current performance of the detector as a function of temperature. The detector spectral response measurement and active layer thickness are utilized to calculate the HgCdTe layer x value and the optical activation energy E_{a optical}. The activation energy, E_{a electrical}, obtained from the measured diffusion limited R₀A_imp versus temperature data is not equal to the activation energy, E_{a optical}, obtained from the spectral response measurement for all x values measured. E_{a electrical}=^*E_{a optical}, where ranges between 0.64 and 1.0 For cutoff wavelengths in the 9 m at 78 K, E_{a electrical}=E_{a optical}. E_{a electrical}=0.65^* E_{a optical} have been measured for_c=17 m at 78 K detectors. As the band gap energy decreases to values in the range of 70 meV and lower, it is reasonable to expect a more dominant role of band tailing effects on the transport properties of the material system. In such a picture, one would expect the optical band gap to be unmodified, whereas the intrinsic concentration could be enhanced from its value for the ideal semiconductor. Such a picture could explain the observed behavior. Further probing experiments and modeling efforts will help clarify the physics of this behavior.     

From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n ?/ p Ion Implantation Technology

This paper aims at studying the feasibility of very long infrared wavelength (VLWIR) (12–18 μm) focal plane arrays using n-on-p planar ion-implanted technology. To explore and analyze the feasibility of such VLWIR detectors, a set of four Cd _x Hg_1−x Te LPE layers with an 18 μ cutoff at 50 K has been processed at Defir (LETI/LIR–Sofradir joint laboratory), using both our “standard” n-on-p process and our improved low dark current process. Several 320 × 256 arrays, 30-μm pitch, have been hybridized on standard Sofradir readout circuits and tested. Small dimension test arrays characterization is also presented. Measured photonic currents with a 20°C black body suggest an internal quantum efficiency above 50%. Typical I(V) curves and thermal evolution of the saturation current are discussed, showing that standard photodiodes remain diffusion limited at low biases for temperatures down to 30 K. Moreover, the dark current gain brought by the improved process is clearly visible for temperatures higher than 40 K. Noise measurements are also discussed showing that a very large majority of detectors appeared background limited under usual illumination and biases. In our opinion, such results demonstrate the feasibility of high-performance complex focal plane arrays in the VLWIR range at medium term.     

Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetric double gate MOSFET

This paper present, the modeling and estimation of edge direct tunneling current of metal gate (Hf/AlN_x) symmetric double gate MOSFET with an intrinsic silicon channel. To model this leakage current, we use the surface potential model obtained from 2D analytical potential model for double gate MOSFET. The surface potential model is used to evaluate the electric field across the insulator layer hence edge direct tunneling current. Further, we have modeled and estimated the edge direct tunneling leakage current for high-k dielectric. In this paper, from our analysis, it is found that dual metal gate (Hf/AlN_x) material offer the optimum leakage currents and improve the performance of the device. This feature of the device can be utilized in low power and high performance circuits and systems.     

Temperature dependent IDS-VGS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate

在Si(110)衬底上制备了Ge源n型Si沟道隧穿场效应晶体管（TFET）。本文研究了温度对Ge源Si TFET器件的电学性能的影响。温度相关性研究显示器件漏电流主要由漏区的Shockley - Read - Hall (SRH) 产生于复合电流决定。器件开态电流随温度升高而增加,这是因为温度升高材料禁带宽度减小,隧穿几率增大。界面缺陷引起的隧穿电流的亚阈值摆幅随温度升高而变差,但是带间隧穿电流的亚阈值摆幅不随温度变化而变化。     

Current voltage modeling of current limiting mechanisms in HgCdTe focal plane array photodetectors

An automated iterative nonlinear fitting program has been developed to model current-voltage (I–V) data measured on HgCdTe infrared (IR) detector diodes. This model includes the ideal diode diffusion, generation-recombination, band-to-band tunneling, trap-assisted tunneling (TAT), and avalanche breakdown as potential current limiting mechanisms in an IR detector diode. The modeling presented herein allows one to easily distinguish, and more importantly to quantitatively compare, the amount of influence each current limiting mechanism has on various detectors’ I–V characteristics. Longer cutoff wavelength detectors often exhibit significant current limitations due to tunneling processes. The temperature dependence of these tunneling characteristics is thoroughly investigated for two diodes.     

