基于MCU笔记本散热底座智能温控系统设计与研究

为了确保笔记本设备散热底座达到智能优化控制的技术水准,根据设计活动中红外温度传感器的应用经验,配合单片机作为核心支撑结构,使用温度监控程序当做显示平台,专门设计出某种笔记本散热底座智能优化管理系统,这类措施令设备底座发热问题得到有效改善,同时完成向自动鉴别和调速的过渡工作。按照实际测试结论阐述,这类系统能够全面、稳定地挖掘笔记本散热需求,进而克制底座低噪音的蔓延状态,满足低能耗的运转效果,维持应用过程中的经济性价值,促进设备长期使用寿命得到延长发挥。     

FLEX笔记本风扇散热底座

这款超大风扇的散热底座与传统笔记本散热底座的最大不同在于配备了一个直径达22厘米的超大散热风扇，无论你的本本发热点位于何处，都可以轻松应对。虽然个头很大，不过噪音并不会太大，约为18～20分贝。该产品尺寸为300×270×25mm，重约750克，转速为600rpm。该底座支持15度与32度两种高度调节，可以更好地适应不同的坐姿。     

基于单片机的智能温控散热器设计

为了克服底座风扇式散热器一旦开启便一直匀速运行,而无法自动调节转速的缺点,设计一款智能温控散热器。该散热器由温度采集、电机驱动、显示等模块组成。系统根据实时采集到的温度,通过控制器自带的脉宽调制(PWM)寄存器,使得风扇的速度跟随被控电机的速度而发生改变,从而达到智能温控散热的目的。     

体验夏日里的清凉 华硕K40AB笔记本电脑

酷夏来临,使用笔记本的用户难免会体验到电脑高温的考验,为此很多朋友都会为自己的爱机选择一款散热底座来降温,不过这样移动起来会变得很不便。鉴于此,许多笔记本厂商都在机身散热以及功耗控制上面投入研发,近期华硕推出的一款采用全新“IceCool设计”的新机K40AB就较好的解决了以上这一问题,特别是其腕托可以持续保持低于人体温度25％的水平,让你在炎炎夏日里可以尽享凉爽的舒适。     

多颗粒LED封装警示灯热特性数值与实验研究

针对一款新型LED旋转警示车灯,选取了三个不同的关键参数(灯柱半径r,散热底座半径R及散热底座高度H),基于有限元理论及热电偶测量法,研究了多颗粒LED封装灯具结构的热特性。结果表明:最高温度点处于LED颗粒的中心处,最高温度可达67.31℃(仿真时),64.95℃(实验时)。散热底座半径对结构的最高温度影响最大。可以通过散热底座的设计来提高LED颗粒的热可靠性及车灯的使用寿命;亦为LED灯具结构设计提供了设计基础。     

一种物联网开关电路设计

文章基于阿里云生活物联网平台,以ESP8285 WiFi模组为控制核心,设计了一款可进行二次开发的WiFi远程控制智能开关电路,实时监测插座供电情况,可直接替换传统插座,安装在标准的86盒底座上。文章从软硬件两个方面介绍了智能开关的设计方案及程序设计的主要思想。     

微波功率放大器印制基板散热工艺解决方案

功放印制基板与散热底座或壳体间必须具有良好的接地和散热效果。探讨了为了满足功放功率输出特性好和效率高的设计性能要求,在制造环节应采取的有效工艺控制措施。并对4种功放印制基板和散热底座材料选择以及功放印制基板和散热底座连接回流焊接技术等进行了介绍。经过工艺试验、电性能测试以及环境试验,验证了工艺方案的正确性。     

你的电脑发热么？——CCTV走近科学节目利用Fluke Ti25对笔记本进行检测

在购买笔记本时,除了配置之外,更加让人费心的就是笔记本的散热问题。众所周知,笔记本电脑的某一部位温度太高将严重影响使用寿命,笔记本的散热强度和均匀程度反映了笔记本厂家的设计水平。CCTV走近科学节目中利用FlukeTi25热象仪对四台顶级笔记本电脑在性能、设计质量和环保3方面做出了综合评估。     

区域电力通信网光缆智能分配监测系统的设计与实现

以区域电力通信网光缆线路为研究对象,对其智能分配监测系统的设计和实现进行了研究。根据光缆智能分配监测系统工作原理,设计了光缆智能分配监测系统结构和相关系统功能模块及软件系统,其中软件操作系统为Windows 2012 Server,选择SQL Server 2012进行数据库开发,并配合操作系统实行无缝连接,采用VB进行前台开发,在光缆智能分配监测中心选择IBM服务器进行相关工作,使用Mapinfo Professional 12.0作为地理信息系统开发平台,开发工具使用MAP X5.0来实现,系统通过GIS功能模块实现光缆线路系统智能分配的实时监测、智能切换光、告警、预警,为今后区域电力通信网光缆智能分配监测系统的研究提供了参考。     

工业污水排放远程自动监测系统设计

为了实现远程实时监测工业污水的排放，研究设计出一种通过电话网络传输DTMF信号进行远程控制的智能监测系统。该系统是以单片机AT89C51和DTMF解码电路MT8870为核心元件。给出了主要硬件电路设计，验证了系统的可行性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.