基于混沌粒子群算法的宽零陷方向图综合方法

自适应阵列天线常需要采用宽零陷技术,以增强阵列天线抗干扰的稳健性。为此,提出了一种基于混沌粒子群算法（CPSO）的阵列天线宽零陷方向图综合方法。该算法首先采用混沌序列初始化粒子位置,以增强搜索多样性,并在对部分非优胜粒子的位置更新时引入混沌扰动项,在每次迭代中对全局最优位置进行变尺度混沌优化,提高了全局和局部搜索能力,加快了收敛速度。仿真结果验证了混沌粒子群算法在阵列天线宽零陷方向图综合时的收敛速度和精度方面均优于标准粒子群算法。     

智能天线中基于粒子群算法的二维DOA估计

简要介绍了智能天线应用于无线通信系统中的特点、优势以及智能天线的一些相关基础知识,并建立了均匀圆阵下的信号模型。较为详细地分析了智能天线中关于二维DOA估计的MUSIC算法。为了有效解决MUSIC算法巨大计算量的问题,引入了优化计算领域的研究热点一粒子群算法对其进行改进,进行了算法仿真。仿真结果表明,通过运用群智能搜索,基于粒子群算法的二维DOA估计能有效降低MUSIC算法的计算量,同时具备较好的估计精度。     

基于改进型粒子群算法在雷达波束展宽中的应用

惯性权重是粒子群算法中的关键参数,可以权衡粒子群算法的全局搜索能力及局部搜索能力之间的关系,同时也可以提高算法的收敛性能。针对粒子群算法在处理高维复杂问题时极易陷入局部最优的不足,提出了一种基于适应度累计的周期惯性权重的改进型粒子群优化算法,并通过该算法实现了相控阵雷达天线的波束展宽。     

基于粒子群融合遗传算法的阵列天线方向图综合

<正>基本粒子群算法应用于阵列天线波束赋形时，优化算法容易陷入局部收敛，无法准确获得所需方向图，针对这一问题提出了一种粒子群融合遗传算法的改进优化算法。该算法在基本粒子群算法的基础上，引入了遗传算法中的交叉、变异机制，并结合精英粒子选择策略，增加了粒子种群的多样性，增强了算法的全局寻优能力，有效地提高了算法全局搜索的效率。仿真结果表明，将该方法应用于阵列天线波束赋形时能够得到预期的目标方向图，算法的优化效率高、优化效果好，具有较强的稳健性。     

基于改进PSO的非对称BoucWen模型参数辨识

为了辨识压电陶瓷中的迟滞非线性,该文提出一种改进的粒子群算法(PSO)对非对称BoucWen模型进行参数优化。首先在归一化BoucWen模型中引入非对称因子描述非对称特性,解决该模型只适用于描述对称迟滞的问题。其次通过引入混沌映射、收缩因子和动态学习因子来对传统PSO进行改进,动态改变粒子群的权重和学习因子,有效地提高算法的搜索能力和收敛速度。最后通过改进的PSO对非对称BoucWen模型进行参数辨识。结果表明,改进的粒子群算法能较好地辨识BoucWen模型参数,验证了方法的有效性。     

基于分类思想的改进粒子群优化算法

针对粒子群算法存在收敛速度慢、收敛精度低且易收敛到局部极值的问题,提出一种基于分类思想的粒子群改进算法。该算法将粒子适度值和适度值均值做差与适度值标准差进行比较,从而将粒子所在区域划分为拒绝域、亲近域、合理域。根据不同区域中粒子的特点选取不同惯性权重和学习因子,使粒子高效地选择自身经验或种群经验,合理增强或减弱粒子全局搜索能力和局部搜索能力。数值实验结果表明,与其他粒子群改进算法相比,新的分类粒子群算法有效加快了粒子的收敛速度,提高了算法的收敛精度,有效改善了算法寻优性能。     

基于粒子群优化的反潜搜索研究

在分析目前反潜搜索现状的前提下,提出了使用粒子群优化算法进行反潜搜索,并针对基本粒子群优化算法存在早熟和后期收敛速度慢的局限性,对个体极值实行高斯变异,并使惯性因子随进化代数自适应调节,提高了全局搜索能力和后期收敛速度,改进了粒子群优化算法的潜艇搜索策略.经过实验验证,本算法可以有效地提高反潜搜索效率.     

改进元胞粒子群算法求解JSP问题

为求解离散JSP(作业车间调度)问题,设计了基于四方形网格的元胞粒子群算法。引入变异策略增强了算法跳出局部最优的能力,对每代粒子群引入变邻域搜索提高了算法的局部搜索能力。数值实验表明,改进的元胞粒子群优化算法具有好的收敛性与求解精度。     

基于ELM和MA的微型四频天线设计

提出一个基于极限学习机ELM（Extreme Learning Machine）和文化基因算法MA（Memetic Algorithm）的微型四频（0.92/2.4/3.5/5.8GHz）天线设计算法AntMA-ELM.为了提高天线的性能,算法在MA框架下引入基于综合学习粒子群优化算法CLPSO（Comprehensive Learning Particle Swarm Optimizer）全局搜索和DSCG（Davies,Swann,and Campey with Gram-schmidt）局部搜索,用于确定天线的几何参数.同时,建立ELM回归模型用于直接评估MA优化的适应值函数.实验结果表明,ELM回归模型能够根据输入参数正确估算天线的回波损耗,使MA算法有效提高设计性能和加速优化过程.天线在四个目标频段的回波损耗值均优于-10dB,满足设计要求.     

幅值比约束下稀布阵的旁瓣抑制混合算法

针对非均匀稀布圆环阵的旁瓣抑制问题提出了一种基于粒子群算法和二阶锥规划算法的混合算法。该混合算法结合两种算法的优势,将粒子群算法作为全局搜索器进行阵元位置的优化,二阶锥规划算法作为局部搜索器进行阵元权值的优化,能够获取较低的峰值旁瓣电平。该算法同时引入相邻阵元最小间距的约束,优化了算法的搜索空间,提高了寻优效率。最后,考虑到阵列天线系统的可实现性,给出了动态幅值比约束下的混合算法。与粒子群算法和参考文献方法的对比实验结果表明:本文算法可进一步降低稀布圆环阵的旁瓣电平,仿真数据验证了算法的有效性和天线系统的可实现性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.