Photovoltaic effect and carrier transport mechanisms in Hg1-Mnxtdiodes

Hg_1-xMn_xTe semiconducting semimagnetic alloy has been examined in the context of its possible applications in infrared detectors. For analysis of detector properties the intrinsic carrier concentration has been calculated as a function of temperature and crystal composition. The starting material was In-doped Hg_1-xMn_xTe grown by the modified Bridgman method. The as-grown crystals with manganese content of 12-19% were p-type with carrier concentration and mobility of 100 cm²/ Vs at 77 K. An-type layer was formed on the surface by the annealing process in saturated Hg-vapour at 270-320° for 2 hrs. Capacitance-voltage curves have C^-3 dependence on applied voltage indicating that the junction is linearly graded. From standard electrical measurements and spectral characteristics the main detector parameters were determined and compared to those of Hg_1-xCd_xTe devices. The influence of material properties on detector parameters was analyzed. In order to estimate the carrier transport mechanisms, differential resistivities and current-voltage curves were measured over a wide range of temperaturesi.e. 25 to 300 K. From the temperature dependence of the R₀A product, it was established that at high temperatures (150-300 K) the carrier transport is dominated by a recombination-generation mechanism. In low temperature region the excess current at forward bias is probably attributed to carrier tunneling via energy states distributed randomly within the forbidden gap. At reverse bias the leakage surface or volume currents dominate in the carrier transport.     

Large VLWIR Hg1−xCdxTe photovoltaic detectors

Very long wavelength infrared (VLWIR; 15 to 17 μm) detectors are required for remote sensing sounding applications. Infrared sounders provide temperature, pressure and moisture profiles of the atmosphere used in weather prediction models that track storms, predict levels of precipitation etc. Traditionally, photoconductive VLWIR (λ_c >15 μm) detectors have been used for sounding applications. However, photoconductive detectors suffer from performance issues, such as non-linearity that is 10X – 100X that of photovoltaic detectors. Radiometric calibration for remote sensing interferometry requires detectors with low non-linearity. Photoconductive detectors also suffer from non-uniform spatial optical response. Advances in molecular beam epitaxy (MBE) growth of mercury cadmium telluride (HgCdTe) and detector architectures have resulted in high performance detectors fabricated in the 15 μm to 17 μmm spectral range. Recently, VLWIR (λ_c ∼ 17 μm at 78 K) photovoltaic large (1000 μm diameter) detectors have been fabricated and measured at flux values targeting remote sensing interferometry applications. The operating temperature is near 78 K, permitting the use of passive radiators in spacecraft to cool the detectors. Detector non-AR coated quantum efficiency >60% was measured in these large detectors. A linear response was measured, while varying the spot size incident on the 1000 μm detectors. This excellent response uniformity, measured as a function of spot size, implies that low frequency spatial response variations are absent. The 1000 μm diameter, λ_c ∼ 17 μm at 78 K detectors have dark currents ∼160 μA at a −100 mV bias and at 78 K. Interfacing with the low (comparable to the contact and series resistance) junction impedance detectors is not feasible. Therefore a custom pre-amplifier was designed to interface with the large VLWIR detectors operating in reverse bias. A breadboard was fabricated incorporating the custom designed preamplifier interfacing with the 1000 μm diameter VLWIR detectors. Response versus flux measurements were made on the large VLWIR detectors and non-linearity <0.15% was measured at high flux values in the 2.5×10¹⁷ to 3.5×10¹⁷ ph-cm⁻²sec⁻¹ range. This non-linearity is an order of magnitude better than for photoconductive detectors.     

