基于Zigbee技术的智能家居系统

针对目前智能家居系统布线难、成本高、可扩展性差等问题,提出了一种基于Zigbee技术的智能家居系统的设计方案。分析了现代智能家居的特点,重点剖析了Zigbee技术及其协议,并详细阐述了该系统的组成、主控制器以及分控制器设计。实验结果表明,该系统功耗小,可靠性高,是一种理想的智能家居实现方式。     

智能家居控制器电源解决方案

智能家居是以住宅为平台,利用综合布线技术、网络通信技术、智能家居-系统设计方案安全防范技术、自动控制技术、音视频技术将家居生活有关的设施集成。其中供电系统是这一切智能设备的心脏,是各个控制系统正常运行的保障。以下,为你盘点智能家居各种类型的智能家居电源解决方案。随着人们生活水平的提高,对住房的安全性能、智能化、舒适化、美观化、娱乐化提出了新的需求,智能家居的出现正好满足人们的这些要求。     

一种基于STM32的智能家居系统设计

文章依据智能家居发展现状,提出了一种基于STM32系列芯片的智能家居系统设计方案。本方案以智能家居控制器为核心,包含了多种智能家居产品,集本地控制、RS485控制和以太网通信三种控制方式,适合家庭使用以及相关教学实验开发。     

基于Cortex-M3与A nd roid的智能家居控制系统设计

本文提出了一种基于Cortex-M3和Android的智能家居控制系统解决方案。方案采用Contex-M3为内核的ARM处理器,通过移植μC/OS-II操作系统和LwIP协议栈搭建智能家居嵌入式服务器。系统采用智能手机作为控制终端,设计基于Android的客户端应用程序。智能家居内部网络采用ZigBee无线传感网络技术进行搭建,最终实现通过手机对家居内部设备进行远程实时监控的目的。实验表明,该系统成本低廉,运行稳定,用户界面良好,能够满足一些家居对智能化的需求。     

双向连接的智能家居控制系统研究与设计

智能家居已经在人们的生活中扮演着重要的角色,尤其在办公、展览等公共场所。当前市场已经有许多智能家居的解决方案付诸使用,但不同的解决方案实际效果参差不齐,各有所长。针对市面上智能家居产品普遍不能获取设备状态以及控制方式单一等缺点,提出了一种新的解决方案。该方案采用ADK实现,配合Android设备,可以实时获取家居设备状态,并能方便的通过多种方式控制。     

基于ARM平台的智能家居网关设计

介绍智能家居网络各种传输介质的优缺点,设计一种基于电力线传输的简化分时发送协议。在此协议基础上,提出一种基于ARM平台的智能家居网关设计方案。根据系统设计的要求,进行无线Wi Fi、电力传输、以太网等模块的电路设计和相应的网关软件流程设计。最后,通过系统调试证明该系统电路简单、设计合理且实用性强。     

基于LD3320语音识别的智能家居控制系统设计

提出了一种基于LD3320语音识别的智能家居控制系统设计方案.该系统通过ASR语音识别与Zigbee通信组网技术的运用,用语音来实现对家居照明的亮、灭与亮度调节控制,智能开关的控制,音响的控制,也可扩展用手机APP进行远程的控制,真正实现了智能家居倡导的无感化设计.     

基于无线控制的智能家居系统设计

该系统是一种基于无线控制的物联网智能家居设计控制系统。通过无线网络改善了系统的可扩展性,提出基于nrf24l01实现智能家居系统网络解决方案。文章详细介绍了智能家居系统的通信协议以及框架结构,能够有效地实现物理感知并且降低智能家居系统的网络接入成本。     

基于ARM的智能家居远程监控系统设计

针对传统智能家居系统不足之处,提出了基于ARM的智能家居远程监控系统设计方案,并对该方案进行了具体设计.该系统由智能家居终端、智能家居控制中心、客户端三部分组成,智能家居控制中心与终端之间是基于蓝牙无线连接方式,与客户端之间是基于GPRS和Internet连接方式.本系统基于B/S结构,具有软硬件资源丰富,成本低,功耗小,便于扩展,升级及维护等优点,具有一定实用价值.     

基于IEEE 802.15.4e的智能家居家电控制系统的实现

根据智能家居智能化、网络化、模块化的发展需求,提出了一种智能家居家电控制系统的设计方案,对家电控制系统硬、软件设计进行了详细说明。分别设计基于Android操作系统的智能手机、PDA的家电控制软件和基于J2EE架构设计的智能家居网站。采用IEEE 802.15.4e协议组网,通过接入智能家居环境监测、安防报警等子系统实现情景模式控制,提供全方位的信息交换服务,优化人们的生活方式。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.