Analytical Simulation of an InAsSb Photovoltaic Detector for Mid-Infrared Applications

A generic model of a mid-infrared photodetector based on a narrow bandgap semiconductor has been developed. The model has been applied for analysis and simulation of an InAs_0.89Sb_0.11 photovoltaic detector for operation at room temperature in 2–5 μm wavelength region. The model takes into account the effect of tunneling and other components of dark current on the detectivity of the device by considering all the three dominant recombination mechanisms e.g., radiative, Shockley-Read-Hall and Auger recombination. The study revealed that the dark current of the photodetector under reverse bias is dominated by trap-assisted tunneling component of current and this causes the detectivity of the device to decrease at high reverse bias. It is further concluded that by operating the device at a suitable low reverse bias it is possible to improve the room-temperature detectivity significantly as compared to its value at zero bias.     

Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength

Hg_1-xCd_xTe is an important material for infrared (IR) detection applications where the bandgap of the alloy varies from semimetal to 1.4 eV. The large variation in bandgap energy with HgCdTe composition causes difficulty in controlling detector-cutoff wavelength, particularly for the long-wavelength IR and very-long-wavelength infrared (VLWIR, greater than 12 μm) spectral bands. Our ability to control the HgCdTe composition and compositional profile during growth by molecular beam epitaxy (MBE) is improved significantly by using automated feedback control from spectroscopic ellipsometry (SE) measurements, where the standard deviation in the error in composition has improved by a factor of 5, from σ=0.0081 to σ=0.0016. To improve our ability to predict cutoff wavelength from IR transmission measurements, we have used a model of the absorption in HgCdTe to revise our past empirical cutoff relationship to include the effect of compositional grading. We have achieved a mean detector-cutoff wavelength of 14.1 μm and standard deviation of σ=0.25 μm for a series of 19 processed layers with a target cutoff of 14 μm. The excellent control in VLWIR detector cutoff we have observed is attributed to automated compositional control and an improved cutoff-prediction model.     

硅基HgCdTe光伏器件的暗电流特性分析

对硅基HgCdTe中波器件进行了变温电流电压特性的测试和分析。测量温度从30K到240K，得到R0对数与温度的1000／T的实验曲线及拟合结果。同时选取60K、80K及110K下动态阻抗R与电压V的曲线进行拟合分析。研究表明在我们器件工作的温度点80K，零偏压附近主要的电流机制是产生复合电流和陷阱辅助隧穿电流。要提高器件的水平，必须降低陷阱辅助隧穿电流和产生复合电流对暗电流的贡献。     

Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack

We investigated the temperature dependence of C–V and I–V characteristics in p-type Metal Oxide Semiconductor (MOS) capacitors with HfO₂/SiO₂ dielectric stacks. Dramatic degradation in the C–V characteristics at/over the measurement temperature of 125 °C was observed, which was caused by the increased effective oxide thickness, oxide trapped charge density, and interfacial density of state (D_it) with rising temperature during bias temperature stress. In the accumulation region, the leakage current density displayed strong temperature dependence in the ?3 V<Vg<0 V region, as expected for the direct tunneling compared to the trap-assisted component (DT+TAT) effect. The conduction mechanism was transformed into Fowler–Nordheim (FN) tunneling (weak T and Vg dependence) from DT+TAT (strong T and Vg dependence) at Vg <?3 V, which was confirmed by FN tunneling fitting. According to the conventional Shockley–Read–Hall model, the different levels in D_it were found at various measurement temperatures to interpret the strong temperature dependence and weak Vg dependence inversion current property.     

Mid-wavelength infrared p-on-n Hg1−xCdxTe heterostructure detectors: 30–120 kelvin state-of-the-Art performance

We report on Hg_1−xCd_xTe mid-wavelength infrared (MWIR) detectors grown by molecular-beam epitaxy (MBE) on CdZnTe substrates. Current-voltage (I-V) characteristics of HgCdTe-MWIR devices and temperature dependence of focal-plane array (FPA) dark current have been investigated and compared with the most recent InSb published data. These MWIR p-on-n Hg_1−xCd_xTe/CdZnTe heterostructure detectors give outstanding performance, and at 68 K, they are limited by diffusion currents. For temperatures lower than 68 K, in the near small-bias region, another current is dominant. This current has lower sensitivity to temperature and most likely is of tunneling origin. High-performance MWIR devices and arrays were fabricated with median R_oA values of 3.96 × 10¹⁰ Ω-cm² at 78 K and 1.27 × 10¹² Ω-cm² at 60 K; the quantum efficiency (QE) without an antireflection (AR) coating was 73% for a cutoff wavelength of 5.3 μm at 78 K. The QE measurement was performed with a narrow pass filter centered at 3.5 μm. Many large-format MWIR 1024 × 1024 FPAs were fabricated and tested as a function of temperature to confirm the ultra-low dark currents observed in individual devices. For these MWIR FPAs, dark current as low as 0.01 e⁻/pixel/sec at 58 K for 18 × 18 μm pixels was measured. The 1024 × 1024 array operability and AR-coated QE at 78 K were 99.48% and 88.3%, respectively. A comparison of these results with the state-of-the-art InSb-detector data suggests MWIR-HgCdTe devices have significantly higher performance in the 30–120 K temperature range. The InSb detectors are dominated by generation-recombination (G-R) currents in the 60–120 K temperature range because of a defect center in the energy gap, whereas MWIR-HgCdTe detectors do not exhibit G-R-type currents in this temperature range and are limited by diffusion currents.     

Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current

We present our latest results on cooled p-on-n planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current for raising the operating temperature (T _op), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size. Both are essential requirements to meet the market demands for reduced size, weight and power and high-operating temperature applications. Detectors based on the p-on-n technology developed at AIM now span the spectrum from the mid-wavelength infrared (MWIR) to the very long wavelength infrared (VLWIR) with cut-off wavelengths from 5 μm to about 13.5 μm at 80 K. The development of the p-on-n technology for VLWIR as well as for MWIR is mainly implemented in a planar photodetector design with a 20-μm pixel pitch. For the VLWIR, dark currents significantly reduced as compared to ‘Tennant’s Rule 07’ are demonstrated for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at a 20 K higher operating temperature than with previous AIM technology. For MWIR detectors with a 20-μm pitch, noise equivalent temperature differences of less than 30 mK are obtained up to 170 K. This technology has been transferred to our small pixel pitch high resolution (XGA) MWIR detector with 1024 × 768 pixels at a 10-μm pitch. Excellent performance at an operating temperature of 160 K is demonstrated.     

Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes

Measurements of 77K R_oA and 300K reverse bias dynamic impedance (R_dA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg_1-xCd_xTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents at small and modest reverse bias. We have observed that R_oA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature R_dA values. Diode arrays with high room temperature R_dA values at one volt reverse bias also have high R_oA values at 77K. Similarly, low R_dA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature measurements of current-voltage characteristics to evaluate Hg_1-xCd_xTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria for further study at lower temperatures.     

Investigation of 1/<Emphasis Type="Italic">f</Emphasis> Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes

In this work, gated midwave infrared (MWIR) Hg_1–x Cd _x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 × 10¹⁶ cm⁻³ and x = 0.31. CdTe was thermally deposited and used as both a passivant and a mask for the plasma-based type conversion, and ZnS was used as an insulator. Fabricated devices show a R ₀ A of 1–5 × 10⁴ Ωcm² with zero gate bias. Application of 2 V to the gate improves the R ₀ A by more than two orders of magnitude to 6.0 × 10⁶ Ωcm², which corresponds to the p-type surface being at transition between depletion and weak inversion. Trap-assisted tunneling (TAT) current was observed at negative gate biases and reverse junction biases. For gate biases greater than 3 V, a field-induced junction breakdown was observed. An I _n = α I ^β f ^−0.5 trend was observed above 200 pA reverse bias dark current, with α = 3.5 × 10⁻⁵ and β = 0.82, which corresponds to the TAT dominated region. Below 200 pA, junction generation-recombination (GR) current starts to dominate and this previously mentioned trend is no longer observed. Junction GR current was not seen to be correlated with 1/f noise in these photodiodes.     

Improvement in HgCdTe diode characteristics by low temperature post-implantation annealing

Hg_1−xCd_xTe diodes (x∼0.22) with different carrier concentrations in p type materials have been fabricated by employing an ion-implantation technique. The performances of the diodes, prior to and after low temperature postimplantation annealing, have been investigated in detail by model fitting, taking into account dark current mechanisms. Prior to the annealing process, dark currents for diodes with relatively low carrier concentrations are found to be limited by generation-recombination current and trap-assisted tunneling current, while dark currents for diodes with higher carrier concentrations are limited by band-to-band tunneling current. These dark currents in both diodes have been dramatically decreased by the low temperature annealing at 120∼150°C. From the model fitting analyses, it turned out that trap density and the density of the surface recombination center in the vicinity of the pn junction were reduced by one order of magnitude for a diode with lower carrier concentration and that the carrier concentration profile in a pn junction changed for a diode with higher carrier concentration. The improvements are explained by changes in both carrier concentration profile and pn junction position determined by interaction of interstitial Hg with Hg vacancy in the vicinity of the junction during the annealing process.     

Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes

We evaluated the performance of long-wavelength infrared (LWIR, λ _c = 9.0 μm at 80 K) mercury cadmium telluride electron-injected avalanche photodiodes (e-APDs) in terms of gain, excess noise factor, and dark current, and also spectral and spatial response at zero bias. We found an exponential gain curve up to 23 at 100 K and a low excess noise factor close to unity (F = 1–1.25). These properties are indicative of a single carrier multiplication process, which is electron impact ionization. The dark current is prevailed by a diffusion current at low reverse bias. However, tunneling currents at higher reverse bias limited the usable gain. The measurements of the pixel spatial response showed that the collection width, and, especially, the amplitude of the response peak, increased with temperature. Furthermore, we developed a Monte Carlo model to understand the multiplication process in HgCdTe APDs. The first simulation results corroborated experimental measurements of gain and excess noise factor in mid-wavelength infrared (MWIR, x = 0.3) and LWIR (x = 0.235) e-APDs at 80 K. This model makes it possible for phenomenological studies to be performed to identify the main physical effects and technological parameters that influence the gain and excess noise. The study of the effect of the n ⁻-layer thickness on APD performance demonstrated the existence of an optimum value in terms of gain.     

Analysis of Current–Voltage Measurements on Long-Wavelength HgCdTe Photodiodes Fabricated on Si Composite Substrates

We have performed a detailed study of dark current versus voltage to understand existing limitations in dark current and address the nonuniformity of dark current in devices fabricated on HgCdTe grown on silicon substrates. One interesting observation is that trap-assisted tunneling, g-r currents, are not found close to zero bias in certain devices. Devices from the low end of the R ₀ A distribution show heavy shunting paths close to zero bias. We believe that these shunting paths may be the limiting cause of tail distributions in fabricated focal plane array tail distributions. Possible causes for these shunting paths are surface charges associated with dislocation cores and impurity gettering at dislocation cores. The measured non-anti-reflection (AR)-coated quantum efficiency (QE) was 0.576 at 78 K and displays the classical response versus wavelength. The measured QE on isolated single devices is consistent with the 256 × 256 focal-plane array mean QE. Obtained average dark currents are on the order of mid 10⁻⁵ A cm^–2, which is one order of magnitude higher than dark currents obtained from arrays on lattice-matched substrates. On average, arrays on lattice-mismatched substrates show performance characteristics inferior to those of arrays fabricated on lattice-matched substrates. This inferior performance is due to array pixel operability, as can be seen from the tail of the distribution and the average dark currents, which are one order of magnitude higher than those obtained on lattice-matched substrates.     

Realization of very long wavelength infrared photovoltaic detector arrays on mercury cadmium telluride epitaxial layers grown on Si substrates

This paper proposes a development of n-on-p structures for realizing very long wavelength infrared (VLWIR) detector arrays on mercury cadmium telluride (HgCdTe) epitaxial layers grown on Si substrates. It is shown from a comparative study of zero-bias resistance-area product (R₀A) of diodes in n-on-p and p-on-n configurations that the n-on-p structure has promising potential to control contribution of dislocations, without actually reducing dislocation density below the current level (mid-10⁶ cm⁻²) of HgCdTe/Si material technology. The resulting gain will be in terms of both higher numerical magnitudes of R₀A and its reduced scatter.